EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A !External dimensions (Units : mm) !Features 1) Two DTA144Ys in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMB9 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions ROHM : EMT6 0to0.1 2.0 Abbreviated symbol : B9 IMB9A (1) (2) 1.6 R2=47kΩ (1) Symbol Limits Unit Supply voltage VCC −50 V Input voltage VIN −40 6 Output current IO −70 IC (Max.) −100 150 (TOTAL) 0.8 Abbreviated symbol : B9 V mA EMB9, UMB9N Power dissipation IMB9A Pd Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C mW 300 (TOTAL) ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Absolute maximum ratings (Ta = 25°C) Parameter 0to0.1 0.3to0.6 1.1 2.8 0.15 (6) (5) R1=10kΩ R2 R1 (3) (2) (3) DTr2 0.95 0.95 1.9 2.9 (6) 0.3 DTr1 DTr1 DTr2 IMB9A (4) (5) (6) R1 R2 (3) (2) (1) R1 R2 (4) EMB9 / UMB9N R2 R1 (4) (5) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 !Equivalent circuit R2=47kΩ 0.7 0.15 0.1Min. 0.9 2.1 The following characteristics apply to both DTr1 and DTr2. R1=10kΩ 1.3 (3) (2) (1) 1.25 0.65 (6) (5) 0.2 (4) UMB9N 0.65 Abbreviated symbol : B9 !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) ∗1 ∗2 EMB9 / UMB9N / IMB9A Transistors !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.3 VI (on) −1.4 − − VO (on) − −0.1 −0.3 V Input voltage Output voltage Conditions VCC=−5V, IO=−100µA V VO=−0.3V, IO=−1mA IO/II=−5mA/−0.25mA VI=−5V II − − −0.88 mA IO (off) − − −0.5 µA VCC=−50V, VI=0V GI 68 − − − VO=−5V, IO=−5mA Input current Output current Unit DC current gain Transition frequency fT − 250 − MHz VCE=−10mA, IE=5mA, f=100MHz Input resistance R1 7 10 13 kΩ − Resistance ratio R2 / R 1 3.7 4.7 5.7 − − ∗ ∗ Transition frequency of the device !Packaging specifications Package Type Taping Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMB9 UMB9N IMB9A !Electrical characteristic curves −100 −10m VO=−0.3V 1k VCC=−5V −5m −50 500 −20 −2 Ta=100˚C 25˚C −40˚C −200µ Ta=−40˚C 25˚C 100˚C −100µ −1 −500m −200m −50µ −20µ −10µ −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) −1000m lO/lI =20 −500m Ta=100˚C 25˚C −40˚C −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 200 VO=−5V Ta=100˚C 25˚C −40˚C 100 50 20 10 5 −5µ 2 −2µ −100m −100µ −200µ −500µ −1m OUTPUT VOLTAGE : VO (on) (V) −1m −500µ −10 −5 DC CURRENT GAIN : GI OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −2m −1µ 1 0 −0.5 −1 −1.5 −2 −2.5 −3 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current