Product Bulletin JANTX, JANTXV, 2N4854U September 1996 Surface Mount NPN/PNP Complementary Transistors Type JANTX, JANTXV, 2N4854U .058 (1.47) Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Ceramic surface mount package • Miniature package to minimize circuit NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDC Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA Operating Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Storage Junction Temperature (Tstg) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Power Dissipation @ TA = 25o C (both transistors driven equally) . . . . . . . . . . . 0.6 W Power Dissipation @ TC = 25o C (both transistors driven equally) . . . . . . . . . 2.0 W(1) Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215o C Soldering Temperature (heated Collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . . 260o C board area required • Hermetically sealed • Per MIL-PRF-19500/421 Description The JANTX2N4854U is a hermetically sealed, ceramic surface mount, complementary transistor pair. The JANTX2N4854U consists of an NPN transistor die and PNP transistor die. This surface mount package is the most recent addition to MIL-PRF-19500/421. The “U”designator denotes the 6 terminal (C-6) leadless chip carrier package option. The miniature six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Notes: (1) Derate linearly 3.4 mW/o C above 25o C. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 300 mW each transistor TA = 25o C. Refer to MIL-PRF-19500/421 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-12 (972)323-2200 Fax (972)323-2396 Types JANTX, JANTXV, 2N4854U Electrical Characteristics (TA = 25o C unless otherwise noted) See Note 3 SYMBOL Off Characteristics PARAMETER MIN MAX UNIT TEST CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage 60 V IC = 10.0 µA, IE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 40 V IC = 10.0 mA, IB = 0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V IE = 10.0 µA, IC = 0 10.0 nA VCB = 50 V, IE = 0 10.0 µA VCB = 50 V, IE = 0, TA = 150o C 10.0 nA VEB = 3.0 V, IC = 0 ICBO IEBO Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics hFE DC Current Transfer Ratio 50 - VCE = 1 V, IC = 150 mA(2) 35 - VCE = 10.0 V, IC = 0.1 mA 50 - VCE = 10.0 V, IC = 1.0 mA 75 - VCE = 10.0 V, IC = 10 mA(2) - VCE = 10.0 V, IC = 150 mA(2) 35 - VCE = 10.0 V, IC = 300 mA(2) 12 - VCE = 10.0 V, IC = 10 mA, TA = -55o C(2) V IC = 150 mA, IB = 15 mA(2) V IC = 150 mA, IB = 15 mA(2) 100 VCE(SAT) Collector-Emitter Saturation Voltage VBE(SAT) Base-Emitter Saturation Voltage 300 0.40 0.8 Small-Signal Characteristics hie Small Signal Common Emitter Input Impedance hoe Small Signal Common Emitter Output Admittance hfe Small Signal Current Transfer Ratio NF Noise Figure IhfeI Small Signal Current Transfer Ratio Cobo Output Capacitance 1.5 9 50 60 2.0 kΩ µmho VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz 300 - 8 db 8.0 - 8.0 pF VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHz f = 1.0 kHz, RG = 1.0 kΩ , IC = 0.1 mA, VCE = 10 V VCE = 20 V, IC = 20 mA, f = 100 MHz Switching Characteristics ton Turn-On Time 45 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA (2) Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% (3) Polarities given are for the NPN device. Reverse polarity on limits and conditions as applicable for the PNP side. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-13 (972)323-2200 Fax (972)323-2396