3kW rGaN-HV™ Bridgeless Totem-Pole PFC Design Kit

RFJS3006FDK2
3kW rGaN-HV™ Bridgeless
Totem-Pole PFC Design Kit
The RFJS3006FDK2 EVB Design Kit consists of a fully assembled evaluation board
functioning as a bridgeless Totem-Pole PFC working in Continuous Conduction
Mode (CCM). The purpose of this EVB is to enable users to experience the very
high >99% efficiency of this simple topology that is enabled by RFMD’s rGaN-HV™
RFJS3006F SSFET.
Key Features
■
■
■
■
■
■
High Power: 3000W
On-board CCM Digital Control
100kHz Switching Frequency
Protection: OVP, OCP
Soft Start-up
High Efficiency
Specifications
The very low reverse recovery Qrr of the RFJS3006F combined with ultralow switching losses and an Rds(on) of 45mOhms is a perfect combination of
features that makes the Totem-Pole PFC the ultimate cost effective solution for next
generation Telecom and Data Center power systems in the 2 – 4kW range.
This evaluation board consists of two RFJS3006F switches operating in totem-pole
with gate drivers and a pair of low Rds Power MOSFETs used for the line synch
rectification. This EVB is a complete reference design with an optimized board
layout and includes a digital controller with embedded TP PFC software.
Block Diagram
Parameter
Rating
Max Output Power
3000W
Input Voltage Range
85 to 265 VAC
Regulated Output
400V
Switching Frequency
100kHz
Maximum Efficiency
at 1.4 kW
99.3%
Efficiency at 2.8kW
99.0%
rGaN-HV Switch
RFJS3006F
L
COUT
+
-
VAC(in)
rGaN-HV Switch
RFJS3006F
Si MOSFET
Efficiency Curve
Vinac = 230V
Vo = 400V
Freq = 100kHz
99.3%
Efficiency
RFJS3006F
650V, 30A, 45mohm SSFET power
switch in IsoTO247 package
RLOAD
Digital PWM Controller
XMC 1302
Ordering Information
RFJS3006FDK2 - $1,250.00 each
3kW Totem-Pole PFC Design kit
Includes 4 extra samples of RFJS3006F
Si MOSFET
99.2%
99.1%
99.0%
98.9%
0.68
1.05
1.41
1.74
2.10
2.82
Output Power (kW)
www.rfmd.com/products/powerconversion/
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD.
These products comply with
RFMD’s green packaging standards.
RFJS3006F
Package: Isolated TO247
rGAN-HV™ 650V SSFET with
Ultra-Fast Freewheeling Diode
The RFJS3006F is a 30A, 45mΩ normally-off sourced switched FET (SSFET)
GaN HEMT providing the same insulated gate ease of use as a power
MOSFET or an IGBT, but enabling much higher efficiency at much higher
PWM frequencies. The SSFET uses the bidirectional capability of the GaN
HEMT to provide an ultra-fast freewheeling diode function eliminating the
need for a separate antiparallel diode.
Eon, Eoff vs Temperature (Rg=16 Ω, Vgs = 0-12V)
Pin 1
Drain
60
Eon (uJ), Eoff (uj)
50
Gate
Pin 3
Source
Pin 2
Eon
40
30
Eoff
20
10
0
0
25
50
Key Features
■ Advanced High Voltage
GaN Technology
75
100
125
150
Tj (˚C)
Intrinsic Diode Recovery Characteristics (Qrr)
■ Normally-off Insulated Gate
■ 650V BVDS
■ 45mΩ Max RDS(on)
Qrr:63.5nC
■ 30A ID (cont)
■ UL Isolated Mounting Tab
■ Ultra-Low Switching Losses
— EON 30μJ
— EOFF 20μJ
■ Intrinsic Diode Qrr < 60nC
No snubber, di/dt=1.16A/ns, Irrp : 7.6A
■ Low-Output Capacitance
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD.
These products comply with
RFMD’s green packaging standards.