RF5110G 3V GENERAL PURPOSE/GSM POWER AMPLIFIER VCC NC 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2 4 9 RF OUT Applications 15 6 7 8 2f0 5 NC GSM: Single 2.7V to 4.8V Supply +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM 16 VCC2 General Purpose: Single 2.8V to 3.6V Supply 32dBm Output Power 53% Efficiency 150MHz to 960MHz Operation VCC2 APC2 Features APC1 Package Style: QFN, 16-Pin, 3 x 3 Functional Block Diagram FM Radio Applications: 150MHz/220MHz/450MHz 865MHz to 928MHz 3V GSM Cellular Handsets GPRS Compatible Product Description The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands from 150MHz to 960MHz. On-board power control provides over 70dB of control range with an analog voltage input, and allows for power down with a logic "low" in standby operation. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. Ordering Information RF5110G 3V General Purpose/GSM Power Amplifier RF5110GPCBA-410 Fully Assembled Evaluation Board GaAs HBT GaAs MESFET InGaP HBT Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 24 RF5110G Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +6.0 VDC Power Control Voltage (VAPC1,2) -0.5 to +3.0 V DC Supply Current 2400 mA Input RF Power +13 dBm 50 % Duty Cycle at Max Power Output Load VSWR Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10:1 Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Note: This table applies to radio operating within GSM specification. For ratings pertaining to general purpose radio applications, see theory of operation section. Parameter Min. Specification Typ. Max. Unit General Purpose Radio: Temp=25°C, VAPC1,2 =2.8V, Duty Cycle=100% Overall Operating Frequency 150 MHz Output Power 32 dBm 31.5 dB Gain Efficiency 53 % Operating Frequency 220 MHz Output Power 32 dBm Gain 32 dB Efficiency 52 % Operating Frequency 450 MHz Output Power 32 dBm Gain 32.5 dB Efficiency 50.5 Operating Frequency 865 Output Power Gain Efficiency 2 of 24 Condition VCC =3.3V. See Application Schematic. VCC =3.3V. See Application Schematic. VCC =3.0V. See Application Schematic. % 928 32 MHz VCC =3.3V. See Application Schematic. dBm 33.0 29.5 dB Equals typical at respective frequency corner 49 49 % Equals typical at respective frequency corner 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Parameter Min. Specification Typ. Max. Unit Condition Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V, PIN =+4.5dBm, Freq=880MHz to 915MHz, 37.5% Duty Cycle, pulse width=1731s Overall Operating Frequency Range 880 to 915 MHz See evaluation board schematic. Usable Frequency Range 800 to 950 MHz Using different evaluation board tune. Maximum Output Power 33.8 34.5 33.1 Total Efficiency 50 +4.5 57 % At POUT,MAX, VCC =3.6V % POUT =+20dBm % POUT =+10dBm +7.0 Output Noise Power Forward Isolation Second Harmonic -20 Third Harmonic -25 All Other Non-Harmonic Spurious Input Impedance +9.5 dBm -72 dBm RBW=100kHz, 925MHz to 935MHz, POUT,MIN <POUT <POUT,MAX, PIN,MIN <PIN <PIN,MAX, VCC =3.3V to 5.0V -81 dBm RBW=100kHz, 935MHz to 960MHz, POUT,MIN <POUT <POUT,MAX, PIN,MIN <PIN <PIN,MAX, VCC =3.3V to 5.0V -22 dBm VAPC1,2 =0.3V, PIN =+9.5dBm -7 dBm PIN =+9.5dBm -7 dBm PIN =+9.5dBm -36 dBm 50 Optimum Source Impedance Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V Temp=+60°C, VCC =3.3V, VAPC1,2 =2.8V 12 5 Input Power for Max Output dBm dBm 40+j10 Input VSWR 2.5:1 For best noise performance POUT,MAX-5dB<POUT <POUT,MAX 4:1 POUT <POUT,MAX-5dB Output Load VSWR Stability 8:1 Ruggedness 10:1 Output Load Impedance Spurious<-36dBm, VAPC1,2 =0.3V to 2.6V, RBW=100kHz No damage 2.6-j1.5 Load Impedance presented at RF OUT pad V Maximum POUT, Voltage supplied to the input Power Control VAPC1 VAPC2 Power Control “ON” 2.6 Power Control “OFF” 0.2 Power Control Range 75 Gain Control Slope 5 0.5 100 APC Input Capacitance APC Input Current V dB 4.5 Turn On/Off Time Minimum POUT, Voltage supplied to the input VAPC1,2 =0.2V to 2.6V 150 dB/V 10 pF DC to 2MHz POUT =-10dBm to +35dBm 5 mA VAPC1,2 =2.8V 25 A VAPC1,2 =0V 100 ns VAPC1,2 =0 to 2.8V V Specifications 4.8 V Nominal operating limits, POUT <+35dBm 5.5 V With maximum output load VSWR 6:1, POUT <+35dBm A DC Current