NOT FOR NEW DESIGN

RF5373
1.8V TO 3.6V IEEE802.11b/g/n
AND BLUETOOTH DRIVER/AMPLIFIER

DET
POUT =19dBm Meeting Class 1
BT
Gain: 28dB Typ 11b/g/BT

3
4
Functional Block Diagram
General Purpose Amplification
Product Description
Class 1 Bluetooth Power Amplifier
The RF5373 is a linear driver/amplifier that meets the FCC and ETSI
requirements for operation in the 2.4GHz to 2.5GHz (IEEE802.11b/g/n
and BT Class 1) bands. Operating from a single 1.8V to 3.6V supply, the
amplifier will easily be incorporated into WiFi designs with minimal external components. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device
is provided in a 2.2mmx2.2mmx0.6mm, 8-pin, QFN with a backside
ground.
Driver Amplifier for TX Power
Amplifier
N
O
T
FO

IEEE802.11b/g/n Driver/Amplifier
5 RF OUT
R

Bias
N/C 2
Applications

6 N/C
Very Low Current (see table for
all modes)
>5dBm 11g POUT @<1% and
10dBm 11g POUT @<4%
IG
N
RF IN 1
PDETECT

7
D
ES

8
VREG

Single Power Supply 1.8V to
3.6V
N
EW

VCC
Features
N/C
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm
Ordering Information
RF5373
RF5373SR
RF5373TR7
RF5373PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully assembled evaluation board tuned for 2.4GHz to
2.5GHz and 5 loose sample pieces
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT

SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
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RF5373
Supply Voltage
Unit
-0.5 to +3.6
V
DC Supply Current
90
mA
RF - Input Power
15
dBm
Operating Temperature
-30 to +85
°C
Storage Temperature
-40 to +100
°C
Moisture Sensitivity
JEDEC Level 3
ESD Human Body Model
(EIA/JESD22-114-A)
600
V
ESD Machine Model (EIA/JESD22115-A)
100
V
Parameter
Min.
Specification
Typ.
Max.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
IG
N
Rating
D
ES
Absolute Maximum Ratings
Parameter
Unit
Condition
Nominal conditions: VCC =3.1V, VREG =1.75V,
Freq=2.45GHz, Temp=+25°C, unless otherwise specified.
IEEE802.11b
Frequency
2.4
2.5
12
Gain
25
Gain Variance Over Temperature
-30°C to +85°C
Second Harmonic
802.11b Adjacent Channel Power
dB
2.4GHz to 2.5GHz
±dB
2.4GHz to 2.5GHz
-27
dBm
Fundamental frequency is between 2400MHz
to 2500MHz (RFPOUT =+12dBm), see note 2
-32
dBc
POUT =12dBm at nominal conditions
-38
FO
O
T
Operating Current
-52
dBc
POUT =12dBm at nominal conditions
-43
dBm
Amplifier setup for best IEEE802.11g performance; FC=2412MHz; RFPOUT =+12dBm;
IEEE802.11b CCK 11Mbps modulation;
T=+25°C; measured at FC-25MHz
-43
dBm
Amplifier setup for best IEEE802.11g performance; FC=2462MHz; RFPOUT =+12dBm;
IEEE802.11b CCK 11Mbps modulation;
T=+25°C; measured at FC+25MHz
50
Idle Current
45
IREG Current
5.5
Shutdown Current
N
Meeting IEEE802.11b spectral mask requirements
28
-56
IEEE802.11b Spectral Mask per
FCC Part 15.205
GHz
dBm
1.0
R
Alternate Channel Power
16
N
EW
Output Power
mA
POUT =12dBm at nominal conditions
mA
At nominal conditions with no RF
6.5
mA
10
A
Power Detector
2 of 13
POUT =+10dBm
0.5
0.6
0.7
V
POUT =+12dBm
0.52
0.65
0.75
V
Input Capacitance
5
pF
Bandwidth
8
MHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110618
RF5373
Parameter
Min.
Specification
Typ.
Unit
Max.
Condition
Nominal conditions: VCC =3.1V, VREG =1.75V
pulsed at 1% to 100% duty cycle,
Freq=2.45GHz, Temp=+25°C, unless otherwise specified.
IEEE802.11g
2.4
Output Power
10
EVM
Gain
25
Gain Variance Over Temperature
-30°C to +85°C
2.5
GHz
12
dBm
4
%
2.4GHz to 2.5GHz
28
dB
2.4GHz to 2.5GHz
1.0
±dB
2.4GHz to 2.5GHz
IG
N
Frequency
-27
dBm
Fundamental frequency is between 2400MHz
to 2500MHz (RFPOUT =+10dBm), see note 2
IEEE802.11g Spectral Mask per
FCC Part 15.205
-43
dBm
Amplifier setup for best IEEE802.11g performance; FC=2412MHz; RFPOUT =+10dBm;
IEEE802.11b CCK 11Mbps modulation;
T=+25°C; measured at FC-25MHz
dBm
Amplifier setup for best IEEE802.11g performance; FC=2462MHz; RFPOUT =+10dBm;
IEEE802.11b CCK 11Mbps modulation;
T=+25°C; measured at FC+25MHz
-43
Idle Current
IREG Current
Shutdown Current
Power Detector
POUT =+10dBm
Input Capacitance
mA
POUT =+10dBm at nominal conditions
45
mA
At nominal conditions with no RF
5.5
mA
0.55
A
0.7
V
5
pF
MHz
1.5
1.8
S
Output stable to within 90% of final gain, see
note 1.
N
O
T
FO
Turn-On Time
10
8
R
Bandwidth
0.40
50
N
EW
Operating Current
D
ES
Second Harmonic
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RF5373
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions: VCC =3.1V, VREG =1.75V,
Freq=2.45GHz, Temp=+25°C, unless otherwise specified.
Bluetooth Class 1
2.5
19
Output Power BT version 2.0
16
Large Signal Gain
25
-27
Operating Current
65
Idle Current
45
IREG Current
5.5
Shutdown Current
Meeting Class 1 Bluetooth version 1.2 specification
Meeting Class 1 Bluetooth version 2.0 specification
28
Second Harmonic
GHz
dBm
IG
N
2.4
Output Power BT version 1.2
dB
Measured at rated output power; nominal conditions
dBm
Fundamental frequency is between 2400MHz
to 2500MHz (RFPOUT =+16dBm), see note 2
mA
POUT =16dBm at nominal conditions
D
ES
Frequency
mA
At nominal conditions with no RF
mA
10
Power Supply
VCC Supply Voltage
1.8
3.1
3.6
VREG Voltage
1.6
1.75
1.85
A
V
V
N
EW
Note 1: The PA must operate with gated bias at 1% to 99% duty cycles without any EVM or other parameter degradation with R1=56.
N
O
T
FO
R
Note 2: For best harmonic rejection please refer to the harmonic rejection application schematic.
