SGA9189Z - RFMD.com

SGA9189Z
SGA9189Z
Medium Power
Discrete SiGe
Transistor
Medium Power Discrete SiGe Transistor
Package: SOT-89
Product Description
Features
RFMD’s SGA9189Z is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe
HBT) process. The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
Typical Gmax, OIP3, P1dB @ 5V,180mA
GaAs MESFET
InGaP HBT
Gmax (dB)
SiGe BiCMOS
Si BiCMOS

SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
25
23
21
19
17
15
13
11
9
7
5
OIP3
Gmax
P1dB
44
42
40
38
36
34
32
30
28
26
24

50MHz to 3000MHz Operation
39dBm Output IP3 Typ. at
1.96GHz

12.2dB Gain Typ. at 1.96GHz

25.5dBm P1dB Typ. at 1.96GHz

2.1dB NF Typ. at 0.9GHz

Cost-Effective

3V to 5V Operation
Applications
OIP3, P1dB (dBm)
GaAs HBT


Wireless Infrastructure Driver
Amplifiers

CATV Amplifiers

Wireless Data, WLL Amplifiers

AN-021 Contains Detailed Application Circuits
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
GaN HEMT
Frequency (GHz)
RF MEMS
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Maximum Available Gain
20.5
dB
900MHz, ZS = ZS*, ZL = ZL*
Power Gain
13.2
19.0
dB
dB
1960MHz
900MHz [1], ZS = ZSOPT, ZL = ZLOPT
17.5
11.2
12.2
40
23.5
25.5
40.0
Output Power at 1dB Compression
Output Third Order Intercept Point
36.5
20.5
13.2
39.0
2.1
2.6
DC Current Gain
100
180
300
Breakdown Voltage
7.5
8.5
Thermal Resistance
47
Device Operating Voltage
5.5
Operating Current
155
180
195
Test Conditions: VCE = 5V, ICQ = 180mA (unless otherwise noted), TL = 25°C.
[1] 100% Tested [2] Sample Tested
Noise Figure
dB
dBm
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT
dBm
dBm
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT, POUT = +10dBm
per tone
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT
1960MHz
dBm
dB
dB
V
°C/W
V
mA
collector - emitter
junction - lead
collector - emitter
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS121018
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 5
SGA9189Z
Absolute Maximum Ratings
Parameter
Max Base Current (IB)
Max Device Current (ICE)
Max Collector-Emitter Voltage (VCEO)
Max Collector-Base Voltage (VCBO)
Max Emitter-Base Voltage (VEBO)
Max Junction Temp (TJ)
Operating Temp Range (TL)
Rating
Unit
5
mA
200
mA
7
V
20
V
4.8
V
+150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
See Graph
Max Storage Temp
+150
°C
*Note: Load condition1, ZL = 50.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Typical Performance with Engineering Application Circuit
Freq
(MHz)
1
VCE
(V)
ICQ
(mA)
P1dB
(dBm)
945
5
184
25.8
39.5
1960
5
179
25.5
40.0
OIP31
(dBm)
Gain
(dB)
S11
(dB)
S22
(dB)
NF
(dB)
ZSOPT
()
ZLOPT
()
18.8
-14
-26
2.1
6.8 -j0.85
16 + j5.9
12.2
-23
-21
2.4
7.6 - j11.2
22.8 + j0.7
2140
5
180
25.4
39.0
11.3
-20
-14
2.6
18.1 + j3.4
23.8 - j9.0
2440
5
180
25.4
40.0
10.2
-20
-17
2.7
5.6 - j15.1
23.1 - j2.7
POUT = +10dBm per tone for VCE = 5V, 1MHz tone spacing
Typical Performance with Engineering Application Circuit
Freq
(MHz)
VCE
(V)
ICQ
(mA)
P1dB
(dBm)
OIP32
(dBm)
Gain
(dB)
S11
(dB)
S22
(dB)
NF
(dB)
ZSOPT
()
ZLOPT
()
945
3
165
22.1
34.3
17.7
-18
-11
2.1
9.6 - j1.6
11.0 + j1.4
1960
3
162
22.4
35.0
11.8
-18
-16
2.2
7.8 - j13.1
19.3 - j2.9
2440
3
165
23.2
35.3
9.9
-20
-15
2.6
8.1 - j16.0
21.0 - j6.5
2P
OUT
= +6dBm per tone for VCE = 3V, 1MHz tone spacing
Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or
call your local sales representative.
Maximum Recommended Operational
Dissipated Power
Total Dissipated Power (W)
1.20
C
1.00
B
0.80
0.60
ZLOPT
0.40
0.20
ZSOPT
Operational Limit (Tj<130C)
E
0.00
-40
-10
20
50
80
110
140
Lead Temperature (C)
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS121018
SGA9189Z
De-embedded S-parameters
(ZS = ZL = 50, VCE = 5V, ICQ = 185mA, 25°C)
Insertion Gain & Isolation
5
Gain (dB)
25
-15
Isolation
-25
15
Gmax
5
-35
Isolation (dB)
-5
35
Gain vs. Temp (dB)
45
-45
0
1
2
3
4
5
6
7
10
5
0
T = -40, 25, 85°C
-5
-10
Gain
-5
Insertion Gain vs Temperature
30
25
20
15
8
0
1
2
S11 vs Frequency
5
6
7
8
1.0
4 GHz
2.0
2.0
0.5
5 GHz
4 GHz
3 GHz
0.2
4
S22 vs Frequency
1.0
0.5
3
Frequency (GHz)
Frequency (GHz)
5 GHz
3 GHz
2 GHz
0.2
5.0
5.0
2 GHz
8 GHz
8 GHz
1 GHz
1 GHz
0.0
0.2
0.5
1.0
2.0
5.0
0.0
inf
0.2
0.5
1.0
2.0
5.0
inf
S11
0.2
0.2
5.0
5.0
S22
50 MHz
50 MHz
0.5
2.0
0.5
1.0
2.0
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
DC-IV Curves
400
350
Ib = 0.4 - 3.6 mA , 0.4 mA steps
T=25C
IC (mA)
300
250
200
150
100
50
0
0
2
4
6
8
VCE (V)
DS121018
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SGA9189Z
Pin Names and Descriptions
Pin
1
2
3
4
Name
Base
Emitter
Collector
Emitter
Description
RF input.
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible.
RF output.
Same as pin 2.
Recommended Mounting Configuration for Optimum RF and Thermal
Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SOT-89
Package
Machine
Screws
Mounting and Thermal Considerations
It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items
should be implemented to maximize MTTF and RF performance.
1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL]
2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL]
3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as
close to the ground tab (pin 4) as possible. [RECOMMENDED]
4. Use 2 ounce copper to improve the PCB’s heat spreading capability. [RECOMMENDED]
4 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS121018
SGA9189Z
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
2
P1
.016
.019 .118
1
.177 .068
4
3
.161
.096
.041
.015
.059
Part Identification
Ordering Information
Part Number
13” Reel with 3000 pieces
SGA9189ZSQ
Sample Bag with 25 pieces
SGA9189ZSR
SGA9189Z-EVB1
DS121018
Description
SGA9189Z
7” Reel with 100 pieces
870MHz to 960MHz, 8V Operation PCBA
SGA9189Z-EVB2
1930MHz to 1990MHz, 8V Operation PCBA
SGA9189Z-EVB3
2110MHz to 2170MHz, 8V Operation PCBA
SGA9189Z-EVB4
2400MHz to 2500MHz, 8V Operation PCBA
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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