NPN Silicon Phototransistor OP800A, OP800B, OP800C, OP800D Features: • • • • • • Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection Description: The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package offer high power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Applications: • • • • Industrial and commercial electronics Distance sensing Harsh environment Photointerrupters RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A 9/2010 Page 1 of 3 NPN Silicon Phototransistor OP800A, OP800B, OP800C, OP800D Absolute Maximum Ratings (TA=25° C unless otherwise noted) Collector-Base Voltage 30 V Collector-Emitter Voltage 30 V Emitter-Base Voltage 5V Emitter-Collector Voltage 5V 50 mA Continuous Collector Current o Storage Temperature Range -65 C to +150o C Operating Temperature Range -65o C to +125o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(2) 250 mW(3) Power Dissipation Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.5 mW/° C above 25° C. 3. Junction temperature maintained at 25° C. 4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm2 radiant intensity on the unit under test. The intensity level is not necessarily uniform over the lens area of the unit under test. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 9/2010 Page 2 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com NPN Silicon Phototransistor OP800A, OP800B, OP800C, OP800D Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL IC(ON) (3) ICEO PARAMETER MIN TYP MAX UNITS On-State Collector Current OP800D OP800C OP800B OP800A 0.45 0.90 1.80 3.60 - 3.60 5.40 - mA mA mA mA - - 100 nA VCE = 10 V, EE = 0 Collector Dark Current TEST CONDITIONS VCE = 5 V, EE = 0.5 mW/cm2(4 ) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA V(BR)CBO Collector-Base Breakdown Voltage 30 - - V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IE = 100 µA V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - - V IE = 100 µA Collector-Emitter Saturation Voltage - - 0.40 V IC = 0.15 mA, EE = 0.5 mW/cm2(4) Rise Time - 7.0 - µs Fall Time - 7.0 - µs VCC = 5 V, IC = 0.80 mA, RL = 100 Ω (See Test Circuit) VCE(SAT)(3) tr tf OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A 9/2010 Page 3 of 3