SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHzto3.5GHz. The SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.The matte tin finish on the lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxOptimum Technology ide or halogenated fire retardants. Matching® Applied 31.0 GaAs MESFET 28.0 SiGe BiCMOS 25.0 32 22.0 29 GaAs pHEMT GM AX 19.0 26 P 1 dB P1dB =+20.6dBm at 2.44GHz OIP3 =+34.6dBm at 2.44GHz Fixed Wireless, Pager Systems 20 17 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) RF MEMS Min. Specification Typ. Max. Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID 13.0 1.1 Low Cost, High Performance, Versatility 0.9 Parameter 15.6dB GMAX at 2.44GHz 23 10.0 GaN HEMT 16.0 Si CMOS Si BJT 1.5dB NFMN at 2.44GHz OIP3, P1dB (dBm) SiGe HBT Lead Free, RoHS Compliant, and Green Package Applications 35 OIP 3 GMAX (dB) .05GHzto3.5GHz Operation 38 InGaP HBT Si BiCMOS Typical GMAX, OIP3, P1dB @ 3.3V, 86mA GaAs HBT PA Stage for Medium Power Applications AN-079 Contains Detailed Application Circuits Unit Condition Power Gain 19.0 dB 880MHz, ZS =ZSOPT, ZL =ZLOPT Output Power at 1dB Compression [2] 14.0 20.0 dB dBm 2440MHz 880MHz, ZS =ZSOPT, ZL =ZLOPT Output Third Order Intercept Point [2] 20.6 33.4 dBm dBm 2440MHz 880MHz, ZS =ZSOPT, ZL =ZLOPT Noise Figure 34.6 3.1 dBm dB 2440MHz 880MHz, ZS =ZSOPT, ZL =ZLOPT 2.4 1.0 1.5 22.9 15.0 18.0 dB dB dB dB dB dB Minimum Noise Figure Maximum Available Gain 2440MHz 880MHz, ICE =25mA, ZS =ΓOPT, ZL =ZL, NFMIN 2440MHz 880MHz, ZS =ZS, ZL =ZL 2440MHz 880MHz Insertion Gain [1] 120 180 300 DCC Current Gain Breakdown Voltage 5.7 6.0 V Collector - Emitter Device Operating Voltage 3.8 V Collector - Emitter Device Operating Current 95 mA Collector - Emitter Thermal Resistance 151 °C/W junction to backside Test Conditions: VCE =3.3V, ICE =86mA Typ. (unless noted otherwise), TL =25°C, OIP3 Tone Spacing=1MHz, POUT per tone=5dBm [1] 100% production tested using 50Ω contact board (no matching circuitry) [2] Data with Application Circuit RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS100809 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 5 SGA8543Z Absolute Maximum Ratings Parameter Rating Unit mA Max Device Current (lCE) 105 Max Device Voltage (VCE) 4.5 V Max RF Input Power *(See Note) 18 dBm Max Junction Temperature (TJ) 150 °C Operating Temperature Range (TL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. See Graph Max Storage Temperature 150 ESD Rating - Human Body Model (HBM) °C Class 1B Moisture Sensitivity Level MSL 1 *Note: Load condition1, ZL =50Ω. Load condition2, ZL =10:1 VSWR. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical Performance with 2.45GHz Application Circuit Freq (MHz) VCE (v) ICE (mA) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) 880 3.3 86.0 20.0 33.4 19.0 -15.0 -11.0 2440 3.3 86.0 20.6 34.6 14.0 -16.0 -22.0 Test Conditions: VS =5V, IS =96mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL =25°C NF (dB) ZSOPT (W) ZLOPT (W) 3.1 2.4 22.9-j2.95 9.3-j9.9 29.4+j0.9 33.6-j4.7 Power Derating Curve Total Dissipated Power (W) 0.6 0.5 0.4 0.3 0.2 0.1 Operational Limit (Tj<140C) ABS MAX (Tj<150C) 0.0 -40.0 -10.0 20.0 50.0 80.0 110.0 140.0 170.0 Lead Temperature (C) 2 of 5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS100809 SGA8543Z Insertion Gain and Isolation (ICE = 86mA) 40.0 0 180.0 -5 160.0 -10 140.0 25.0 -15 120.0 20.0 -20 100.0 35.0 30.0 DCIV Curves (2440 MHz Ckt.) 15.0 -25 IC (mA) Gain, GMAX (dB) Isolation 80.0 GMAX 10.0 -30 60.0 5.0 -35 40.0 -40 20.0 -45 0.0 Gain 0.0 -5.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE (Volts) Frequency (GHz) S11 versus Frequency S22 versus Frequency S11 Vs. Frequency S22 Vs. Frequency 5 GHz 6 GHz 3.5 GHz 5 GHz 2.44 GHz 6 GHz 3.5 GHz 8 GHz 8 GHz 2.44 GHz 1.96 GHz 1.96 GHz .88 GHz .88 GHz .5 GHz .5 GHz .05 GHz .2 GHz .05 GHz .2 GHz .1 GHz .1 GHz Note: S-parameters are de-embedded to the device leads with ZS =ZL =50Ω. De-embedded S-parameters can be downloaded from our website (www.rfmd.com) DS100809 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 5 SGA8543Z Part Identification Marking 4 3 85Z 1 2 Alternate Marking with Trace Code Only Trace Code Suggested Pad Layout 4 of 5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS100809 SGA8543Z Pin 1 2 3 4 Function RF IN GND RF OUT GND Description RF input / Base Bias. External DC blocking capacitor required. Connection to ground. Use via holes to reduce lead inductance. Place via holes as close to lead as possible. RF Out / Collector bias. External DC blocking capacitor required. Connection to ground. Use via holes to reduce lead inductance. Place via holes as close to lead as possible. Package Dimensions Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. D e e 4 SYMBOL MIN MAX E 1.15 1.35 D 1.85 2.25 HE 1.80 2.40 A 0.80 1.10 A2 0.80 1.00 A1 0.00 0.10 Q1 0.10 0.40 3 L HE C L E 1 b Q1 C L b1 e 2 C 0.65 BSC b 0.25 0.40 b1 0.55 0.70 c 0.10 0.18 L 0.10 0.30 NOTE: A2 A A1 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR. 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70. 5. DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM. ie :REVERSE TRIM/FORM. 6. PACKAGE SURFACE TO BE MIRROR FINISH. Ordering Information DS100809 Ordering Code Description SGA8543ZSQ Sample Bag with 25 pieces SGA8543ZSR 7” Reel with 100 pieces SGA8543Z 7” Reel with 3000 pieces SGA8543Z-EVB1 880MHz PCBA with 5-piece sample bag SGA8543Z-EVB2 2440MHz PCB with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 5