D10040220GT

D10040220GT
D10040220GT
GaAs Power Doubler Hybrid
40MHz to 1000MHz
Package: SOT-115J
The D10040220GT is a Hybrid Power Doubler amplifier
module. The part employs GaAs die and is operated from
40MHz to 1000MHz. It provides excellent linearity and
superior return loss performance with low noise and optimal
reliability.
Features
■
Excellent Linearity
■
Superior Return Loss Performance
■
Extremely Low Distortion
■
Optimal Reliability
■
Low Noise
■
Unconditionally Stable Under All
Terminations
■
22.5dB Min. Gain at 1GHz
■
375mA Max. at 24VDC
Applications
■
40MHz to 1000MHz CATV
Amplifier Systems
Ordering Information
D10040220GT
Box with 50 pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Rating
Unit
75
dBmV
30
V
Storage Temperature
-40 to +100
°C
Operating Mounting Base Temperature
-30 to +100
°C
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implie
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]
®
DS131212
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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D10040220GT
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
General Performance
21.0
21.5
22.0
dB
f = 50MHz
22.5
23.0
24.0
dB
f = 1000MHz
1.0
1.5
2.5
dB
f = 40MHz to 1000MHz
0.8
dB
f = 40MHz to 1000MHz (Peak to Valley)
20.0
dB
f = 40MHz to 320MHz
19.0
dB
f = 320MHz to 640MHz
17.0
dB
f = 640MHz to 870MHz
16.0
dB
f = 870MHz to 1000MHz
20.0
dB
f = 40MHz to 320MHz
19.0
dB
f = 320MHz to 640MHz
18.0
dB
f = 640MHz to 870MHz
17.0
dB
f = 870MHz to 1000MHz
f = 50MHz to 1000MHz
Power Gain
[1]
Slope
Flatness of Frequency Response
Input Return Loss
Output Return Loss
Noise Figure
Total Current Consumption (DC)
5.5
6.5
dB
350.0
375.0
mA
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
Distortion Data 40MHz to 870MHz
CTB
-64
-62
dBc
XMOD
-60
-58
dBc
CSO
-65
-63
dBc
132 ch flat; V0 = 44dBmV[2]
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 132 channels, NTSC frequency raster: 55.25MHz to 865.25MHz, +44dBmV flat output level.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the
carrier being tested.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]
DS131212
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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D10040220GT
Package Drawing (Dimensions in millimeters)
I
U
123 5 7 89
C
E
J
S
P
R
M
K
O
T
Q
øG
N
D
0
B
5 10mm
scale
H
L
F
A
Notes:
European
Projection
Pinning:
Pin
Name
1
Input
2-3
GND
4
5
+VB
6
Nominal
Min
Max
A
44,6 ± 0,2
44,4
44,8
B
13,6 ± 0,2
13,4
44,4
13,8
C
20,4 ± 0,5
19,9
20,9
D
8 ± 0,15
7,85
8,15
E
12,6 ± 0,15
12,45
12,75
F
38,1 ± 0,2
37,9
38,3
G
4 +0,2 / -0,05
3,95
4,2
H
4 ± 0,2
3,8
4,2
I
25,4 ± 0,2
25,2
25,6
J
UNC 6-32
-
-
K
4,2 ± 0,2
4,0
4,4
L
27,2 ± 0,2
27,0
27,4
M
11,6 ± 0,5
11,1
12,1
N
5,8 ± 0,4
5,4
6,2
O
0,25 ± 0,02
0,23
0,27
P
0,45 ± 0,03
0,42
0,48
Q
2,54 ± 0,3
2,24
2,84
R
2,54 ± 0,5
2,04
3,04
S
2,54 ± 0,25
2,29
2,79
7-8
GND
T
5,08 ± 0,25
4,83
5,33
9
Output
U
5,08 ± 0,25
4,83
5,33
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]
DS131212
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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