at POUT,MAX Power Supply Power Supply Voltage 3.5 2.7 Power Supply Current DS110914 2 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 24 RF5110G 15 4 of 24 200 335 mA Idle Current, PIN <-30dBm 1 10 A PIN <-30dBm, VAPC1,2 =0.2V 1 10 A PIN <-30dBm, VAPC1,2 =0.2V, Temp=+85°C 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Pin 1 Function VCC1 2 GND1 3 RF IN Description Interface Schematic Power supply for the pre-amplifier stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage match. Refer to the application schematic for proper configuration. Note that position and value of the components are important. Ground connection for the pre-amplifier stage. Keep traces physically short and connect immediately to the ground plane for best performance. It is important for stability that this pin has it’s own vias to the groundplane, to minimize any common inductance. RF Input. This is a 50 input, but the actual impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 3. See pin 1. VCC1 RF IN From Bias GND1 Stages 4 GND2 5 VCC2 Ground connection for the driver stage. To minimize the noise power at the output, it is recommended to connect this pin with a trace of about 40mil to the ground plane. This will slightly reduce the small signal gain, and lower the noise power. It is important for stability that this pin have it’s own vias to the ground plane, minimizing common inductance. Power supply for the driver stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage match. Please refer to the application schematic for proper configuration, and note that position and value of the components are important. See pin 3. VCC2 From Bias GND2 Stages 6 7 8 VCC2 NC 2F0 9 RF OUT Same as pin 5. Not connected. Connection for the second harmonic trap. This pin is internally connected to the RF OUT pins. The bonding wire together with an external capacitor form a series resonator that should be tuned to the second harmonic frequency in order to increase efficiency and reduce spurious outputs. RF Output and power supply for the output stage. Bias voltage for the final stage is provided through this wide output pin. An external matching network is required to provide the optimum load impedance. Same as pin 9. RF OUT From Bias GND Stages PCKG BASE 10 11 12 13 14 15 16 RF OUT RF OUT RF OUT NC VCC APC2 APC1 Same as pin 9. Same as pin 9. Same as pin 9. Same as pin 9. Same as pin 9. Not connected. Power supply for the bias circuits. Power Control for the output stage. See pin 16 for more details. See pin 16. Power Control for the driver stage and pre-amplifier. When this pin is "low," all circuits are shut off. A "low" is typically 0.5V or less at room temperature. A shunt bypass capacitor is required. During normal operation this pin is the power control. Control range varies from about 1.0V for -10dBm to 2.6V for +35dBm RF output power. The maximum power that can be achieved depends on the actual output matching; see the application information for more details. The maximum current into this pin is 5mA when VAPC1 =2.6V, and 0mA when VAPC =0V. APC VCC To RF S ta g e s GND GND Pkg Base DS110914 GND Ground connection for the output stage. This pad should be connected to the ground plane by vias directly under the device. A short path is required to obtain optimum performance, as well as to provide a good thermal path to the PCB for maximum heat dissipation. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 24 RF5110G Package Drawing NOTES: 1. SHADED PIN IS LEAD 1. 2. DIMENSION APPLIES TO PLATED TERMINAL: TO BE MEASURED BETWEEN .20 & .25mm FROM TERMINAL END. 3. PIN 1 IDENTIFIER MUST EXIST ON TOP SURFACE OF PACKAGE BY IDENTIFICATION MARK OR FEATURE ON THE PACKAGE BODY. EXACT SHAPE AND SIZE IS OPTIONAL. 