E - Renesas

INDEX
Following is the sample part number. Please click on similar one.
RJK0222DNS-00-#Q5
p2.
BB505CES-TL-E
p13.
RQA0004PXDQS#H1
p4.
TBB1005EMTL-E
p14.
2SK2158A–T1B-AT
p5.
CR08AS-12A-AT14#B10
p15.
2SJ182L-E
p5.
BCR16PM-12LA-xA8#B00
p16.
N0400P(x)-ZK-E1-AY
p6.
RD6.8FM(0)-T1-AY
p17.
μPA2735xGR–E1-AT
p7.
NNCD6.2(0)LH-T1-AT
p18.
HAF2007-90S-TL-E
p8.
NSAD500S-T1-A
p19.
HAT2256R-EL-E
p9.
μPD166010T1F-E1-AY
p20.
H5N5004PL-E0-E#T2
p10.
1SS270ATD-EQ
p21.
NP110N04PUK-E1-AY
p11.
HSM88WATR-EQ
p22.
FA4A3Q-T1B-A
p12.
©2012. Renesas Electronics Corporation, all rights reserved.
RKZ6.8Z4…..KL-1R1Q
p23.
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RJ K 02 22 D NS - 00 - #Q 5
Renesas RJ
Series Power Device
Product series
E
MOS Pch w/ function
F
MOS Nch w/ function
H
IGBT + Diode
J
Power MOS Pch
K
Power MOS Nch
L
Power MOS Nch
Built-in High Speed Diode
Lead-free code
0
Serial
number
Package code
1
(See next page)
High reliability 1
5
P
High reliability 2
6
D
Industrial
A
Consumer
S
Special
Power MOS Pch & Nch
P
IGBT
01
10-19
Q
Multi-Chip device
02
20-29
S
SiC-SBD*1
03
30-39
40
400-409
U
Diode(FRD, etc)
04
40-49
43
430-439
06
60-69
45
450-459
08
80-89
50
500-509
10
100-109
60
12
120-129
15
Voltage class(V)
*1 SiC: Silicon Carbide
SBD:Schottky Barrier Diode
Renesas
RJ Series
Power Devices
Lead-free*1
3
J
w/o Bi
w/ Bi
2
Quality grade
M
Lead-free
w/o Bi
w/ Bi
Halogen-free
Lead-free
w/o Bi
w/ Bi
*1: High-melting-point solder excepted
in RoHS is contained internally.
Packing
0
Bulk(Plastic bag)
1
Bulk(Tray)
H
Emboss taping
(Left)
J
Emboss taping
(Left) Large
Q
Emboss taping
(Right) Large
600-609
T
Tube
65
650-659
W
Wafer
150-159
1B
1100-1199
X
Chip
20
200-209
1C
1200–1299
25
250-259
1D
1300–1399
30
300-309
Optional index by
product series
Ex: RJK0222DNS is N channel MOS FET in HWSON3046-8 package.
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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RJ K 02 22 D NS - 00 - #Q 5
Renesas RJ
Series Power Device
Lead-free code
Packing
Optional specific special code
Product series
Voltage class(V)
(See previous page)
Serial number
(See previous page)
Quality grade
Package code
GE
JE
PA
PB
TSOJ-8
TO-92MOD
WPAK, WPAK(3)
LFPAK
2.95 x 2.3
(2.95 x 2.65)
4.8 x 18.1
(4.8 x 8.0)
5.1 x 6.1
(4.9 x 5.9)
PJ
LDPAK(L)
10.2 x 21.0
(12.2 x 10)
PK
TO-3P
TO-3PSG
QS
MPAK
UPAK
4.5 x 4.25
(4.5 x 2.5)
PE
DPAK(S)
MP-3A
6.5 x 9.5
(6.5 x 7)
6.6 x 10.4
(6.6 x 6.1)
PN
LDPAK(S) LDPAK(S)-(1)
10.2 x 13.0
(10.2 x 10)
6.5 x 9.5
(6.5 x 7)
PP
PQ
TO-3PFM, TO-3PFM-5 TO-220AB, TO-220AB-2L TO-220FP, TO-220FP-2L
TO-247, TO-247A
TO-220FL
(6.5 x 9.5) (15.6 x 18.7) 15.9 x 40.9 (15.9 x 19.9)
QA
2.95 x 2.8
(2.95 x 1.5)
PM
4.9 x 6.1
(4.9 x 3.95)
PD
SC
11.5 x 29 (11.5 x 15)
10.16 x 28.85 (10.16 x 15.87)
15.94 x 41.32 (15.94 x 21.13)
SP
NS
HSOP-20
FP-8DA
HVSON3333
WSON0504-2
HWSON3046-8
WSON0303-6
15.9 x 14.0
(14.1 x 11.0)
4.9 x 6.1
(4.9 x 3.95)
Ex: RJK0222DNS is N channel MOS FET in HWSON3046-8 package.
