Data Sheet μPD5750T7D SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 DESCRIPTION The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the high reception sensitivity and low power consumption. The package is a 6-pin WLBGA (Wafer Level Ball Grid Array) (T7D) suitable for surface mount. This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics. FEATURES • Low voltage operation • Low mode control voltage • Low current consumption • • • • • : VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5 dB TYP. @VCC = 1.8 V, f = 770 MHz Low insertion loss : Lins = 1.2 dB TYP. @VCC = 1.8 V, f = 470 MHz (Bypass-mode) : Lins = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High-density surface mounting : 6-pin WLBGA (0.73 × 0.48 × 0.26 mm) Included protection circuit for ESD APPLICATIONS • Low noise amplifier for the portable and mobile digital TV system, etc. ORDERING INFORMATION Part Number μPD5750T7D-E4A Order Number Package μPD5750T7D-E4A-A 6-pin WLBGA Marking Supplying Form A • Embossed tape 8 mm wide • Pin A3, B3 face the perforation side of the tape • Qty 10 kpcs/reel (T7D) (Pb-Free) Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5750T7D CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 1 of 14 μPD5750T7D PIN CONNECTIONS AND MARKING (Top View) (Bottom View) B3 B3 A3 A2 B2 B2 A2 B1 B1 A1 A1 A A3 Pin No A1 A2 A3 B1 B2 B3 Pin Name INPUT GND1 OUTPUT Vcont GND2 VCC INTERNAL BLOCK DIAGRAM A1 A2 A3 B2 B3 Controller B1 TRUTH TABLE Vcont Gain Mode H High LNA-mode L Low Remark “H” = Vcont (H), “L” = Vcont (L) Bypass-mode ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VCC 3.6 V Mode Control Voltage Vcont 3.6 V Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +30 dBm RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Supply Voltage Symbol MIN. TYP. MAX. Unit VCC 1.6 1.8 2.0 V Mode Control Voltage (H) Vcont (H) 1.0 － VCC V Mode Control Voltage (L) Vcont (L) 0 － 0.4 V Operating Frequency f 50 － 1 800 MHz Operating Ambient Temperature TA −40 － +85 °C Input Power (LNA-mode) Pin － － +7 dBm Input Power (Bypass-mode) Pin － － +15 dBm R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 2 of 14 μPD5750T7D ELECTRICAL CHARACTERISTICS 1 (DC Characteristics) (TA = +25°C, VCC = 1.8 V, unless otherwise specified) Parameter Circuit Current 1 Circuit Current 2 Mode Control Current 1 Mode Control Current 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICC1 ICC2 Icont1 Icont2 Vcont = 1.8 V, No Signal (LNA-mode) Vcont = 0 V, No Signal (Bypass-mode) Vcont = 1.8 V, No Signal (LNA-mode) Vcont = 0 V, No Signal (Bypass-mode) 1.6 – – – 3.1 – 20 – 4.5 1 30 1 mA μA μA μA MAX. 16.5 Unit dB 15.5 dB 2.0 dB 2.0 dB – dB ELECTRICAL CHARACTERISTICS 2 (LNA-mode) (TA = +25°C, VCC = Vcont = 1.8 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Power Gain 1 Symbol GP1 Test Conditions MIN. TYP. f = 470 MHz, Pin = –30 dBm, excluded 10.5 13.5 PCB and connector losses Note 1 f = 770 MHz, Pin = –30 dBm, excluded Power Gain 2 GP2 9.5 12.5 PCB and connector losses Note 1 f = 470 MHz, excluded PCB and Noise Figure 1 NF1 – 1.5 connector losses Note 2 f = 770 MHz, excluded PCB and Noise Figure 2 NF2 – 1.4 connector losses Note 2 6.5 8.5 Output Return Loss 1 RLout1 f = 470 MHz, Pin = –30 dBm Output Return Loss 2 RLout2 f = 770 MHz, Pin = –30 dBm 6.0 8.0 f1 = 470 MHz, f2 = 471 MHz, Input 3rd Order Intercept Point 1 IIP31 –15 –11 Pin = –30 