ERS404M-B-Z

RECTRON
SEMICONDUCTOR
ERS404M-B-Z
TECHNICAL SPECIFICATION
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE 400 Volts CURRENT 4.0 Ampere
FEATURES
* Ideal for printed circuit board
* Surge overload rating: 150 amperes peak
* Mounting position: Any
MECHANICAL DATA
RS-4M
.122 (3.1)
f.134 (3.4)
.189 (4.8)
.173 (4.4)
.150 (3.8)
.134 (3.4)
(3.7)
(3.3)
(18.0)
(17.0)
.114 (2.9)
.043 (1.1)
.035 (0.9)
.146
.130
.708
.669
.074 (1.9)
.059 (1.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.366 (9.3)
.157 (4)
.057 (1.45)
.041 (1.05)
.087 (2.2)
.069 (1.7)
.602 (15.3)
.578 (14.7)
.995 (25.3)
.983 (24.7)
.382 (9.7)
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.098 (2.5)
.031 (0.8)
.023 (0.6)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
.303 (7.7)
For capacitive load, derate current by 20%.
.287 (7.3)
.303 (7.7)
.287 (7.3)
.303 (7.7)
.287 (7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25oC unless otherwise noted)
SYMBOL
ERS404M
UNITS
Maximum Recurrent Peak Reverse Voltage
RATINGS
VRRM
400
Volts
Maximum RMS Bridge Input Voltage
VRMS
280
Volts
VDC
400
Volts
IO
4.0
Amps
I FSM
150
Amps
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TC = 100o C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance per leg (Note 3)
R θJA
22
RθJC
4.2
0
(Note 2)
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note)
C/ W
TJ
-55 to + 150
0
C
TSTG
-55 to + 150
0
C
CJ
40
pF
SYMBOL
ERS404M
UNITS
VF
1.0
Volts
o
ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridgeat
Element at 2.0A DC
o
Maximum Reverse Current at Rated
@T A = 25 C
Dc Blocking Voltage per element
@T A = 125 o C
Maximum Reverse Recovery Time (Note 4)
IR
trr
NOTES : 1. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2. Unit case mounted on 1.6 x 1.6 x 0.06” thick (4.0 x 4.0 x 0.15cm) Al. Plate
3. Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
4. Test Conditions: IF=0.5A, I R=-1.0A, IRR=-0.25A.
5. Pb free for leads.
5.0
uAmps
0.5
mAmps
35
nSec
2004-3
PEAK FORWARD SURGE CURRENT, (A)
FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
300
250
8.3ms Single Half Sine-Wave
(JEDEC Method)
200
150
100
50
0
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
AVERAGE FORWARD OUTPUT CURRENT, (A)
RATING AND CHARACTERISTIC CURVES ( ERS404M-Z )
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
5
4
3
2
60 Hz RESISTIVE OR
INDUCTIVE LOAD
1
0
0
150
)
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
10
100
INSTANTANEOUS REVERSE
INSTANTANEOUS FORWARD CURRENT, (A)
50
100
CASE TEMPERATURE, (
TJ = 25
10
Pulse Width = 300us
1% Duty Cycle
1
.1
.6
TJ = 100
1.0
.1
TJ = 25
.01
.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
20
40
60
80
100
120
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
25 Vdc
(approx)
(-)
(-)
D.U.T
PULSE
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
1cm
SET TIME BASE FOR
10 ns/cm
RECTRON