©2012. Renesas Electronics Corporation, all rights reserved.
3.0 x 3.0
3.3 x 3.3
4.8 x 3.2
5.0 x 4.0
Note:
Codes shown in gray color are optional.
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RQ A 0004 PX D QS #H1
Renesas RQ
Series Transistor
Packing and lead-free code
H1
H3
Product series
A
RF Power MOSFET
J
Power MOSFET Pch
K
Power MOSFET Nch
Emboss
taping (Left)
H6
Package code
Serial number
Extension for serial number
Lead-free w/ Bi
Lead-free w/ Bi*1
Halogen-free,
Lead-free w/ Bi
*1: High-melting-point solder excepted
in RoHS is contained internally.
QA
QS
NS
MPAK
UPAK
WSON0303-6 WSON0504-2
2.95 x 2.8
(2.95 x 1.5)
4.5 x 4.25
(4.5 x 2.5)
3.0 x 3.0
(3.0 x 3.0)
5.0 x 4.0 x 0.8
Reliability code
D
Industrial
Renesas RQ Series Transistors
Ex: RQA0004PXDQS is RF MOSFET in UPAK package.
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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2SK 2158A – T1B - AT
Renesas Transistors
in JEITA name system
Header of
transistor in
JEITA name
system
JEITA name
Lead-free code
2SC
NPN high frequency transistor
2SD
NPN low frequency transistor
2SA
PNP high frequency transistor
2SB
PNP low frequency transistor
2SK
N ch FET
2SJ
P ch FET
Product revision
Taping direction
A
Lead-free, Sn-Bi
AZ
Lead-free*1, Sn-Bi
AT
Lead-free, Sn
AY
Lead-free*1, Matte-Sn
*1: High-melting-point solder excepted
in RoHS is contained internally.
E1
E2
T1B
T2B
T1
2SJ 182 L- E
T2
Lead-free code
Package code
L
DPAK(L)
10.2 x 21.0
(12.2 x 10)
R
E
Lead-free
-
S
DPAK(L)-(2)
FP-8DA
DPAK(S)-1
DPAK(S)
6.5 x 23.4
(6.5 x 7.2)
4.9 x 6.1
(4.9 x 3.95)
10.2 x 13.0
(10.2 x 10)
6.5 x 9.5
(6.5 x 7)
TO-220FM
10.5 x 31
(10 x 17)
Ex: 2SK2158 is High speed switching N channel MOSFET in SC-59 package.
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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N 04 00 P (x) - ZK- E1 - AY
Lead-free code
Renesas
N Series
Transistor
Optional special
specifications
Voltage Code(V)
01
10-19
02
20-29
03
30-39
04
40-49
05
50-59
06
60-69
08
80-89
25
250-259
Classification
R
PNP-Tr
S
NPN-Tr
P
Pch-FET
N
Nch-FET
Taping direction
A
Lead-free, Sn-Bi
AZ
Lead-free*1, Sn-Bi
AT
Lead-free, Sn
AY
Lead-free*1, Matte-Sn
*1: High-melting-point solder excepted
in RoHS is contained internally.
E1
T1
E2
T1B
Packaging code
-
ZK
S
ZP
Serial number,
Packages
NxxxxR
SOT-23F
NxxxxS
SOT-23F
NxxxxP
SOT-23F, 3pin TMM, MP-3ZK
NxxxxN
3pin XSOF03, 3pin TMM, SOT-23F, MP-45F,
MP-25K(TO-220), MP-25ZK(TO-263)
Renesas N Series Transistors
Ex: N0400P is P channel MOSFET in MP-3ZK package.
