2SH30 - Renesas Electronics

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
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Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
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Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SH30
Silicon N Channel IGBT
High Speed Power Switching
ADE-208-792A(Z)
2nd. Edition
May 1999
Features
• High speed switching
• Low on-voltage
Outline
TO–3P
C
G
E
1
2
3
1. Gate
2. Collector (Flange)
3. Emitter
2SH30
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
VCES
600
V
Gate to Emitter voltage
VGES
±20
V
Collector current
IC
50
A
Collector peak current
ic(peak)
100
A
100
W
Note1
Collector dissipation
PC
Channel temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I CES
—
—
250
µA
VCE = 600V, VGE = 0
Gate to emitter leak current
I GES
—
—
±1
µA
VGE = ± 20 V, VCE = 0
Gate to emitter cutoff voltage VGE(off)
6.0
—
8.0
V
I C = 50 mA, VCE = 10V
Collector to emitter saturation VCE(sat)
voltage
—
2.1
2.6
V
I C = 50 A, VGE = 15V
Input capacitance
Cies
—
2800
—
pF
VCE = 10V, VGE = 0
f = 1MHz
Switching time
tr
—
280
—
ns
I C = 50 A
t on
—
430
—
ns
RL = 6 Ω
tf
—
300
600
ns
VGS = ±15V
t off
—
650
1300
ns
Rg = 50 Ω
2
2SH30
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
er
I C (A)
I C (A)
Collector Current
I C (A)
15 V
2
0.5
0.2
40
200
400
600
800
Collector to Emitter Voltage VCE (V)
12 V
Pulse Test
11 V
10 V
30
20
9V
10
VGE = 8 V
Tc = 25 °C
0
t)
)
Typical Output Characteristics
50
1
ho
3
10
30
100 300 1000
Collector to Emitter Voltage VCE (V)
50
5
1s
°C
25
Reverse Bias SOA
100
0.1
Ta = 25 °C
1
s(
c=
(T
50
100
150
200
Case Temperature Tc (°C)
10
m
10
on
0.1
0.01
20
=
ati
0.3
PW
Collector Current
1
0.03
0
0
Collector Current
s
3
Op
40
s
10
m
80
0µ
DC
Channel Dissipation
120
10
30
1
Pch (W)
160
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
3
2SH30
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Typical Transfer Characteristics
40
30
Tc = 75°C
20
25°C
10
–25°C
0
4
8
12
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Gate to Emitter Voltage
4
Collector to Emitter Saturation Voltage
V CE(sat) (V)
V CE = 10 V
Pulse Test
16
5
3
I C = 50 A
2
25 A
40 A
1
V GE (V)
Collecot to Emitter Saturation Voltage
vs. Collector Current
10
Pulse Test
4
0
20
4
8
12
Gate to Emitter Voltage
16
20
V GE (V)
Typical Capacitance vs.
Collecotor to Emitter Voltage
10000
3000
5
Capacitance C (pF)
Collector Current
I C (A)
50
2
–25°C
1
25°C
0.5
Tc = 75°C
0.2
V GE = 15 V
Pulse Test
0.1
0.1
1
3
0.3
10
30
Collector Current I C (A)
300
100
Coes
30
Cres
10
3
1
100
Cies
1000
VGE = 0
f = 1 MHz
0
10
20
30
40
50
Collector to Emitter Voltage V CE (V)
2SH30
Switching Characteristics
1000
300
16
12
VGE
I C = 50 A
200
V CC = 400 V
300 V
200 V
100
4
VCE
0
8
40
80
120
160
Gate Charge Qg (nc)
Switching Time t (ns)
V CC = 200 V
300 V
400 V
400
V GE (V)
20
Gate to Emitter Voltage
Collector to Emitter Voltage
V CE (V)
Dynamic Input Characteristics
500
500
t d(off)
200
tf
100
50
20
0
200
10
1
Switching Characteristics
10
1
50
5
2
10
20
Collector Current I C (A)
100
Switching Characteristics
tf
tr
t d(on)
I C = 50A, R L= 6 Ω
V GE = ±15 V
100 300 500
3
10
30
Gate Resistance Rg ( Ω )
500
Switching Time t (ns)
Switching Time t (ns)
1000
30
V CC = 300V, V GE = ±15 V
Rg = 50 Ω , Ta = 25°C
tf
t d(off)
100
tr
1000
5000
3000
300
t d(on)
200
100
t d(off)
tr
t d(on)
50
20
10
25
I C = 50A, RL = 6 Ω
V GE = ±15 V, Rg = 50 Ω
50
75
100
Case Temperature Tc (°C)
125
5
2SH30
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
ho
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (S)
Switching Time Test Circuit
1
10
Waveform
90%
10%
0
Vin
Ic Monitor
90%
V CE
Vin Monitor
VCE
Monitor
Rg
10%
RL
td(on)
tr
ton
D.U.T.
90%
V CC
Vin ± 15 V
Ic
10%
td(off)
tf
toff
6
2SH30
Package Dimensions
Unit: mm
5.0 ± 0.3
5.0 max
0.3 typ
1.5 typ
20.1 max
2.0 typ
0.5 typ
16.0 max
14.9 ± 0.2
1.0 typ
φ 3.2 ± 0.2
1.4 max
2.0 typ
1.0 ± 0.2
3.6 typ
5.45 ± 0.2
18.0 ± 0.5
1.6 typ
2.8 typ
0.6 ± 0.2
0.9 typ
1.0 typ
5.45 ± 0.2
Hitachi Code
EIAJ
JEDEC
TO–3P
SC–65
—
7
2SH30
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
8