Silicon Phototransistor OP570 Series OP570 Features: • • • • • SMD plastic package High photo sensitivity Fast response time Choice of four lead configurations IR transmissive plastic package OP573 OP571 OP572 Description: Each device in this series is an NPN silicon phototransistor mounted in an opaque plastic SMD package, with an integral molded lens that enables a narrow acceptance angle and a higher collector current than devices without a lense. The OP570 series has four lead configurations and is compatible with most automated mounting equipment. The OP570 series is mechanically and spectrally matched to the OP270 series infrared LEDs. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: • • • • • • Ordering Information Non-contact position sensing Part Number Datum detection Machine automation OP570 OP571 OP572 OP573 Optical encoders IrDA Reflective and transmissive sensors Sensor Phototransistor Viewing Angle Lead Length 25° Axial Gull Wing Yoke Rev. Gull OP570 OP571 OP571 OP572 1 OP573 Pin # Transistor Collector 1 Emitter 2 2 RoHS RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue 1.1 02/07 Page 1 of 3 Silicon Phototransistor OP570 Series OP573 OP570 DIMENSIONS ARE IN: [MILLIMETERS] INCHES TOLERANCE IS ± .0039 [0.1] OP571 OP572 2 1 Pin # Transistor 1 Collector 2 Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.2 02/07 Page 2 of 4 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Silicon Phototransistor OP570 Series Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -40o C to +85o C Operating Temperature Range -25o C to +85o C Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5V Collector Current 20 mA 260° C(1) Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 130 mW(2) Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS 2.5 - - mA TEST CONDITIONS Input Diode IC (ON) On-State Collector Current VCE = 5.0 V, EE = 5.0 mW/cm2 (1) VCE(SAT) Forward Voltage - - 0.4 V IC = 100 µA, EE = 2.0 mW/cm2 (1) ICEO Reverse Current - - 100 nA VCE = 5.0 V, EE = 0(2) VBR(CEO) Wavelength at Peak Emission 30 - - V IC = 100 µA V(BR)ECO Emission Angle at Half Power Points 5 - - V IE = 100 µA Notes: 1. Light source is an unfiltered GaAl LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04 Ta-3.4) where Ta is the ambient temperature in ° C. 2. To calculate typical collector dark current in µA, use the formula ICEO = 10 160% Relative On-State Collector Current vs. Temperature 140% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 130% 120% Relative Collector Current Relative Collector Current 140% Relative On-State Collector Current vs. Irradiance 100% 80% 60% 40% 20% 0 Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 120% 110% 100% 90% 80% 70% 1.0 2.0 3.0 4.0 5.0 6.0 2 Ee—Irradiance (mW/cm ) 7.0 8.0 -25 0 25 50 75 100 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue 1.2 02/07 Page 3 of 4 Silicon Phototransistor OP570 Series Relative Response vs. Angular Position Relative On-State Collector Current vs. Collector-Emitter Voltage 100% IC(ON) - On-State Collector Current (mA) 2.00 Relative Response 80% 60% 40% 20% 1.80 6 mW/cm2 1.60 5 mW/cm2 1.40 4 mW/cm2 1.20 1.00 3 mW/cm2 0.80 2 mW/cm2 0.60 0.40 1 mW/cm2 0.20 0% -90 -60 -30 0 30 60 90 0 Angular Position (Degrees) 0.3 0.4 0.5 Relative Response vs. Wavelength 100% Conditions: Ee = 0 mW/cm2 VCE = 10V 80% 100 Relative Response Collector-Emitter Dark Current (nA) 0.2 Collector-Emitter Voltage (V) Collector-Emitter Dark Current vs. Temperature 1000 0.1 10 1 40% 20% 0% 0 -25 60% 0 25 50 Temperature—(°C) 75 100 400 500 600 700 800 900 1000 1100 Wavelength (nm) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.2 02/07 Page 4 of 4 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com