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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μPA 2735 x GR – E1 - AT
Renesas
μPA Series
Transistor
Lead-free code
Package
Code
Revision
Code
Serial number
80,81*1
C/GR
16pin DIP/SOP
2200-11
T1M
8pin VSOF(1629)
500-05
T
5pin MM(SC-74A)
2350-72, 2380
507, 508
TE
5pin TMM(SC-95)
T1G/
T1P
4pin EFLIP/
4pin EFLIP-LGA
509
TA
5pin MM(SC-74A)
2374-78
T1P
6pin EFLIP-LGA
2460-65
T1Q
8pin HUSON(2027)
2520-93
T1H
8pin VSOF(2429)
2650, 2680
T1E
6LD3x3MLP
2670-72
T1R
8pin HUSON(2027)
2700-2721
GR
8pin TSSOP
T1A
8pin HUSON(2027)
570-04
T
600-09
T
6pin MM(SC-74)
610,611
TA
620-22, 650-54
TT
6pin WSOF(1620)
670-75/677-79
T/TB
6pin SSP(SC-88)
800-13*2
T
6pin 65MM
828-895*2
TD
6pin L2MM(1208)
2722-27, 2731-32,
2743-49, 2760,
2763
900*3
TU
GR
8pin SOP
17xx
G
8pin SOP
2728, 2733-42,
2750-57, 2761-62,
2770-94
1803-1890
GR
8pin TSSOP
2800-13, 2821-22
T1L
8pin HVSON(3333)
1901-81
TE
6pin TMM(SC-95)
2814-20, 2825
T1S
HWSON-8
2001-04
C/GR
16pin DIP/SOP
2987
GS
16pin DIP
Renesas μPA Series Transistors
Ex: μPA2735GR is Switching N channel MOSFET in 8pin SOP package.
©2012. Renesas Electronics Corporation, all rights reserved.
A
Lead-free, Sn-Bi
AZ
Lead-free*4, Sn-Bi
AT
Lead-free, Sn
AY
Lead-free*4, Matte-Sn
Taping direction
E1
E2
T1
T2
*1: PNP-NPN transistor array.
*2: NPN Bipolar transistors(with
built-in 2 elements).
*3: NPN SiGe transistor(IC) for RF.
*4: High-melting-point solder excepted
in RoHS is contained internally.
Note:
Codes shown in gray color are optional.
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HAF 2 007 - 90 S - TL - E
Renesas
HAT Series
Thermal FET
Lead-free code
E
Taping direction
Classification
1
Pch
2
Nch
Serial number
TL
Package code
DPAK(L)
10.2 x 21.0
(12.2 x 10)
Tape pulling direction
R
DPAK(L)-(2)
FP-8DA
6.5 x 23.4
(6.5 x 7.2)
4.9 x 6.1
(4.9 x 3.95)
S
-
DPAK(S)-1
DPAK(S)
TO-220FM
10.2 x 13.0
(10.2 x 10)
6.5 x 9.5
(6.5 x 7)
10.5 x 31
(10 x 17)
Renesas HAF Series
Thermal FET Power Transistors
Ex: HAF2007-90S is N channel MOSFET in DPAK(S) package.
©2012. Renesas Electronics Corporation, all rights reserved.
TL
TR
TR
L
Special specification number
Lead-free
Note:
Codes shown in gray color are optional.
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HAT 2 256 R - EL - E
Lead-free code
Renesas
HAT Series
Power Transistor
E
Lead-free
Taping direction
Classification
1
Pch
2
Nch
3
Nch /Pch
EL
Tape pulling direction
Package code
H
R
C
WP
LFPAK
FP-8DA
CMFPAK-6
WPAK
4.9 x 6.1
(4.9 x 3.95)
4.9 x 6.1
(4.9 x 3.95)
2.0 x 2.1
(2.0 x 1.7)
5.1 x 6.1
(4.9 x 5.9)
Serial number
Power HAT Series Power Transistors
Ex: HAT2256R is N channel MOSFET in FP-8DA package.
