INDEX Following is the sample part number. Please click on similar one. RJK0222DNS-00-#Q5 p2. BB505CES-TL-E p13. RQA0004PXDQS#H1 p4. TBB1005EMTL-E p14. 2SK2158A–T1B-AT p5. CR08AS-12A-AT14#B10 p15. 2SJ182L-E p5. BCR16PM-12LA-xA8#B00 p16. N0400P(x)-ZK-E1-AY p6. RD6.8FM(0)-T1-AY p17. μPA2735xGR–E1-AT p7. NNCD6.2(0)LH-T1-AT p18. HAF2007-90S-TL-E p8. NSAD500S-T1-A p19. HAT2256R-EL-E p9. μPD166010T1F-E1-AY p20. H5N5004PL-E0-E#T2 p10. 1SS270ATD-EQ p21. NP110N04PUK-E1-AY p11. HSM88WATR-EQ p22. FA4A3Q-T1B-A p12. ©2012. Renesas Electronics Corporation, all rights reserved. RKZ6.8Z4…..KL-1R1Q p23. Go to index page RJ K 02 22 D NS - 00 - #Q 5 Renesas RJ Series Power Device Product series E MOS Pch w/ function F MOS Nch w/ function H IGBT + Diode J Power MOS Pch K Power MOS Nch L Power MOS Nch Built-in High Speed Diode Lead-free code 0 Serial number Package code 1 (See next page) High reliability 1 5 P High reliability 2 6 D Industrial A Consumer S Special Power MOS Pch & Nch P IGBT 01 10-19 Q Multi-Chip device 02 20-29 S SiC-SBD*1 03 30-39 40 400-409 U Diode(FRD, etc) 04 40-49 43 430-439 06 60-69 45 450-459 08 80-89 50 500-509 10 100-109 60 12 120-129 15 Voltage class(V) *1 SiC: Silicon Carbide SBD:Schottky Barrier Diode Renesas RJ Series Power Devices Lead-free*1 3 J w/o Bi w/ Bi 2 Quality grade M Lead-free w/o Bi w/ Bi Halogen-free Lead-free w/o Bi w/ Bi *1: High-melting-point solder excepted in RoHS is contained internally. Packing 0 Bulk(Plastic bag) 1 Bulk(Tray) H Emboss taping (Left) J Emboss taping (Left) Large Q Emboss taping (Right) Large 600-609 T Tube 65 650-659 W Wafer 150-159 1B 1100-1199 X Chip 20 200-209 1C 1200–1299 25 250-259 1D 1300–1399 30 300-309 Optional index by product series Ex: RJK0222DNS is N channel MOS FET in HWSON3046-8 package. ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page RJ K 02 22 D NS - 00 - #Q 5 Renesas RJ Series Power Device Lead-free code Packing Optional specific special code Product series Voltage class(V) (See previous page) Serial number (See previous page) Quality grade Package code GE JE PA PB TSOJ-8 TO-92MOD WPAK, WPAK(3) LFPAK 2.95 x 2.3 (2.95 x 2.65) 4.8 x 18.1 (4.8 x 8.0) 5.1 x 6.1 (4.9 x 5.9) PJ LDPAK(L) 10.2 x 21.0 (12.2 x 10) PK TO-3P TO-3PSG QS MPAK UPAK 4.5 x 4.25 (4.5 x 2.5) PE DPAK(S) MP-3A 6.5 x 9.5 (6.5 x 7) 6.6 x 10.4 (6.6 x 6.1) PN LDPAK(S) LDPAK(S)-(1) 10.2 x 13.0 (10.2 x 10) 6.5 x 9.5 (6.5 x 7) PP PQ TO-3PFM, TO-3PFM-5 TO-220AB, TO-220AB-2L TO-220FP, TO-220FP-2L TO-247, TO-247A TO-220FL (6.5 x 9.5) (15.6 x 18.7) 15.9 x 40.9 (15.9 x 19.9) QA 2.95 x 2.8 (2.95 x 1.5) PM 4.9 x 6.1 (4.9 x 3.95) PD SC 11.5 x 29 (11.5 x 15) 10.16 x 28.85 (10.16 x 15.87) 15.94 x 41.32 (15.94 x 21.13) SP NS HSOP-20 FP-8DA HVSON3333 WSON0504-2 HWSON3046-8 WSON0303-6 15.9 x 14.0 (14.1 x 11.0) 4.9 x 6.1 (4.9 x 3.95) Ex: RJK0222DNS is N channel MOS FET in HWSON3046-8 package. ©2012. Renesas Electronics Corporation, all rights reserved. 