Silicon Photo Darlington in Miniature 1206 SMD Package OP520DA, OP521DA Features: x x x x x High Photo Sensitivity Fast Response Time 1206 Package Size Opaque or Water Clear Flat Lens High Current Gain Descriptions: The OP520DA and OP521DA are NPN silicon photo darlingtons mounted in miniature 1206 SMD packages. Both the OP520DA and OP521DA have a flat lens however, the OP520DA lens are opaque to shield the device from ambient light unlike the lens of the OP521DA. These sensors are packaged in compact 1206 size chip carriers that are compatible with most automated mounting equipment. The OP520DA and OP521DA are mechanically and spectrally matched to the OP250 series infrared LEDs. Since these devices have a flat window lens, they enable a wide acceptance angle. It is packaged in a plastic leadless chip carrier which is compatible for new applications with that need smaller dimension packages for automated mounting and detection equipment with new innovative designs. OP520DA and OP521DA are 100% production tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than in comparison to the standard phototransistors. Applications x x x x Non-Contact Position Sensing Datum detection Machine automation Optical encoders Part Number Ordering Information Sensor Viewing Angle OP520DA Photo Darlington OP521DA Photo Darlington 150° Lead Length N/A Relative Response vs. Wavelength 100% Relative Response 80% OP5 2 0 D A, OP5 2 1 D A 60% 40% OP521DA OP520DA 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) Pb RoHS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com A subsidiary of TT electronics plc Silicon Photo Darlington in Miniature 1206 SMD Package OP520DA, OP521DA Absolute Maximum RatingsTA = 25o C unless otherwise noted Storage Temperature Range Operating Temperature Range -40° C to +100° C -25° C to +85° C 260° C(1) Lead Soldering Temperature Collector-Emitter Voltage 35V Emitter-Collector Voltage 5V Collector Current 30 mA 100 mW (2) Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (TA = 25rC unless otherwise noted) SYMBOL IC(ON) PARAMETER MIN On-State Collector Current VCE(SAT) ICEO TYP MAX UNITS CONDITIONS mA VCE = 5.0V, Ee = 0.5mW/cm2 (3) 10.0 Collector-Emitter Saturation Voltage 1.7 V IC = 1mA, Ee = 5.0mW/cm2 (3) Collector-Emitter Dark Current 200 nA VCE = 5.0V, Ee = 0 (4) V(BR)CEO Collector-Emitter Breakdown Voltage 35 V IC = 100µA, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5 V IE = 100µA, Ee = 0 nm VCE = 5.0V Spectral range of sensitivity tr, tf 4. 400 1100 OP520DA 700 1100 Rise and Fall Times 50 µs IC = 1mA, RL = 1K Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photo darlington being tested. To Calculate typical collector dark current in µA, use the formula ICEO = 10(0.04 TA-3/4) where TA is the ambient temperature in ° C. Relative Collector Current—IC (mA) 40 35 Relative Collector Current-IC (mA) vs. Irradiance-Ee (mW/cm2) 140% Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, = 935nm, TA = 25 °C 130% Relative Collector Current 3. OP521DA 30 25 20 15 10 5 0 Relative On-State Collector Current vs. Temperature—(TA) Normalized at TA = 25°C . Conditions: VCE = 5V, = 935nm, TA = 25 °C 80°C 120% 110% 100% 90% -40°C 80% 70% 0.5 1.0 1.5 2.0 2 Irradiance- Ee (mW/cm ) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com -25 0 25 50 75 100 Temperature— TA (°C) Issue A 03.08 Page 2 of 4 Silicon Photo Darlington in Miniature 1206 SMD Package OP520DA, OP521DA OP520DA, OP521DA Relative On-State Collector Current vs. Collector-Emitter Voltage 1000 1.2 mW/ cm2 25 Collector-Emitter Dark Current (nA) IC(ON) - On-State Collector Current (mA) 30 Collector-Emitter Dark Current vs. Temperature 1.0 mW/ cm2 20 0.8 mW/ cm2 17.5 0.6 mW/ cm2 15.0 0.4 mW/ cm2 12.5 0.2 mW/ cm2 10.0 Conditions: Ee = 0 mW/cm2 VCE = 10V 100 10 1 0 0 0.5 1.0 1.5 2.5 3 Collector-Emitter Voltage (V) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com -25 0 25 50 75 100 Temperature—(°C) Issue A 03.08 Page 3 of 4 Silicon Photo Darlington in Miniature 1206 SMD Package OP520DA, OP521DA Package Dimensions SENSOR DIE OP520DA, OP521DA 1 2 RECOMMENDED SOLDER PADS [4.60±0.10] .181±.0039 [1.50±0.10] .059±.0039 [1.60±0.10] .063±.0039 PIN FUNCTION 1 Collector 2 Emitter [1.60±0.10] .063±.0039 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue A 03.08 Page 4 of 4