dBm f1 = 770 MHz, f2 = 771 MHz, –12 –8 Input 3rd Order Intercept Point 2 IIP32 Pin = –30 dBm Notes: 1. Input-output PCB and connector losses : 0.20 dB (at 470 MHz), 0.27 dB (at 770 MHz) 2. Input PCB and connector losses : 0.10 dB (at 470 MHz), 0.14 dB (at 770 MHz) – dB – dBm – dBm ELECTRICAL CHARACTERISTICS 3 (Bypass-mode) (TA = +25°C, VCC = 1.8 V, Vcont = 0 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Insertion Loss 1 Insertion Loss 2 Input Return Loss 1 Input Return Loss 2 Output Return Loss 1 Output Return Loss 2 Input 3rd Order Intercept Point Symbol Lins1 Lins2 RLin1 RLin2 RLout1 RLout2 IIP3 Test Conditions f = 470 MHz, Pin = –10 dBm, excluded PCB and connector losses Note f = 770 MHz, Pin = –10 dBm, excluded PCB and connector losses Note f = 470 MHz, Pin = –10 dBm f = 770 MHz, Pin = –10 dBm MIN. TYP. MAX. Unit – 1.2 2.0 dB – 1.4 2.0 dB 10 17 – dB 10 10 14 17 – – dB dB f = 470 MHz, Pin = –10 dBm f = 770 MHz, Pin = –10 dBm 10 f1 = 770 MHz, f2 = 771 MHz, +25 Pin = –2.5 dBm Note: Input-output PCB and connector losses : 0.20 dB (at 470 MHz), 0.27 dB (at 770 MHz) R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 14 – dB +32 – dBm Page 3 of 14 μPD5750T7D STANDARD CHARACTERISTICS FOR REFERENCE 1 (LNA-mode) (TA = +25°C, VCC = Vcont = 1.8 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Symbol ISL1 ISL2 RLin1 RLin2 Zin1 Zin2 PO (1 dB)1 Test Conditions Isolation 1 f = 470 MHz, Pin = –30 dBm Isolation 2 f = 770 MHz, Pin = –30 dBm Input Return Loss 1 f = 470 MHz, Pin = –30 dBm Input Return Loss 2 f = 770 MHz, Pin = –30 dBm Input Impedance 1 f = 470 MHz, Pin = –30 dBm Input Impedance 2 f = 770 MHz, Pin = –30 dBm Gain 1 dB Compression Output f = 470 MHz Power 1 Gain 1 dB Compression Output PO (1 dB)2 f = 770 MHz Power 2 Note: Calibration reference plane : Device edge side Reference Value –30 Unit dB –25 1.7 dB dB 2.5 0.50 – j 2.01 dB Ω 0.36 – j 1.21 –12 Ω dBm –12 dBm Note Note STANDARD CHARACTERISTICS FOR REFERENCE 2 (Bypass-mode) (TA = +25°C, VCC = 1.8 V, Vcont = 0 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Gain 1 dB Compression Output Power Symbol PO (1 dB) Test Conditions f = 770 MHz Reference Value +6 Unit dBm TEST CIRCUIT INPUT A1 A2 Vcont OUTPUT A3 10 000 pF 10 000 pF B1 B2 VCC B3 1 000 pF R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 4 of 14 μPD5750T7D TYPICAL CHARACTERISTICS 1 (DC Characteristics) (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 12 12 VCC = Vcont RF = off 10 10 Circuit Current ICC (mA) Circuit Current ICC (mA) –40°C +25°C 8 6 TA = +85°C 4 VCC = Vcont RF = off 1.8 V 4 0 1 2 3 Supply Voltage VCC (V) 1.6 V 0 –50 4 60 60 Mode Control Current Icont (μA) TA = +85°C 50 +25°C 40 30 –40°C 20 10 VCC = Vcont RF = off 0 0 1 2 3 Supply Voltage VCC (V) 40 VCC = 2.0 V 6 20 10 Mode Control Current Icont (μA) Circuit Current ICC (mA) 3 +25°C –40°C 1 0.5 1 1.5 2 Mode Control Voltage Vcont (V) 25 0 50 75 100 60 TA = +85°C 0 –25 MODE CONTROL CURRENT vs. MODE CONTROL VOLTAGE 5 0 1.6 V Operating Ambient Temperature TA (°C) VCC = 1.8 V RF = off 2 1.8 V 30 0 –50 4 VCC = Vcont RF = off 50 CIRCUIT CURRENT vs. MODE CONTROL VOLTAGE 4 25 75 –25 0 50 100 Operating Ambient Temperature TA (°C) MODE CONTROL CURRENT vs. OPERATING AMBIENT TEMPERATURE MODE CONTROL CURRENT vs. SUPPLY VOLTAGE Mode Control Current Icont (μA) VCC = 2.0 V 6 2 2 0 8 2.5 VCC = 1.8 V RF = off 50 40 30 TA = +85°C +25°C 20 10 –40°C 0 0 0.5 1 1.5 2 2.5 Mode Control Voltage Vcont (V) Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 5 of 14 μPD5750T7D TYPICAL CHARACTERISTICS 2 (LNA-mode) (TA = +25°C, unless otherwise specified) NOISE FIGURE vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 3.0 3.0 VCC = Vcont 2.0 TA = +85°C 2.5 VCC = 1.6 V Noise Figure NF (dB) Noise Figure NF (dB) 2.5 1.8 V 1.5 2.0 V 1.0 +25°C 2.0 1.5 1.0 –40°C 0.5 0.5 0 0 VCC = Vcont = 1.8 V 0 500 1 000 1 500 2 000 500 1 000 2 000 NOISE FIGURE vs. SUPPLY VOLTAGE NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE 2.0 1.8 1.8 1.6 Noise Figure NF (dB) f = 470 MHz 770 MHz 1.4 1.2 170 MHz 1.0 f = 470 MHz 1.6 770 MHz 1.4 1.2 170 MHz 1.0 0.8 0.8 VCC = Vcont = 1.8 V VCC = Vcont 0.6 1.5 1.6 1.7 1.8 1.9 2 2.1 0.6 –50 2.2 –25 0 25 50 75 100 Operating Ambient Temperature TA (°C) Supply Voltage VCC (V) POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY 20 20 –40°C VCC = 2.0 V 1.8 V 15 Power Gain GP (dB) Power Gain GP (dB) 1 500 Frequency f (MHz) 2.0 Noise Figure NF (dB) 0 Frequency f (MHz) 10 1.6 V 5 +25°C 15 10 TA = +85°C 5 VCC = Vcont VCC = Vcont = 1.8 V 0 0 500 1 000 1 500 2 000 Frequency f (MHz) 0 0 500 1 000 1 500 2 000 Frequency f (MHz) Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 6 of 14 μPD5750T7D POWER GAIN vs. OPERATING AMBIENT TEMPERATURE POWER GAIN vs. SUPPLY VOLTAGE 20 20 f = 170 MHz 16 14 12 f = 170 MHz 18 470 MHz Power Gain GP (dB) Power Gain GP (dB) 18 770 MHz 10 8 470 MHz 16 14 12 770 MHz 10 8 VCC = Vcont = 1.8 V VCC = Vcont 6 1.5 1.6 1.7 1.8 1.9 2 2.1 6 –50 2.2 –25 0 25 50 100 INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 TA = +85°C VCC = 1.6 V 1.8 V –5 –10 2.0 V VCC = Vcont 0 500 1 000 1 500 +25°C –5 –40°C –10 2 000 VCC = Vcont = 1.8 V 0 500 Frequency f (MHz) 1 000 2 000 OUTPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = Vcont = 1.8 V –5 VCC = 1.6 V Output Return Loss RLout (dB) VCC = Vcont 1.8 V 2.0 V –10 1 500 Frequency f (MHz) OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) 75 Operating Ambient Temperature TA (°C) Input Return Loss RLin (dB) Input Return Loss RLin (dB) Supply Voltage VCC (V) 0 500 1 000 1 500 2 000 Frequency f (MHz) TA = +85°C –5 –40°C +25°C –10 0 500 1 000 1 500 2 000 Frequency f (MHz) Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 7 of 14 μPD5750T7D ISOLATION vs. FREQUENCY 0 –10 –10 VCC = 1.6 V Isolation ISL (dB) Isolation ISL (dB) ISOLATION vs. FREQUENCY 0 1.8 V –20 –30 2.0 V –40 TA = +85°C –30 –40°C –40 VCC = Vcont = 1.8 V VCC = Vcont –50 0 500 1 000 1 500 –50 2 000 0 500 Frequency f (MHz) OUTPUT POWER vs. INPUT POWER VCC = Vcont = 1.8 V f = 470 MHz –30 –20 –10 –10 –20 –30 –40 0 VCC = Vcont = 1.8 V f = 770 MHz –30 Input Power Pin (dBm) Pout –20 IM3 –60 VCC = Vcont = 1.8 V f1 = 470 MHz f2 = 471 MHz –100 –40 –30 –20 –10 0 10 Input Power Pin (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER –80 –20 –10 0 Input Power Pin (dBm) 20 –40 2 000 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Output Power Pout (dBm) –20 0 1 500 0 –10 –30 –40 1 000 Frequency f (MHz) 0 Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) +25°C –20 OUTPUT POWER, IM3 vs. INPUT POWER 20 0 Pout –20 IM3 –40 –60 VCC = Vcont = 1.8 V f1 = 770 MHz f2 = 771 MHz –80 –100 –40 –30 –20 –10 0 10 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 8 of 14 μPD5750T7D S-PARAMETERS 1 (LNA-mode) (TA = +25°C, VCC = Vcont = 