3.0 x 3.0 3.3 x 3.3 4.8 x 3.2 5.0 x 4.0 Note: Codes shown in gray color are optional. Go to index page RQ A 0004 PX D QS #H1 Renesas RQ Series Transistor Packing and lead-free code H1 H3 Product series A RF Power MOSFET J Power MOSFET Pch K Power MOSFET Nch Emboss taping (Left) H6 Package code Serial number Extension for serial number Lead-free w/ Bi Lead-free w/ Bi*1 Halogen-free, Lead-free w/ Bi *1: High-melting-point solder excepted in RoHS is contained internally. QA QS NS MPAK UPAK WSON0303-6 WSON0504-2 2.95 x 2.8 (2.95 x 1.5) 4.5 x 4.25 (4.5 x 2.5) 3.0 x 3.0 (3.0 x 3.0) 5.0 x 4.0 x 0.8 Reliability code D Industrial Renesas RQ Series Transistors Ex: RQA0004PXDQS is RF MOSFET in UPAK package. ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page 2SK 2158A – T1B - AT Renesas Transistors in JEITA name system Header of transistor in JEITA name system JEITA name Lead-free code 2SC NPN high frequency transistor 2SD NPN low frequency transistor 2SA PNP high frequency transistor 2SB PNP low frequency transistor 2SK N ch FET 2SJ P ch FET Product revision Taping direction A Lead-free, Sn-Bi AZ Lead-free*1, Sn-Bi AT Lead-free, Sn AY Lead-free*1, Matte-Sn *1: High-melting-point solder excepted in RoHS is contained internally. E1 E2 T1B T2B T1 2SJ 182 L- E T2 Lead-free code Package code L DPAK(L) 10.2 x 21.0 (12.2 x 10) R E Lead-free － S DPAK(L)-(2) FP-8DA DPAK(S)-1 DPAK(S) 6.5 x 23.4 (6.5 x 7.2) 4.9 x 6.1 (4.9 x 3.95) 10.2 x 13.0 (10.2 x 10) 6.5 x 9.5 (6.5 x 7) TO-220FM 10.5 x 31 (10 x 17) Ex: 2SK2158 is High speed switching N channel MOSFET in SC-59 package. ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page N 04 00 P (x) - ZK- E1 - AY Lead-free code Renesas N Series Transistor Optional special specifications Voltage Code(V) 01 10-19 02 20-29 03 30-39 04 40-49 05 50-59 06 60-69 08 80-89 25 250-259 Classification R PNP-Tr S NPN-Tr P Pch-FET N Nch-FET Taping direction A Lead-free, Sn-Bi AZ Lead-free*1, Sn-Bi AT Lead-free, Sn AY Lead-free*1, Matte-Sn *1: High-melting-point solder excepted in RoHS is contained internally. E1 T1 E2 T1B Packaging code - ZK S ZP Serial number, Packages NxxxxR SOT-23F NxxxxS SOT-23F NxxxxP SOT-23F, 3pin TMM, MP-3ZK NxxxxN 3pin XSOF03, 3pin TMM, SOT-23F, MP-45F, MP-25K(TO-220), MP-25ZK(TO-263) Renesas N Series Transistors Ex: N0400P is P channel MOSFET in MP-3ZK package. ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page μPA 2735 x GR – E1 - AT Renesas μPA Series Transistor Lead-free code Package Code Revision Code Serial number 80,81*1 C/GR 16pin DIP/SOP 2200-11 T1M 8pin VSOF(1629) 500-05 T 5pin MM(SC-74A) 2350-72, 2380 507, 508 TE 5pin TMM(SC-95) T1G/ T1P 4pin EFLIP/ 4pin EFLIP-LGA 509 TA 5pin MM(SC-74A) 2374-78 T1P 6pin EFLIP-LGA 2460-65 T1Q 8pin HUSON(2027) 2520-93 T1H 8pin VSOF(2429) 2650, 2680 T1E 6LD3x3MLP 2670-72 T1R 8pin HUSON(2027) 2700-2721 GR 8pin TSSOP T1A 8pin HUSON(2027) 570-04 T 600-09 T 6pin MM(SC-74) 610,611 TA 620-22, 650-54 TT 6pin WSOF(1620) 670-75/677-79 T/TB 6pin SSP(SC-88) 800-13*2 T 6pin 65MM 828-895*2 TD 6pin L2MM(1208) 2722-27, 2731-32, 2743-49, 2760, 2763 900*3 TU GR 8pin SOP 17xx G 8pin SOP 2728, 2733-42, 2750-57, 2761-62, 2770-94 1803-1890 GR 8pin TSSOP 2800-13, 2821-22 T1L 8pin HVSON(3333) 1901-81 TE 6pin TMM(SC-95) 2814-20, 2825 T1S HWSON-8 2001-04 C/GR 16pin DIP/SOP 2987 GS 16pin DIP Renesas μPA Series Transistors Ex: μPA2735GR is Switching N channel MOSFET in 8pin SOP package. ©2012. Renesas Electronics Corporation, all rights reserved. A Lead-free, Sn-Bi AZ Lead-free*4, Sn-Bi AT Lead-free, Sn AY Lead-free*4, Matte-Sn Taping direction E1 E2 T1 T2 *1: PNP-NPN transistor array. *2: NPN Bipolar transistors(with built-in 2 elements). *3: NPN SiGe transistor(IC) for RF. *4: High-melting-point solder excepted in RoHS is contained internally. Note: Codes shown in gray color are optional. Go to index page HAF 2 007 - 90 S - TL - E Renesas HAT Series Thermal FET Lead-free code E Taping direction Classification 1 Pch 2 Nch Serial number TL Package code DPAK(L) 10.2 x 21.0 (12.2 x 10) Tape pulling direction R DPAK(L)-(2) FP-8DA 6.5 x 23.4 (6.5 x 7.2) 4.9 x 6.1 (4.9 x 3.95) S - DPAK(S)-1 DPAK(S) TO-220FM 10.2 x 13.0 (10.2 x 10) 6.5 x 9.5 (6.5 x 7) 10.5 x 31 (10 x 17) Renesas HAF Series Thermal FET Power Transistors Ex: HAF2007-90S is N channel MOSFET in DPAK(S) package. ©2012. Renesas Electronics Corporation, all rights reserved. TL TR TR L Special specification number Lead-free Note: Codes shown in gray color are optional. Go to index page HAT 2 256 R - EL - E Lead-free code Renesas HAT Series Power Transistor E Lead-free Taping direction Classification 1 Pch 2 Nch 3 Nch /Pch EL Tape pulling direction Package code H R C WP LFPAK FP-8DA CMFPAK-6 WPAK 4.9 x 6.1 (4.9 x 3.95) 4.9 x 6.1 (4.9 x 3.95) 2.0 x 2.1 (2.0 x 1.7) 5.1 x 6.1 (4.9 x 5.9) Serial number Power HAT Series Power Transistors Ex: HAT2256R is N channel MOSFET in FP-8DA package. ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page H5 N 50 04 PL - E0 - E #T2 Packing code Renesas Power Transistor Serial number Series name Voltage code (V) H5 H5 Series H7 H7 Series 02 20-29 H8 H8 Series 03 30-39 04 40-49 06 60-69 Classification Optional special specifications Lead-free code - Bulk E T2 Tube Lead-free Package code DS DL LS DPAK(S) DPAK(L)-(2) LDPAK(S)-(1) 6.5 x 9.5 (6.5 x 7) 6.5 x 23.4 (6.5 x 7.2) 10.2 x 13.0 (10.2 x 10) 10.2 x 21.0 (12.2 x 10) AB FL FM FP TO-220AB TO-220FL TO-220FM 10 x 27.5 (10 x 15) 10 x 31 (10 x 17) P P Pch 08 80-89 N Nch 10 100-109 15 150-159 20 200-209 23 230-239 11.5 x 29 (11.5 x 15) 25 250-259 MD 28 380-289 TO-92MOD 30 300-309 50 500-509 4.8 x 18.1 (4.8 x 8.0) TO-3P 15.6 x 37.9 (15.6 x 19.9) PF LD DPAK(L) TO-220FP 10.16 x 28.85 (10.16 x 18.87) PL TO-3PFM TO-3PL 15.6 x 40.9 (15.9 x 19.9) 20 x 46 (20 x 26) Renesas H5N, H5P, H7N, H7P, H8N Series Power Transistors 60 600-609 Ex: H5N5004PL is N channel MOSFET in TO-3PL package. ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page NP 110 N 04 P U K - E1 - AY Lead-free code Renesas NP Series Power MOSFETs ID(DC) Rating(A) Series Name (Generation) Classification 15 15 70 70 P Pch 16 16 74 74 N Nch 20 20 75 75 22 22 80 80 23 23 82 82 28 28 83 83 32 32 84 84 33 33 88 88 34 34 89 89 35 35 90 90 36 36 100 100 40 40 109 109 48 48 110 110 50 50 160 160 52 52 161 161 55 55 180 180 60 60 VDSS(V) B w/ diode 2.5V 03 30 L w/ diode 4.5V 04 40 H w/ diode 10V 055 55 D w/o 4.5V 06 60 U w/o 10V 075 75 10 100 Package Code M MP-25ZK MP-25K (TO-220) N P Lead-free, Sn-Bi AZ Lead-free*1, Sn-Bi AT Lead-free, Sn AY Lead-free*1, Matte-Sn *1: High-melting-point solder excepted in RoHS is contained internally. Protection diode/ Source drive voltage K A T MP-25SK MP-25ZP MP-25ZT (TO-262) (TO-263) (TO-263-7p) Taping direction E1 E2 NP series features: Super low on-state resistance(Ron) Low total gate charge(QG) High current rating High reliability(Compliant AEC-Q101) H S V Y MP-3 MP-3ZK MP-3ZP (TO-252) 8pin HSON 6.5 x 10.4 (6.5 x 6.1) 6.5 x 10.4 6 x 5.15 (6.5 x 6.1) (5.4 x 5.15) 10 x 15.25 10 x 29.6 10 x 23.8 10 x 15.25 10 x 14.85 6.5 x 13.7 (10 x 9.15) (10 x 15.9) (10 x 10.1) (10 x 9.15) (10 x 9.15) (6.5 x 5.5) Renesas NP Series Power MOSFETs Ex: NP110N04PUK is N channel MOSFET in MP-25ZP package(40V/110A). ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page F A4 A 3 Q - T1B - A Paradigm of R1,R2 (KΩ)Combination Code Lead-free code R1 R2 R1 R2 10n of R1 Index *1 Package code F 3pin MM (2.9 x 2.8 x 1.4) G 3pin SSP 2 102 3 103 4 104 H K 3pin PoMM A Lead-free, Sn-Bi A4A - 10 F4N 22 47 A R1=0 AZ Lead-free*4, Sn-Bi A3M 1 1 F4Z 22 - 10/47 AT Lead-free, Sn A3Q 1 10 J3P 3.3 10 L 0.47 AY Lead-free*4, Matte-Sn A4L 10 4.7 L2N 0.47 