To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. HAF2011(L), HAF2011(S) Silicon N Channel MOS FET Series Power Switching REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 4 1 1 2 3 D Gate Resistor G Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 1 of 8 1. Gate 2. Drain 3. Source 4. Drain 2 3 HAF2011(L), HAF2011(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS VGSS ID Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Value 60 16 –2.5 40 80 40 50 150 –55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH Min 3.5 Typ — Max — Unit V VIL IIH1 IIH2 IIL — — — — — — — 3.5 — — — — 0.8 0.35 175 — 1.2 100 50 1 — — — 12 V µA µA µA mA mA °C V IIH (sd) 1 IIH (sd) 2 Tsd VOP REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 2 of 8 Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature HAF2011(L), HAF2011(S) Electrical Characteristics (Ta = 25°C) Item Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss Min 15 — 60 16 –2.5 — — — — — — — 1.0 — — 8 — Typ — — — — — — — — — 0.8 0.35 — — 25 15 16 940 Max — 10 — — — 100 50 1 –100 — — 10 2.25 33 20 — — Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time td (on) tr td (off) tf VDF trr — — — — — — 10.7 66 15.5 19 1 200 — — — — — — µs µs µs µs V ns Over load shut down operation time Note4 tos1 — 1 — ms Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 3 of 8 Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 4 V Note 3 ID = 20 A, VGS = 10 V Note 3 ID = 20 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 20 A VGS = 5 V RL = 1.5 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V HAF2011(L), HAF2011(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) Thermal shut down 200 Operation area 60 Drain Current Channel Dissipation Pch (W) 80 40 20 50 100 150 Case Temperature 10 50 DC 20 200 Drain Current ion 10 m s (T c= 5 s s 25 10 °C ) 20 50 100 50 40 Tc = –25°C 25°C 30 4V 40 = m Typical Transfer Characteristics ID (A) 60 0µ 1 Drain to Source Voltage VDS (V) Drain Current ID (A) 80 at Operation in this area is 2 limited by R DS (on) 1 Tc (°C) Pulse Test 8V 6V 5V 10 V Op er 10 5 Typical Output Characteristics 100 PW 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 0 0 100 VGS = 3.5 V 20 75°C 20 10 VDS = 10 V Pulse Test 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 ID = 20 A 0.3 0.2 10 A 0.1 5A 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 4 of 8 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 50 VGS = 4 V 20 10 V 10 5 2 Pulse Test 1 1 2 5 10 20 Drain Current 50 100 200 ID (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 5 A, 10 A ID = 20 A 0.04 VGS = 4 V ID = 20 A 0.02 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAF2011(L), HAF2011(S) 100 VDS = 10 V Pulse Test 50 Tc = –25°C 20 10 25°C 75°C 5 2 1 0.5 500 500 Switching Time t (µs) Reverse Recovery Time trr (ns) 1000 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 Reverse Drain Current 20 10 20 50 VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % 200 100 tr 50 tf 20 td(off) td(on) 10 0.5 50 IDR (A) 1 2 5 10 Drain Current 20 50 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 50 10000 Pulse Test 40 Capacitance C (pF) Reverse Drain Current IDR (A) 5 Switching Characteristics 1000 10 0.5 2 Drain Current ID (A) Tc (°C) Body-Drain Diode Reverse Recovery Time 20 1 VGS = 5 V 30 0V 20 10 3000 1000 Coss 300 100 30 0 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 5 of 8 0 10 20 30 40 50 Drain to Source Voltage VDS (V) HAF2011(L), HAF2011(S) Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 12 10 VDD = 9 V 8 6 16 V 4 2 0 0.1 1 10 100 200 180 160 140 120 ID = 5 A 100 0 Shutdown Time of Load-Short Test PW (mS) 2 4 6 8 10 VGS (V) Gate to Source Voltage Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c 0.1 0.1 θch – c = 2.5°C/W, Tc = 25°C 0.05 0.03 0.02 1 0.0 1 o sh D= PDM tp uls 0.01 10 µ e PW T PW T 100 µ 1m 100 m 10 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 5V 50 Ω VDD = 30 V 10% 90% td(on) REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 6 of 8 10% tr 90% td(off) tf HAF2011(L), HAF2011(S) Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g (1.5) 10.0 2.54 ± 0.5 REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 7 of 8 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 HAF2011(L), HAF2011(S) Ordering Information Part No. HAF2011-90L HAF2011-90S HAF2011-90STL HAF2011-90STR Quantity Max: 50 pcs/sack Max: 50 pcs/sack 1000 pcs/Reel 1000 pcs/Reel REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 8 of 8 Shipping Container Sack Sack Embossed tape Embossed tape Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. 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