2SK3659 DS - Renesas Electronics

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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
PART NUMBER
PACKAGE
low on-state resistance and excellent switching characteristics,
2SK3659
Isolated TO-220
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
•4.5V drive available.
•Low on-state resistance,
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
•Low gate charge,
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
•Built-in gate protection diode.
•Avalanche capability ratings.
•Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to source voltage (VGS = 0 V)
VDSS
20
V
Gate to source voltage (VDS = 0 V)
VGSS
±20
V
Drain current (DC) (TC = 25°C)
ID(DC)
±65
A
ID(pulse)
±260
A
Total power dissipation (TA = 25°C)
PT1
2.0
W
Total power dissipation (TC = 25°C)
PT2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Drain current (pulse)
Note1
Single Avalanche Current
Note2
IAS
35
A
Single Avalanche Energy
Note2
EAS
122
mJ
Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
©
2002
2SK3659
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
| yfs |
VDS = 10 V, ID = 40 A
15
RDS(on)1
VGS = 10 V, ID = 40 A
4.6
5.7
mΩ
RDS(on)2
VGS = 4.5 V, ID = 40 A
7.1
9.9
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
1700
pF
Output Capacitance
Coss
VGS = 0 V
700
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
250
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 40 A
16
ns
tr
VGS = 10 V
14
ns
td(off)
RG = 10 Ω
50
ns
12
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V
32
nC
Gate to Source Charge
QGS
VGS = 10 V
6.0
nC
Gate to Drain Charge
QGD
ID = 65 A
8.3
nC
VF(S-D)
IF = 65 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 65 A, VGS = 0 V
45
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
34
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
VDS
ID
Starting Tch
τ
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
PG.
2
50 Ω
10%
0
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
RL
VDD
Data Sheet D16251EJ2V0DS
td(on)
tr
ton
td(off)
tf
toff
2SK3659
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
30
80
60
40
20
25
20
15
10
5
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
PW = 100 µs
1 ms
10 ms
100 ms
ID(pulse)
R DS (on)
Limited
10
ID(DC)
DC Power Dissipation Limited
1
T C = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Rth(ch-A) = 62.5°C/W
100
10
Rth(ch-C) = 5°C/W
1
0.1
Single Pulse
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16251EJ2V0DS
3
2SK3659
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
300
Pulsed
VDS = 10 V
Pulsed
100
VGS = 10 V
200
ID - Drain Current - A
ID - Drain Current - A
250
150
4.5 V
100
50
10
Tch = 150°C
75°C
25°C
−55°C
1
0.1
0.01
0
0
0.5
1
1.5
1
2
2
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
6
100
VDS = 10 V
ID = 1 mA
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
| yfs | - Forward Transfer Admittance - S
VGS(off) – Gate Cut-off Voltage - V
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.0
Pulsed
VDS = 10 V
10
Tch = 150°C
75°C
25°C
−55°C
1
0.1
0.01
0.1
Tch - Channel Temperature - °C
20
15
VGS = 4.5 V
5
10 V
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
Pulsed
0.1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
10
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
ID - Drain Current - A
4
3
20
Pulsed
15
10
ID = 40 A
5
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet D16251EJ2V0DS
20
2SK3659
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
14
10000
ID = 40 A
Pulsed
VGS = 10 V
f = 1 MHz
10
VGS = 4.5 V
8
10 V
6
4
2
0
-50
0
50
100
Ciss
1000
Coss
Crss
100
10
0.01
150
Tch - Channel Temperature - °C
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
20
1000
VDD = 10 V
VGS = 10 V
RG = 10 Ω
100
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(off)
tf
td(on)
10
tr
16
8
VDD = 16 V
10 V
6
12
VGS
8
4
2
4
VDS
ID = 65 A
0
0
1
0
0.1
1
10
5
10
15
20
25
30
35
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
1000
trr - Reverse Recovery Time - ns
ISD - Diode Forward Current - A
0.1
VGS - Gate to Source Voltage - V
12
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
VGS = 10 V
0V
10
1
0.1
100
10
VGS = 0 V
di/dt = 100 A/µs
Pulsed
0.01
1
0
0.5
1
1.5
VSD - Source to Drain Voltage - V
0.1
1
10
100
ID - Drain Current - A
Data Sheet D16251EJ2V0DS
5
2SK3659
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
100
V DD = 10 V
R G = 25 Ω
V GS = 20 → 0 V
IAS ≤ 35 A
Energy Derating Factor - %
IAS - Single Avalanche Current - A
IAS = 35 A
10
E AS = 122 mJ
1
V DD = 10 V
R G = 25 Ω
V GS = 20 → 0 V
Starting T ch = 25°C
0.1
0.01
80
60
40
20
0
0.1
1
10
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - mH
6
25
Data Sheet D16251EJ2V0DS
2SK3659
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.0± 0.3
φ 3.2± 0.2
4.5± 0.2
2.7± 0.2
12.0± 0.2
1.3± 0.2
1.5± 0.2
2.54 TYP.
0.7± 0.1
2.54 TYP.
Drain
13.5 MIN.
4± 0.2
3± 0.1
15.0± 0.3
EQUIVALENT CIRCUIT
Body
Diode
Gate
2.5± 0.1
Gate
Protection
Diode
Source
0.65± 0.1
1.Gate
2.Drain
3.Source
1 2 3
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D16251EJ2V0DS
7
2SK3659
• The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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