4. DIE THICKNESS ALLOWABLE IS .305mm MAX. 5. PACKAGE WARPAGE: MAX. .05mm. 2 PLCS -A- 0.10 C A 3.00 1.50 TYP 2 PLCS 3 0.10 C B 3.00 0.10 C B 2 PLCS .05 C .90 .85 .70 .65 .05 .00 12° MAX .10 .60 .24 TYP 1.37 TYP .30 2 .18 PIN 1 ID R.20 1.65 SQ. 1.35 .50 .30 -B- C A B .50 -CSEATING PLANE 2.75 SQ 0.10 C A 2 PLCS 6 of 24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Theory of Operation General Purpose Radio Applications RF5110G has seen widespread use in GSM handset applications, but it can also be used as a final transmit PA for general purpose radio (FSK, ASK). The application schematics in this data sheet outline matching for commonly used frequency bands. Matching is shown for 150MHz, 220MHz, 450MHz, and 865MHz to 928MHz. The standard 900MHz GSM evaluation board can be easily converted for these bands, using the values indicated. The 865MHZ to 928MHz conversion is the most direct, with adjustment required only on output match. The others show changes at input, 1st interstage, 2nd interstage, and output. Common components can be used in most cases. The only key component is the choke seen on RF output. During development of the matches, one goal was to achieve stability (no spurious) into 5:1 output VSWR. The 1H value and construction proved essential in achieving this level of stability. This Theory of Operation applies to an open loop system utilizing no power control. In the traditional GSM application, power is sampled at the RF5110G’s output and fed back to a log detect function. DAC voltage (VSET) is also input to the log detector. Log detector output drives the VAPC pin of RF5110G such that output power corresponding to VSET is obtained, with constant input power>0dBm applied. Power can be set over the full range of defined levels, ranging from small signal to compression. In addition, the control loop is used for ramping in accordance with GSM specifications. If power control is used in the system under consideration, most of the open loop constraints covered here will not apply, aside from thermal considerations discussed below. When used in an open loop system, RF5110G should be operated in compression. When running small signal, some variation in gain (and therefore output power) will be seen over temperature extremes between -40C and 85C. When operated in compression, the impact of this variation is substantially mitigated, making open loop application practical. “Compression” in this case is defined where efficiency exceeds 45%. In the graph section of this data sheet, curves in each frequency band are shown for gain/efficiency/junction temperature versus POUT/VCC. As indicated in the graphs, high efficiency can be obtained at compressed output power with appropriate choice of supply voltage (VCC). For example, see the efficiency curves for 450MHz. Operation at 31dBm shows efficiency=49% for VCC =2.8V. If 32dBm output is required in design, using VCC =3.3V gives 47% efficiency. So, the system designer can choose an appropriate supply voltage which provides high efficiency at target POUT. One important detail to consider is voltage level at VAPC. As noted earlier, VAPC level varies when operating within a power control loop. This voltage controls output power from the PA. In open loop mode, VAPC should be set at 2.8V to ensure consistent output power from RF5110G in volume production. Another design consideration is maintaining acceptable junction temperature. In the GSM radio, output power in excess of 34dBm is common. This is allowable due to the limit on transmit duty cycle and pulse width. The worst case condition sees duty cycle at 50%, with pulse width equal to approximately 2msec. In this situation, the PA cuts off before junction temperature reaches the maximum that would be seen with longer pulse width. For the non–GSM radio, it is assumed pulse width will exceed 2msec. Thus, restrictions must be imposed on allowable maximum output power. The most conservative analysis is used, that for 100% duty cycle. Thermal scans have shown RTH (thermal resistance) of RF5110G+the evaluation board to be 36C/W. RTH for the evaluation board has been calculated at 10.4C/W, giving RF5110G RTH_JC =25.6C/W. Data sheet curves show projected junction temperatures (TJ) for each general purpose radio frequency band. RTH of RF5110G+the evaluation board is taken into account. A conservative goal is TJ 150C when operating at a maximum specified ambient temperature of 85C. Maximum output power will then be bounded by that limit. Observing the TJ curves in bands from 150MHz to 928MHz, one sees