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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H5 N 50 04 PL - E0 - E #T2
Packing code
Renesas
Power
Transistor
Serial
number
Series name
Voltage
code (V)
H5
H5 Series
H7
H7 Series
02
20-29
H8
H8 Series
03
30-39
04
40-49
06
60-69
Classification
Optional special
specifications
Lead-free code
-
Bulk
E
T2
Tube
Lead-free
Package code
DS
DL
LS
DPAK(S)
DPAK(L)-(2)
LDPAK(S)-(1)
6.5 x 9.5
(6.5 x 7)
6.5 x 23.4
(6.5 x 7.2)
10.2 x 13.0
(10.2 x 10)
10.2 x 21.0
(12.2 x 10)
AB
FL
FM
FP
TO-220AB
TO-220FL
TO-220FM
10 x 27.5
(10 x 15)
10 x 31
(10 x 17)
P
P
Pch
08
80-89
N
Nch
10
100-109
15
150-159
20
200-209
23
230-239
11.5 x 29
(11.5 x 15)
25
250-259
MD
28
380-289
TO-92MOD
30
300-309
50
500-509
4.8 x 18.1
(4.8 x 8.0)
TO-3P
15.6 x 37.9
(15.6 x 19.9)
PF
LD
DPAK(L)
TO-220FP
10.16 x 28.85
(10.16 x 18.87)
PL
TO-3PFM
TO-3PL
15.6 x 40.9
(15.9 x 19.9)
20 x 46
(20 x 26)
Renesas
H5N, H5P, H7N, H7P, H8N Series Power Transistors
60
600-609
Ex: H5N5004PL is N channel MOSFET in TO-3PL package.
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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NP 110 N 04 P U K - E1 - AY
Lead-free code
Renesas NP Series
Power MOSFETs
ID(DC) Rating(A)
Series Name
(Generation)
Classification
15
15
70
70
P
Pch
16
16
74
74
N
Nch
20
20
75
75
22
22
80
80
23
23
82
82
28
28
83
83
32
32
84
84
33
33
88
88
34
34
89
89
35
35
90
90
36
36
100
100
40
40
109
109
48
48
110
110
50
50
160
160
52
52
161
161
55
55
180
180
60
60
VDSS(V)
B
w/ diode
2.5V
03
30
L
w/ diode
4.5V
04
40
H
w/ diode
10V
055
55
D
w/o
4.5V
06
60
U
w/o
10V
075
75
10
100
Package Code
M
MP-25ZK
MP-25K
(TO-220)
N
P
Lead-free, Sn-Bi
AZ
Lead-free*1, Sn-Bi
AT
Lead-free, Sn
AY
Lead-free*1, Matte-Sn
*1: High-melting-point solder excepted
in RoHS is contained internally.
Protection diode/
Source drive voltage
K
A
T
MP-25SK MP-25ZP MP-25ZT
(TO-262) (TO-263) (TO-263-7p)
Taping direction
E1
E2
NP series features:
Super low on-state resistance(Ron)
Low total gate charge(QG)
High current rating
High reliability(Compliant AEC-Q101)
H
S
V
Y
MP-3
MP-3ZK
MP-3ZP
(TO-252)
8pin HSON
6.5 x 10.4
(6.5 x 6.1)
6.5 x 10.4
6 x 5.15
(6.5 x 6.1) (5.4 x 5.15)
10 x 15.25 10 x 29.6 10 x 23.8 10 x 15.25 10 x 14.85 6.5 x 13.7
(10 x 9.15) (10 x 15.9) (10 x 10.1) (10 x 9.15) (10 x 9.15) (6.5 x 5.5)
Renesas NP Series Power MOSFETs
Ex: NP110N04PUK is N channel MOSFET in MP-25ZP package(40V/110A).
