CR5AS-12(MP-3A) Datasheet

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April 1st, 2010
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1.
2.
3.
4.
5.
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7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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“Standard”:
8.
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12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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CR5AS-12
Thyristor
Medium Power Use
REJ03G0345-0300
Rev.3.00
Dec 19, 2008
Features
• Non-Insulated Type
• Glass Passivation Type
• IT (AV) : 5 A
• VDRM : 600 V
• IGT : 100 µA
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
2, 4
3
12
3
1
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
Applications
Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for
autocycle, electric tool, strobe flasher, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 1 of 7
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
CR5AS-12
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Unit
A
A
ITSM
90
A
I2t
33
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
0.26
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Repetitive peak off-state current
IDRM
—
—
2.0
mA
On-state voltage
VTM
—
—
1.8
V
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
—
0.1
—
—
0.8
—
V
V
Gate trigger current
Holding current
IGT
IH
1
—
—
3.5
100Note3
—
µA
mA
Thermal resistance
Rth (j-c)
—
—
3.0
°C/W
Test conditions
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 15 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220 Ω
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 25°C, VD = 12 V,
RGK = 220 Ω
Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special value of IGT is required, IGT from 20 to 100 µA is possible. (IGT item: E)
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 2 of 7
CR5AS-12
Performance Curves
102
7 Tc = 25°C
5
3
2
Rated Surge On-State Current
100
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
7
5
3
2
VFGM = 6V
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
IGT = 100µA IFGM = 0.3A
(Tj = 25°C)
7
VGD = 0.1V
5 -2
10 23 5710-1 23 57 100 23 57 10123 57102 23
20
10
2 3 4 5 7 101
2 3 4 5 7 102
× 100 (%)
103
7
5
3
2
#1
#2
Typical Example
IGT(25°C)
#1
11µA
#2
61µA
102
7
5
3
2
101
7
5
3 V = 6V
2 D
RL = 60Ω
100
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Tj = 25°C
Gate Trigger Voltage (V)
30
Gate Current (mA)
1.0
0.9
0.7
40
Gate Trigger Current vs.
Junction Temperature
–1
0.8
50
Gate Characteristics
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
60
Conduction Time (Cycles at 60Hz)
Distribution
Typical Example
0.6
0.5
0.4
0.3
0.2
0.1
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
7
5
3
2
70
On-State Voltage (V)
102
101
80
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
7
5
3
2
90
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
3
2
Junction to ambient
102
7
5
3
2
101
7
5
3
2
Junction to case
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
CR5AS-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
14
90° 120°
12
60°
10
8
6
θ = 30°
θ
4
360°
2
0
160
180°
Case Temperature (°C)
Average Power Dissipation (W)
16
1
2
3
4
5
6
7
Resistive,
inductive loads
100
80
60
40
0
8
θ = 30°
90°
0
1
2
3
180°
120°
4
5
6
7
8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
40
60°
90°
120°
20
180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ambient Temperature (°C)
160
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
θ = 30°
60°
90°
20
120°
180°
0
0
2
1
Aluminum Board
80×80×t2.3
40
3
4
5
6
8
7
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
16
160
14
140
θ
120
360°
Resistive loads
θ
12
θ
Case Temperature (°C)
Ambient Temperature (°C)
360°
60°
160
Average Power Dissipation (W)
θ
120
20
Resistive,
inductive loads
0
140
180°
360°
10 Resistive
loads
8
90°
θ = 30° 60°
120°
6
4
2
0
100
80
60
40
θ = 30°
20
0
1
2
3
4
5
6
7
Average On-State Current (A)
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 4 of 7
8
θ
0
0
1
2
60° 90° 120° 180°
3
4
5
6
7
Average On-State Current (A)
8
CR5AS-12
160
140
140
θ
360°
Resistive loads
Natural convection
100
80
60 θ = 30°
60°
40
90°
120°
20
180°
0
θ
Resistive loads
Natural convection
100
80
θ = 30°
60°
90°
120°
180°
60
40
20
0
1
2
3
4
5
6
7
Average On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
Typical Example
RGK = 220Ω
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
140
θ
360°
Average On-State Current (A)
160
160
Aluminum Board
80×80×t2.3
120
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 220Ω) × 100 (%)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
θ
120
Ambient Temperature (°C)
160
0
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
103
7 Typical Example
5
3
2
102
7
5
3
2
101
7
5
3
2
100
10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7 101
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
Typical Example
8
Tj = 125°C
Junction Temperature (°C)
102
Tj = 125°C
RGK = 220Ω
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 5 of 7
Holding Current (mA)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
7
5
4
3
2
Distribution
Typical Example
101
7
5
4
3
2
100
7
5
4
3 VD = 12V
2
RGK = 220Ω
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
400
Typical Example
IGT(25°C) IH(220Ω)
350
14µA
1.7mA
#1
48µA
2.7mA
300 # 2
Tj = 25°C
250
#1
200
#2
150
100
50
0 -2
10 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101
Gate to Cathode Resistance (kΩ)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
3
2
103
7
5
3
2
#1
#2
102
7
5
V = 6V
3 D
2 RL = 60Ω
Ta = 25°C
101
0
10
2 3 4 5 7 101
Typical Example
IGT(DC)
#1
11µA
#2
61µA
2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 6 of 7
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
× 100 (%)
Holding Current vs.
Gate to Cathode Resistance
× 100 (%)
CR5AS-12
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
CR5AS-12
Package Dimensions
Previous Code

0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZG-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Order Code
Lead form
Surface-mounted type
Surface-mounted type
Standard packing
Taping
Tube
Quantity
3000
75
Standard order code
Type name – T +Direction (1 or 2) +3
Type name
Note : Please confirm the specification about the shipping in detail.
REJ03G0345-0300 Rev.3.00 Dec 19, 2008
Page 7 of 7
Standard order
code example
CR5AS-12-T13
CR5AS-12
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2008. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2