H5N2517FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0371-0100Z Rev.1.00 May.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-220FN D 1. Gate 2. Drain 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.1.00, May.28.2004, page 1 of 7 Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 20 80 20 80 7 3.0 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C H5N2517FN Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 250 — — 3.0 11 — Typ — — — — 19 0.055 Max — 1 ±0.1 4.0 — 0.072 Unit V µA µA V S Ω Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VDS = 10 V Note4 ID = 10 A, VGS = 10 VNote4 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 2200 320 40 35 70 110 55 56 13 26 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V VGS = 10 V ID = 20 A Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test VDF trr Qrr — — — 0.9 160 0.9 1.5 — — V ns µC IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/dt = 100 A/µs Rev.1.00, May.28.2004, page 2 of 7 ID = 10 A VGS = 10 V RL = 12.5 Ω Rg = 10 Ω H5N2517FN Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 30 20 10 ID (A) 300 100 Drain Current Channel Dissipation Pch (W) 40 10 30 DC 50 100 Case Temperature 150 200 Tc (°C) m s( at ion 1s 0.3 Operation in ho (T c= 1 t) 25 °C ) this area is 0.1 limited by RDS(on) Ta = 25°C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 100 Pulse Test 100 10 V 7V 60 40 6V 20 ID (A) 8V 80 Drain Current ID (A) Op er 3 0.03 0 Drain Current 1 10 0 µs 0 = 1 m µs 10 s PW VDS = 10 V Pulse Test 80 60 40 20 Tc = 75°C VGS = 5 V 0 4 8 12 Drain to Source Voltage 0 16 20 VDS (V) Drain to Source Saturation Voltage VDS(on) (V) 5 Pulse Test 4 3 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 25°C –25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V 0.1 0.05 2 I D = 20 A 1 0 17.5 A 10 A 0.02 0.01 12 4 8 Gate to Source Voltage Rev.1.00, May.28.2004, page 3 of 7 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.200 Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) H5N2517FN V GS = 10 V 0.160 I D = 20 A 0.120 17.5 A 0.080 10 A 0.040 0 –40 0 40 80 120 Case Temperature Tc (°C) 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 V DS = 10 V Pulse Test 0.5 0.2 0.2 160 0.5 1 Body-Drain Diode Reverse Recovery Time Capacitance C (pF) Reverse Recovery Time trr (ns) 50 20 10 0.1 VGS = 0 f = 1 MHz 2000 1000 500 Coss 200 100 50 di / dt = 100 A / µs V GS = 0, Ta = 25°C Crss 20 10 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 0 20 40 60 Drain to Source Voltage V DS = 50 V 100 V 200 V VGS 300 16 12 VDD 8 V DS = 200 V 100 V 50 V 20 40 Gate Charge Rev.1.00, May.28.2004, page 4 of 7 60 80 Qg (nC) 4 0 100 80 100 VDS (V) Switching Characteristics 10000 Switching Time t (ns) I D = 20 A Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS (V) Dynamic Input Characteristics 0 ID (A) 50 100 Ciss 100 100 Drain Current 5000 200 200 10 20 10000 500 400 5 Typical Capacitance vs. Drain to Source Voltage 1000 500 2 V GS = 10 V, V DD = 125 V PW = 5 µs, duty < 1 % R G =10 Ω 1000 tf tr t d(off) 100 tf t d(on) 10 0.1 tr 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2517FN Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage V GS(off) (V) Reverse Drain Current IDR (A) 100 80 60 V GS = 0 V 40 20 10 V 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 V DS = 10 V 4 I D = 10mA 3 1mA 0.1mA 2 1 0 -50 2.0 0 50 100 Case Temperature VSD (V) 150 200 Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 1 0.0 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C ho tp ul se 0.01 PDM 1s Normalized Transient Thermal Impedance γ s (t) 1 D= 0.003 PW T PW T 0.001 10 µ 100 µ 1m 10 m Pulse Width Rev.1.00, May.28.2004, page 5 of 7 100 m PW (s) 1 10 H5N2517FN Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 125 V Vout 10% 10% 90% td(on) Rev.1.00, May.28.2004, page 6 of 7 tr 10% 90% td(off) tf H5N2517FN Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 φ3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 3 ± 0.3 6.5 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.6 ± 0.2 4.5 ± 0.2 2.54 ± 0.25 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Ordering Information Part Name Quantity Shipping Container H5N2517FN-E 50 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, May.28.2004, page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0