To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1707 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1707 is N-Channel MOS Field Effect 8 Transistor designed for DC/DC converters and power 5 management applications of notebook computers. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Low on-resistance RDS(on)1 = 10.0 mΩ TYP. (VGS = 10 V, ID = 5.0 A) 0.05 MIN. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 5.37 MAX. 0.8 +0.10 –0.05 • Low Ciss: Ciss = 1400 pF TYP. 6.0 ±0.3 4 0.15 1.8 MAX. RDS(on)3 = 14.0 mΩ TYP. (VGS = 4.0 V, ID = 5.0 A) 1.44 1 RDS(on)2 = 12.5 mΩ TYP. (VGS = 4.5 V, ID = 5.0 A) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1707G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC= 25°C) ID(DC) ±10 A ID(pulse) ±40 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13084EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998 µ PA1707 ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 5.0 A 5.0 13 RDS(on)1 VGS = 10 V, ID = 5.0 A 10.0 13.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 5.0 A 12.5 18 mΩ RDS(on)3 VGS = 4.0 V, ID = 5.0 A 14.0 21 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 1400 pF Output Capacitance Coss VGS = 0 V 450 pF Reverse Transfer Capacitance Crss f = 1 MHz 180 pF Turn-on Delay Time td(on) ID = 5.0 A 20 ns VGS(on) = 10 V 185 ns td(off) VDD = 15 V 65 ns tf RG = 10 Ω 40 ns Total Gate Charge QG ID = 10 A 26 nC Gate to Source Charge QGS VDD = 24 V 4.2 nC Gate to Drain Charge QGD VGS = 10 V 6.5 nC VF(S-D) IF = 10 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 30 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 25 nC Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL RG PG. VGS VGS Wave Form 0 90% 90% ID VGS 0 ID 0 10% 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% D.U.T. 90% IG = 2 mA RL 50 Ω VDD VDD ID 2 VGS(on) 10% tr td(off) td(on) ton tf toff Data Sheet G13084EJ3V0DS PG. µ PA1707 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 100 120 140 160 Mounted on ceramic substrate of 1200mm 2 ×1.7mm 2.4 2.0 1.6 1.2 0.8 0.4 0 20 TA - Ambient Temperature - ˚C ★ 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ) on ( DS d ite ) Lim 0 V =1 ID(pulse) 10 1m s 10 ID(DC) ms 10 0m s DC Po Lim wer ite Dis d sip a 1 Remark 2 tio Mounted on ceramicsubstrate of 1200 mm × 1.7 mm n 0.1 TC = 25˚C 0.01 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A R VGS (at Rth(ch-a) = 62.5˚C/W 100 10 1 0.1 Mounted on ceramic substrate of 1200 mm2 to 1.7 mm Single Pulse Channel to Ambient 0.01 0.001 100 µ 1m 10 m 100 m 1 10 100 1000 10000 PW - Pulse Width - s Data Sheet G13084EJ3V0DS 3 µ PA1707 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed Pulsed 1 TA = 125˚C 75˚C 25˚C −25˚C 0.1 0 VDS = 10 V 3 4 2 1 0 0.4 0.2 0.8 0.6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 TA = −25˚C 25˚C 75˚C 125˚C 1 VDS =10 V Pulsed 1 10 100 ID- Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 20 VDS - Drain to Source Voltage - V 0.1 4 30 VGS - Gate to Source Voltage - V 100 Pulsed 30 20 VGS = 4 V 4.5 V 10 10 V 1 10 100 Pulsed 35 30 25 20 15 ID = 5 A 10 5 5 0 10 15 20 25 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.1 VGS = 10 V 4.5 V 4 V 40 10 RDS(on) - Drain to Source On-state Resistance - mΩ 0.01 |yfs| - Forward Transfer Admittance - S ID - Drain Current - A 10 GATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V ID - Drain Current - A 50 VDS = 10 V ID = 1 mA 2.2 1.8 1.4 1.0 0.6 −40 0 40 80 120 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G13084EJ3V0DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed ID = 5 A VGS = 4.0 V 4.5 V 15 10 V 10 5 0 −40 0 40 80 120 100 10 VGS = 4 V 0.1 0 140 Ciss Coss Crss 100 10 30 100 100 10 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100A /µs VGS = 0 V 1 1.2 1.4 100 td(off) tf td(on) 10 VDS = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 1.0 tr VDS - Drain to Source Voltage - V 1000 0.8 1000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz 1 0.6 SWITCHING CHARACTERISTICS 1000 10 0.1 0.4 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 0.2 Tch - Channel Temperature - ˚C 10000 0V 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 10 A 14 12 30 VDD = 24 V 15 V 6V 20 VGS 10 8 6 4 10 2 0 ID - Drain Current - A 0 4 8 12 16 20 24 28 0 32 QG - Gate Charge - nC Data Sheet G13084EJ3V0DS 5 VGS - Gate to Source Voltage - V 20 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1707 µ PA1707 [MEMO] 6 Data Sheet G13084EJ3V0DS µ PA1707 [MEMO] Data Sheet G13084EJ3V0DS 7 µ PA1707 • The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4