R0605250L R0605250L 25dB Reverse Hybrid 5MHz to 65MHz (Low Current) Package: SOT-115J The R0605250L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides optimal reliability with low noise and is well suited for 5MHz to 65MHz CATV amplifiers for reverse channel systems. Features ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ 25.4dB Typical Gain at 65MHz ■ 140mA Max. at 24VDC Applications ■ 5MHz to 65MHz CATV Amplifier For Reverse Channel Systems Ordering Information R0605250L Box with 50 pieces Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Rating Unit 65 dBmV 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implie RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS140127 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 R0605250L Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 24.5 25.3 24.3 25.4 -0.2 0.1 25.5 dB f = 5MHz dB f = 65MHz 0.5 dB f = 5MHz to 65MHz ±0.2 dB f = 5MHz to 65MHz (peak to valley) Power Gain [1] Slope Flatness of Frequency Response Input Return Loss -20.0 dB Output Return Loss -20.0 dB f = 5MHz to 65MHz Noise Figure Total Current Consumption (DC) 125.0 3.1 3.4 dB 133 140.0 mA f = 65MHz V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 5MHz to 65MHz CTB -69 dBc XMOD -59 dBc CSO -70 dBc 7 ch flat; V0 = 50dBmV[2] 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 7 channels, NTSC frequency raster: T7 - T13 (7.0MHz to 43MHz), +50dBmV flat output level. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140127 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 R0605250L Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 +VB 6 Nominal Min Max A 44,6 ± 0,2 44,4 44,8 B 13,6 ± 0,2 13,4 44,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 G 4 +0,2 / -0,05 3,95 4,2 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140127 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3