that 32dBm is always at or below 150C. This shows that the output load line in each match was intentionally set for high efficiency. To ensure equivalent performance in one’s system, care should be taken to achieve efficiency equal to or better than that seen in the data. Thermal performance can be predicted with a simple calculation at a desired output power: P_DC=VCC xICC POUT (Watt)=[10^(POUT (dBm)/10)]/1000 DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 24 RF5110G Dissipated Power=PDISS =P_DC–POUT RTH =RTH_JC_RF5110G +RTH_SYSTEM_BOARD (RTH_JC_RF5110G =25.6C/W) Junction Temperature @ 85C ambient=TJ =85C+PDISS xRTH Efficiency calculation alone may not suffice, as the system board may be substantially thicker than that of the RF5110G evaluation board. This will increase RTH for the system, and likewise TJ. Layout considerations are important in repeating RF5110G evaluation board performance in a system design. Via arrangement underneath the part is critical, as are other via arrangements and supply trace routings (see “GSM Applications” section for the GSM case). Layout files for the RF5110G evaluation board can be obtained by contacting RFMD applications/sales. As already stated, output match is a primary consideration in achieving desired performance. In moving from the RF5110G evaluation board to the system board, the first approach would be to implement the same matching topology/values as seen in application schematics. Performance on the system board can then be checked, particularly with regard to gain and efficiency at target output power. If needed, matching values can be adjusted to obtain equivalent performance. Observing each output match from 150MHz to 900MHz, it can be seen that topology takes 1 of 2 possible configurations: C – L – C: 150MHz, 220MHz, 900MHz L – C: 450MHz Other areas which impact response are the 1st and 2nd interstage matches, found at pins 1 and 5/6, respectively. Small signal responses for each match are shown in this data sheet. Checking response on the system board will verify that input/interstage matches are in line (output to some extent as well). This verification can be done by placing SMA connectors at the input/output of RF5110G, and observing small signal response. Following the guidelines contained within this section should ensure successful implementation of RF5110G in general radio applications. GSM Applications The RF5110G is a three-stage device with 32 dB gain at full power. Therefore, the drive required to fully saturate the output is +3dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to operate to full specification. Power control is provided through a single pin interface, with a separate Power Down control pin. The final stage ground is achieved through the large pad in the middle of the backside of the package. First and second stage grounds are brought out through separate ground pins for isolation from the output. These grounds should be connected directly with vias to the PCB ground plane, and not connected with the output ground to form a so called “local ground plane” on the top layer of the PCB. The output is brought out through the wide output pad, and forms the RF output signal path. The amplifier operates in near Class C bias mode. The final stage is “deep AB”, meaning the quiescent current is very low. As the RF drive is increased, the final stage self-biases, causing the bias point to shift up and, at full power, draws about 2000mA. The optimum load for the output stage is approximately 2.6. This is the load at the output collector, and is created by the series inductance formed by the output bond wires, vias, and microstrip, and 2 shunt capacitors external to the part. The optimum load impedance at the RF Output pad is 2.6-j1.5 With this match, a 50 terminal impedance is achieved. The input is internally matched to 50 with just a blocking capacitor needed. This data sheet defines the configuration for GSM operation. The input is DC coupled; thus, a blocking cap must be inserted in series. Also, the first stage bias may be adjusted by a resistive divider with high value resistors on this pin to VPC and ground. For nominal operation, however, no external adjustment is necessary as internal resistors set the bias point optimally. VCC1 and VCC2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to tune to the operating band. Essentially, the bias is fed to this pin through a short microstrip. A bypass capacitor sets the inductance seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. This supply should be bypassed individually with 100pF capacitors before being combined with VCC for the output stage to prevent feedback and oscillations. 