1.0kW rGaN-HV™ Synchronous Boost Converter EVB

RFJS1506QDK1
1.0kW rGaN-HV™ Synchronous
Boost Converter EVB Design Kit
The RFJS1506QDK1 EVB Design Kit consists of a fully assembled evaluation
board functioning as a synchronous Boost (step-up) converter working in
Continuous Conduction Mode (CCM). The typical fast recovery boost diode
is replaced with RFMD’s RFJS1506Q GaN SSFET running in synchronous
rectification mode to further reduce the losses and improve efficiency.
Key Features
■
■
■
■
■
■
High Power: 1000W
On-board CCM Control
Adj. Switching Freq. (100-500kHz)
Protection: OCP
Soft Start-up
8x8 PQFN Thermal Solution
The purpose of this EVB is to enable users to easily evaluate the rGaN-HV™
surface mount RFJS1506Q power switch packaged in an 8x8 PQFN running as
the main switch and also as the boost diode with ultra-low Qrr and demonstrating
its power handling and high efficiency while operating at high PWM frequencies
ranging from 100kHz to 500kHz.
This evaluation board consists of two RFJS1506Q in totem-pole configuration with
individual isolated gate drivers and an on-board CCM Controller IC and Inductor.
Block Diagram
rGaN-HV Switch
RFJS1506Q
Specifications
Parameter
Rating
Max Output Power
1000W
Input Voltage Range
180 VDC to 240 VDC
Regulated Output
400V
Switching Frequency
150kHz
Efficiency at 500V
98.8%
Efficiency at 1kW
99.0%
Ordering Information
CIN
COUT
rGaN-HV Switch
RFJS1506Q
RLOAD
PWM Controller
NCC3802
Efficiency Curve
RFJS1506QDKI - $1,250.00 each
1kW Boost EVB Design kit includes
4 extra samples of RFJS1506Q
99.5
99.0
Efficiency %
RFJS1506Q
650V, 15A, 85mohm SSFET power
switch in 8x8 PQFN package
L
Vin
98.5
97.5
97
96.5
96
0
200
400
600
800
Watt Out
1000
1200
1400
www.rfmd.com/products/powerconversion/
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD.
These products comply with
RFMD’s green packaging standards.
RFJS1506Q
Package: 8x8mm PQFN
rGAN-HV™ 650V SSFET with
Ultra-Fast Freewheeling Diode
The RFJS1506Q is a 15A, 85mΩ, normally-off sourced switched FET
(SSFET) GaN HEMT providing the same insulated gate ease of use as a
power MOSFET, but enabling much higher efficiency at much higher PWM
frequencies. The SSFET uses the bidirectional capability of the GaN HEMT
to provide an ultra-fast freewheeling diode function eliminating the need for a
separate antiparallel diode.
Pin 5
Drain
The RFJS1506Q is housed in a small 8x8mm PQFN package optimized for
high-voltage applications with creepage distance that meets industry standards
for applications up to 650VDC.
RFJS1506Q Switching Losses
1506Q Rg=1ohm @>125C
1506Q Rg=1ohm @room
ETotal
Gate
Pin 1
30
Pin 2
Kelvin
Source
20
µJ
25
Source
Pin 3,4
15
10
5
0
Key Features
0
2
4
6
8
IDoff (A)
■ Advanced High Voltage
GaN Technology
■ Normally-off Insulated Gate
10
0.40
■ 85mΩ Max RDS(on)
7.30
3.60
0.40
■ 15A ID (cont)
■ Ultra-Low Switching Losses
— EON 15μJ
— EOFF 10μJ
■ Intrinsic Diode Qrr < 30nC
14
RFJS1506Q Package Footprint
■ 650V BVDS
■ 8x8mm PQFN
12
3.40
5
4.35
4
φ
3
2.75
0.50
Pin 1
0.31
1.00
φ
3.00
2
1
0.08 A
■ Low-Output Capacitance
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD.
These products comply with
RFMD’s green packaging standards.