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
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F A4 A 3 Q - T1B - A
Paradigm of R1,R2 (KΩ)Combination Code
Lead-free code
R1
R2
R1
R2
10n of R1
Index *1
Package code
F
3pin MM
(2.9 x 2.8 x 1.4)
G
3pin SSP
2
102
3
103
4
104
H
K
3pin PoMM
A
Lead-free, Sn-Bi
A4A
-
10
F4N
22
47
A
R1=0
AZ
Lead-free*4, Sn-Bi
A3M
1
1
F4Z
22
-
10/47
AT
Lead-free, Sn
A3Q
1
10
J3P
3.3
10
L
0.47
AY
Lead-free*4, Matte-Sn
A4L
10
4.7
L2N
0.47
1
M
1
Taping direction
A4M
10
10
L2Q
0.47
4.7
T1B
A4P
10
47
L3M
4.7
4.7
K
N
10/4.7
A
1
P
10/2.2, 47/10
A4Z
10
-
L3N
4.7
10
F
2.2
Q
10
F2Q
0.22
2.2
L3Z
4.7
-
L
4.7
R
47/2.2
F3M
2.2
2.2
L4K
47
10
F3P
2.2
10
L4L
47
22
F3R
2.2
47
L4M
47
47
F4M
22
22
L4Z
47
-
3.3
Z
0
*1: When R1 =0,
it shows R2 value.
Classification & Specification
A4
Small signal NPN (IC=100mA) type A
B1
Semi-power NPN (IC=700mA) type A
4.5 x 4.0
(4.5 x 2.5)
D1
Semi-power NPN (IC=1000mA) type A
3pin USM
D2
Semi-power NPN w/ ZeDi (IC=1000mA) type C
N4
Small signal PNP (IC=-100mA) type B
P1
Semi-power PNP (IC=-700mA) type B
1.6 x 1.6 x 0.75
(1.6 x 0.8 x 0.75)
T2B
R1 Value
J
(2.0 x 2.1 x 0.9)
R2/R1 Ratio
Q1
Semi-power PNP (IC=-2000mA) type B
R1
Semi-power PNP (IC=-1000mA) type B
*4: High-melting-point
solder excepted
in RoHS is contained
internally.
Equivalent Circuit (type)
Type A
B
C
R1
Type B
B
C
Type C
B
R1
R2 E
C
R1
R2
E
R2
E
Renesas transistors with built-in resistor
Ex: FA4A3Q is NPN transistor with built-in resistor in 3pin MM package (IC=100mA , R1=1KΩ, R2=10KΩ)
©2012. Renesas Electronics Corporation, all rights reserved.
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BB 5 05 C ES - TL - E
BB Series
Build in Biasing
Circuit Transistor
Lead-free code
E
Lead-free
Taping direction
TL
Use/Process
5
TR
UHF/VHF Amplifier
Tape pulling direction
Extension for serial number
Package code
M
C
Serial number, Marking
VDS(V)
ID(mA)
Ciss(pF) typ
NF(dB) typ
502
BS
6
20
1.7
1.6@0.9GHz
505
ES
6
20
1.75
1.5@0.9GHz
506
FS
6
30
1.6
1.4@0.9GHz
Renesas BB Series Build-in Biasing Circuit Transistors
Ex: BB505C is Build-in Biasing Circuit MOSFET in CMPAK-4 package.
©2012. Renesas Electronics Corporation, all rights reserved.
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TBB 1005 EM TL - E
TBB Series
Build in Biasing
Trasistor(Twin type)
Lead-free code
E
Package
Lead-free
Taping direction
TL
TR
Tape pulling direction
Extension for serial number
Serial number, Marking
Ratings
VDS(V)
FET1 Characteristics
ID(mA)
Ciss(pF) typ
lyfsl(mS) typ
FET2 Characteristics
NF(dB) typ
Ciss(pF) typ
lyfsl(mS) typ
NF(dB) typ
04
DM
6
30
1.8
26
1.7@0.9GHz
2.7
32
1.2@0.2GHz
05
EM
6
30
1.8
26
1.7@0.9GHz
2.6
25
1.2@0.2GHz
10
KM
6
30
2.1
29
1.1@0.2GHz
2.1
29
1.1@0.2GHz
12
MM
6
30
1.6
32
1.95@0.9GHz
2.7
30
1.95@0.2GHz
16
RM
6
30
2.2
35
1@0.2GHz
2.2
35
1@0.2GHz
Renesas TBB Series (Twin type)
Build in Biasing Circuit Transistors
Ex: TBB1005EM is Twin Build-in Biasing Circuit MOSFET in CMPAK-6 package.
©2012. Renesas Electronics Corporation, all rights reserved.