1 M 1 Taping direction A4M 10 10 L2Q 0.47 4.7 T1B A4P 10 47 L3M 4.7 4.7 K N 10/4.7 A 1 P 10/2.2, 47/10 A4Z 10 - L3N 4.7 10 F 2.2 Q 10 F2Q 0.22 2.2 L3Z 4.7 - L 4.7 R 47/2.2 F3M 2.2 2.2 L4K 47 10 F3P 2.2 10 L4L 47 22 F3R 2.2 47 L4M 47 47 F4M 22 22 L4Z 47 - 3.3 Z 0 *1: When R1 =0, it shows R2 value. Classification & Specification A4 Small signal NPN (IC=100mA) type A B1 Semi-power NPN (IC=700mA) type A 4.5 x 4.0 (4.5 x 2.5) D1 Semi-power NPN (IC=1000mA) type A 3pin USM D2 Semi-power NPN w/ ZeDi (IC=1000mA) type C N4 Small signal PNP (IC=-100mA) type B P1 Semi-power PNP (IC=-700mA) type B 1.6 x 1.6 x 0.75 (1.6 x 0.8 x 0.75) T2B R1 Value J (2.0 x 2.1 x 0.9) R2/R1 Ratio Q1 Semi-power PNP (IC=-2000mA) type B R1 Semi-power PNP (IC=-1000mA) type B *4: High-melting-point solder excepted in RoHS is contained internally. Equivalent Circuit (type) Type A B C R1 Type B B C Type C B R1 R2 E C R1 R2 E R2 E Renesas transistors with built-in resistor Ex: FA4A3Q is NPN transistor with built-in resistor in 3pin MM package (IC=100mA , R1=1KΩ, R2=10KΩ） ©2012. Renesas Electronics Corporation, all rights reserved. Go to index page BB 5 05 C ES - TL - E BB Series Build in Biasing Circuit Transistor Lead-free code E Lead-free Taping direction TL Use/Process 5 TR UHF/VHF Amplifier Tape pulling direction Extension for serial number Package code M C Serial number, Marking VDS(V) ID(mA) Ciss(pF) typ NF(dB) typ 502 BS 6 20 1.7 [email protected] 505 ES 6 20 1.75 [email protected] 506 FS 6 30 1.6 [email protected] Renesas BB Series Build-in Biasing Circuit Transistors Ex: BB505C is Build-in Biasing Circuit MOSFET in CMPAK-4 package. ©2012. Renesas Electronics Corporation, all rights reserved. Go to index page TBB 1005 EM TL - E TBB Series Build in Biasing Trasistor(Twin type) Lead-free code E Package Lead-free Taping direction TL TR Tape pulling direction Extension for serial number Serial number, Marking Ratings VDS(V) FET1 Characteristics ID(mA) Ciss(pF) typ lyfsl(mS) typ FET2 Characteristics NF(dB) typ Ciss(pF) typ lyfsl(mS) typ NF(dB) typ 04 DM 6 30 1.8 26 [email protected] 2.7 32 [email protected] 05 EM 6 30 1.8 26 [email protected] 2.6 25 [email protected] 10 KM 6 30 2.1 29 [email protected] 2.1 29 [email protected] 12 MM 6 30 1.6 32 [email protected] 2.7 30 [email protected] 16 RM 6 30 2.2 35 [email protected] 2.2 35 [email protected] Renesas TBB Series (Twin type) Build in Biasing Circuit Transistors Ex: TBB1005EM is Twin Build-in Biasing Circuit MOSFET in CMPAK-6 package. ©2012. Renesas Electronics Corporation, all rights reserved. Go to index page CR 08 AS - 12 A - A T14 #B 1 0 CR: Renesas Thyristor CRD: Renesas