Sensing and Control Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) Features: • • • • • Processed to OPTEK’s military screening program, pa erned a er MIL-PRF-19500 Miniature herme cally sealed “pill” package Twice the power output of GaAs at same drive current “S” level screening available Mechanically and spectrally matched to OP600 phototransistors DescripƟon: Each OP223 (TX, TXV) and OP224 (S, TX, TXV) device is an 890 nm high reliability gallium aluminum arsenide infrared emi ng diode that is mounted in a miniature herme cally sealed “pill” type package which can be directly mounted to PCBoards. The gallium aluminum arsenide feature provides twice the radiated output of gallium arsenide at the same forward current. A er electrical tes ng by manufacturing, devices are processed to OPTEK’s 100 percent screening program, which is pa erned a er MIL-PRF-19500. With a wavelength centered at 890 nm, the OP223 (TX, TXV) and OP224 (S, TX, TXV). TX and TXV devices are processed to OPTEK’s military screening program paƩerned aŌer MIL-PRF-19500. S devices are processed to OPTEK’s military screening program paƩerned aŌer MIL-STD-883. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Contact your local representa ve or OPTEK for more informa on. ApplicaƟons: • • • • • • Non-contact reflec ve object sensor Assembly line automa on Machine automa on Machine safety End of travel sensor Door sensor Part Number LED Peak Wavelength OP223TX OP224S Total Beam Angle Lead Length 24° N/A 1.00 mW/cm2 OP223TXV OP224TX Output Power Minimum 890 nm 1.50 mW/cm2 OP224TXV 1 2 Pin # LED Sensor 1 Anode Collector 2 Cathode Emi er DIMENSIONS ARE IN: General Note TT Electronics reserves the right to make changes in product specificaƟon without noƟce or liability. All informaƟon is subject to TT Electronics’ own data and is considered accurate at Ɵme of going to print. © TT electronics plc [MILLIMETERS] INCHES 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www. electronics.com Issue B 07/2015 Page 1 Sensing and Control Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) Electrical SpecificaƟons Absolute Maximum RaƟngs (TA = 25° C unless otherwise noted) Storage Temperature Range -65o C to +150o C Opera ng Temperature Range -55o C to +125o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron](1) 260° C Reverse Voltage 2.0 V Con nuous Forward Current Power Dissipa on 100 mA (2) 100 mW Notes: 1. No clean or low solids. RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 1.00 mW/° C above 25° C. Electrical CharacterisƟcs (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Radiant Power Output OP223 (TX, TXV) OP224 (S, TX, TXV) 1.00 1.50 - - mW IF = 50 mA IF = 50 mA VF Forward Voltage 0.80 - 1.80 V IF = 50 mA IR Reverse Current - - 100 µA VR= 2.0 V λP Wavelength at Peak Emission - 890 - nm IF = 50 mA B Spectral Bandwidth between Half Power Points - 80 - nm IF = 50 mA Spectral Shi with Temperature - 0.18 - nm/°C IF = Constant Emission Angle at Half Power Points - 18 - Degree IF = 50 mA Input Diode EE (APT) ∆λP /∆T θHP General Note TT Electronics reserves the right to make changes in product specificaƟon without noƟce or liability. All informaƟon is subject to TT Electronics’ own data and is considered accurate at Ɵme of going to print. © TT electronics plc 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www. electronics.com Issue B 07/2015 Page 2 Sensing and Control Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 (TX, TXV), OP224 (S) OP223 (TX, TXV), OP224 (S, TX, TXV) Forward Voltage vs Forward Current vs Temperature OpƟcal Power vs IF vs Temperature 3.5 1.8 Normalized at 50 mA and 20° C 1.7 3.0 -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized Optical Power Typical Forward Voltage (V) 1.6 1.5 1.4 1.3 -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C 1.2 1.1 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.9 0 10 20 30 40 50 60 70 80 90 0 100 10 20 30 40 50 60 70 80 90 100 Forward Current IF (mA) Forward Current (mA) Distance vs Output Power vs Forward Current Normalized Intensity vs Beam Angle 1.1 6 Normalized at 1" and 50 mA 1.0 0.9 5 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA 4 3 2 1 Angular Displacement (° Degrees) Normalized Output Power Forward Current 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' Distance (inches) General Note TT Electronics reserves the right to make changes in product specificaƟon without noƟce or liability. All informaƟon is subject to TT Electronics’ own data and is considered accurate at Ɵme of going to print. © TT electronics plc 0.0 -45 -35 -25 -15 -5 5 15 25 35 45 Normalized Intensity 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www. electronics.com Issue B 07/2015 Page 3