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CR 08 AS - 12 A - A T14 #B 1 0
CR: Renesas Thyristor
CRD: Renesas Reverse
conduction Thyristor
CAS number
Lead forming,
Packing
IT(AV)(A)
02
0.3
03
0.3
04
0.4
05
08
-
8
400
0.1, 0.3, 0.5
12
600
0.8
16
800
2
2
3
3
5
5
6
6
8
8
12
12
25
25
IGT item
Classification
VDRM(V)
A
B
D
G
UE
ME
Lead-free type
110℃, 125℃
125℃
150℃
150℃
TO-220F(new ver.)
New Chip, (IGT;μA)
New Chip, (IGT;mA)
None
0
Terminal lead-free
1
Completed lead-free
free
Reliability code
A
1 - 30μA
B
20 - 50μA
C
40 -100μA
D
1 - 50μA
F
E
20 - 100μA
G
B
C
Industry
use
Standard
Consumer
use
Standard
Custom
J
Halogen-free
P
For other use
Custom
Package
AS
UPAK
MP-3A
BS
CS
AM BM
CM
LM
MPAK
LDPAK(S)-(1)
TO-92
TO-220AB
TO-220FL
TO-220F
10.2 x 13.0
(10.2 x 10)
5 x 16.5
(5 x 5)
10.5 x 28.5
(10.5 x 16)
10 x 27.5
(10 x 15)
10.5 x 30.5
(10.5 x 17)
4.5 x 4.25 6.6 x 10.4 2.95 x 2.8
(4.5 x 2.5) (6.6 x 6.1) (2.95 x 1.5)
PM
RM
TO-3PFM
15.6 x 40.9
(15.9 x 19.9)
Renesas Thyristors
Ex: Part number CR08AS-12A is Thyristor (0.8A/600V) in UPAK package .
©2012. Renesas Electronics Corporation, all rights reserved.
Note:
Codes shown in gray color are optional.
Go to index page
BCR 16 PM - 12 L A - x A8 # B 0 0
Renesas Triac
IT(RMS)(A)
08
0.8
1
1
2
2
3
3
4
4
5
5
6
6
CAS number
Lead forming,
Packing
Package
VDRM(V)
DS, FS
8
400
UPAK
SOT-223
12
600
14
700, 800
16
800
20
1000
30
1500
6.6 x 7.0
(6.6 x 3.5)
AS, BS
CS
MP-3A
LDPAK(S)-(1)
8
8
10
10
12
12
16
16
20
20
AM, BM
EM
CM
25
25
TO-92
MP-5
(TO-126)
TO-220AB
30
30
40
40
8.5 x 25.0
(8.5 x 12)
10.5 x 28.5
(10.5 x 16)
None
1
Standard
High-sensitivity
1
Completed
lead-free
Others
Commutation characteristics
None, L
B
C
Guaranteed
Non-guaranteed
F
G
5 x 16.5
(5 x 5)
Terminal leadfree
Internal Code
Reliability code
R
6.6 x 10.4
(6.6 x 6.1)
0
IGT item
AS, ES
4.5 x 4.25
(4.5 x 2.5)
Internal Code
10.2 x 13.0
(10.2 x 10)
General Industry &
General consumer
use
Standard
Special consumer
use
Standard
Custom
Custom
Classification
PM
LM
TO-220F TO-220FL
FM, FR
RM
AM
TO-220FP
TO-3PFM
TO-3P
A 125℃, Standard
B 150℃, Standard
C 150℃, Application
specified
D
10.5 x 30.5
(10.5 x 17)
10 x 27.5
(10 x 15)
10.16 x 28.85 15.6 x 40.9 15.6 x 37.9
(10.16 x 15.87) (15.9 x 19.9) (15.9 x 19.9)
E
TO-220F(2)
G TO-220F(new ver.)
H High Commutation
Renesas Triacs
Ex: Part number BCR16PM-12LA is Triac (16A/600V) in TO-220F package.
©2012. Renesas Electronics Corporation, all rights reserved.
J
Next-Gen Chip
K Logic Level
Note:Codes shown in gray color are optional.
