Opi120tx.vp:CorelVentura 7.0

Product Bulletin OPI120TX/TXV
September 1996
Hi-Rel Optically Coupled Isolator
Types OPI120TX, OPI120TXV
Features
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
• High current transfer ratio
• 15 kV electrical isolation
• Base lead provided for conventional
Input-to-Output Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 kVDC(1)
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C
Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240o C
transistor biasing
• Components processed to Optek’s
screening program patterned after
MIL-PRF-19500 for TX and TXV
devices
Description
Input Diode
Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW(2)
Output Photosensor
The OPI120TX and OPI120TXV are
optically coupled isolators, each
consisting of a gallium aluminum
arsenide infrared light emitting diode
(OP235TX or OP235TXV) and an NPN
silicon phototransistor (OP804TX or
OP804TXV) sealed in a high dielectric
plastic housing. This series is designed
for applications requiring high voltage
isolation between input and output.
Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW(3)
Notes:
(1) Measured with input leads shorted together and output leads shorted together in air with a
maximum relative humidity of 50%. If suitably encapsulated or oil immersed, the isolation
voltage is increased to at least 25 kV.
(2) Derate linearly 2.0 mW/o C above 25o C.
(3) Derate linearly 2.5 mW/o C above 25o C.
(4) Methanol or isopropanol are recommended as cleaning agents.
High reliability processing is performed at
the component level in accordance with
MIL-PRF-19500 for both the infrared light
emitting diode and the NPN silicon
phototransistor.Typical screening and lot
acceptance tests are provided on page
13-4.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
13-46
(972) 323-2200
Fax (214) 323-2396
Types OPI120TX, OPI120TXV
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
Input Diode
VF
IR
PARAMETER
Forward Voltage(5)
MIN TYP MAX UNITS
TEST CONDITIONS
1.00
1.40
1.70
V
IF = 30 mA
1.20
1.60
1.90
V
IF = 30 mA, TA = -55o C
0.90
1.15
1.50
V
IF = 30 mA, TA = 100o C
0.1
10
µA
VR = 2 V
Reverse Current
Output Phototransistor
V(BR)CBO
Collector-Base Breakdown Voltage
30
40
V
IC = 100 µA, IE = 0, IF = 0
V(BR)CEO
Collector-Emitter Breakdown Voltage
30
40
V
IC = 100 µA, IB = 0, IF = 0
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
V
IE = 100 µA, IC = 0, IF = 0
IC(OFF)
ICB(OFF)
Collector-Emitter Dark Current
0.2
100
nA
VCE = 10 V, IB = 0, IF = 0,
10
100
µA
VCE = 10 V, IB = 0, IF = 0, TA = 100o C
0.1
10.0
nA
VCB = 10 V, IE = 0, IF = 0
2.0
mA
VCE = 5 V, IB = 0, IF = 10 mA
1.2
mA
VCE = 5 V, IB = 0, IF = 10 mA, TA = -55o C
1.2
mA
VCE = 5 V, IB = 0, IF = 10 mA, TA = 100o C
Collector-Base Dark Current
Coupled
IC(ON)
VCE(SAT)
VISO
On-State Collector Current(5)
Collector-Emitter Saturation Voltage
Isolation Voltage (Input to Output)
0.25
15.0
0.30
30.0
V
IC = 2 mA, IB = 0, IF = 20 mA
kV
See Note 1
tr
Output Rise Time
8.0
15.0
µs
VCC = 10 V, IC = 2 mA, RL = 100 Ω
tf
Output Fall Time
8.0
15.0
µs
VCC = 10 V, IC = 2 mA, RL = 100 Ω
(5) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change
in measurement results.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (214) 323-2396
13-47