Reverse conduction Thyristor CAS number Lead forming, Packing IT(AV)(A) 02 0.3 03 0.3 04 0.4 05 08 - 8 400 0.1, 0.3, 0.5 12 600 0.8 16 800 2 2 3 3 5 5 6 6 8 8 12 12 25 25 IGT item Classification VDRM(V) A B D G UE ME Lead-free type 110℃, 125℃ 125℃ 150℃ 150℃ TO-220F(new ver.) New Chip, (IGT;μA) New Chip, (IGT;mA) None 0 Terminal lead-free 1 Completed lead-free free Reliability code A 1 - 30μA B 20 - 50μA C 40 -100μA D 1 - 50μA F E 20 - 100μA G B C Industry use Standard Consumer use Standard Custom J Halogen-free P For other use Custom Package AS UPAK MP-3A BS CS AM BM CM LM MPAK LDPAK(S)-(1) TO-92 TO-220AB TO-220FL TO-220F 10.2 x 13.0 (10.2 x 10) 5 x 16.5 (5 x 5) 10.5 x 28.5 (10.5 x 16) 10 x 27.5 (10 x 15) 10.5 x 30.5 (10.5 x 17) 4.5 x 4.25 6.6 x 10.4 2.95 x 2.8 (4.5 x 2.5) (6.6 x 6.1) (2.95 x 1.5) PM RM TO-3PFM 15.6 x 40.9 (15.9 x 19.9) Renesas Thyristors Ex: Part number CR08AS-12A is Thyristor (0.8A/600V) in UPAK package . ©2012. Renesas Electronics Corporation, all rights reserved. Note: Codes shown in gray color are optional. Go to index page BCR 16 PM - 12 L A - x A8 # B 0 0 Renesas Triac IT(RMS)(A) 08 0.8 1 1 2 2 3 3 4 4 5 5 6 6 CAS number Lead forming, Packing Package VDRM(V) DS, FS 8 400 UPAK SOT-223 12 600 14 700, 800 16 800 20 1000 30 1500 6.6 x 7.0 (6.6 x 3.5) AS, BS CS MP-3A LDPAK(S)-(1) 8 8 10 10 12 12 16 16 20 20 AM, BM EM CM 25 25 TO-92 MP-5 (TO-126) TO-220AB 30 30 40 40 8.5 x 25.0 (8.5 x 12) 10.5 x 28.5 (10.5 x 16) None 1 Standard High-sensitivity 1 Completed lead-free Others Commutation characteristics None, L B C Guaranteed Non-guaranteed F G 5 x 16.5 (5 x 5) Terminal leadfree Internal Code Reliability code R 6.6 x 10.4 (6.6 x 6.1) 0 IGT item AS, ES 4.5 x 4.25 (4.5 x 2.5) Internal Code 10.2 x 13.0 (10.2 x 10) General Industry & General consumer use Standard Special consumer use Standard Custom Custom Classification PM LM TO-220F TO-220FL FM, FR RM AM TO-220FP TO-3PFM TO-3P A 125℃, Standard B 150℃, Standard C 150℃, Application specified D 10.5 x 30.5 (10.5 x 17) 10 x 27.5 (10 x 15) 10.16 x 28.85 15.6 x 40.9 15.6 x 37.9 (10.16 x 15.87) (15.9 x 19.9) (15.9 x 19.9) E TO-220F(2) G TO-220F(new ver.) H High Commutation Renesas Triacs Ex: Part number BCR16PM-12LA is Triac (16A/600V) in TO-220F package. ©2012. Renesas Electronics Corporation, all rights reserved. J Next-Gen Chip K Logic Level Note:Codes shown in gray color are optional. Go to index page RD 6.8 FM (0) - T1 - AY Renesas RD Serise Zener Diode Lead-free code Special support Package Standard VZ(V)* 2.0 1.9 - 2.2 8.2 7.7 - 8.7 36 34.0 - 38.0 2.2 2.1 - 2.4 9.1 8.5 - 9.6 39 37.0 - 41.0 2.4 2.3 - 2.6 10 9.4 - 10.6 43 40.0 - 