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RD 6.8 FM (0) - T1 - AY
Renesas RD
Serise Zener Diode
Lead-free code
Special support
Package
Standard VZ(V)*
2.0
1.9 - 2.2
8.2
7.7 - 8.7
36
34.0 - 38.0
2.2
2.1 - 2.4
9.1
8.5 - 9.6
39
37.0 - 41.0
2.4
2.3 - 2.6
10
9.4 - 10.6
43
40.0 - 45.0
2.7
2.5 - 2.9
11
10.4 - 11.6
47
44.0 - 49.0
3.0
2.8 - 3.2
12
11.4 - 12.6
51
48.0 - 54.0
3.3
3.1 - 3.5
13
12.4 - 14.1
56
53.0 - 60.0
3.6
3.4 - 3.8
15
13.8 - 15.6
62
58.0 - 66.0
3.9
3.7 - 4.1
16
15.3 - 17.1
68
64.0 - 72.0
4.3
4.0 - 4.5
18
16.8 - 19.1
75
70.0 - 79.0
4.7
4.4 - 4.9
20
18.8 - 21.2
82
77.0 - 87.0
5.1
4.8 - 5.4
22
20.8 - 23.3
91
85.0 - 96.0
5.6
5.3 - 6.0
24
22.8 - 25.6
100
94.0 - 106.0
6.2
5.8 - 6.6
27
25.1 - 28.9
110
104.0 - 116.0
6.8
6.4 - 7.2
30
28.0 - 32.0
120
114.0 - 126.0
7.5
7.0 - 7.9
33
31.0 - 35.0
FM
S
200mW
SL
200mW
low noise
UJ
150mW
low noise
UM
150mW
MW
200mW
Dual type
Renesas RD Series Zener Diodes
Ex: RD6.8FM is Zenner diode(VZ=6.8V) in 2pin PoMM package.
Lead-free, Sn-Bi
AZ
Lead-free*1, Sn-Bi
AT
Lead-free, Sn
AY
Lead-free*1, Matte-Sn
*1: High-melting-point solder excepted
in RoHS is contained internally.
FS
*The VZ range are FM,FS,S package products, the SL,UJ,UM & MW packages are little different range.
©2012. Renesas Electronics Corporation, all rights reserved.
1000mW
A
Taping direction
T1
T2
T1B
T2B
Not recommend or EOL
T1
T2
T4
Ammo pack
Box (2000 pcs/box)
Ammo pack
Real (5000pcs/box)
Ammo pack
Box (5000 pcs/box)
Note:
Codes shown in gray color are optional.
Go to index page
NNCD 6.2 (0) LH - T1 - AT
Renesas NNCD Series
ESD Noise-Clipping Diode
Breakdown voltage(V)*
Special
specifications
section number
Lead-free code
Package & products feature
2.0
1.90 - 2.20
10
9.45 - 10.58
DA
2.2
2.10 - 2.40
11
10.40 - 11.60
DT
High ESD, 2-way connection
2.4
2.30 - 2.60
12
11.38 - 12.64
MDT
2.7
2.50 - 2.90
13
12.43 - 14.00
Low capacitance, High ESD,
2-way connection
3.3
3.10 - 3.50
15
13.80 - 15.56
3.6
3.40 - 3.80
16
15.31 - 17.14
3.9
3.70 - 4.10
18
16.89 - 19.06
4.3
4.00 - 4.49
20
18.80 - 21.14
4.7
4.40 - 4.92
22
20.81 - 23.25
5.1
4.82 - 5.39
24
22.86 - 25.66
5.6
5.29 - 5.94
27
25.10 - 28.90
6.2
5.84 - 6.55
30
28.00 - 32.00
6.8
6.44 - 7.17
33
31.00 - 35.00
7.5
7.03 - 7.87
36
34.00 - 38.00
8.2
7.73 - 8.67
39
37.00 - 41.00
9.1
8.53 - 9.58
C
200mW
150mW
High ESD
A
Lead-free, Sn-Bi
AZ
Lead-free*4, SnBi
AT
Lead-free, Sn
AY
Lead-free*4,
Matte-Sn
High ESD
T1
F
MF
200mW
Dual
type
ST
G
LG, RG
Low capacitance, High ESD
High ESD
Note:
Codes shown in gray color
are optional.
*4: High-melting-point solder excepted
in RoHS is contained internally.
