Data Sheet - Mini Circuits

Surface Mount
Dual Matched MMIC Amplifier
50Ω
MGVA-62+
0.04 to 3 GHz
The Big Deal
•Excellent gain flatness, ±0.5 dB
• Dual matched amplifier for
push-pull & balanced amplifiers
•High dynamic range
CASE STYLE: DL1020
Product Overview
MGVA-62+ is a dual matched wideband amplifier fabricated using advanced InGap HBT technology,
offering high dynamic range (High IP3 and Low NF) for use in 50 and 75 ohm applications. This model has
demonstrated high IP2 in wideband amplifier evaluation boards. Combining this performance with low noise
figure makes it suitable for use in very high dynamic range amplifiers.
Key Features
Feature
Advantages
Broadband
Covers many communication bands including cellular, cable TV, PCS, SATCOM, WiMAX,
and more.
Excellent Gain Flatness:
±0.5 dB over 0.05-3 GHz
Requires no gain compensation in most wideband applications.
Matched pair for use in high IP3
and IP2 amplifiers
Typical gain match of 0.2 dB and phase match of 0.7°, enables it to be used in push-pull
amplifiers. Outstanding IP2.
High IP2, 70 dBm at 0.9 GHz
(Push-Pull amplifier)
Excellent suppression of unwanted second harmonics in wide band applications
High IP3, up to 38 dBm
Ideal for suppressing unwanted intermods in the presence of multiple carriers, now common
in many communication systems.
High P1dB: Up to 19.8 dBm
High P1dB enables the amplifier to operate in linear region in the presence of strong interfering signals.
Medium Noise Figure: 4.7-5.3 dB
typical
Together with High OIP3/P1dB, results in high dynamic range
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 1 of 5
Surface Mount
Dual Matched MMIC Amplifier
.04-3GHz
Product Features
•Two matched amplifiers in one package
•High IP3, +37.9 dBm at 0.9 GHz
•High IP2, +70 dBm at 0.9 GHz in push-pull configuration
•Gain, 15.7 dB typ at 0.9 GHz
•Excellent Gain flatness, ±0.5 dB (0.05-3 GHz)
• P1dB, +19.6 dBm typ at 0.9 GHz
MGVA-62+
CASE STYLE: DL1020
PRICE: $4.15 ea. QTY. (20)
Typical Applications
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
•SATCOM
•CATV
• FTTH
• Optical networks
•Base station infrastructure
•Balanced amplifiers
• 75 Ohm push-pull and balanced amplifiers
General Description
MGVA-62+ (RoHS compliant) is an advanced ultra-flat gain amplifier fabricated using InGaP HBT technology and offers high dynamic range over a broad frequency range. In addition, the MGVA-62+ has good
input and output return loss over a broad frequency range without the need for external matching components. Lead finish is SnAgNi and is enclosed in a 4.9 x 6 mm MCLP package for good thermal performance.
simplified schematic (each of A1, A2) and pad description
RF IN
A1
RF OUT
& DC IN GND
7
8
RF OUT
and DC IN
A1
RF IN
A2
Pad Number
A2
RF OUT
and DC IN
RF IN GND
1
2
Function
RF OUT
GND & DC IN
6
5
GND RF IN
3
4
Description
RF IN, A1
1
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency
of operation. (see Application circuit, Fig 2.)
RF-OUT and DC-IN,
A1
8
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the
bias connection, as shown in “Recommended Application Circuit”, Fig 2
RF IN, A2
4
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency
of operation. (see Application circuit, Fig 2.)
RF-OUT and DC-IN,
A2
5
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the
bias connection, as shown in “Recommended Application Circuit”, Fig 2
GND
2,3,6,7 & paddle
Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce
ground path inductance for best performance.
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
Enhancement
pseudomorphic
High Electron
Mobility Transistor.
B. Electrical*specifications
andmode
performance
data contained
in this specification
document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
REV. OR
M144389
MGVA-62+
MCL NY
150320
Page 2 of 5
MGVA-62+
Monolithic InGap HBT MMIC Amplifier
Electrical Specifications1 at 25°C, Zo=50Ω and Device Voltage 5V, unless noted
(Specifications (other than Matching or where defined as push-pull) are for each of the two matched amplifiers in the package)
Condition (GHz)
Units
Parameter
Min.
Typ.
Max.
Frequency Range
0.04
—
—
14.1
—
—
—
0.04
0.5
0.9
2.0
2.6
3.0
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output Power @1 dB compression (2,3)
Output IP3 (3)
Noise Figure
Amplitude Unbalance
Matching between A1, A2
Phase Unbalance
0.05-3.0
±0.5
0.04
0.5
0.9
2.0
2.6
3.0
0.04
0.5
0.9
2.0
2.6
3.0
0.04
0.5
0.9
2.0
2.6
3.0
0.04
0.5
0.9
2.0
2.6
3.0
0.04
0.5
0.9
2.0
2.6
3.0
0.04
0.5
0.9
2.0
2.6
3.0
0.04
0.5
0.9
2.0
2.6
3.0
16.7
13.3
12.2
9.3
8.0
7.1
12.5
18.1
19.4
18.2
12.9
10.2
19.8
19.8
19.6
19.4
18.4
17.4
36.3
37.9
37.9
34.3
31.7
29.9
4.7
4.8
4.8
5.1
5.4
5.3
0.0
0.1
0.1
0.1
0.1
0.2
0.0
0.1
0.3
0.7
0.7
0.6
5.0
82
61
0.036
39
—
—
34.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.8
Device Operating Voltage
Device Operating Current (each amplifier)
Device Current Variation vs. Temperature
Device Current Variation vs Voltage
Thermal Resistance, junction-to-ground lead (4)
(1)
(2)
Measured on Mini-Circuits Test Board TB-561-62+, see characterization circuit, Fig 1.
