RF2312 0 LINEAR GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than 0.5dB from 5MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The device is self-contained with 75Ω input and output impedances, and requires only two external DC biasing elements to operate as specified. -A0.160 0.152 0.200 0.192 9 GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS 0.010 0.004 0.050 0.248 0.232 8° MAX 0° MIN 0.059 0.057 0.0100 0.0076 0.0500 0.0164 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding flash, protrusions or burrs. 3. Lead coplanarity: 0.005 with respect to datum "A". 4. Package surface finish: Matte (Charmilles #24~27). Optimum Technology Matching® Applied Si BJT 0.018 0.014 Package Style: SOIC-8 Features • DC to well over 2500MHz Operation • Internally Matched Input and Output • 15dB Small Signal Gain • 3.8dB Noise Figure RF IN 1 8 RF OUT GND 2 7 GND GND 3 6 GND GND 4 5 GND • +20dBm Output Power • Single 5V to 12V Positive Power Supply Ordering Information RF2312 RF2312 PCBA RF2312 PCBA Functional Block Diagram Rev C6 051025 Linear General Purpose Amplifier Fully Assembled Evaluation Board - 75Ω Fully Assembled Evaluation Board - 50Ω RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 3-1 RF2312 Absolute Maximum Ratings Parameter Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Rating Unit +18 20:1 -40 to +85 -40 to +150 dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Overall (50Ω) Frequency Range Gain Noise Figure 14.5 Input VSWR Output VSWR 4.3 4.8 2:1 1.4:1 2:1 MHz dB dB dB +42 +36 +33 +22 +21 +18.5 +23 +22.5 +20.5 20 dBm dBm dBm dBm dBm dBm dBm dBm dBm dB ThetaJC 114.9 °C/W Mean Time To Failure ThetaJC 2170 114.05 years °C/W Mean Time To Failure 2170 years 5.5 5.0 100 V V mA Output IP3 Output IP3 Output IP3 Output P1dB Output P1dB Output P1dB Saturated Output Power Saturated Output Power Saturated Output Power Reverse Isolation +40 +33 +30 +21 +20 +17 DC to 2500 15.1 3.8 4.2 1.7:1 Condition T=25°C, VCC =9V, Freq = 900 MHz, RC =30Ω, 50Ω System, PIN =-4dBm 3dB Bandwidth From 50MHz to 300MHz, -30 to +70 °C From 300MHz to 1000MHz, -30 to +70 °C Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. At 100MHz At 500MHz At 900MHz At 100MHz At 500MHz At 900MHz At 100MHz At 500MHz At 900MHz Thermal ICC =100mA, PDISS =0.555W, TAMB =85°C, TJ =149°C No RF Input/Output TAMB =+85°C ICC =120mA, PDISS =0.702W, TAMB =85°C, TJ =165°C No RF Input/Output TAMB =+85°C Power Supply Device Voltage (VD) Operating Current Range 3-2 40 120 On pin 8, ICC =100mA On pin 8, ICC =40mA VCC =9.0V, RC =30Ω Rev C6 051025 RF2312 Parameter Specification Min. Typ. Max. Unit Overall (75Ω) Frequency Range Gain Noise Figure DC to 2500 16 3.8 4.2 1.3:1 4.3 4.8 2:1 Output VSWR 1.2:1 1.75:1 2:1 2:1 Output IP3 Output IP3 Output IP3 Output P1dB Output P1dB Output P1dB Saturated Output Power Saturated Output Power Saturated Output Power Reverse Isolation 1.4:1 1.5:1 +38 +36 +30 +22 +21 +18.5 +23 +22.5 +20.5 20 14.5 Input VSWR +36 +33 +28 +21 +20 +17 MHz dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dB 77 Channels CSO 65 >86 >86 76 72 64 >86 >86 86 84 83 66 dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dB 65 >86 >86 76 70 64 84 86 85 81 80 77 74 66 dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dB CTB CNR 110 Channels CSO CTB Cross Modulation CNR Rev C6 051025 Condition T=25°C, VCC =9V, Freq = 900 MHz, RC =30Ω, 75Ω System 3dB Bandwidth From 50MHz to 300MHz, -30°C to +70°C. From 300MHz to 1000MHz, -30°C to +70°C. From 50MHz to 900MHz, -30°C to +70°C. