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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC4572 LOW SUPPLY VOLTAGE, ULTRA LOW-NOISE, HIGH SPEED, WIDE BAND, LOW IB DUAL OPERATIONAL AMPLIFIER DESCRIPTION The μ PC4572 is a dual wide band, ultra low noise operational amplifier designed for low supply voltage operation of +4 V to +14 V single supply and ±2 V to ±7 V split supplies. Using high hFE PNP transistors for the input circuit, Input bias current and input equivalent noise are better than conventional wide band operational amplifier. The μ PC4572 is an excellent choice for preamplifiers and active filters in audio, instrumentation, and communication circuit. FEATURES • • • • Ultra low noise: en = 4.0 nV/ Hz Low input bias current: 100 nA High slew rate: 6 V/ μs Low supply voltage: ±2 V to ±7 V (Split) +4 V to +14 V (Single) • Internal frequency compensation <R> PIN CONFIGURATION (Top View) <R> ORDERING INFORMATION Part Number Package μ PC4572C μ PC4572C(5) μ PC4572G2 μ PC4572G2(5) μPC4572C, 4572C(5), 4572G2, 4572G2(5) 8-pin plastic DIP (7.62 mm (300) ) 8-pin plastic DIP (7.62 mm (300) ) 8-pin plastic SOP (5.72 mm (225) ) 8 V+ OUT1 1 1 8-pin plastic SOP (5.72 mm (225) ) − + I I1 2 EQUIVALENT CIRCUIT (1/2 Circuit) I N1 3 V+ V R1 7 OUT2 2 + − 4 − 6 I I2 5 I N2 Q7 Q5 Q14 Q11 Q13 Q8 Q1 II Q16 R7 Q2 Q9 IN R5 C2 R8 R6 R9 Q12 R11 Q15 Q6 Q3 R2 Q4 C1 R3 OUT Q10 R4 R10 Q17 V− The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15972EJ6V0DS00 (6th edition) Date Published December 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1986 μ PC4572 <R> ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter + Voltage between V and V − Note1 Differential Input Voltage Input Voltage Symbol Ratings Unit V+ − V− −0.3 to +15 V ±10 V VID Note2 + V − + V − 0.3 to V + 0.3 VI Note3 − VO V − 0.3 to V + 0.3 V PT 350 mW 440 mW ts 10 sec Operating Ambient Temperature TA −20 to +80 °C Storage Temperature Tstg −55 to +125 °C Output Voltage Package Note4 G2 Package Note5 C Power Dissipation Output Short Circuit Duration Note6 Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage, which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is −5.0 mW/°C when ambient temperature is higher than 55°C. 5. Thermal derating factor is −4.4 mW/°C when ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) − 2 Symbol MIN. TYP. MAX. Unit V± ±2 ±5 ±7 V + +4 +5/ +12 +14 V Supply Voltage (V = GND) V Output Current IO ±10 mA Capacitive Load (AV = +1) CL 100 pF Data Sheet G15972EJ6V0DS μ PC4572 <R> μ PC4572C, μ PC4572G2 ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current TYP. MAX. Unit ±0.3 ±5 mV IIO ±10 ±100 nA IB 100 400 nA 7 mA VIO Note7 Note7 Large Signal Voltage Gain Supply Current Symbol Note8 Conditions MIN. RS ≤ 50 Ω AV RL ≥ 2 kΩ , VO = ±2 V ICC IO = 0 A 10000 100000 4.5 Common Mode Rejection Ratio CMR 70 90 dB Supply Voltage Rejection Ratio SVR 70 85 dB Output Voltage Swing Vom RL ≥ 10 kΩ ±3.3 ±3.7 V RL ≥ 2 kΩ ±3.0 ±3.5 ±3.5 ±4 RL = 0 ±15 ±20 mA AV = +1, RL ≥ 2 kΩ 3.5 6 V/ μs fO = 100 kHz 10 16 MHz Common Mode Input Voltage Range VICM Output Short Circuit Current IO short Slew Rate SR Gain Band Width Product GBW V Unity Gain Frequency funity open loop 9 MHz Phase Margin φunity open loop 60 degree Total Harmonic Distortion THD VO = 1 Vr.m.s., f = 20 Hz to 20 kHz (Fig.1) 0.002 % RIAA (Fig.2) 0.8 μVr.m.s. FLAT+JIS A, RS = 100 Ω (Fig.3) 0.5 Input Equivalent Noise Voltage Input Equivalent Noise Voltage Density