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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1913 is a switching device which can be driven directly by a 2.5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5A) RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5A) 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ORDERING INFORMATION PART NUMBER PACKAGE µPA1913TE SC-95 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID(DC) ±4.5 A ID(pulse) ±18 A PT1 0.2 W PT2 2 W Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Body Diode Gate Gate Protection Diode Source Marking: TE Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13807EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points. © 1998, 1999 µPA1913 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = –10 V, ID = –1 mA –0.5 –1.1 –1.5 V | yfs | VDS = –10 V, ID = –2.5 A 3 8.8 RDS(on)1 VGS = –4.5 V, ID = –2.5 A 44 55 mΩ RDS(on)2 VGS = –4.0 V, ID = –2.5 A 46 58 mΩ RDS(on)3 VGS = –2.7 V, ID = –2.5 A 60 82 mΩ RDS(on)4 VGS = –2.5 V, ID = –2.5 A 66 90 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 700 pF Output Capacitance Coss VGS = 0 V 208 pF Reverse Transfer Capacitance Crss f = 1 MHz 100 pF Turn-on Delay Time td(on) VDD = –10 V 300 ns tr ID = –2.5 A 528 ns VGS(on) = –4.0 V 242 ns tf RG = 10 Ω 698 ns Total Gate Charge QG VDD= –16 V 6.0 nC Gate to Source Charge QGS ID = –4.5 A 2.1 nC Gate to Drain Charge QGD VGS = –4.0 V 2.8 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 4.5 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 4.5 A, VGS = 0 V 32 ns Reverse Recovery Charge Qrr di/dt = 10 A / µs 2.2 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS (−) VGS Wave Form 0 10 % PG. 90 % 90 % ID VGS (−) 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID (−) 2 VGS(on) IG = −2 mA tf toff Data Sheet D13807EJ3V0DS µPA1913 TYPICAL CHARACTERISTICS (TA = 25°C) ! DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 20 ID (pulse) d ite V) im 4.5 )L on = S( RD GS −10 − V (@ ID (DC) PW =1 =1 0 ms PW ms = PW 100 = 5 ms s −1 −0.1 PW Single Pulse Mounted on 250 mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board 0 30 60 120 90 TA - Ambient Temperature - ˚C −0.01 −0.1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A VGS = −10 V −4.5 V −4.0 V −16 −12 −2.5 V −8 −4 −100 VDS = −10 V −10 −1 −0.1 TA = 125˚C 75˚C 25˚C −25˚C −0.01 −0.001 −0.0001 0 0.0 −0.2 −0.6 −0.4 −0.8 −1.0 −0.00001 0 −0.5 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 100 −1.0 0 50 100 −1.5 −2.0 −2.5 −3.0 FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT −1.5 VDS = −10 V ID = −1 mA −0.5 −50 −1.0 VGS - Gate to Sorce Voltage - V VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V −10 TRANSFER CHARACTERISTICS −100 ID - Drain Current - A −20 −1 VDS - Drain to Source Voltage - V 150 VDS = −10V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 −0.01 Tch - Channel Temperature - ˚C −0.1 −1 −10 −100 ID - Drain Current - A Data Sheet D13807EJ3V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.5 V TA = 125˚C 80 75˚C 25˚C 60 −25˚C 40 −0.01 −1 −0.1 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µPA1913 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.7 V TA = 125˚C 80 75˚C 25˚C 60 −25˚C 40 −0.01 TA = 125˚C 75˚C 50 25˚C −25˚C 40 30 −0.01 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ VGS = −4.0 V 60 70 VGS = −4.5 V 60 TA = 125˚C 75˚C 50 25˚C 40 −25˚C 30 −0.01 −4.0 V 60 −4.5 V 40 0 Tch 4 −2.7 V 80 50 100 - Channel Temperature -˚C RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ ID = −2.5 A VGS = −2.5 V −1 −0.1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 −50 −100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A 100 −10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 −1 −0.1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 ID = −2.5 A 100 80 60 40 20 0 150 Data Sheet D13807EJ3V0DS −2 −4 −6 −8 −10 VGS - Gate to Source Voltage - V −12 µPA1913 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0V td(on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 10000 1000 Ciss Coss Crss 100 10 −0.1 −1 −10 1000 tf tr td(on) td(off) 100 VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω 10 −0.1 −100 −1 ID - Drain Current - A VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS −8 VGS - Gate to Source Voltage - V IF - Source to Drain Current - A 100 10 1 0.1 0.6 0.8 1.0 ID = −4.5 A −6 VDD = −16 V −10 V −4 −2 0 0.01 0.4 1.2 0 1 2 3 4 5 6 7 8 9 10 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V ! −10 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - ˚C/W 1000 Without Board 100 Mounted on 250 mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - S Data Sheet D13807EJ3V0DS 5 µPA1913 [MEMO] 6 Data Sheet D13807EJ3V0DS µPA1913 [MEMO] Data Sheet D13807EJ3V0DS 7 µPA1913 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4