Preliminary Data Sheet 2SJ210C P-CHANNEL MOSFET FOR SWITCHING R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2 MAX. (VGS = -4.5 V, ID = -50 mA) Ordering Information Part Number Lead Plating Packing Package 2SJ210C-T1B-A/AT -A : Sn-Bi , -AT : Pure Sn 3000p/Reel SC-59 (3pMM) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XG Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS -60 V Gate to Source Voltage (VDS = 0 V) VGSS ∓20 V Drain Current (DC) ID(DC) ∓200 mA Drain Current (pulse) Note ID(pulse) ∓800 mA Total Power Dissipation PT 200 mW Channel Temperature Tch 150 C Storage Temperature Tstg 55 to 150 C Note PW 10 s, Duty Cycle 1% R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Page 1 of 6 2SJ210C Electrical Characteristics (TA = 25C) Characteristics Symbol Test Conditions MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V -1 A Gate Leakage Current IGSS VGS = ∓20 V, VDS = 0 V ∓10 A VGS(off) VDS = VGS, ID = -250 A -1.0 -2.5 V | yfs | VDS = -10 V, ID = -100 mA 150 RDS(on)1 VGS = -10 V, ID = -100 mA 1.8 2.7 RDS(on)2 VGS = -4.5 V, ID = -50 mA 2.0 3.2 Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note mS Input Capacitance Ciss VDS = -10 V, 9 pF Output Capacitance Coss VGS = 0 V, 7 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 2 pF Turn-on Delay Time td(on) VDD = -10 V, 75 ns tr ID = -200 mA, 110 ns td(off) VGS = -10 V, 900 ns RG = 10 400 ns ID = -200 mA, VDD = -25 V, VGS = -10 V 2.2 nC IF = 200 mA, VGS = 0 V 0.86 V Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge Body Diode Forward Voltage QG Note VF(S-D) Note Pulsed Test Circuit Switching Time R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Page 2 of 6 2SJ210C Typical Characteristics (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA –1 ID(pulse)= –800mA 10ms 80 60 40 20 ID(DC)= –200mA 100ms –0.1 DC Power Dissipation Limited TA=25°C Single Pulse 0 0 25 50 75 100 125 150 –0.01 –1 175 –10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –1 –1 –4.5 V –0.8 ID - Drain Current - A ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS VGS = –10 V –0.9 –0.7 –0.6 –0.5 –0.4 –0.3 VDS= –5 V Pulsed –0.1 –0.01 TA = 125°C 100°C 75°C 25°C –0.001 –0.2 –0.1 –25°C Pulsed 0 0 –2 –4 –6 –0.0001 0 –8 VDS - Drain to Source Voltage - V –1 –2 –3 –4 –5 VGS - Gate to Source Voltage – V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT –3 –2.5 –2 –1.5 0 50 100 Tch - Channel Temperature - C R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 150 | yfs | - Forward Transfer Admittance - S 10 VDS = VGS ID = –250 µA –1 -50 –100 VDS - Drain to Source Voltage – V TA – Ambient Temperature - C VGS(off) - Gate Cut-off Voltage - V 1ms 100 ID - Drain Current - A dT - Percentage of Rated Power - % 120 TA = 125°C 1 100°C 75°C 0.1 25°C –25°C VDS= –10 V Pulsed 0.01 –0.01 –0.1 ID - Drain Current - A –1 Page 3 of 6 2SJ210C 10 Pulsed 5 VGS = –4.5 V –10 V 0 –0.001 –0.01 –0.1 –1 –10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 Pulsed ID = –100 mA 5 –50 mA 0 0 –4 –6 –8 –10 –12 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 5 100 Pulsed 4 3 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = –4.5 V, ID = –50 mA 2 –10 V, –100 mA 1 0 -25 0 25 50 75 100 Ciss 10 Coss 1 Crss VGS = 0 V f = 1.0 MHz 0.1 –0.1 125 Tch - Channel Temperature - C –10 –100 DYNAMIC INPUT CHARACTERISTICS –10 1000 VGS – Gate to Source Voltage - V td(off) tf tr 100 td(on) 10 VDD = –10 V, VGS = –10 V RG = 10 Ω 1 –0.001 –1 VDS - Drain to Source Voltage – V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns –2 VGS – Gate to Source Voltage - V –0.01 –0.1 ID - Drain Current - A R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 –8 VDD = –48 V –30 V –6 –25 V –4 –2 ID = –200 mA 0 –1 0 1 2 3 QG – Gate Chage - nC Page 4 of 6 2SJ210C SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF – Diode Forward Current - A –1 –0.1 –0.01 –0.001 0 –0.2 –0.4 –0.6 –0.8 –1 –1.2 VF(S-D) – Source to Drain Voltage - V R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Page 5 of 6 2SJ210C Package Drawings (Unit: mm) SC-59 (Mini Mold) 0.4 +0.1 –0.05 2.8 ±0.2 0.65 +0.1 –0.15 1.5 0.95 3 0.4 +0.1 –0.05 0.95 2.9 ±0.2 2 1 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 Marking 1. Source 2. Gate 3. Drain Equivalent Circuit Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Page 6 of 6 2SJ210C Description Rev. Date 1.00 2.00 Sep , 2013 Jun, 2015 Page 3, 4, 5 3 Summary First Edition Issued Changed all graphs Added FORWARD BIAS SAFE OPERATING AREA All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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