Input Equivalent Noise Current Density Vn en in Channel Separation Average VIO Temperature Drift 0.65 fO = 10 Hz 4.5 fO = 1 kHz 4.0 fO = 1 kHz 0.7 f = 20 Hz to 20 kHz 120 dB ±2 μV/°C ΔVIO/ ΔT nV/ Hz pA/ Hz ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V, V− = GND) Parameter Input Offset Voltage Input Offset Current Input Bias Current TYP. MAX. Unit ±0.3 ±5 mV IIO ±10 ±100 nA IB 100 400 nA 6 mA VIO Note7 Note7 Large Signal Voltage Gain Supply Current Symbol Note8 AV RL ≥ 2 kΩ ICC IO = 0 A Common Mode Rejection Ratio CMR Supply Voltage Rejection Ratio SVR Output Voltage (High) VOH Output Voltage (Low) VOL Common Mode Input Voltage Range VICM Slew Rate SR Gain Band Width Product Conditions MIN. RS ≤ 50 Ω 8000 80000 4 60 RL ≥ 2 kΩ (RL to 1/2 V+) 75 dB 60 70 dB 3.2 3.5 V + RL ≥ 2 kΩ (RL to 1/2 V ) 1.3 1.5 AV = +1 GBW 1.6 V 3.5 V 4 V/ μs 12 MHz Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 8. This current flows irrespective of the existence of use. Data Sheet G15972EJ6V0DS 3 μ PC4572 <R> μ PC4572C(5), μ PC4572G2(5) ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current TYP. MAX. Unit ±0.3 ±1.5 mV IIO ±10 ±50 nA IB 100 200 nA 5.5 mA VIO Note7 Note7 Large Signal Voltage Gain Supply Current Symbol Note8 AV RL ≥ 2 kΩ, VO = ±2 V ICC IO = 0 A Common Mode Rejection Ratio CMR Supply Voltage Rejection Ratio SVR Output Voltage Swing Vom Common Mode Input Voltage Range VICM Output Short Circuit Current IO short Slew Rate SR Gain Band Width Product Conditions GBW MIN. RS ≤ 50 Ω 30000 100000 4.5 75 90 dB 70 85 dB RL ≥ 10 kΩ ±3.45 ±3.7 V RL ≥ 2 kΩ ±3.3 ±3.5 +3.8 −3.7 ±4 V RL = 0 ±15 ±20 mA AV = +1, RL ≥ 2 kΩ 3.5 6 V/ μs fO = 100 kHz 10 16 MHz Unity Gain Frequency funity open loop 9 MHz Phase Margin φunity open loop 60 degree Total Harmonic Distortion THD VO = 1 Vr.m.s., f = 20 Hz to 20 kHz (Figure1) Input Equivalent Noise Voltage Vn RIAA (Figure2) 0.8 FLAT+JIS A, RS = 100 Ω (Figure3) 0.5 Input Equivalent Noise Voltage Density en fO = 10 Hz 4.5 Input Equivalent Noise Current Density in Channel Separation Average VIO Temperature Drift % 0.002 μVr.m.s. 0.65 nV/ Hz fO = 1 kHz 4.0 fO = 1 kHz 0.7 f = 20 Hz to 20 kHz 120 dB ±2 μV/°C ΔVIO/ ΔT pA/ Hz ELECTRICAL CHARACTERISTICS (TA = 25°C, V+ = +5 V, V− = GND) Parameter Input Offset Voltage Input Offset Current Input Bias Current TYP. MAX. Unit ±0.3 ±1.5 mV IIO ±10 ±50 nA IB 100 200 nA 5 mA VIO Note7 Note7 Large Signal Voltage Gain Supply Current Symbol Note8 AV RL ≥ 2 kΩ , ICC IO = 0 A Common Mode Rejection Ratio CMR Supply Voltage Rejection Ratio SVR Output Voltage (High) VOH Output Voltage (Low) VOL Common Mode Input Voltage Range VICM Slew Rate SR Gain Band Width Product Conditions MIN. RS ≤ 50 Ω 40000 80000 4 65 RL ≥ 2 kΩ (RL to 1/2 V+) 75 dB 60 70 dB 3.4 3.5 V + RL ≥ 2 kΩ (RL to 1/2 V ) 1.3 1.2 AV = +1 GBW 1.45 3.8 Data Sheet G15972EJ6V0DS V 4 V/ μs 12 MHz Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 8. This current flows irrespective of the existence of use. 4 V μ PC4572 MEASUREMENT CIRCUITS Fig. 1 Total Harmonic Distortion Measurement Circuit − VO = 1 Vr.m.s. + 2 kΩ Fig. 2 Noise Measurement Circuit (RIAA) 2400 pF 8200 pF 610 Ω 47 μ F + − 30 kΩ 330 kΩ 2.2 kΩ 33 μ F 56 kΩ + + 1.5 μ F + 40 dB Amp. LPF (fO = 30 kHz) 100 kΩ VO = (36.5 dB + 40 dB) × Vn VO Vn = 76.5 dB Fig. 3 Flat Noize Measurement Circuit (FLAT + JIS A) 10 kΩ − 100 Ω JIS A + VO = 40 dB × Vn VO Vn = 40 dB RS = 100 Ω Data Sheet G15972EJ6V0DS 5 μ PC4572 