Preliminary Datasheet RJH60V2BDPE 600V - 12A - IGBT Application: Inverter R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 25 12 50 12 50 63 1.98 1.75 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Page 1 of 9 RJH60V2BDPE Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage V(BR)CES Min 600 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 5.5 — — — — — — — — — — — — — 1.6 2.2 450 37 18 32 5 17 33 15 65 ±1 7.5 2.2 — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 12 A, VGE = 15 V Note3 IC = 25 A, VGE = 15 V Note3 tf Eon Eoff Etotal tsc — — — — 3 75 0.03 0.18 0.21 6 — — — — — ns mJ mJ mJ s FRD forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 2.5 25 0.02 1.2 — — — — V ns C A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Symbol Typ — Max — Unit V Test Conditions IC =10 A, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 12 A VCC = 300 V VGE = 15 V IC = 12 A Rg = 5 Inductive load Tc = 100 C VCC 360 V, VGE = 15 V IF = 12 A Note3 IF = 12 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Page 2 of 9 RJH60V2BDPE Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 30 Collector Current IC (A) Collector Dissipation Pc (W) 80 60 40 20 0 25 50 75 15 10 5 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off Safe Operation Area 80 PW 10 10 0μ = 10 s Collector Current IC (A) 100 μs 1 0.1 0.01 1 60 40 20 Tc = 25°C Single pulse 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 50 Tc = 25°C Pulse Test 50 15 V Collector Current IC (A) Collector Current IC (A) 20 0 0 Collector Current IC (A) 25 40 30 12 V 20 10 V 10 Tc = 150°C Pulse Test 15 V 40 30 12 V 20 10 V 10 VGE = 8 V VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 Preliminary 5 Tc = 25°C Pulse Test 4 3 IC = 25 A 2 12 A 1 8 10 12 14 16 18 20 Collector Current IC (A) 5 Tc = 150°C Pulse Test 4 3 IC = 25 A 2 12 A 1 8 16 18 20 Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Tc = 25°C 150°C 30 20 VCE = 10 V Pulse Test 0 4 0 8 12 16 20 4 VGE = 15 V Pulse Test 3 IC = 25 A 2 12 A 1 0 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) Frequency Characteristics (Typical) 10 10 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test Collector Current IC(RSM) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 14 12 Typical Transfer Characteristics 40 0 −25 10 Gate to Emitter Voltage VGE (V) 50 10 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Satularion Voltage VCE(sat) (V) RJH60V2BDPE 8 0 Collector current wave (Square wave) 6 4 2 Tj = 125°C, Tc = 90°C VCE = 400 V, VGE = 15 V Rg = 5 Ω, duty = 50% 0 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH60V2BDPE Preliminary Switching Characteristics (Typical) (1) 10 Swithing Energy Losses E (mJ) tf 100 td(off) td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 Eoff 0.1 Eon 0.01 1 100 10 1 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 1 1000 VCC = 300 V, VGE = 15 V IC = 12 A, Tc = 150°C tf 100 td(off) td(on) tr Eoff Eon 0.1 VCC = 300 V, VGE = 15 V IC = 12 A, Tc = 150°C 0.01 10 1 10 100 1 1000 Swithing Energy Losses E (mJ) VCC = 300 V, VGE = 15 V IC = 12 A, Rg = 5 Ω tf td(off) td(on) tr 10 25 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 10 Collector Current IC (A) (Inductive load) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 Switching Times t (ns) Switching Characteristics (Typical) (2) 150 1 Eoff Eon 0.1 VCC = 300 V, VGE = 15 V IC =12 A, Rg = 5 Ω 0.01 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH60V2BDPE Preliminary Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Ta = 25°C 1000 Cies 100 Coes 10 Cres 1 0 50 100 150 200 250 800 600 12 400 8 200 0 300 0 10 150 100 Tc = 150°C 25°C 0 40 80 120 160 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 200 0 40 0 50 0.20 VCC = 300 V IF = 17 A 0.16 0.12 Tc = 150°C 0.08 0.04 25°C 0 200 0 Diode Current Slope diF/dt (A/μs) 40 80 120 160 200 Diode Current Slope diF /dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 50 VCC = 300 V IF = 17 A Forward Current IF (A) Reverse Recovery Current Irr (A) 30 Reverse Recovery Charge vs. Diode Current Slope (Typical) VCC = 300 V IF = 17 A 50 20 Gate Charge Qg (nc) Reverse Recovery Time vs. Diode Current Slope (Typical) 250 4 VCC = 300 V IC = 12 A Tc = 25°C VCE Collector to Emitter Voltage VCE (V) 300 16 VGE Gate to Emitter Voltage VGE (V) Capacitance C (pF) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 12 8 Tc = 150°C 4 25°C 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 VGE = 0 V Pulse Test 40 30 Tc = 150°C 20 25°C 10 0 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Preliminary Normalized Transient Thermal Impedance γs (t) RJH60V2BDPE Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C D=1 1 0.5 0.2 0.1 0.1 θj – c(t) = γs (t) • θj – c θj – c = 1.98°C/W, Tc = 25°C 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 3 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 1.75°C/W, Tc = 25°C 0.2 .1 0.3 0 PDM 0.05 0.02 0.01 1 shot pulse 0.1 100 μ R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 1m D= PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH60V2BDPE Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 0.5 Irr 0.9 Irr Page 8 of 9 RJH60V2BDPE Preliminary Package Dimension JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJH60V2BDPE-00#J3 R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Quantity 1000 pcs Shipping Container Taping Page 9 of 9 Notice 1. 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