Current increases at P1dB
(3)
(4)
GHz
dB
dB
dB
dB
dBm
—
—
—
—
—
—
dBm
dB
—
—
0.5
—
—
—
—
—
5.0
—
—
—
5.2
92
dB
deg.
V
mA
µA/°C
mA/mV
°C/W
Push-Pull Amplifier Typical Performance (5)
Ratings
Operating Temperature7
3.0
—
—
17.3
—
—
—
Per single ended amplifier
Θjc= (Junction Temperature - 85°C) / (Voltage X sum of current in A1 & A2)
Absolute Maximum Ratings(6)
Parameter
16.7
15.7
15.7
15.8
15.8
15.7
Freq.
GHz
-40°C to 85°C
TB-666-50-62+ (50Ω)
Gain
(dB)
Output IP3
(dBm)
Output IP2
(dBm)
0.04
13.3
36.4
68.7
Storage Temperature
-55°C to 150°C
0.5
13.1
37.0
69.5
Operating Current at 5V
120 mA
0.9
12.9
39.5
70.0
Power Dissipation
0.725 W
2.0
12.7
35.6
50.6
Input Power (CW)
24 dBm
Notes
2.6
12.4
32.3
72.6
DCand
Voltage
5, 8)and conditions not expressly stated in6.0
A. Performance
quality(pads
attributes
this specification document are intended to be excluded and do not form a part of this specification document.
3.0 test performance
11.2 criteria and31.4
68.0
B. Electrical(6)
specifications
performance
data
contained
this specification
document are based on Mini-Circuit’s applicable established
measurement instructions.
Permanent and
damage
may occur
if any
of theseinlimits
are exceeded.
(5)
C. The parts covered
this specification
document
are subject
to Mini-Circuits
(collectively,
“Standard boards
Terms”);TB-666-50-62+
Purchasers of (push-pull
this part are
entitled
These by
ratings
are not intended
for continuous
normal
operation. standard limited warranty and terms and conditionsMeasured
on evaluation
amplifier)
(7)and
to the rights
benefits
contained
therein.
For a pad
full statement
of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Defined
with
reference
to ground
temperature.
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 5
MGVA-62+
Monolithic InGap HBT MMIC Amplifier
Characterization Test Circuit
Vs
Test Board
TB-561-62+
Vd
Mini-Circuits Evaluation Boards, 50Ω Push-Pull Amplifiers
TB-666-50-62+ (MGVA-62+ inside)
Vd
Vs
Fig 1a. Block Diagram of Test Circuit used for characterization. (DUT tested
in Mini-Circuits Test board TB-561-62+, except for IP2).
Gain, Return loss, Output Power at 1dB compression (P1 dB) , output IP3
(OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1MHz apart, 0 dBm/tone at output.
Fig 1b. Block Diagram of Test Set up used for characterization of Gain, IP2,
IP3 of push-pull amplifier. Measured using Agilent’s signal generators E8527D
and Spectrum analyzer N9020A.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 & IP2: Two tones, spaced 1MHz apart, 8 dBm/tone at output.
IP2 is measured at the sum frequency of the tones.
Recommended Application Circuit
Fig 2. Recommended Application Circuit. Mini-Circuits Evaluation Board 50Ω: TB-666-50-62+
Product Marking
MCL
MGVA-62+
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
index over pad 1
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 4 of 5
MGVA-62+
Monolithic InGap HBT MMIC Amplifier
Additional Detailed Technical Information
additional information is available on our dash board. To access this information click here
Data Table
Performance Data
Swept Graphs
S-Parameter (S4P Files) Data Set (.zip file)
DL1020 Plastic package, exposed paddle
Case Style
lead finish: tin-silver over nickel
Tape & Reel
F68
Standard quantities available on reel
7” reels with 20, 50, 100, 200, 500 or 1K devices
Suggested Layout for PCB Design
PL-322
Evaluation Board
TB-666-50-62+ (50Ω)
Environmental Ratings
ENV08T2
ESD Rating
Human Body Model (HBM): Class 1C ( 1000 to <2000V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M2 (100 to <200V) in accordance with ANSI/ESD STM5.2-1999
MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D
MSL Test Flow Chart
Start
Visual
Inspection
Electrical Test
SAM Analysis
Reflow 3 cycles,
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection
Electrical Test
SAM Analysis
Finish
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits
®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 5 of 5