uPA503T DS - Renesas Electronics

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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
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“Standard”:
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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA503T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The µPA503T is a mini-mold device provided with
PACKAGE DIMENSIONS
(in millimeters)
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
+0.1
0.32 –0.05
+0.1
0.16 –0.06
0.65 –0.15
• Two source common MOS FET circuits in package
2.8 ± 0.2
the same size as SC-59
• Complement to µPA502T
• Automatic mounting supported
1.5
+0.1
FEATURES
0 to 0.1
0.95
0.95
1.9
0.8
1.1 to 1.4
2.9 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
PIN CONNECTION
(Top view)
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
–50
V
Gate to Source Voltage
VGSS
+16
V
Drain Current (DC)
ID(DC)
–100
mA
ID(pulse)*
–200
mA
Total Power Dissipation
PT
300 (TOTAL)
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Drain Current (pulse)
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
Document No. G11239EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
µPA503T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = –50 V, VGS = 0
–1.0
µA
Gate Leakage Current
IGSS
VGS = +16 V, VDS = 0
+10
µA
–2.5
V
Gate Cut-off Voltage
VGS(off)
VDS = –5.0 V, ID = –1.0 µA
–1.5
Forward Transfer Admittance
| yfs |
VDS = –5.0 V, ID = –10 mA
15
Drain to Source On-State Resistance
RDS(on)1
VGS = –4.0 V, ID = –10 mA
60
100
Ω
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –10 mA
40
60
Ω
VDS = –5.0 V, VGS = 0, f = 1.0 MHz
17
pF
–1.9
mS
Input Capacitance
Ciss
Output Capacitance
Coss
9
pF
Reverse Transfer Capacitance
Crss
1
pF
Turn-On Delay Time
td(on)
VGS(on) = –4.0 V, RG = 10 Ω
45
ns
tr
VDD = –5.0 V, ID = –10 mA
75
ns
25
ns
80
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
RL = 500 Ω
tf
Marking: CA
SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS
(RESISTANCE LOADED)
VGS
DUT
RL
Gate
Voltage
Waveform
10 %
VGS(on)
90 %
VDD
ID
RG
td(on)
tr
td(off)
tf
PG.
Drain
Current
Waveform
0
VGS
10 %
10 %
ID
90 %
τ
τ = 1 µs
Duty cycle ≤ 1 %
2
0
90 %
µPA503T
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
350
PT - Total Power Dissipation - mW
Free air
dT - Derating factor - %
100
80
60
40
20
0
20
40
60
80
100 120
300
250
TO
200
TA
ro
150
50
140 160
0
25
–8 V
125
150
–6 V
–10
VGS = –4 V
–40
TA = 150 ˚C
–1
75 ˚C
25 ˚C
–0.1
–25 ˚C
–0.01
–20
–2
–4
–6
–8
–10
–12
–14
–0.001
0
VDS - Drain to Source Voltage - V
–2.0
–1.8
–1.6
–1.4
30
60
90
120
Tch - Channel Temperature - ˚C
150
|yfs| - Forward Transfer Admittance - mS
100
VDS = –5.0 V
ID = –1 µ A
0
–5
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
–2.4
–2.2
VDS = –5.0 V
Pulsed measurement
–10
–15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
100
TRANSFER CHARACTERISTICS
–60
–1.2
–30
75
–100
–80
0
50
TA - Ambient Temperature - ˚C
ID - Drain Current - mA
ID - Drain Current - mA
–100
Pulsed
measurement
un
it
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
–10 V
ne
100
TC - Case Temperature - ˚C
–120
L
Pe
VDS = –5.0 V
50
20
TA = –25 ˚C
10
25 ˚C
5
75 ˚C
150 ˚C
2
1–1
–2
–5
–10
–20
–50
–100
ID - Drain Current - mA
3
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
Pulsed measurement
ID = –1 mA
ID = –10 mA
50
0
–4
–8
–12
–16
–20
RDS(on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-State Resistance - Ω
µPA503T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
150
VGS = –4 V
Pulsed
measurement
TA = 150 ˚C
100
75 ˚C
25 ˚C
50
0
–1
–25 ˚C
–2
–5
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
140
120
100
VGS = –4 V
ID = –10 mA
Pulsed measurement
–50
–100
VGS = 0
f = 1 MHz
50
100
80
60
40
20
Ciss
10
Coss
5
2
1
0.5
Crss
0.2
20
–30
0
30
60
90
120
0.1
0.1
150
tr
200
td(on)
tf
20
–10
–20
–50 –100
10
1
td(off)
10
5
–5
–5
100
VDD = –5.0 V
VGS = –4 V
RG = 10 Ω
100
50
–2
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ID - Drain Current - mA
500
–1
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
–20
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Tch - Channel Temperature - ˚C
–10
–20
–50
–100 –200
ID - Drain Current - mA
4
–10
ID - Drain Current - mA
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - Ω
VGS - Gate to Source Voltage - V
–500
0.1
0.5
0.6
0.7
0.8
0.9
VSD - Source to Drain Voltage - V
1
µPA503T
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
µPA503T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11