2SK3113B DS - Renesas Electronics

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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating : ±30 V
• Avalanche capability ratings
<R>
ORDERING INFORMATION
PART NUMBER
2SK3113B-S15-AY
LEAD PLATING
Note
Note
2SK3113B(1)-S27-AY
2SK3113B-ZK-E1-AY
2SK3113B-ZK-E2-AY
PACKING
PACKAGE
Tube 70 p/tube
TO-251 (MP-3-a) typ. 0.39 g
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Pure Sn (Tin)
Note
Note
Note Pb-free (This product does not contain Pb in external electrode.)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±2.0
A
ID(pulse)
±8.0
A
PT1
20
W
PT2
1.0
W
Tch
150
°C
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Note2
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
IAS
2.0
A
Single Avalanche Energy
Note3
EAS
2.7
mJ
(TO-252)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
2SK3113B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
| yfs |
VDS = 10 V, ID = 1.0 A
0.5
RDS(on)
VGS = 10 V, ID = 1.0 A
3.2
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
0.9
S
Ω
4.4
Input Capacitance
Ciss
VDS = 10 V
290
pF
Output Capacitance
Coss
VGS = 0 V
75
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
7
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 1.0 A
10.5
ns
tr
VGS = 10 V
4.8
ns
td(off)
RG = 10 Ω
15.8
ns
tf
RL = 10 Ω
10.5
ns
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
QG
VDD = 450 V
7.9
nC
Gate to Source Charge
QGS
VGS = 10 V
2.7
nC
QGD
ID = 2.0 A
3.2
nC
VF(S-D)
IF = 2.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 2.0 A, VGS = 0 V
190
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/μs
500
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG.
50 Ω
VDD
VGS = 20 → 0 V
RG
PG.
VGS
VGS
Wave Form
0
90%
ID
VGS
0
ID
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
2
IG = 2 mA
RL
50 Ω
VDD
10%
0 10%
Wave Form
τ
VDD
PG.
90%
BVDSS
VDS
ID
90%
VDD
ID
IAS
VGS
10%
Data Sheet D18061EJ3V0DS
td(on)
tr
ton
td(off)
tf
toff
2SK3113B
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
80
60
40
20
35
30
25
20
15
10
5
0
0
0
20
40 60
80 100 120 140 160
Tch - Channel Temperature - °C
0
20
40
60
80 100 120 140 160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
PW = 10 μs
Tc = 25°C, Single pulse
100 μs
10
ID(DC)
1 ms
1
10 ms
RDS(on) Limited
(at VGS = 10 V)
0.1
Power Dissipation Limited
0.01
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse)
Rth(ch-A) = 125°C/W
100
Rth(ch-C) = 6.25°C/W
10
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width – s
Data Sheet D18061EJ3V0DS
3
2SK3113B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
5
Pulsed
VGS = 10 V
4
ID - Drain Current - A
ID - Drain Current - A
4.5
3.5
3
8V
2.5
2
1.5
10
1
Tch = 125°C
75°C
0.1
25°C
1
0.5
0.01
0
5
10
15
20
VGS(off) - Gate Cut-off Voltage - V
20
25
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.5
3
2.5
2
1.5
VDS = 10 V
ID = 1 mA
0
-50
0
50
100
VDS = 10 V
Pulsed
25°C
125°C
0.1
75°C
0.01
0.01
150
7.0
6.0
5.0
ID = 2.0 A
3.0
1.0 A
2.0
15
1
10
20
25
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - Ω
Pulsed
10
0.1
ID - Drain Current - A
8.0
5
Tch = − 25°C
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4.0
30
10
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - Ω
15
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
0
10
VGS - Gate to Source Voltage - V
5
1
5
VDS - Drain to Source Voltage - V
4.5
0.5
0
25
| yfs | - Forward Transfer Admittance - S
0
6.0
5.5
5.0
4.5
4.0
3.5
VGS = 10 V
3.0
20 V
2.5
Pulsed
2.0
0.01
0.1
1
ID - Drain Current - A
VGS – Gate to Source Voltage - V
4
VDS = 10 V
Pulsed
−25°C
Data Sheet D18061EJ3V0DS
10
2SK3113B
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
100
8
IF – Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
ID = 2.0 A
6
1.0 A
4
2
VGS = 10 V
Pulsed
0
-50
0
50
100
10
1
V GS = 10 V
0.1
0V
Pulsed
0.01
0.0
150
Tch - Channel Temperature - °C
1.0
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
C iss
100
VDD = 150 V
VGS = 10 V
RG = 10 Ω
td(on), tr, td(off), tf - Switching Time - ns
1000
Ciss, Coss, Crss - Capacitance - pF
0.5
C oss
10
C rss
VGS = 0 V
f = 1 MHz
1
100
tf
td(off)
10
td(on)
tr
1
0.1
1
10
100
0.1
1
10
VDS - Drain to Source Voltage – V
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
600
VDS – Drain to Source Voltage - V
trr – Reverse Recovery Time - ns
di/dt = 50 A/μs
VGS = 0 V
100
10
VDD = 450 V
300 V
150 V
500
9
8
VGS
400
7
6
300
5
4
200
VDS
3
2
100
10
1
ID = 2.0 A
0
0.1
1
10
ID - Drain Current - A
0
0
2
4
6
8
10
QG – Gate Chage - nC
Data Sheet D18061EJ3V0DS
5
VGS – Gate to Source Voltage - V
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
2SK3113B
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
10
IAS = 2.0 A
1.0
RG = 25 Ω
VDD = 150 V
VGS = 20 → 0 V
Starting Tch = 25˚C
0.1
10 μ
6
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
EAS = 2.7 mJ
100 μ
1m
L - Inductive Load - H
100
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 2.0 A
80
60
40
20
10 m
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
Data Sheet D18061EJ3V0DS
2SK3113B
<R> PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
2) TO-251 (MP-3-b)
1.06 TYP.
2.3 ±0.1
0.5 ±0.1
6.6±0.2
4
0.5±0.1
3
1.14 MAX.
11.25 TYP.
2
0.76±0.12
1.04 TYP.
2.3 TYP.
2.3 TYP.
1.02 TYP.
2.3 TYP.
0.5±0.1
2.3 TYP.
0.5 ±0.1
0.76 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
Body
Diode
No Plating
Gate
0.51 MIN.
0.8
1.14 MAX.
3
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
2
Gate
Protection
Diode
Source
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
3) TO-252 (MP-3ZK)
1
4.13 TYP.
1.14 MAX.
1
No Plating
9.3 TYP.
3
16.1 TYP.
2
1.8 ±0.2
1
6.1±0.2
6.1 ±0.2
4.0 MIN.
5.3 TYP.
2.3±0.1
4
1.1±0.13
Mold Area
0.7 TYP.
6.6 ±0.2
5.3 TYP.
4.3 MIN.
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D18061EJ3V0DS
7
2SK3113B
• The information in this document is current as of June, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1