Silicon Photo Darlington in PLCC-2 Package OP580DA Features: x Wide acceptance angle x High Current Gain x Fast Response Time x Plastic leadless chip carrier (PLCC) Description: The OP580DA is an NPN silicon phototdarlington mounted in a miniature SMD package. This device has a flat window lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier which is compatible with most automated mounting equipment. OP580DA are 100% production tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. OP580DA is mechanically and spectrally matched to the OP280 series infrared LEDs. Applications: x Non-contact position sensing x Datum detection Ordering Information Part Number OP580DA x Machine automation x Optical encoders Viewing Angle 100° Sensor Photo Darlington Lead Length N/A OP580DA 1 Polarity Mark 2 DIMENSIONS ARE IN: RoHS Pin # Transistor 1 Collector 2 Emitter [MILLIMETERS] INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A 03/08 Page 1 of 3 Silicon Photo Darlington in PLCC-2 Package OP580DA Absolute Maximum Ratings (TA=25°C unless otherwise noted) -40o C to +100o C Storage Temperature Range -25o C to +85o C Operating Temperature Range 260° C(1) Lead Soldering Temperature Collector-Emitter Voltage 35 V Emitter-Collector Voltage 5V Collector Current 32 mA 100 mW (2) Power Dissipation Electrical Characteristics (TA = 25rC unless otherwise noted) SYMBOL IC(ON) VCE(SAT) ICE0 PARAMETER MIN TYP MAX UNITS 10.0 - - mA Collector-Emitter Saturation Voltage - - 1.7 V IC = 1 mA, EE = 0.15 mW/cm2(3) Collector-Emitter Dark Current - - 1.0 µA VCE = 5.0 V, EE = 0(4) On-State Collector Current TEST CONDITIONS VCE = 5.0 V, EE = 0.15 mW/cm2(3) V(BR)CEO Collector-Emitter Breakdown Voltage 35 - - V IC = 400 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA Rise Time , Fall Time - 50 - µs IC = 1 mA, RL = 1 K tr, tf Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.33 mW/° C above 25° C. 3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formula ICEO = 10(0.04 TA-3/4) where TA is the ambient temperature in ° C. Relative Response vs Angular Position 100 100 80 80 Relative Response (%) Relative Response (%) Relative Response vs Wavelength 60 40 60 40 20 20 0 0 400 500 600 700 800 900 Wavelength (nm) 1000 1100 -90 -60 -30 0 30 60 90 Angular Position (Degrees) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 03/08 Page 2 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Silicon Photo Darlington in PLCC-2 Package OP580DA Relative On-State Collector Current vs Temperature Relative Collector Current-IC (mA) vs. Irradiance-Ee (mW/cm2) 140 Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, = 935nm, TA = 25 °C 35 Normalized at TA = 25° C . Conditions: VCE = 5 V, = 935 nm, TA = 25° C 130 Relative Collector Current (%) Relative Collector Current—IC (mA) 40 30 25 20 15 10 120 110 100 90 80 70 5 0 0.5 1.0 1.5 2.0 -25 0 25 2 Irradiance- Ee (mW/cm ) 75 100 Temperature (°C) Relative On-State Collector Current vs. Collector-Emitter Voltage Collector-Emitter Dark Current vs Temperature 1000 30 Conditions: Ee = 0 mW/ cm2 VCE = 10V IC(ON) - On-State Collector Current Collector-Emitter Dark Current (nA) 50 100 10 1 1.2 mW/ cm2 25 1.0 mW/ cm2 20 0.8 mW/ cm2 17.5 0.6 mW/ cm2 15.0 0.4 mW/ cm2 12.5 0.2 mW/ cm2 10.0 0 -25 0 25 50 Temperature (°C) 75 100 0 0.5 1.0 1.5 2.5 3 Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A 03/08 Page 3 of 3