SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Features GaAs HBT VCC GaAs MESFET N/C InGaP HBT Active Bias SiGe HBT RFIN GaAs pHEMT Si CMOS Input Match N/C N/C N Si BJT Multi-Carrier Applications AMPS, ISM Applications RFOUT/ VCC EW Si BiCMOS Applications N/C D VBIAS SiGe BiCMOS High Linearity Performance +21dBm IS-95 Channel Power at -55dBc ACP +48dBm OIP3 Typ. On-Chip Active Bias Control Patented High Reliability GaAs HBT Technology Surface-Mountable Plastic Package ES IG Optimum Technology Matching® Applied S RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications. N Product Description GaN HEMT R RF MEMS Min. Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Small Signal Gain Input VSWR Output Third Order Intercept Point Noise Figure Device Current Device Voltage Thermal Resistance (junction-lead) 810 O T 16.2 N Test Conditions: Z0 =50 Specification Typ. FO Parameter 275 4.75 VCC =5V Max. 960 29.5 -57.0 17.2 1.5:1 48.0 7.5 310 5.0 35 -54.0 18.2 330 5.25 °C/W Unit MHz dBm dBc dB dBm dB mA V Condition IS-95 at 880MHz, ±885 KHz, POUT =21dBm 880MHz Power out per tone=+14dBm TL =85°C Temp=25°C RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SPA1118Z Absolute Maximum Ratings Parameter Rating Unit mA Max Supply Current (ICC) at VCC typ. 750 Max Device Voltage (VCC) at ICC typ. 6.0 V Max RF Input Power 24 dBm Max Junction Temp (TJ) +160 °C Max Storage Temp +150 °C 3 MSL Moisture Sensitivity Level Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. N S Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Gain vs. Frequency 22 -50 20 -55 18 D -45 -60 dB dBc IS-95 @ 880 MHz Adj. Channel Pwr. vs. Channel Output Pwr. -65 18 19 20 dBm 21 22 23 85C -4 0 C 10 0 .85 24 0 .8 7 R dBm 28 26 22 O 20 0 .8 5 -1 0 -1 5 -2 0 25 C 0 .9 1 0.9 3 S 22 -3 0 -4 0 C 0 .8 9 S 11 S 12 -2 5 -3 5 -4 0 0 .8 5 0.9 5 0 .8 7 0 .8 9 0 .9 1 0 .9 3 0 .9 5 GHz GHz N 0 .87 0.9 5 0 85 C T 24 0 .9 3 -5 dB FO 30 0 .9 1 Input/Output Return Loss, Isolation vs. Frequency, T=25°C P1dB vs. Frequency 32 0 .8 9 GHz N 17 25C 12 EW -75 16 14 -40C 85C 25C -70 ES IG 850MHz to 950MHz Application Circuit Data, ICC =320mA, VCC =5V Device Current vs. Source Voltage 450 25C -40C 85C 400 350 Device Current (mA) 300 250 200 150 100 50 0 0 1 2 3 4 5 Vcc (V) 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA1118Z Pin 1 Function VCC 2 VBIAS 3 4, 5 6 RF IN NC RF OUT/VCC 7, 8 EPAD NC GND Description Supply voltage for the active bias network. Bypassing in the appropriate location as shown on the application schematic is required for optimum RF performance. Bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration is shown in the application schematic. Bypassing in the appropriate location as shown on the application schematic is required for optimum RF performance. RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. No connection. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin a DC-blocking capacitor should be used in most applications. The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. No connection. N ES IG Recommended Land Pattern S Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern. 0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) 0.140 [3.56] Machine Screws D 0.300 [7.62] 0.050 [1.27] EW 0.080 [2.03] 0.020 [0.51] N Note: DIMENSIONS ARE IN INCHES [MM] N O T FO R Branding Diagram DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SPA1118Z Package Drawing N O T FO R N EW D ES IG N S Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA1118Z 850MHz to 950MHz Application Schematic VCC 10uF, Tantalum 1000pF 392 43pF 8 2 7 3 6 100 nH 22pF S 22pF 1 Z=50 , 17° 5 N 4 ES IG 5.6 pF Evaluation Board Layout D Vcc N EW C2 L1 R1 FO R C1 C3 C4 C5 T Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board O N Note: Pins 4, 5, 7, 8 are not connected internally C6 Vpc Ref. Des. Value Part Number C1, C6 22pF, 5% Rohm MCH18 series C2 10uF, 10% AVX TAJB 106K020R C3 1000pF, 5% Rohm MCH18 series C4 43pF, 5% Rohm MCH18 series C5 5.6pF, ±0.5pF Rohm MCH18 series L1 100nH, 5% Coilcraft 1008HQ series R1 392, 1% Rohm MCR03 series DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SPA1118Z Ordering Information Description SPA1118Z 7” Reel with 500 pieces SPA1118ZSQ Sample bag with 25 pieces SPA1118ZSR 7” Reel with 100 pieces SPA1118Z-EVB1 850MHz to 950MHz PCBA with 5-piece sample bag N O T FO R N EW D ES IG N S Ordering Code 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909