1.8 V, Calibration reference plane: Device edge side) S11-FREQUENCY 1 : 170 MHz 2 : 470 MHz 3 : 770 MHz 87 Ω 25 Ω 18 Ω –264 Ω –101 Ω –61 Ω 94 Ω 54 Ω 36 Ω –36 Ω –44 Ω –36 Ω 1 2 3 START : 50 MHz STOP : 2 000 MHz S22-FREQUENCY 1 : 170 MHz 2 : 470 MHz 3 : 770 MHz 1 3 START : 50 MHz 2 STOP : 2 000 MHz Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 9 of 14 μPD5750T7D TYPICAL CHARACTERISTICS 3 (Bypass-mode) (TA = +25°C, unless otherwise specified) INSERTION LOSS vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 0 0 –40°C 1.8 V Insertion Loss Lins (dB) Insertion Loss Lins (dB) VCC = 2.0 V –1 –2 –3 1.6 V –4 +25°C –1 –2 –3 TA = +85°C –4 Vcont = 0 V 0 500 1 000 1 500 –5 2 000 VCC = 1.8 V, Vcont = 0 V 0 500 1 500 2 000 Frequency f (MHz) INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 –5 –5 –10 VCC = 1.6 V –15 –20 1.8 V –25 2.0 V –30 0 –10 TA = +85°C –15 –20 +25°C –25 –40°C Vcont = 0 V 500 1 000 1 500 –30 2 000 0 VCC = 1.8 V, Vcont = 0 V 500 Frequency f (MHz) 1 500 2 000 OUTPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) 0 –5 –10 VCC = 1.6 V –15 –20 1.8 V –25 2.0 V –30 1 000 Frequency f (MHz) OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) 1 000 Frequency f (MHz) Input Return Loss RLin (dB) Input Return Loss RLin (dB) –5 0 –5 –10 TA = +85°C –15 –20 +25°C –25 500 1 000 1 500 2 000 Frequency f (MHz) VCC = 1.8 V, Vcont = 0 V –40°C Vcont = 0 V –30 0 500 1 000 1 500 2 000 Frequency f (MHz) Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 10 of 14 μPD5750T7D OUTPUT POWER vs. INPUT POWER 20 10 10 Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 20 0 –10 –20 0 –10 –20 VCC = 1.8 V, Vcont = 0 V f = 770 MHz VCC = 1.8 V, Vcont = 0 V f = 470 MHz –30 –20 –10 0 10 –30 –20 20 –10 OUTPUT POWER, IM3 vs. INPUT POWER 40 20 0 Pout –20 IM3 –40 –60 –80 –5 VCC = 1.8 V, Vcont = 0 V f1 = 470 MHz, f2 = 471 MHz 0 5 10 15 20 25 0 10 20 Input Power Pin (dBm) 30 35 Input Power Pin (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 40 20 0 Pout –20 –40 IM3 –60 –80 –5 VCC = 1.8 V, Vcont = 0 V f1 = 770 MHz, f2 = 771 MHz 0 5 10 15 20 25 30 35 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 11 of 14 μPD5750T7D S-PARAMETERS 2 (Bypass-mode) (TA = +25°C, VCC = 1.8 V, Vcont = 0 V, Calibration reference plane: Device edge side) S11-FREQUENCY 1 : 170 MHz 2 : 470 MHz 3 : 770 MHz 57 Ω 50 Ω 43 Ω –7 Ω –14 Ω –16 Ω 56 Ω 50 Ω 42 Ω –8 Ω –14 Ω –17 Ω 1 3 2 START : 50 MHz STOP : 2 000 MHz S22-FREQUENCY 1 : 170 MHz 2 : 470 MHz 3 : 770 MHz 1 3 2 START : 50 MHz STOP : 2 000 MHz Remark The graphs indicate nominal characteristics. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 12 of 14 μPD5750T7D PACKAGE DIMENSIONS 6-PIN WLBGA (T7D) (UNIT: mm) (Top View) (Bottom View) B (0.11) 0.25 0.25 0.73±0.03 0.48±0.03 A A (0.11) B 2 1 φ 0.125±0.025 φ 0.015 M S AB 0.26±0.04 0.07±0.03 (Side View) 3 S 0.03 S Remark ( ): Reference value R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 13 of 14 μPD5750T7D NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) Do not supply DC voltage to INPUT pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Condition Symbol IR260 CAUTION Do not use different soldering methods together. R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 Page 14 of 14 μPD5750T7D Data Sheet Revision History Rev. 1.00 Date Feb 24, 2011 Description Summary Page － First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.0