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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4558 HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4558 is a dual type operational amplifier having internal phase compensating circuits, its electrical characteristics features higher speed, broader bandwidth, and lower noise compared with such conventional general purpose operational amplifier as µPC741. Therefore, application to active filters, audio amplifiers, VCO, etc. can be realized with simple circuit composition. FEATURES • Internal frequency compensation • Low noise • Output short circuit protection ORDERING INFORMATION Part Number Package µPC4558C 8-pin plastic DIP (7.62 mm (300)) µPC4558G2 8-pin plastic SOP (5.72 mm (225)) µPC4558G2(5) 8-pin plastic SOP (5.72 mm (225)) PIN CONFIGURATION (Top View) EQUIVALENT CIRCUIT (1/2 Circuit) V + µ PC4558C, 4558G2 R1 Q7 Q5 OUT1 Q13 1 8 V + 1 – + Q11 − Q1 II IN II1 Q15 Q8 Q9 R7 R5 C2 Q12 7 OUT2 2 + – R6 Q2 + 2 IN1 3 6 II2 V– 4 5 IN2 R8 Q14 Q6 Q3 Q4 OUT Q10 D R2 C1 R3 R4 R9 V– The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G10518EJAV0DS00 (10th edition) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. 1987 µPC4558 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter + Voltage between V and V Symbol – Note 1 + V -V Differential Input Voltage Input Voltage VID Note 2 Output Voltage – VI Note 3 Power Dissipation C Package Note 4 G2 Package Output Short Circuit Duration Ratings Unit –0.3 to +36 V ±30 V – + V – + V –0.3 to V +0.3 VO V –0.3 to V +0.3 V PT 350 mW 440 mW Indefinite sec Note 5 Note 6 Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55°C. 5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage 2 Symbol V ± MIN. ±4 Data Sheet G10518EJAV0DS TYP. MAX. Unit ±16 V µPC4558 µPC4558C, µPC4558G2 ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol Note Note Conditions MIN. TYP. MAX. Unit ±0.5 ±6.0 mV IIO ±5 ±200 nA IB 60 500 nA 170 mW RS ≤ 10 Ω VIO Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V Power Consumption Pd IO = 0 A Common Mode Rejection Ratio CMR RS ≤ 10 kΩ Source Variation Rejection Ratio SVR RS ≤ 10 kΩ Output Voltage Swing Vom 20,000 100,000 90 70 90 RL ≥ 10 kΩ ±12 ±14 V RL ≥ 2 kΩ ±10 ±13 V ±12 ±14 V 1.0 V/µs 6 µVp-p 105 dB Common Mode Input Voltage Range VICM Slew Rate SR AV = 1 Input Equivalent Noise Voltage Vn RS = 1 kΩ, f = 1 Hz to 1 kHz 30 dB 150 µV/V (Figure1) Channel Separation f = 1 kHz (Figure2) Note Input bias currents flow out from IC, because each currents are base current of PNP-transistor on input stage. When using these ICs, pay careful attention to the following points. 1. The total of the internal power dissipation, when the loads of both channels are short-circuited at the same time. 2. The likelihood of interference between the channels, due to the temperature gradient of the chip, when the internal power dissipation of the left and right channels differ greatly in circuits handling low level inputs. µPC4558G2 (5) ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol TYP. MAX. Unit ±0.5 ±2.0 mV IIO ±5 ±50 nA IB 60 100 nA 135 mW VIO Note Note Conditions MIN. RS ≤ 10 Ω RL ≥ 2 kΩ , VO = ±10 V Large Signal Voltage Gain AV Power Consumption Pd IO = 0 A Common Mode Rejection Ratio CMR RS ≤ 10 kΩ Source Variation Rejection Ratio SVR RS ≤ 10 kΩ Output Voltage Swing Vom RL ≥ 10 kΩ ±12.5 ±14 V RL ≥ 2 kΩ ±11 ±13 V ±13 ±14 V Common Mode Input Voltage Range VICM Slew Rate SR AV = 1 Input Equivalent Noise Voltage Vn RS = 1 kΩ, f = 1 Hz to 1 kHz 50,000 100,000 90 85 90 30 dB 75 µV/V 1.0 V/µs 6 µVp-p 105 dB (Figure1) Channel Separation f = 1 kHz (Figure2) Note Input bias currents flow out from IC, because each currents are base current of PNP-transistor on input stage. When using these ICs, pay careful attention to the following points. 