Low capacitance
MG
Low capacitance, High ESD
H, PH
High ESD
*The Breaksond voltage range are DA package
LH, RH
products, Others package are little different range.
T1B
High ESD
High ESD, 2-way connection
200mW
Quad
type
T2
Low capacitance
Renesas NNCD Series ESD Noise-Clipping Diodes
Ex: NNCD6.2LH is Quad type ESD Noise-Clipping Diode in 5pin SSP package.
©2012. Renesas Electronics Corporation, all rights reserved.
Go to index page
NSAD 500 S - T1 - A
Renesas NSAD Series
Surge Absorber Diode
Lead-free code
Lead-free, Sn-Bi
AT
Lead-free, Sn
Tapping direction
Package
NSAD Series
500
A
VBO(V) typ.
C(pF) typ.
ESD(kV) min
8
3.5
8
Low capacity ESD surge absorber for 100 to 500
Mbps-class data line ESD noise protection.
F
200mW Dual type
S
150mW Dual type
H
200mW Quad type
T1
T1B
Renesas NSAD Series Surge Absorber Diodes
Ex: NSAD 500S is Dual type Surge Absorber Diode in 3pin SSP package.
©2012. Renesas Electronics Corporation, all rights reserved.
Go to index page
μPD 166 0 10 T1F - E1 - AY
Renesas
Device
Product Series
166
005GR
007T1F
009T1F
010T1F
011TIJ
013TIJ
015GR
017TIF
019TIF
020T1F
021T1F
100GR
101GR
104GS
Lead-free code
Serial No.
Intelligent Power Device
VDSS
(V)
35
28
28
28
28
28
35
28
28
28
28
40
40
100
IL(A)
2
30
30
30
Self limited
Self limited
2
Self limited
Self limited
Self limited
Self limited
Self limited
Self limited
Self limited
RDS(on)
PD(W) Ch
(mΩ)
100
1
1
10
59
1
10
59
1
10
59
1
25
2
2
60
2
2
100
1.5
2
6
1.2
1
13.5
59
1
10
1.2
1
10
1.2
1
160
1.5
1
160
2
2
90
2
2
AZ
Lead-free*1, Sn-Bi
AY
Lead-free*1, Matte-Sn
*1: High-melting-point solder excepted
in RoHS is contained internally.
Taping direction
E1
Drow-out side
E2
Drow-out side
Package
GR
GS
T1F
TiJ
8-pin SOP
20-pin SOP
5-pin TO-252
(MP-3ZK)
12-pin HSSOP
5.35 x 6.0
(5.35 x 4.4)
12.7 x 7.7
(12.7 x 5.6)
6.5 x 9.8
(6.5 x 6.1)
7.8 x 10.3
(6.4 x 7.5)
Type
0
High Side
1
Low Side
Renesas Intelligent Power Device
Ex: μPD166005GR is Single N-channel High Side Intelligent Power Device in 8-pin SOP package.
©2012. Renesas Electronics Corporation, all rights reserved.
Not recommend or EOL
Go to index page
1SS270ATD-EQ / 1SS55-T4-AZ
1 S S 55 - T4 - AZ
Lead-free code
A
Lead-free, Sn-Bi
AZ
Lead-free*1, Sn-Bi
AT
Lead-free, Sn
AY
Lead-free*1, Matte-Sn
*1: High-melting-point solder excepted
in RoHS is contained internally.
Packing Specification
T1
T2
T4
Ammo pack
Box (2000 pcs/box)
Ammo pack
Real (5000pcs/box)
Ammo pack
Box (5000 pcs/box)
Other:
T6 Reel 2500/reel
T7 Box 2500/box
T8 Box 5000/box
21
©2012. Renesas Electronics Corporation, all rights reserved.
Not recommend or EOL
HSM88WATR-EQ
Go to index page
Packing information: go to p24
22
©2012. Renesas Electronics Corporation, all rights reserved.
Not recommend or EOL
RKZ6.8Z4…..KL-1R1Q
Go to index page
Packing information: go to p24
©2012. Renesas Electronics Corporation, all rights reserved.
Not recommend or EOL
HZ/RKZ/1S Packing abbreviation
24
©2012. Renesas Electronics Corporation, all rights reserved.
Go to index page