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DS110618
RF5373
Pin
1
2
3
4
Function
RF IN
N/C
VREG
PDETECT
or NC*
5
6
7
RF OUT
N/C
VCC
8
Pkg
Gnd
N/C
GND
Description
Interface Schematic
RF input pin. See evaluation board schematic for details.
No Connect, this pin may be left as a no connect or connected to ground.
Bias current control voltage for the first and second stages.
Provides an output voltage proportional to the output RF level.
*In applications where the PDETECT is not desired, this pin may be left
unconnected.
RF output.
IG
N
No Connect, this pin may be left as a no connect or connected to ground.
Power supply for both the first and second stage. Connect as shown on the
evaluation board schematic.
No Connect, this pin may be left as a no connect or connected to ground.
D
ES
Ground connection for the device “die flag”. The backside of the package
should be soldered to a top side ground pad which is connected to the PC
board ground plane through multiple vias.
N
O
T
FO
R
N
EW
Package Drawing
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RF5373
Theory of Operation
The RF5373 is a linear driver/amplifier that is designed for the 2.4GHz to 2.5GHz (IEEE802.11b/g and BT Class 1) band. Operating from a single 1.8V to 3.6V supply, the amplifier will easily be incorporated into WiFi designs with minimal external components. The device is provided in a 2.2mmx2.2mmx0.6mm, 8-pin, QFN with a backside ground.
IG
N
The RF5373 is a two-stage device with a nominal gain of 28dB to 29dB in the 2.4GHz to 2.5GHz ISM band. The RF5373 is
designed for multiple applications in the 2.4GHz to 2.5GHz band. The RF5373 requires only a single positive supply of 1.8V to
3.6V to operate to full specification. Power control is provided through one bias control input pin (VREG) which can range from
1.6V nominal and 1.85V maximum. The PA circuit layout from the evaluation board should be copied as closely as possible,
particularly the ground layout and ground vias. Other configurations may also work, but the design process is much easier and
quicker if the layout is copied from the RF5373 evaluation board. Gerber files of our designs are available on request.
D
ES
There are multiple applications where the RF5373 may be implemented, including IEEE802.11b/g and Bluetooth. Please
review the RF5373 schematics for the optimum layout for a specific band. In order to obtain the best performance for an
802.11g application where the PA will be pulsed at <99% duty cycle, R1 must be populated with a 56 resistor. For all other
applications where pulsing is not needed, R1 can be substituted with a 0 or a trace line.
An application schematic for 2.5GHz operation is included that has two additional components, one shunt inductor, and one
shunt capacitor, on the output for improved second harmonic rejection. This layout provides ~20dB rejection at 5GHz with a
minimal BOM count.
N
EW
The RF5373 is not a difficult part to implement, but care in circuit layout and component selection is always advisable when
designing circuits to operate at 2.5GHz. The RF5373 evaluation board layout and schematic is also available using 0201 components which will help shrink the six of the total area of the power amplifier and matching components on the intended
design.
N
O
T
FO
R
Please contact RFMD Sales or Applications Engineering for additional data and guidance.
6 of 13
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110618
RF5373
N/C
VCC
Pin Out
8
7
6 N/C
4
N
O
T
FO
R
N
EW
D
ES
3
PDETECT
5 RF OUT
VREG
N/C 2
IG
N
RF IN 1
DS110618
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 13
RF5373
Application Schematic
IEEE802.11b/g and Bluetooth Class
Low Band Application Schematic for Harmonics Rejection
VCC
R1
IG
N
0.1 F
1.5 nH
1 F
7
D
ES
8
10 pF
RF IN
1
6
Bias
DET
5
3
5373401, r.3
8 pF
N
EW
2
FO
R
1 nF
VREG
330 pF
PDETECT
1.2 nH
0201
RF OUT
2.2 pF*
0201
4
750 
NOTES:
3.6 nH
*The 2.2 pF cap can be placed at the same point
as the 1.2 nH inductor which should be as close as
possible to the DC blocking cap (8 pF) or it can be