45.0 2.7 2.5 - 2.9 11 10.4 - 11.6 47 44.0 - 49.0 3.0 2.8 - 3.2 12 11.4 - 12.6 51 48.0 - 54.0 3.3 3.1 - 3.5 13 12.4 - 14.1 56 53.0 - 60.0 3.6 3.4 - 3.8 15 13.8 - 15.6 62 58.0 - 66.0 3.9 3.7 - 4.1 16 15.3 - 17.1 68 64.0 - 72.0 4.3 4.0 - 4.5 18 16.8 - 19.1 75 70.0 - 79.0 4.7 4.4 - 4.9 20 18.8 - 21.2 82 77.0 - 87.0 5.1 4.8 - 5.4 22 20.8 - 23.3 91 85.0 - 96.0 5.6 5.3 - 6.0 24 22.8 - 25.6 100 94.0 - 106.0 6.2 5.8 - 6.6 27 25.1 - 28.9 110 104.0 - 116.0 6.8 6.4 - 7.2 30 28.0 - 32.0 120 114.0 - 126.0 7.5 7.0 - 7.9 33 31.0 - 35.0 FM S 200mW SL 200mW low noise UJ 150mW low noise UM 150mW MW 200mW Dual type Renesas RD Series Zener Diodes Ex: RD6.8FM is Zenner diode(VZ=6.8V) in 2pin PoMM package. Lead-free, Sn-Bi AZ Lead-free*1, Sn-Bi AT Lead-free, Sn AY Lead-free*1, Matte-Sn *1: High-melting-point solder excepted in RoHS is contained internally. FS *The VZ range are FM,FS,S package products, the SL,UJ,UM & MW packages are little different range. ©2012. Renesas Electronics Corporation, all rights reserved. 1000mW A Taping direction T1 T2 T1B T2B Not recommend or EOL T1 T2 T4 Ammo pack Box (2000 pcs/box） Ammo pack Real (5000pcs/box） Ammo pack Box (5000 pcs/box） Note: Codes shown in gray color are optional. Go to index page NNCD 6.2 (0) LH - T1 - AT Renesas NNCD Series ESD Noise-Clipping Diode Breakdown voltage(V)* Special specifications section number Lead-free code Package & products feature 2.0 1.90 - 2.20 10 9.45 - 10.58 DA 2.2 2.10 - 2.40 11 10.40 - 11.60 DT High ESD, 2-way connection 2.4 2.30 - 2.60 12 11.38 - 12.64 MDT 2.7 2.50 - 2.90 13 12.43 - 14.00 Low capacitance, High ESD, 2-way connection 3.3 3.10 - 3.50 15 13.80 - 15.56 3.6 3.40 - 3.80 16 15.31 - 17.14 3.9 3.70 - 4.10 18 16.89 - 19.06 4.3 4.00 - 4.49 20 18.80 - 21.14 4.7 4.40 - 4.92 22 20.81 - 23.25 5.1 4.82 - 5.39 24 22.86 - 25.66 5.6 5.29 - 5.94 27 25.10 - 28.90 6.2 5.84 - 6.55 30 28.00 - 32.00 6.8 6.44 - 7.17 33 31.00 - 35.00 7.5 7.03 - 7.87 36 34.00 - 38.00 8.2 7.73 - 8.67 39 37.00 - 41.00 9.1 8.53 - 9.58 C 200mW 150mW High ESD A Lead-free, Sn-Bi AZ Lead-free*4, SnBi AT Lead-free, Sn AY Lead-free*4, Matte-Sn High ESD T1 F MF 200mW Dual type ST G LG, RG Low capacitance, High ESD High ESD Note: Codes shown in gray color are optional. *4: High-melting-point solder excepted in RoHS is contained internally. Low capacitance MG Low capacitance, High ESD H, PH High ESD *The Breaksond voltage range are DA package LH, RH products, Others package are little different range. T1B High ESD High ESD, 2-way connection 200mW Quad type T2 Low capacitance Renesas NNCD Series ESD Noise-Clipping Diodes Ex: NNCD6.2LH is Quad type ESD Noise-Clipping Diode in 5pin