Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Ceramic surface mount package • Miniature package to minimize circuit Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA Operating Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Storage Junction Temperature (Tstg) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Power Dissipation @ TA = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W Power Dissipation @ TC = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W(1) Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215o C Soldering Temperature (heated collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . 260o C board area • Hermetically sealed • Qualification per MIL-S-19500/255 • Same footprint and pin-out as many SOT-23 package transistors Description The JANTX/TXV2N2222AUB is a miniature hermetically sealed ceramic surface mount general purpose switching transistor. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT-23 devices have been used. The “UB”suffix denotes the 3 terminal chip carrier package, type “B”per MIL-PRF19500/255. Notes: (1) Derate linearly 6.6 mW/o C above 25o C. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 200 mW, TA = 25o C, t =80 hrs. Refer to MILPRF-19500/255 for complete requirements. In addition, the TX and TXV versions are 100% thermal response tested. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-6 (972) 323-2200 Fax (972) 323-2396 Types JANTX, JANTXV-2N2222AUB Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Off Characteristics PARAMETER MIN MAX UNITS TEST CONDITION V(BR)CBO Collector-Base Breakdown Voltage 75 V IC = 10 µA, IE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 50 V IC = 10 mA, IB = 0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 V IE = 10 µA, IC = 0 10 nA VCB = 60 V, IE = 0 10 µA VCB = 60 V, IE = 0, TA = 150o C ICBO Collector-Base Cutoff Current IEBO Emitter-Base Cutoff Current 10 nA VEB = 4 V, IC = 0 ICES Collector-Emitter Cutoff Current 50 nA VCE = 50 V On Characteristics hFE Forward-Current Transfer Ratio 50 - VCE = 10 V, IC = 0.1 mA - VCE = 10 V, IC = 1.0 mA - VCE = 10 V, IC = 10 mA - VCE = 10 V, IC = 150 mA(2) 30 - VCE = 10 V, IC = 500 mA(2) 35 - VCE = 10 V, IC = 10 mA, TA = -55o C 0.30 V IC = 150 mA, IB = 15 mA(2) 1.0 V IC = 500 mA, IB = 15 mA(2) 1.20 V IC = 150 mA, IB = 15 mA(2) 2.0 V IC = 500 mA, IB = 15 mA(2) 75 325 100 100 VCE(SAT) VBE(SAT) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.60 300 Small-Signal Characteristics hfe Small Signal Forward Current Transfer Ratio 50 - VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz IhfeI Small Signal Forward Current Transfer Ratio 2.5 - VCE = 20 V, IC = 20 mA, f = 100 MHz Cobo Open Circuit Output Capacitance 8.0 pF VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHz Cibo Input Capacitance (Output Open) 25 pF VEB = 0.5 V, 100 kHz ≤ f ≤ 1.0 MHz Switching Characteristics ton Turn-On Time 35 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA (2) Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-7 (972) 323-2200 Fax (972) 323-2396