Slotted Optical Switch OPB855 Features: • • • • • Low profile 0.27” (6.86 mm) overall height Printed PCBoard mounting 0.205” (5.21 mm) wide and 0.220 (5.59 mm) deep slot 0.380” (9.65 mm) lead spacing Opaque plastic housing Product Photo Here Description: The OPB855 slotted optical switch consists of an infrared emitting diode and a NPN silicon phototransistor, mounted on opposite sides of a 0.205” (5.21 mm) wide slot in an inexpensive plastic housing. Switching of the phototransistor occurs whenever an opaque object passes through the slot. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Applications: • Non-contact interruptive object sensing • Assembly line automation • Machine automation • Equipment security • Machine safety RoHS Ordering Information Part Number Description OPB855 Pin # Description 1 Anode 2 Cathode 3 Collector 4 Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A .2 3/09 Page 1 of 3 Slotted Optical Switch OPB855 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage & Operating Temperature Range -40°C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] (1) 260° C Input Diode (See OP140 for additional information) Forward DC Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) 1A Reverse DC Voltage 2V Power Dissipation (2) 100 mW Output Phototransistor (See OP550 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5V Collector DC Current Power Dissipation 30 mA (2) 100 mW Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode VF Forward Voltage - 1.30 1.80 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA Collector-Emitter Dark Current - - 100 nA VCE = 10 V, IF = 0, EE = 0 Collector-Emitter Saturation Voltage - - 0.4 V IC = 400 µA, IF = 20 mA 1.50 - 20.0 mA ICEO Combined VCE(SAT) IC(ON) On-State Collector Current VCE = 5 V, IF = 20 mA Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/°C above 25 ° C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) All parameters tested using pulse technique. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A .2 3/09 Page 2 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Slotted Optical Switch OPB855 OPB855 - Flag in Middle of Slot Typical IC(on) Response % 120% 100% 80% 60% 40% Right to Left Left to Right 20% Top to Bottom 0% -0.125 -0.075 -0.025 0 0.025 0.075 0.125 Displacement Distance (inches) Test Schematic OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A .2 3/09 Page 3 of 3