SSP package. ©2012. Renesas Electronics Corporation, all rights reserved. Go to index page NSAD 500 S - T1 - A Renesas NSAD Series Surge Absorber Diode Lead-free code Lead-free, Sn-Bi AT Lead-free, Sn Tapping direction Package NSAD Series 500 A VBO(V) typ. C(pF) typ. ESD(kV) min 8 3.5 8 Low capacity ESD surge absorber for 100 to 500 Mbps-class data line ESD noise protection. F 200mW Dual type S 150mW Dual type H 200mW Quad type T1 T1B Renesas NSAD Series Surge Absorber Diodes Ex: NSAD 500S is Dual type Surge Absorber Diode in 3pin SSP package. ©2012. Renesas Electronics Corporation, all rights reserved. Go to index page μPD 166 0 10 T1F - E1 - AY Renesas Device Product Series 166 005GR 007T1F 009T1F 010T1F 011TIJ 013TIJ 015GR 017TIF 019TIF 020T1F 021T1F 100GR 101GR 104GS Lead-free code Serial No. Intelligent Power Device VDSS (V) 35 28 28 28 28 28 35 28 28 28 28 40 40 100 IL(A) 2 30 30 30 Self limited Self limited 2 Self limited Self limited Self limited Self limited Self limited Self limited Self limited RDS(on) PD(W) Ch (mΩ) 100 1 1 10 59 1 10 59 1 10 59 1 25 2 2 60 2 2 100 1.5 2 6 1.2 1 13.5 59 1 10 1.2 1 10 1.2 1 160 1.5 1 160 2 2 90 2 2 AZ Lead-free*1, Sn-Bi AY Lead-free*1, Matte-Sn *1: High-melting-point solder excepted in RoHS is contained internally. Taping direction E1 Drow-out side E2 Drow-out side Package GR GS T1F TiJ 8-pin SOP 20-pin SOP 5-pin TO-252 (MP-3ZK) 12-pin HSSOP 5.35 x 6.0 (5.35 x 4.4) 12.7 x 7.7 (12.7 x 5.6) 6.5 x 9.8 (6.5 x 6.1) 7.8 x 10.3 (6.4 x 7.5) Type 0 High Side 1 Low Side Renesas Intelligent Power Device Ex: μPD166005GR is Single N-channel High Side Intelligent Power Device in 8-pin SOP package. ©2012. Renesas Electronics Corporation, all rights reserved. Not recommend or EOL Go to index page 1SS270ATD-EQ / 1SS55-T4-AZ 1 S S 55 - T4 - AZ Lead-free code A Lead-free, Sn-Bi AZ Lead-free*1, Sn-Bi AT Lead-free, Sn AY Lead-free*1, Matte-Sn *1: High-melting-point solder excepted in RoHS is contained internally. Packing Specification T1 T2 T4 Ammo pack Box (2000 pcs/box） Ammo pack Real (5000pcs/box） Ammo pack Box (5000 pcs/box） Other： T6 Reel 2500/reel T7 Box 2500/box T8 Box 5000/box 21 ©2012. Renesas Electronics Corporation, all rights reserved. Not recommend or EOL HSM88WATR-EQ Go to index page Packing information: go to p24 22 ©2012. Renesas Electronics Corporation, all rights reserved. Not recommend or EOL RKZ6.8Z4…..KL-1R1Q Go to index page Packing information: go to p24 ©2012. Renesas Electronics Corporation, all rights reserved. Not recommend or EOL HZ/RKZ/1S Packing abbreviation 24 ©2012. Renesas Electronics Corporation, all rights reserved. Go to index page