TIP120 TO-220 DARLING TRANSISTOR (NPN) FEATURES * Power application TO-220 .114 (2.89) .102 (2.59) MECHANICAL DATA * * * * .184 (4.67) .155 (3.94) .147 (3.74) .406 (10.31) .394 (10.01) .176 (4.47) .054 (1.37) .046 (1.17) Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any .012 (0.30) .000 (0.00) .491 (12.46) .475 (12.06) .350 (8.90) .335 (8.50) .156 (3.96) .140 (3.56) .543 (13.8) .054 (1.37) .046 (1.17) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS O Ratings at 25 C ambient temperature unless otherwise specified. .528 (13.4) .036 (0.91) .028 (0.71) .021 (0.53) .100 (25.4) TYP .012 (0.31) .111 (2.82) .099 (2.52) .204 (5.18) .196 (4.98) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) SYMBOL LIMITS UNITS Collector-Base voltage RATINGS VCBO 60 V Collector-Emitter voltage VCEO 60 V Emitter-Base voltage VEBO 5 V IC 5 A W Collector current-continutious Collector Power dissipation Thermal Resistance Storage temperature Pd 2 RqJA 62.5 RqJC 1.92 Tstg -65 ~150 o C/W o C o ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL MIN MAX Collector-base breakdown voltage (IC= 1mA, IE= 0) V(BR)CBO 60 - Collector-Emitter breakdown voltage (IC= 30mA, IB= 0) VCEO(SUS) 60 - Collector cut-off current (VCB= 60V ,IE= 0) ICBO - 0.2 mA Collector cut-off current (VCE= 30V ,IB= 0) ICEO - 0.5 mA Emitter cut-off current (VE= -5V,IC= 0) IEBO - 2 mA hFE(1) 1000 - - DC current gain (VCE= 3V,IC= 0.5A) UNITS V hFE(2) 1000 - - Collector-emitter saturation voltage (IC= 3A,IB= 12mA) VCE(sat) - 2 V Collector-emitter saturation voltage (IC= 5A,IB= 20mA) VCE(sat) - 4 V Base-emitter ON voltage (IC= 3A,IB= 12mA) VBE(on) - 2.5 V Cob - 200 DC current gain (VCE= 3V,IO= 3A) Output Capacitance (VCB= 10V,IE= 0, f= 0.1MHz) Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)". pF 2007-3 r(t), TRANSIENT THERMAL RESISTANCE, (NORMALIZED) RATING AND CHARACTERISTICS CURVES (TIP120) 1.0 0.7 D =0.5 0.5 D =0.2 0.3 0.2 0.1 0.07 D =0.1 P(pk) D =0.05 0.05 ZqJC = r(t) RqJC RqJC= 1.92OC/W MAX. D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk)-TC = P(pk) ZqJC(t) D =0.02 0.03 0.02 D =0.01 0.01 0.01 t1 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t2 DUTY CYCLE, D =t1/t2 50 100 200 500 1000 t, TIME, (mS) Figure1 THERMAL RESISTANCE IC, COLLECTOR CURRENT, (A) 20 10 TJ=150OC 100uS 500uS 5.0 There are two limitations on the power handing ability of a transistor average junction temperature and second breakdown.Safe operating aresa curves indicate IC-VCE limits of the transistor that must be observed for reliable operation, i.e.,the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk)=150OC,TC is variable depending on conditions. Second breakdown pulse limit are valid for duty cycles to 10% provided TJ(pk)<150OC.TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. DC 2.0 1mS 1.0 5mS 0.5 BONDING WIRE LIMITED THERMALLY LIMITED @TC=25OC(SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVE APPLY BELOW RATED VCEO 0.2 0.1 0.05 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE, (V) Figure2 ACTIVE-REGION SAFE OPERATING AREA IC= 3.0 Adc 1K 500 300 200 100 50 30 20 10 1.0 300 O TC= 25 C VCE= 40 Vdc 5K 3K 2K 2.0 5.0 10 20 50 100 200 f, FREQUENCY, (KHz) 500 1K Figure3 Small-Signal Current Gain C, CAPACITANCE, (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10K O TJ= 25 C 200 Cob 100 Cjb 70 50 30 0.1 0.2 0.5 1.0 2.0 5.0 10 VR, REVERSE VOLTAGE, (V) 20 Figure4 CAPACITANCE 50 100 20K VCE= 4.0 V O 5K TJ= 150 C 3K 2K O TJ= 25 C O TJ= -55 C 1K 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT, (A) 3.0 O TJ= 25 C IC= 2.0A 4.0A 2.6 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 TJ= 25OC 2.5 2.0 VBE(sat) @ IC/IB =250 VBE @ VCE =4.0V 1.0 0.5 0.1 VCE(sat) @ IC/IB =250 0.2 5.0 7.0 10 20 30 Figure6 COLLECTOR SATURATION REGION 3.0 1.5 6.0A IB, BASE CURRENT, (A) Figure5 DC CURRENT GAIN V, VOLTAGE, (V) hFE, DC CURRENT GAIN 10K VCE, COLLECTOR-EMITTER VOLTAGE, (V) RATING AND CHARACTERISTICS CURVES (TIP120) 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT, (A) Figure7 "ON" VOLTAGES 5.0 7.0 10 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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