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. From 50MHz to 300MHz, -30°C to +70°C. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. From 300MHz to 500MHz, -30°C to +70°C. From 500MHz to 900MHz, -30°C to +70°C. At 100MHz At 500MHz At 900MHz At 100MHz At 500MHz At 900MHz At 100MHz At 500MHz At 900MHz 77 Channels to 550MHz at 10dBmV, 33 channels to 760MHz at 0dBmV flat at DUT input 61.25MHz 83.25MHz 193.25MHz 313.2625MHz 547.25MHz 61.25MHz 83.25MHz 193.25MHz 313.2625MHz 547.25MHz 110 Channels, 10dBmV/channel at input 61.25MHz 83.25MHz 193.25MHz 313.2625MHz 547.25MHz 61.25MHz 83.25MHz 193.25MHz 313.2625MHz 547.25MHz 61.25MHz 445.25MHz 3-3 RF2312 Parameter Specification Min. Typ. Max. Unit T=25°C, VCC =9V or 24V, 75Ω System, RFIN =-10dBm Overall (75Ω Push-Pull) Frequency Range Gain Noise Figure Input VSWR Output VSWR Output IP2 Output IP3 Second Harmonic 3-4 Condition DC to 150 15 5.0 1.1:1 1.2:1 +71 +72 +74 +40 +40 +40 -73 -65 -65 MHz dB dB From 5MHz to 150MHz, -30°C to +70°C. dBm dBm dBm dBm dBm dBm dBc dBc dBc At 10MHz At 30MHz At 50MHz At 10MHz At 30MHz At 50MHz At 10MHz At 30MHz At 50MHz Rev C6 051025 RF2312 Pin 1 Function RF IN 2 GND 3 4 5 6 7 8 GND GND GND GND GND RF OUT Rev C6 051025 Description Interface Schematic RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in all applications. The device has internal feedback, and not using a DCblocking capacitor will disable the temperature compensation.The bias of the device can be controlled by this pin. Adding an optional 1kΩ resistor to ground on this pin reduces the bias level, which may be compensated for by a higher supply voltage to maintain the appropriate bias level. The net effect of this is an increased output power capability, as well as higher linearity for signals with high crest factors. DC-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Each ground pin should have a via to the ground plane. Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 2. RF output and bias pin. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. For biasing, an RF choke in series with a resistor is needed. The value for the resistor RC is 30Ω (0.5W) for VCC =9V and 21Ω for VCC =8V. The DC voltage on this pin is typically 6.0V with a current of 100mA. In lower power applications the value of RC can be increased to lower the current and VD on this pin. RF OUT RF IN 3-5 RF2312 Application Schematic 5MHz to 50MHz Reverse Path VCC 30 Ω 10 nF RF IN RS 1 - 2 kΩ 100 nF 100 nF 10 μH 1 RF OUT 8 10 nF 2 7 3 6 4 5 NOTE 1: Optional resistor RS can be used to maintain the correct bias level at higher supply voltages. This is used to increase output capability or linearity for signals with high crest factors. Application Schematic 10dB Gain VCC= 9 - 12 V C3 10 nF C1 220 pF R5 1 - 2 kΩ RF IN L1 330 nH 1 C4 TBD R1 = 21 - 30 Ω R2 470 Ω R6 7.5 Ω RF OUT 8 2 7 3 6 4 5 C2 220 pF R7 7.5 Ω C5 TBD R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2 and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedance matching. R6 and R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness. 3-6 Rev C6 051025 RF2312 Application Schematic Push-Pull Standard Voltage P1 1 GND 2 3 CON3 120 Ω 120 Ω 120 Ω 120 Ω 0.1 uF V U1 F EDGE 616PT1030 1 8 2 7 3 6 4 5 RF2312 616PT1030 U2 V 1 8 2 7 3 6 4 F EDGE 5 RF2312 Rev C6 051025 3-7 RF2312 Application Schematic Push-Pull 24V P1 1 GND 2 