RECTRO N SEM ICO NDU CTO R 1N4150 TECHN ICAL SPECIFICATIO N 1N4150 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW /°C (25°C) Forward Current IF 200 mA Junction Temp. Tj -65 to 200 °C Storage Temp. Tstg -65 to 200 °C Dimensions (DO-35 ) DO-35 26 MIN 0.457 DIA. 0.559 4.2 m ax. 2.0 DIA. m ax. Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated Electrical Characteristics (Ta=25°C) Ratings Breakdown Voltage IR= 5.0uA Peak Forward Surge Current PW = 1sec. Maximum Forward Voltage IF= 200mA Maximum Reverse Current VR= 50V VR= 20V, Tj= 150°C Maximum Junction Capacitance VR= 0, f= 1 MHz Max Reverse Recovery Time IF= -IR= 10-200mA, to 0.1 IF RECTRON USA 26 MIN Dim ensions in millim eters Symbol BV IFsurge VF Ratings 50 1.0 Unit V A V 1.0 IR uA 0.10 100 Cj pF 2.5 trr ns 4 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com