8 of 24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G The RF OUT pin provides the output power. Bias for the final stage is fed to this output line, and the feed must be capable of supporting the approximately 2A of current required. Care should be taken to keep the losses low in the bias feed and output components. A narrow microstrip line is recommended because DC losses in a bias choke will degrade efficiency and power. While the part is safe under CW operation, maximum power and reliability will be achieved under pulsed conditions. The data shown in this data sheet is based on a 12.5% duty cycle and a 600s pulse, unless specified otherwise. The part will operate over a 3.0V to 5.0V range. Under nominal conditions, the power at 3.5V will be greater than +34.5dBm at +90°C. As the voltage is increased, however, the output power will increase. Thus, in a system design, the ALC (Automatic Level Control) Loop will back down the power to the desired level. This must occur during operation, or the device may be damaged from too much power dissipation. At 5.0V, over +38dBm may be produced; however, this level of power is not recommended, and can cause damage to the device. The HBT breakdown voltage is >20V, so there are no issue with overvoltage. However, under worst-case conditions, with the RF drive at full power during transmit, and the output VSWR extremely high, a low load impedance at the collector of the output transistors can cause currents much higher than normal. Due to the bipolar nature of the devices, there is no limitation on the amount of current de device will sink, and the safe current densities could be exceeded. High current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and may force early failures. The RF5110G includes temperature compensation circuits in the bias network to stabilize the RF transistors, thus limiting the current through the amplifier and protecting the devices from damage. The same mechanism works to compensate the currents due to ambient temperature variations. To avoid excessively high currents it is important to control the VAPC when operating at supply voltages higher than 4.0V, such that the maximum output power is not exceeded. DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 24 RF5110G Internal Schematic VCC1 5 VCC2 RF OUT 4.5 pF APC1 VCC APC2 VCC RF IN 5 400 300 1.0 k APC1 PKG BASE 10 of 24 GND2 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. PKG BASE DS110914 RF5110G Application Schematic 150MHz FM Band VAPC VCC VCC + VAPC 10 nF VCC1 10 nF 1 nF 27 pF 10 nF 47 pF 3.3 F 8.2 nH 16 100 pF 15 14 13 1 nF 1 12 2 11 3 10 50 mils 9 C10 33 pF 1 H 1 Taiyo Yuden NR3012T1R0N RF IN 180 4 5 0 VCC2 + 3.3 F 10 nF 6 7 100 pF RF OUT L4 15 nH C11 2 56 pF 8 33 nH 1 nF 27 pF 1 Requires 2 C11 layout change to standard evaluation board. adjacent to L4. Application Schematic 220MHz FM Band VAPC VCC VCC + VAPC 10 nF VCC1 10 nF 1 nF 27 pF 10 nF 47 pF 8.2 nH 16 15 14 13 1 nF 1 12 2 11 3 10 100 pF RF IN 180 4 9 5 0 3.3 F 6 7 1 H1 Taiyo Yuden NR3012T1R0N 10 nH 100 pF RF OUT C102 33 pF C113 39 pF 8 33 nH VCC2 + 3.3 F 10 nF 1 nF 27 pF 1Requires layout change to standard evaluation board. is adjacent to L4. 3C11 is 140 mils from L4. 2C10 DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 24 RF5110G Application Schematic 450MHz FM Band VAPC VCC VCC + VAPC 10 nF VCC1 10 nF 1 nF 330 pF 10 nF 47 pF 3.3 F 18 16 15 14 13 1 nF 1 12 2 11 3 10 56 pF RF IN 180 4 9 5 6 7 47 pF 1 H1 Taiyo Yuden NR3012T1R0N L4 2.7 nH 56 pF RF OUT C11 22 pF 2 pF 8 C11 adjacent to L4. 0 VCC2 + 3.3 F 1Requires 12 of 24 10 nF 1 nF 6.8 nH 330 pF layout change to standard evaluation board. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Application Schematic 865MHz and 902MHz to 928MHz ISM Bands VAPC VCC VCC + VAPC 10 nF VCC1 10 nF 1 nF 27 pF 10 nF 47 pF 11 nH 16 15 14 13 1 nF 1 12 2 11 3 10 56 pF RF IN 180 4 9 5 10 ? F errite 6 1.6 nH 3.3 F 10 nF 1 nF 15 pF 7 8.8 nH 47 pF 27 pF L4 3.6 nH 56 pF RF OUT 55 mils C10 15 pF C11 5 pF 8 1.5 pF VCC2 + 3.3 F C10 and C11 are adjacent to L4. 27 pF Share the same pad. DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 24 RF5110G Application Schematic GSM850 Lumped Element J3 VAPC VCC 50 strip VCC P1 VAPC 1 VCC 1 VAPC P1-2 2 VCC 2 GND 3 GND 3 GND 4 GND CON3 + C18 3.3 F VCC1 C2 10 nF J1 RF IN C3 1 nF C19 27 pF L1 11 nH C1 56 pF 50 strip R1 180 C17 10 nF C16 10 nF 16 2 11 3 10 4 9 14 of 24 C5 10 nF C6 1 nF 7 CON4 C13 1 nF C14 33 pF L3 8.8 nH L4 1.8 nH 60 mils C9 15 pF 65 mils C10 2 pF C12 56 pF 40 mils 50 strip J2 RF OUT C11 9.1 pF 8 C9 and C10 share the same pad. L6 1.6 nH C20 13 pF 6 P2-1 13 12 C8 1.5 pF VCC2 + C21 3.3 F 14 1 5 L2 10 Ferrite 15 C15 33 pF P2 P1-1 C7 33 pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Evaluation Board Schematic GSM900 Lumped Element VCC 50 strip J3 VAPC VCC P1 VAPC 1 VCC 1 VAPC P1-2 2 VCC 2 GND 3 GND 3 GND GND CON3 C18 3.3 F 4 + VCC1 C2 10 nF C3 1 nF C19 27 pF C1 56 pF 50 strip J1 RF IN L1 11 nH R1 180 C17 10 nF C16 10 nF 16 15 C5 10 nF C6 1 nF 11 L3 8.8 nH 3 10 55 mils 4 9 7 C9 15 pF L4 3.6 nH C12 56 pF 50 strip 39 mils C10 11 pF J2 RF OUT C11* 5.6 pF 8 C9 and C10 share the same pad. L6 1.6 nH C20 15 pF C14 47 pF 2 *C11 is adjacent to L4. C8 1.5 pF VCC2 + C21 3.3 F 13 12 6 P2-1 CON4 C13 1 nF 1 5 L2 10 Ferrite 14 C15 47 pF P2 P1-1 C23 27 pF C7 27 pF C23 and C27 share the same pad. DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 15 of 24 RF5110G Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.032”; Board Material FR-4; Multi-Layer 16 of 24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Typical Test Setup Power Supply V- V+ S+ S- RF Generator Spectrum Analyzer 3dB 10dB/5W Buffer x1 OpAmp Pulse Generator A buffer amplifier is recommended because the current into the VAPC changes with voltage. As an alternative, the voltage may be monitored with an oscilloscope. Notes about testing the RF5110G The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effect on the signal generator as a result of switching the input impedance of the PA. When VAPC is switched quickly, the resulting input impedance change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead of an attenuator an isolator may also be used. The attenuator at the output is to prevent damage to the spectrum analyzer, and should be sized accordingly to handle the power. It is important not to exceed the rated supply current and output power. When testing the device at higher than nominal supply voltage, the VAPC should be adjusted to avoid the output power exceeding +36dBm. During load-pull testing at the output it is important to monitor the forward power through a directional coupler. The forward power should not exceed +36dBm, and VAPC needs to be adjusted accordingly. This simulates the behavior for the power control loop. To avoid damage, it is recommended to set the power supply to limit the current during the burst not to exceed the maximum current rating. DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 17 of 24 RF5110G PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Pattern A = 0.64 x 0.28 (mm) Typ. B = 0.28 x 0.64 (mm) Typ. C = 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B B B B Pin 1 Pin 12 A A A A 0.50 Typ. C A A A A 0.75 Typ. 1.50 Typ. 0.55 Typ. B B B B Pin 8 0.55 Typ. 0.75 Typ. Figure 1. PCB Metal Land Pattern (Top View) 18 of 24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 0.74 x 0.38 (mm) Typ. B = 0.38 x 0.74 (mm) Typ. C = 1.60 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B B B B Pin 1 0.50 Typ. Pin 12 A A A A C 0.55 Typ. A A A A B 0.55 Typ. B B 0.75 Typ. 1.50 Typ. B Pin 8 0.75 Typ. Figure 2. PCB Solder Mask Pattern (Top View) Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 19 of 24 RF5110G RF5110G 153 MHz Junction Temperature