RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3934 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Package: Hermetic, 2-Pin, Flanged Ceramic Features ■ Broadband Operation DC to 3.5GHz ■ Advanced GaN HEMT Technology ■ Advanced Heat-Sink Technology ■ Small Signal Gain = 13dB at 2GHz ■ 48V Operation Typical Performance Output Power: 140W at P3dB Drain Efficiency = 60% at P3dB -40°C to 85°C Operation Applications ■ Commercial Wireless Infrastructure ■ Cellular and WiMAX Infrastructure ■ Civilian and Military Radar ■ General Purpose Broadband Amplifiers ■ Public Mobile Radios ■ Industrial, Scientific, and Medical Functional Block Diagram Ordering Information RF3934S2 Sample bag with 2 pieces RF3934SB Bag with 5 pieces RF3934SQ Bag with 25 pieces RF3934SR Short Reel with 50 pieces RF3934TR13 13” Reel with 400 pieces RF3934PCBA-411 Fully assembled evaluation board optimized for 2.14GHz; 48V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS131206 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 14 RF3934 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 78 mA 65 V Operational Voltage Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only 1.6 Hours Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. °C/W * MTTF – Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J - C and TC = TCASE Nominal Operating Parameters Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -4.5 Drain Bias Current Frequency of Operation -3.7 48 V -2.5 V 440 DC mA 3500 MHz Capacitance CRSS 9 pF CISS 40 pF C0SS 27.5 pF VG = -8V, VD = 0V DC Functional Test IG (OFF) - Gate Leakage 2 mA VG = -8V, Vd = 0V ID (OFF) - Drain Leakage 2.5 mA VG = -8V, Vd = 48V VGS (TH) - Threshold Voltage -4.2 V VDS (ON) - Drain Voltage at High Current 0.25 V VD = 48V, ID = 20mA VG = 0V, ID = 1.5A RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 14 RF3934 Specification Parameter Unit Min Typ Condition Max RF Functional Test VGSQ -3.4 V Gain 10 12 dB Drain Efficiency 55 60 % -12 dB Input Return Loss RF Typical Performance Small Signal Gain Output Power at P3dB Drain Efficiency at P3dB VD = 48V, ID = 440mA CW, POUT = 50.8dBm, f = 2140MHz Test Conditions: CW operation, VDSQ = 48V, IDQ = 440mA, T = 25°C, Performance in a standard tuned test fixture 21 dB CW, f = 900MHz 13 dB CW, f = 2140MHz 51.60 dBm CW, f = 900MHz 51.46 dBm CW, f = 2140MHz 75 % CW, f = 900MHz 60 % CW, f = 2140MHz RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 14 RF3934 Typical Performance in Standard 2.14GHz Tuned Test Fixture (CW, T = 25°C, unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 14 RF3934 Typical Performance in Standard 2.14GHz Tuned Test Fixture (CW, T = 25°C, unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 14 RF3934 Typical Performance in Standard 900MHz Tuned Test Fixture (CW, T = 25°C, unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 14 RF3934 Typical Performance in Standard 900MHz Tuned Test Fixture (CW, T = 25°C, unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 14 RF3934 Package Drawing (Package Style: Flanged Ceramic) Pin Names and Descriptions Pin Name 1 GATE Gate - VG Input Description 2 DRAIN Drain - VD RF Output 3 SOURCE Source - Ground Base RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 14 RF3934 Bias Instruction for RF3934 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering up the evaluation board. 1. 2. Connect RF cables at RFIN and RFOUT. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. Apply -8V to VG. Apply 48V to VD. Increase VG until drain current reaches desired 440mA bias point. Turn on RF input. 3. 4. 5. 6. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 14 RF3934 2.14GHz Evaluation Board Schematic 2.14GHz Evaluation Board Bill of Materials (BOM) Value Manufacturer Manufacturer’s P/N C1 10pF ATC ATC800A100JT C2, C10, C11, C15 33pF ATC ATC800A330JT C3,C14 0.1µF Murata GRM32NR72A104KA01L C4,C13 4.7µF Murata GRM55ER72A475KA01L C5 100µF Panasonic ECE-V1HA101UP C6 2.0pF ATC ATC800A2R0BT C7 0.3pF ATC ATC800A0R3BT C8 1.5pF ATC ATC800A1R5BT C9 2.7pF ATC ATC800A2R7BT C12 100µF Panasonic EEV-TG2A101M C17 1.8pF ATC ATC800A1R8BT R1 10Ω Panasonic ERJ-8GEYJ100V Not used - - RO4350, 0.030" thick dielectric Rogers - Item C16, C18, C19 PCB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 14 RF3934 2.14GHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source (Ω) Z Load (Ω) 2110 1.58 - j2.56 3.5 - j0.08 2140 1.49 - j2.25 3.46 + j0.38 2170 1.42 - j1.96 3.43 + j0.85 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 14 RF3934 900MHz Evaluation Board Schematic 900MHz Evaluation Board Bill of Materials (BOM) Value Manufacturer Manufacturer’s P/N C1, C2, C10, C11 68pF ATC ATC800A680JT C3, C14 0.1µF Murata GRM32NR72A104KA01L C4, C13 4.7µF Murata GRM55ER72A475KA01L Item C15 Not Populated C6 15pF ATC ATC800A150JT C7 22pF ATC ATC800A220JT C8 12pF ATC ATC800A120JT C9 2.2pF ATC ATC800A2R2BT C12 330µF Panasonic EEU-FC2A331 C5 100µF Panasonic ECE-V1HA101UP R1 10Ω Panasonic ERJ-8GEYJ100V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 12 of 14 RF3934 900MHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source (Ω) Z Load (Ω) 880 1.24 + j3.0 5.49 + j3.4 900 1.14 + j3.63 5.27 + j3.9 920 1.11 + j4.20 5.03 + j4.40 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 13 of 14 RF3934 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (C ISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V GS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade-offs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131206 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 14 of 14