2SB1689 Transistors Genera purpose amplification(−12V, −1.5A) 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA 0~0.1 0.15 0.2 2.1 0.1Min. Each terminal has same dimensions Abbreviated symbol : EV ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Limits Symbol −15 VCBO −12 VCEO −6 VEBO −1.5 IC Collector current −3 ICP 200 PC Power dissipation Tj 150 Junction temperature Tstg Range of storage temperature −55 to +150 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage (1) Emitter (2) Base (3) Collector Unit V V V A A ∗1 mW∗2 °C °C Package Type Taping Code T106 Basic ordering unit (pieces) 3000 2SB1689 ∗1 Single pulse, PW=1ms ∗2 Each terminal mounted on a recommended land pattern zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −110 − 400 12 Max. − − − −100 −100 −200 680 − − Unit V V V nA nA mV − MHz pF Conditions IC= −10µA IC= −1mA IE= −10µA VCB= −15V VEB= −6V IC= −500mA, IB= −25mA VCE= −2V, IC= −200mA∗ VCE= −2V, IE=200mA, f=100MHz ∗ VCB= −10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SB1689 Transistors Ta=100°C 25°C 100 −40°C 10 0.001 0.01 1 0.1 10 1 Ta=−40˚C 25˚C 100˚C 0.1 Ta=100˚C 25˚C −40˚C 0.01 IC/IB=20 PULSED 0.001 0.001 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) Ta=100°C 25°C −40°C 0.1 0.01 0.5 1 1 10 IC/IB=50 20 10 0.01 0.001 0.001 1.5 Ta=25°C VCE=−2V f=100MHz 100 10 0.001 0.01 0.1 1 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.5 Grounded emitter propagation characteristics Fig.6 Gain bandwidth product vs. emitter current 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) 1000 VCE=−2V PULSED 0 0.1 Ta=25°C PULSED 0.1 Fig.2 Collector-emitter saturation voltage vs.collector current Fig.3 Base-emitter saturation voltage vs.collector current 1 0.001 0.01 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−2V PULSED 10 Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 100 Ta=25°C IE=0mA f=1MHz Cib Cob 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs.emitter-base voltage 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0