Versus POUT/VCC Ambient Temperature = 85°C 40 80 142 38 75 140 36 70 34 65 32 60 30 55 28 50 26 45 24 40 153 MHz 153 MHz 153 MHz 153 MHz 153 MHz 153 MHz 22 20 27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 gain 3.6 V gain 3.3 V gain 3.0 V eff 3.6 V eff 3.3 V eff 3.0 V 31.5 32.0 Junction Temperature (°C) 138 Efficiency (%) Gain (dB) RF5110G 153 MHz Gain and Efficiency Versus POUT/VCC 136 134 132 130 128 126 153 MHz 3.6 V 124 35 122 30 120 32.5 153 MHz 3.3 V 153 MHz 3.0 V 27.5 28.0 28.5 29.0 POUT (dBm) 30.0 30.5 31.0 31.5 32.0 RF5110G 220 MHz Junction Temperature Versus POUT/VCC Ambient Temperature = 85°C 60 160 47 55 155 45 50 150 43 45 145 41 40 140 39 35 37 30 35 25 33 20 120 31 15 115 10 110 2.8 V 3.3 V 5 105 3.6 V 0 100 2.8 V gain 3.3 V gain 3.6 V gain 2.8 V eff 3.3 V eff 3.6 V eff 29 27 25 27 28 29 30 31 POUT (dB) 20 of 24 32 33 34 35 135 TJ (°C) Efficiency (%) 49 26 32.5 POUT (dBm) RF5110G 220 MHz Gain and Efficiency Versus POUT/VCC Gain (dB) 29.5 130 125 26 27 28 29 30 31 32 33 34 35 POUT (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G RF5110G 450 MHz Junction Temperature Versus POUT/VCC Ambient Temperature = 85°C RF5110G 450 MHz Gain and Efficiency Versus POUT/VCC 48 60 46 55 158 156 154 50 44 152 45 150 40 148 35 38 30 36 25 2.8 V gain 3.3 V gain 2.8 V eff 3.3 V eff 34 146 TJ (°C) 40 Efficiency (%) Gain (dB) 42 144 142 140 138 20 136 15 32 134 10 2.8 V 3.3 V 132 30 28 26 27 28 29 30 31 32 33 34 5 130 0 128 35 26 27 28 29 POUT (dBm) 55 865 MHz gain 2.8V 865 MHz gain 3.3V 928 MHz gain 3.3V 50 865 MHz gain 3.6V 38 928 MHz gain 3.6V 865 MHz eff 2.8V 37 45 928 MHz eff 2.8V 865 MHz eff 3.3V 928 MHz eff 3.3V Gain (dB) 928 MHz eff 3.6V 35 34 33 30 32 25 31 30 20 29 15 28 27 10 27 28 29 30 31 PIN (dBm) DS110914 32 33 34 TJ (°C) 40 865 MHz eff 3.6V 35 Efficiency (%) 36 32 33 34 35 160 158 156 154 152 150 148 146 928 MHz gain 2.8V 39 31 RF5110G865 MHz to 928 MHz Junction Temperature Versus POUT/VCC Ambient Temperature = 85°C RF5110G 865 MHz to 928 MHz Gain and Efficiency Versus POUT/VCC 40 30 POUT (dBm) 144 142 140 138 2.8V 865 MHz 2.8V 928 MHz 136 134 132 130 3.3V 865 MHz 3.3V 928 MHz 3.6V 865 MHz 3.6V 928 MHz 128 126 124 122 120 27 28 29 30 31 32 33 34 PIN (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 21 of 24 RF5110G Application Schematic Small Signal Response 22 of 24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914 RF5110G Tape and Reel Information Carrier tape basic dimensions are based on EIA481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier, ESD bag, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required, devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033A. The following table provides useful information for carrier tape and reels used for shipping the devices described in this document. RFMD Part Number Reel Diameter Inch (mm) Hub Diameter Inch (mm) Width (mm) Pocket Pitch (mm) Feed Units per Reel RF5110GTR7 7 (178) 2.4 (61) 12 4 Single 2500 QFN (Carrier Tape Drawing with Part Orientation) Notes: Ao = 3.18 ± 0.10 Bo = 3.18 ± 0.10 F = 5.50 ± 0.05 Ko = 1.02 ± 0.10 P = 4.00 ± 0.10 W = 12.00 +0.30/-0.10 1. All dimensions are in millimeters (mm). 2. Unless otherwise specified, all dimension tolerances per EIA-481. 4.00 ± 0.10 Ø1.50±.10 2.00 ± 0.05 15 inch Trailer Sprocket holes toward rear of reel Top View 1.75±0.10 15 inch Leader 0.279 ±.020 Pin 1 Location F RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code P RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code Ao W Bo Ko Direction of Feed DS110914 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 23 of 24 RF5110G RoHS* Banned Material Content RoHS Compliant: Yes Package total weight in grams (g): 0.021 Compliance Date Code: N/A Bill of Materials Revision: A Pb Free Category: Bill of Materials e3 Parts Per Million (PPM) Pb Cd Hg Cr VI PBB PBDE Die 0 0 0 0 0 0 Molding Compound 0 0 0 0 0 0 Lead Frame 0 0 0 0 0 0 Die Attach Epoxy 0 0 0 0 0 0 Wire 0 0 0 0 0 0 Solder Plating 0 0 0 0 0 0 This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above. * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 24 of 24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110914