placed up to 25 mils away from the inductor for the
best linear performance.
R1
0
56
Application
BT, 802.11 b
Above and 802.11g
N
O
T
1. For VREG that is higher than the nominal voltage specified, a resistor bridge can be used to drop the voltage for VREG
to the appropriate level needed at the pins.
2. This evaluation board schematic and layout are also available using 0201 components. Please contact RFMD applications engineering for
more information.
8 of 13
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110618
RF5373
Evaluation Board Schematic
IEEE802.11b/g and Bluetooth Class 1,
High Pass Output Match Tune
R1
VCC
P1
GND
P1-2
2
VCC
P1-3
3
VCC
C1
0.1 F
IG
N
1
L1
1.5 nH
CON3
C2
1 F
8
7
1
6
Bias
DET
P2
2
1
GND
P2-2
2
PDETECT
P2-3
3
VREG
5
5373401, r.3
R2
0
CON3
C5
1 nF
R3
750 
R1
Application
0
BT, 802.11 b
56
Above and 802.11g
J4
RF OUT
C6
330 pF
R
VREG
NOTES:
50  strip
C4
8 pF
4
N
EW
3
L2
3.6 nH
D
ES
J3
RF IN
C3
10 pF
PDETECT
N
O
T
FO
1. For VREG that is higher than the nominal voltage specified, a resistor bridge can be used to drop the voltage for VREG
to the appropriate level needed at the pins.
2. This evaluation board schematic and layout are also available using 0201 components. Please contact RFMD applications engineering for
more information.
DS110618
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 13
RF5373
Evaluation Board Layout
Board Size 1.2”x1.2”
N
O
T
FO
R
N
EW
D
ES
IG
N
Board Thickness 0.032”, Board Material FR-4
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DS110618
RF5373
EVM versus POUT
-20.0
5.0
-25.0
4.5
-30.0
4.0
-35.0
3.5
-40.0
3.0
-45.0
-50.0
2.0
-55.0
1.5
1.0
ACP1 2400MHz
ACP1 2450MHz
ACP1 2500MHz
2400MHz ACP2
2450MHz ACP2
2500MHz ACP2
-65.0
0.0
-70.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
-1.0
20.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
Output Power (dBm)
Output Power (dBm)
PDETECT versus POUT
Operating Current versus POUT
1.2
60.0
1.0
N
EW
50.0
0.8
PDETECT (V)
40.0
30.0
0.6
0.4
R
20.0
0.0
1.0
3.0
FO
10.0
-1.0
2400MHz
2450MHz
2500MHz
0.5
D
ES
-60.0
ICC (mA)
2.5
IG
N
EVM (%)
ACP (dBm)
ACP versus POUT
5.0
7.0
9.0
0.2
2400MHz
2450MHz
2500MHz
0.0
13.0
15.0
-1.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
Output Power (dBm)
N
O
T
Output Power (dBm)
11.0
2400MHz
2450MHz
2500MHz
DS110618
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RF5373
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch
to 8inch gold over 180inch nickel.
IG
N
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested
for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
D
ES
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
N
O
T
FO
R
N
EW
PCB Metal Land and Solder Mask Pattern
Thermal vias for center slug “C” should be incorporated into the PCB design. The number and size of thermal vias will depend
on the application, the power dissipation, and the electrical requirements. Example of the number and size of vias can be
found on the RFMD evaluation board layout.
12 of 13
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110618
RF5373
RoHS* Banned Material Content
RoHS Compliant:
Yes
Package total weight in grams (g):
0.008
Compliance Date Code:
N/A
Bill of Materials Revision:
A
e3
IG
N
Pb Free Category:
Pa r ts Pe r Mi l l i o n (PPM)
B i l l o f Ma te r i a l s
Cd
Hg
Cr V I
PB B
PB DE
0
0
0
0
0
0
Mo l di ng Co mp o und
0
0
0
0
0
0
Le a d F r a me
0
0
0
0
0
0
Di e Atta ch Ep o x y
0
0
0
0
0
0
Wi r e
0
0
0
0
0
0
So l de r Pl a ti ng
0
0
0
0
0
0
D
ES
Pb
Di e
Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s p r e p a r e d so l e l y o n i nfo r ma ti o n, i ncl udi ng a na l y ti ca l
N
EW
da ta , p r o vi de d to R F MD b y i ts sup p l i e r s, a nd a pp l i e s to the B i l l o f Ma te r i a l s (B OM) r e vi si o n no te d
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the
N
O
T
FO
R
use of certain hazardous substances in electrical and electronic equipment
DS110618
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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