42-DL213B - Silicon Touch Technology Inc.

42-DL213B
Version
Issue Date
File Name
Total Pages
: A.005
: 2012/02/13
: SP-DL213B-A.005.doc
:6
Optical Fiber Transmitting IC
新竹市科學園區展業一路 9 號 7 樓之 1
SILICON TOUCH TECHNOLOGY INC.
9-7F-1, Prosperity Road I, Science Based Industrial Park,
Hsin-Chu, Taiwan 300, R.O.C.
Tel:886-3-5645656
Fax:886-3-5645626
42-DL213B
42-DL213B
OPTICAL FIBER TRANSMITTING IC
GENERAL DESCRIPTION
42-DL213B is a driver IC designed for the application of high-speed optical fiber
transmission. It integrates the LED driver with constant current output to reduce the complexity
and the cost of the transmission module. 42-DL213B can transmit with the speed up to 25Mb/s.
42-DL213B are fabricated by using CMOS technology with low power consumption purpose.
FEATURES
1. TTL interface compatible
2. High speed (up to 25Mb/s)
3. Uniform output waveform
4. Constant current output
5. Low power consumption
6. Wide range for Supply Voltage (2.7V-5.5V)
BLOCK DIAGRAM And APPLICATION CIRCUIT
Power
42-DL213B
OUT
VDD
IN
Signal
VSS
Ground
Optical Fiber Transmitting IC
Version:A.005
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Page 1
42-DL213B
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Unit
Supply Voltage
VDD
-0.5 to +7
V
Input Voltage
VIN
-0.5 to VDD +0.5
V
Operating Temperature
Topr
-40 to +85
℃
Storage Temperature
Tstg
-55 to +100
℃
Electrostatic Damage
ESD
6.5
kV
Output Sinking Current
IOUT
50
mA
RECOMMENDED OPERATING CONDITIONS
ITEM
SYMBOL
MIN.
TYP.
MAX. UNIT
Supply Voltage
VDD
2.7
-
5.5
V
High Level Input Voltage
VIH
2.0
-
VDD
V
Low Level Input Voltage
VIL
0
-
0.8
V
ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25℃, if not mentioned )
ITEM
SYMBOL
High Level Input Voltage
Low Level Input Voltage
VIH
VIL
VDD= 3V or 5V
VDD= 3V or 5V
2.0
0
-
VDD
0.8
V
V
Input Leakage Current
IIN
VIN=VDD or VSS
-
-
8.5
uA
IDDQ
VIN = VDD or VSS
VDD=3V or 5V,
VIN=VDD,
VFLED=2.0V
VDD=3V or 5V,
VOUT=3V,
VIN=VSS
VDD=3V,
CLED=15pF,
VFLED=2.0V
VDD=3 V,
CLED=15pF,
VFLED=2.0V
CLED=15pF,
VFLED=2.0V
CLED=15pF,
VFLED=2.0V
NRZ Code,
CLED=15pF,
VFLED=2.0V
-
5.4
-
mA
3.5
4.4
5.3
mA
-
-
5
uA
-
-
100
ns
-
-
10
ns
- 10
0
10
ns
1
25
ns
-
25
Mb/s
Quiescent Supply Current
Output Sinking Current
IOUT_ON
Output Leakage Current
IOUT_OFF
Propagation Delay
CONDITIONS MIN. TYP. MAX. UNIT
TPLH , TPHL
Rise Time, Fall Time of
IOUT
Tr, Tf
Pulse Width Distortion
Δtw
Jitter of Output Current
Δtj
Data Rate
FDATA
-
Note1:IOUT = IOUT_OFF when Vin=5V, VDD=floating.
Optical Fiber Transmitting IC
Version:A.005
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Unauthorized reproduction, duplication, use or disclosure of this document will be deemed as infringement.
Page 2
42-DL213B
PAD DESCRIPTIONS
PAD NO.
PAD NAME
DESCRIPTIONS
1
2
3
4
IN
VDD
OUT
VSS
Input Pad(High Active)
Supply Voltage
Output Pad Sinking Current(Active Low)
Ground
DIE CONFIGURATION
(387.1, 422.5)
1.
2. VDD
IN
Center (248.9, 336.5)
Center (66, 273.7)
Center (321.2, 66)
3. OUT
4. VSS
Center (76.2, 73.7)
Unit:um
(0, 0)
Die Size: 387.1um * 422.5um
Die Thickness: 15mil(=381um)
Pad Size: 90um * 90um
* Note: SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical characteristics
and pad layouts.
Optical Fiber Transmitting IC
Version:A.005
未經授權而逕予重製、複製、使用或公開本文件,行為人得被追究侵權之相關民刑事責任
Unauthorized reproduction, duplication, use or disclosure of this document will be deemed as infringement.
Page 3
42-DL213B
REQUIREMENTS FOR WAFER DELIVERY
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 15 mils(≒381um)
Malfunctioned die:Marked with red ink or equivalent marking
HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION
(1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during
moving, storing and processing 42-DL213B.
(2) Process 42-DL213B in a clean room with proper temperature and humidity.
(3) Ground all working machines and workers wear anti-electrostatic ring to ground during
processing.
(4) Avoid contact 42-DL213Bwith bare hands .If unavoided, wear anti-electrostatic ring and use
anti-electrostatic tool to pick it up.
GUARANTED TEMPERATURE AND RETENTION CYCLE
(1) The device/wafer 42-DL213B should be stored in the nitrogenous chest. The conditions
suggested are as follows:
Temperature = 23±3℃
Relative Humidity = 50±10%
Minimum nitrogen inflow = 3 liters/minute
(2) If the device/wafer, 42-DL213B is incidentally exposed to the air, use it for manufacturing as
soon as possible.
(3) Under the storage environment specified in item (1), six-month safe storage period is
guaranteed.
Optical Fiber Transmitting IC
Version:A.005
未經授權而逕予重製、複製、使用或公開本文件,行為人得被追究侵權之相關民刑事責任
Unauthorized reproduction, duplication, use or disclosure of this document will be deemed as infringement.
Page 4
42-DL213B
The products listed herein are designed for ordinary electronic applications, such
as electrical appliances, audio-visual equipment, communications devices and so
on. Hence, it is advisable that the devices should not be used in medical
instruments, surgical implants, aerospace machinery, nuclear power control
systems, disaster/crime-prevention equipment and the like. Misusing those
products may directly or indirectly endanger human life, or cause injury and
property loss.
Silicon Touch Technology, Inc. will not take any responsibilities regarding the
misusage of the products mentioned above. Anyone who purchases any
products described herein with the above-mentioned intention or with such
misused applications should accept full responsibility and indemnify. Silicon
Touch Technology, Inc. and its distributors and all their officers and employees
shall defend jointly and severally against any and all claims and litigation and all
damages, cost and expenses associated with such intention and manipulation.
Silicon Touch Technology, Inc. reserve the right to make changes to their
products or to discontinue any product or service without notice, and advise
customers to obtain the latest version of relevant information to verify, before
placing orders, that information being relied on is current and complete.
Optical Fiber Transmitting IC
Version:A.005
未經授權而逕予重製、複製、使用或公開本文件,行為人得被追究侵權之相關民刑事責任
Unauthorized reproduction, duplication, use or disclosure of this document will be deemed as infringement.
Page 5