3 CON3 120 Ω F EDGE 120 Ω U1 2400 Ω 616PT1030 120 Ω 10 nF 120 Ω 0.1 uF 10 uH 1 8 2 7 3 6 4 5 10 nF 616PT1030 F EDGE 0.1 uF RF2312 10 nF 47 nF 2400 Ω 63 nF 10 uH 120 Ω 120 Ω 120 Ω 120 Ω U2 10 nF 1 8 2 7 3 6 4 5 RF2312 3-8 Rev C6 051025 RF2312 Evaluation Board Schematic - 50Ω (Download Bill of Materials from www.rfmd.com.) P1 H3M P1-1 1 VCC (9 V) 2 GND 3 NC micro strip J1 SMA P1-1 R1 120Ω R2 120Ω R3 120Ω R4 120Ω C2 100 nF C4 100 nF L1 330 nH C1 220 pF 1 OUT 8 2 7 3 6 4 5 C3 220 pF micro strip J2 SMA 2312400A Evaluation Board Schematic - 75Ω P1-1 P1 P1-1 1 VCC 2 GND 3 NC C3 0.1 uF R4 120Ω R1 120Ω R2 120Ω R3 120Ω CON3 J1 F CONN (75Ω) micro strip L1 1000 nH C1 1 nF 1 8 2 7 3 6 4 5 C3 1 nF OUT micro strip J2 F CONN (75Ω) 2312401- NOTE: For 5V applications, R1 to R4 may be removed (shorted). This will result in degraded distortion performance. Rev C6 051025 3-9 RF2312 Evaluation Board Layout - 50Ω 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4 3-10 Rev C6 051025 RF2312 Evaluation Board Layout - 75Ω Standard Voltage 1.40” x 1.40” Board Thickness 0.062”, Board Material FR-4 Rev C6 051025 3-11 RF2312 Evaluation Board Layout - 75Ω Push-Pull, Standard Voltage 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4 3-12 Rev C6 051025 RF2312 Evaluation Board Layout - 75Ω Push-Pull, 24V 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4 Rev C6 051025 3-13 RF2312 POUT versus PIN 500 MHz 20.0 ICC versus Device Voltage (Pin 8) 140.0 Rs=1k No Rs 120.0 15.0 ICC (mA) POUT (dBm) 100.0 10.0 80.0 60.0 40.0 5.0 20.0 0.0 0.0 -15.0 -10.0 -5.0 0.0 4.0 5.0 4.5 5.0 50.0 6.0 6.5 7.0 7.5 8.0 Output P1dB versus Frequency Output Third Order Intercept Point (OIP3) versus PIN 500 MHz 25.0 Vcc=5.0V, Rc=22 Vcc=6.0V, Rc=22 Vcc=7.0V, Rc=22 Vcc=8.0V, Rc=22 Vcc=9.0V, Rc=30 Vcc=11.0V, Rc=30, Rs=1k 20.0 Output P1dB (dBm) 40.0 Output IP3 (dBm) 5.5 Device Voltage (V) PIN (dBm) 30.0 20.0 10.0 15.0 10.0 5.0 0.0 0.0 -15.0 -10.0 -5.0 0.0 5.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) PIN (dBm) IM3 Products versus POUT 500/501 MHz 70.0 60.0 IM3 Products (-dBc) 50.0 40.0 30.0 20.0 10.0 0.0 5.0 10.0 15.0 20.0 25.0 POUT (dBc) 3-14 Rev C6 051025 RF2312 CH1 S 11 1 U FS 4_: 53.809 -24.182 3.464 pF CH1 S 21 log MAG 10 dB/ REF 0 dB 4_: 14.454 dB 1 900.000 000 MHz 1 900.000 000 MHz 1_: 97.188 -1.5742 50 MHz C2 1_: 15.372 dB 50 MHz C2 2_: 93.512 -13.215 450 MHz 2_: 15.307 dB 450 MHz 3_: 15.184 dB 900 MHz 3_: 84.16 -22.945 900 MHz 4 1 2 3 1 2 4 3 START .300 000 MHz STOP 3 000.000 000 MHz START CH1 S 22 1 U FS 4_: 19.802 -16.739 5.0042 pF CH1 .300 000 MHz S 12 STOP 3 000.000 000 MHz log MAG 10 dB/ REF 0 dB 4_:-17.966 dB 1 900.000 000 MHz 1 900.000 000 MHz 1_: 115.2 -6.6211 50 MHz C2 1_:-19.908 dB 50 MHz C2 2_: 87.551 -42.652 450 MHz 2_:-19.87 dB 450 MHz 3_: 52.43 -44.855 900 MHz 3_:-19.554 dB 900 MHz 1 4 2 4 3 1 START .300 000 MHz 3 STOP 3 000.000 000 MHz START Rev C6 051025 2 .300 000 MHz STOP 3 000.000 000 MHz 3-15 RF2312 0.8 2. 0 2. 0 6 0. Swp Max 2.001GHz 0. 4 0. 4 3. 1.0 75 Ohms, ICC = 110 mA, Temp = 25°C Swp Max 2.001GHz 6 0. 0.8 1.0 75 Ohms, ICC = 100 mA, Temp = 25°C 0 0 3. 0 4. 0 4. 5.0 5.0 0.2 0.2 -10.0 -1.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 .0 -2 -0 .6 Swp Min 0.001GHz -1.0 0 .0 -2 -3 . -0.8 .4 -0 -0.8 -4 .0 -5. 0 .4 -0 S[1,1] 2 -0. -4 .0 -5. 0 S[1,1] -0 .6 0.6 S[2,2] 2 -0. 3-16 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 S[2,2] -3 .0 0 10.0 -10.0 0.2 10.0 Swp Min 0.001GHz Rev C6 051025