1. The total of the internal power dissipation, when the loads of both channels are short-circuited at the same time. 2. The likelihood of interference between the channels, due to the temperature gradient of the chip, when the internal power dissipation of the left and right channels differ greatly in circuits handling low level inputs. Data Sheet G10518EJAV0DS 3 µPC4558 MEASUREMENT CIRCUIT Figure1 Noise Measurement Circuit +15 V 100 kΩ 1 kΩ − VO + 50 Ω Vn = 1 kΩ VO 2000 −15 V Figure2 Channel Separation Measurement Circuit 50 kΩ − 50 Ω VO2 + 10 kΩ 10 kΩ Channel separation VO2 1 = 20 log ( 1000 ) VO1 − VO1 + 4 Data Sheet G10518EJAV0DS µPC4558 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 500 µ PC4558G2 200˚C/W 400 300 Av - Open Loop Voltage Gain dB PT - Total Power Dissipation -mW 600 µPC4558C 200 227˚C/W 100 0 20 40 60 80 120 +15 V V +_ = _ 100 80 60 40 20 0 100 1 100 10 TA - Operating Ambient Temperature - ˚C f- Frequency - Hz LARGE SIGNAL FREQUENCY RESPONSE +15 V V +_ = _ 32 28 24 20 16 12 8 4 0 100 1k 10 k 100 k L OUTOUT VOLTAGE SWING 30 Vom - Output Voltage Swing - Vp-p Vom - Output Voltage Swing - Vp-p 36 +15 V V +_ = _ 25 20 15 10 5 100 1M 1k INPUT BIAS CURRENT INPUT OFFSET VOLTAGE 3 120 VIO - Input Offset Voltage - mV +15 V V +_ = _ 100 80 60 40 20 0 −20 0 20 40 10 k RL - Load Resistance - Ω f - Frequency - Hz IB - Input Bias Current - nA 1 k 10 k 100 k 1 M 10 M 60 80 +15 V V +_ = _ each 5 samples data 2 1 0 −1 −2 −3 −20 TA - Operating Ambient Temperature - ˚C Data Sheet G10518EJAV0DS 0 20 40 60 80 TA - Operating Ambient Temperature - ˚C 5 µPC4558 COMMON MODE INPUT VOLTAGE RANGE SUPPLY CURRENT 20 3 2 1 0 10 0 −10 −20 0 _+20 _+10 0 Voltage Range -V VICM - Common Mode Input ICC - Supply Current - mA 4 V + - Supply Voltage - V V+ - Supply Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE INPUT EQUIVALENT NOISE VOLTAGE DENSITY _ 10 1000 +15 V V =_ en -Input Equivalent Noise Voltage Density - nV/ Hz VO - Output Voltage - V + _ 5 0 −5 −10 0 10 20 30 300 100 30 10 40 1 t - Time -µ s 6 + _ 20 + _10 10 100 f - Frequency - Hz Data Sheet G10518EJAV0DS 1k µPC4558 APPLICATION CIRCUIT TYPICAL CHARACTERISTIC Distortion 0.03% (VO = 1Vr.m.s., f = 1 kHz) RIAA PREAMP (AV = 32.5 dB) + 100µF − TOTAL HARMONIC DISTORTION − − 56 kΩ 1 kΩ −15 V + 10 kΩ 100 µF kH z 0.1 hi gh -p as s fil te rO N 0.01 z 47 µF − 1 kH + kH z 2.2 kΩ 1 + Input 1.0 Output − 33 µ F + THD - Total Harmonic Distortion - % µ PC4558 33 µF kH z 390 kΩ 20 36 kΩ Noise 1.0 µ Vr.m.s. (Input Equiv., Input Short Peak DEt., Average Indication) +15 V 10 0.0022 µ F 0.01 µ F 20 Hz 0.001 0.01 0.1 1.0 1 VO - Output Voltage - Vr.m.s. PEAK LEVEL METER This circuit converts the peak voltage (about ± 10 mV to ±10 V) of the input signal to a DC voltage (about 0.2 V to 1.3 V) and drives the meter. Since the output voltage is proportional to the logarithmic value of the peak voltage of the input signal, indication of a much wider dynamic range can be obtained compared to conventional linear indicating methods. 1S953 30 kΩ 15 kΩ 1S953 +15 V 1S953 − -40 dB to +5 dB 1/2 (0 dB = 1 Vp-p) µ PC4558 + 30 kΩ − 1/2 µ PC4558 − 1/4 µ PC324 + + 30 kΩ −15 V 100 kΩ 20 kΩ +15 V 1S953 51 kΩ +15 V 30 kΩ 1S953 x2 30 kΩ − 1/4 µ PC324 + + −15 V 200 kΩ Log-Compression 2SK163 Full-wave Rectification Data Sheet G10518EJAV0DS 10 kΩ 30 kΩ 100 kΩ 20 kΩ –15 V 2 kΩ 0.22 µ F 3.3µ F Peak Hold Meter Amp. 7 µPC4558 PACKAGE DRAWINGS (Unit : mm) 8-PIN PLASTIC DIP (7.62mm(300)) 8 5 1 4 A K J L P I C H G B M R F D N M NOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS A B 10.16 MAX. 1.27 MAX. C 2.54 (T.P.) D 0.50±0.10 F 1.4 MIN. G H 3.2±0.3 0.51 MIN. I J 4.31 MAX. 5.08 MAX. K 7.62 (T.P.) L 6.4 M 0.25 +0.10 −0.05 N 0.25 P 0.9 MIN. R 0∼15° P8C-100-300B,C-2 8 Data Sheet G10518EJAV0DS µPC4558 8-PIN PLASTIC SOP (5.72 mm (225)) 8 5 detail of lead end P 4 1 A H F I G J S B C D M L N K S M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1±0.1 F 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 −0.07 L 0.6±0.2 M 0.12 N 0.10 P 3° +7° −3° S8GM-50-225B-6 Data Sheet G10518EJAV0DS 9 µPC4558 RECOMMENDED SOLDERING CONDITIONS The µPC4558 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Type of Surface Mount Device µPC4558G2: 8-pin plastic SOP (5.72 mm (225)) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230°C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4558C: 8-pin plastic DIP (7.62 mm (300)) Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 10 Data Sheet G10518EJAV0DS µPC4558 • The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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