RFJS1506QDK1 1.0kW rGaN-HV™ Synchronous Boost Converter EVB Design Kit The RFJS1506QDK1 EVB Design Kit consists of a fully assembled evaluation board functioning as a synchronous Boost (step-up) converter working in Continuous Conduction Mode (CCM). The typical fast recovery boost diode is replaced with RFMD’s RFJS1506Q GaN SSFET running in synchronous rectiﬁcation mode to further reduce the losses and improve efﬁciency. Key Features ■ ■ ■ ■ ■ ■ High Power: 1000W On-board CCM Control Adj. Switching Freq. (100-500kHz) Protection: OCP Soft Start-up 8x8 PQFN Thermal Solution The purpose of this EVB is to enable users to easily evaluate the rGaN-HV™ surface mount RFJS1506Q power switch packaged in an 8x8 PQFN running as the main switch and also as the boost diode with ultra-low Qrr and demonstrating its power handling and high efﬁciency while operating at high PWM frequencies ranging from 100kHz to 500kHz. This evaluation board consists of two RFJS1506Q in totem-pole conﬁguration with individual isolated gate drivers and an on-board CCM Controller IC and Inductor. Block Diagram rGaN-HV Switch RFJS1506Q Speciﬁcations Parameter Rating Max Output Power 1000W Input Voltage Range 180 VDC to 240 VDC Regulated Output 400V Switching Frequency 150kHz Efﬁciency at 500V 98.8% Efﬁciency at 1kW 99.0% Ordering Information CIN COUT rGaN-HV Switch RFJS1506Q RLOAD PWM Controller NCC3802 Efﬁciency Curve RFJS1506QDKI - $1,250.00 each 1kW Boost EVB Design kit includes 4 extra samples of RFJS1506Q 99.5 99.0 Efficiency % RFJS1506Q 650V, 15A, 85mohm SSFET power switch in 8x8 PQFN package L Vin 98.5 97.5 97 96.5 96 0 200 400 600 800 Watt Out 1000 1200 1400 www.rfmd.com/products/powerconversion/ RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD. These products comply with RFMD’s green packaging standards. RFJS1506Q Package: 8x8mm PQFN rGAN-HV™ 650V SSFET with Ultra-Fast Freewheeling Diode The RFJS1506Q is a 15A, 85mΩ, normally-off sourced switched FET (SSFET) GaN HEMT providing the same insulated gate ease of use as a power MOSFET, but enabling much higher efﬁciency at much higher PWM frequencies. The SSFET uses the bidirectional capability of the GaN HEMT to provide an ultra-fast freewheeling diode function eliminating the need for a separate antiparallel diode. Pin 5 Drain The RFJS1506Q is housed in a small 8x8mm PQFN package optimized for high-voltage applications with creepage distance that meets industry standards for applications up to 650VDC. RFJS1506Q Switching Losses 1506Q Rg=1ohm @>125C 1506Q Rg=1ohm @room ETotal Gate Pin 1 30 Pin 2 Kelvin Source 20 µJ 25 Source Pin 3,4 15 10 5 0 Key Features 0 2 4 6 8 IDoff (A) ■ Advanced High Voltage GaN Technology ■ Normally-off Insulated Gate 10 0.40 ■ 85mΩ Max RDS(on) 7.30 3.60 0.40 ■ 15A ID (cont) ■ Ultra-Low Switching Losses — EON 15μJ — EOFF 10μJ ■ Intrinsic Diode Qrr < 30nC 14 RFJS1506Q Package Footprint ■ 650V BVDS ■ 8x8mm PQFN 12 3.40 5 4.35 4 φ 3 2.75 0.50 Pin 1 0.31 1.00 φ 3.00 2 1 0.08 A ■ Low-Output Capacitance RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD. These products comply with RFMD’s green packaging standards.