RFJS3006FDK2 3kW rGaN-HV™ Bridgeless Totem-Pole PFC Design Kit The RFJS3006FDK2 EVB Design Kit consists of a fully assembled evaluation board functioning as a bridgeless Totem-Pole PFC working in Continuous Conduction Mode (CCM). The purpose of this EVB is to enable users to experience the very high >99% efficiency of this simple topology that is enabled by RFMD’s rGaN-HV™ RFJS3006F SSFET. Key Features ■ ■ ■ ■ ■ ■ High Power: 3000W On-board CCM Digital Control 100kHz Switching Frequency Protection: OVP, OCP Soft Start-up High Efficiency Speciﬁcations The very low reverse recovery Qrr of the RFJS3006F combined with ultralow switching losses and an Rds(on) of 45mOhms is a perfect combination of features that makes the Totem-Pole PFC the ultimate cost effective solution for next generation Telecom and Data Center power systems in the 2 – 4kW range. This evaluation board consists of two RFJS3006F switches operating in totem-pole with gate drivers and a pair of low Rds Power MOSFETs used for the line synch rectification. This EVB is a complete reference design with an optimized board layout and includes a digital controller with embedded TP PFC software. Block Diagram Parameter Rating Max Output Power 3000W Input Voltage Range 85 to 265 VAC Regulated Output 400V Switching Frequency 100kHz Maximum Efficiency at 1.4 kW 99.3% Efficiency at 2.8kW 99.0% rGaN-HV Switch RFJS3006F L COUT + - VAC(in) rGaN-HV Switch RFJS3006F Si MOSFET Efﬁciency Curve Vinac = 230V Vo = 400V Freq = 100kHz 99.3% Efficiency RFJS3006F 650V, 30A, 45mohm SSFET power switch in IsoTO247 package RLOAD Digital PWM Controller XMC 1302 Ordering Information RFJS3006FDK2 - $1,250.00 each 3kW Totem-Pole PFC Design kit Includes 4 extra samples of RFJS3006F Si MOSFET 99.2% 99.1% 99.0% 98.9% 0.68 1.05 1.41 1.74 2.10 2.82 Output Power (kW) www.rfmd.com/products/powerconversion/ RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD. These products comply with RFMD’s green packaging standards. RFJS3006F Package: Isolated TO247 rGAN-HV™ 650V SSFET with Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 45mΩ normally-off sourced switched FET (SSFET) GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses the bidirectional capability of the GaN HEMT to provide an ultra-fast freewheeling diode function eliminating the need for a separate antiparallel diode. Eon, Eoff vs Temperature (Rg=16 Ω, Vgs = 0-12V) Pin 1 Drain 60 Eon (uJ), Eoff (uj) 50 Gate Pin 3 Source Pin 2 Eon 40 30 Eoff 20 10 0 0 25 50 Key Features ■ Advanced High Voltage GaN Technology 75 100 125 150 Tj (˚C) Intrinsic Diode Recovery Characteristics (Qrr) ■ Normally-off Insulated Gate ■ 650V BVDS ■ 45mΩ Max RDS(on) Qrr:63.5nC ■ 30A ID (cont) ■ UL Isolated Mounting Tab ■ Ultra-Low Switching Losses — EON 30μJ — EOFF 20μJ ■ Intrinsic Diode Qrr < 60nC No snubber, di/dt=1.16A/ns, Irrp : 7.6A ■ Low-Output Capacitance RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD. These products comply with RFMD’s green packaging standards.