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) POWER DISSIPATION 600 500 μ PC4572G2 400 200°C/W μ PC4572C 300 200 227°C/W 100 0 OPEN LOOP FREQUENCY RESPONSE 120 AV - Open Loop Voltage Gain - dB PT - Total Power Dissipation - mW <R> 0 V± = ±5 V 100 80 60 40 20 0 20 40 60 80 100 TA - Operating Ambient Temperature - °C 1 INPUT OFFSET VOLTAGE 2 V± = ±5 V each 5 samples data V± = ±5 V 180 1 0.5 0 0.5 −1 160 140 120 100 80 60 40 20 −1.5 0 −20 −2 −20 0 20 40 60 80 TA - Operating Ambient Temperature - °C ±5 ± VO± - Output Voltage - V V = ±5 V RL = 10 kΩ 10 5 0 100 1k 10 k 100 k f - Frequency - Hz 1M 0 20 40 60 80 TA - Operating Ambient Temperature - °C OUTPUT CURRENT LIMIT LARGE SIGNAL FREQUENCY RESPONSE 15 Vom - Output Voltage Swing - Vp-p 100 1 k 10 k 100 k 1 M 10 M f - Frequency - Hz INPUT BIAS CURRENT 200 IB - Input Bias Current - nA VIO - Input Offset Voltage - mV 1.5 10 ±4 ±3 VO+, IO SOURCE ±2 VO−, IO SINK ±1 0 10 M V± = ±5 V 0 10 20 30 40 IO - Output Current - mA SUPPLY CURRENT SUPPLY CURRENT 8 8 ICC - Supply Current - mA ICC - Supply Current - mA V± = ±5 V 6 4 2 0 −20 0 20 40 60 80 6 4 2 0 0 TA - Operating Ambient Temperature - °C 6 Data Sheet G15972EJ6V0DS ±5 V± - Supply Voltage - V ±10 COMMON MODE INPUT VOLTAGE RANGE VOLTAGE FOLLOWER PULSE RESPONSE 5 10 VO - Output Voltage - V VICM - Common Mode Input Voltage Range - V μ PC4572 5 0 −5 −10 ±5 0 V± = ±5 V AV = +1 RL = 2 kΩ 2.5 0 −2.5 −5 ±10 0 2 INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A) 100 V± = ±5 V 10 1 100 1k 10 k 8 INPUT EQUIVALENT NOISE VOLTAGE DENSITY V± = ±5 V RS = 100 Ω 6 4 2 0 10 6 8 en -Input Equivalent Noise Voltage Density - nV/ Hz Vn - Input Equivalent Noise Voltage - μ Vr.m.s. V - Supply Voltage - V 0.1 4 t - Time - μ s ± 100 k 10 RS - Source Resistance - Ω 100 1k 10 k 100 k f - Frequency - Hz TOTAL HARMONIC DISTORTION THD - Total Harmonic Distortion - % 1 V± = ±5 V VO = 3 Vr.m.s. AV = +1 RL = 2 kΩ 0.1 0.01 0.001 0.0001 10 100 1k 10 k 100 k f - Frequency - Hz Data Sheet G15972EJ6V0DS 7 μ PC4572 <R> PACKAGE DRAWINGS (Unit: mm) 8-PIN PLASTIC DIP (7.62mm(300)) 8 5 1 4 A K J L P I C H G B M R F D N M NOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS A B 10.16 MAX. 1.27 MAX. C 2.54 (T.P.) D 0.50±0.10 F 1.4 MIN. G 3.2±0.3 H 0.51 MIN. I J 4.31 MAX. 5.08 MAX. K 7.62 (T.P.) L 6.4 M 0.25 +0.10 −0.05 N 0.25 P 0.9 MIN. R 0∼15° P8C-100-300B,C-2 8 Data Sheet G15972EJ6V0DS μ PC4572 8-PIN PLASTIC SOP (5.72 mm (225)) 8 5 detail of lead end P 4 1 A H F I G J S B C D M L N K S M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1±0.1 F 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 −0.07 L 0.6±0.2 M 0.12 N 0.10 P 3° +7° −3° S8GM-50-225B-6 Data Sheet G15972EJ6V0DS 9 μ PC4572 <R> RECOMMENDED SOLDERING CONDITIONS The μ PC4572 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Type of Surface Mount Device μ PC4572G2, 4572G2(5): 8-pin plastic SOP (5.72 mm (225) ) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230°C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device μ PC4572C, 4572C(5): 8-pin plastic DIP (7.62 mm (300) ) Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. <R> REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNT MANUAL http://www.necel.com/pkg/en/mount/index.html NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212 QUALITY CONTROL SYSTEM- STANDARD LINEAR IC 10 Data Sheet G15972EJ6V0DS μ PC4572 • The information in this document is current as of December, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1