Preliminary HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 5 6 D D 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 MOS1 Source Gate Drain S3 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note 2 ID (pulse) Note 1 IDR IAP Note 4 EAR Note 4 Pch Note 2 Pch Note 3 Tch Tstg Value 100 ±20 4 32 4 — — 2 3 150 –55 to +150 PW ≤ 10 μs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 1 of 7 Unit V V A A A A mJ W W °C °C HAT2058R Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 2 of 7 Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) |yfs| RDS (on) RDS (on) Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 100 ±20 — — 1.0 3 — — — — — — — — — — — Typ — — — — — 5 120 150 420 180 100 10 30 110 60 0.85 75 Max — — 1 ±10 2.5 — 145 180 — — — — — — — 1.1 — Unit V V μA μA V S mΩ mΩ pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VDS = 100 V, VGS = 0 VGS = ±16 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2 A, VDS = 10 V Note 5 ID = 2 A, VGS = 10 V Note 5 ID = 2 A, VGS = 4 V Note 5 VDS = 10 V, VGS = 0 f = 1 MHz VGS = 10 V, ID = 2 A, VDD ≅ 30 V IF = 4 A, VGS = 0 Note 5 IF = 4 A, VGS = 0 diF/dt = 50 A/μs HAT2058R Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 3.0 ive Op ion at Dr ive 1.0 er Op 1 0 Drain Current Dr 2.0 er 0 50 at ion 100 200 150 Ambient Temperature 10 μs 30 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 10 10 PW D C 3 O pe 1 = ra 1 m 0 μs s 10 m tio s n Operation in ( PW N 0.3 this area is ≤ ote 6 10 0.1 limited by RDS (on) s) Ta = 25°C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage Ta (°C) VDS (V) Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 20 10 Pulse Test VDS = 10 V Pulse Test (A) (A) 10 V 16 8 ID 4V 12 6 Drain Current Drain Current ID 6V 8 4 4 25°C 2 Tc = 75°C VGS = 2 V –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.8 0.6 ID = 4 A 0.4 2A 0.2 1A 0 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 3 of 7 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 1.0 1 0.5 0.2 VGS = 4 V 0.1 10 V 0.05 0.02 Pulse Test 0.01 0.1 0.2 0.5 1 2 Drain Current 5 10 20 ID (A) 50 Preliminary Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2058R 0.5 Pulse Test 0.4 4A 0.3 ID = 1 A, 2 A VGS = 4 V 0.2 4A 1 A, 2 A 0.1 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 50 20 Tc = –25°C 10 25°C 5 75°C 2 1 VDS = 10 V Pulse Test 0.5 0.1 0.3 2000 Capacitance C (pF) 500 200 100 50 di / dt = 50 A / μs VGS = 0, Ta = 25°C 3 10 30 100 100 Coss 50 Crss 20 30 40 50 VGS 12 8 80 40 4 VDD = 80 V 50 V 25 V 0 8 16 Gate Charge 24 0 32 Qg (nc) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 4 of 7 40 1000 Switching Time t (ns) 16 VDS 0 200 Switching Characteristics VDD = 80 V 50 V 25 V 120 Ciss Dynamic Input Characteristics ID = 4 A 160 500 Drain to Source Voltage VDS (V) 20 200 100 Reverse Drain Current IDR (A) VGS (V) VDS (V) Drain to Source Voltage 1 30 1000 20 VGS = 0 f = 1 MHz 10 0 10 Gate to Source Voltage Reverse Recovery Time trr (ns) 5000 0.3 10 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time 20 1 300 td(off) 100 30 tf tr td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2058R Preliminary Reverse Drain Current IDR (A) 10 Pulse Test 8 6 10 V VGS = 0, –5 V 4 5V 2 0 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage 2.0 2.5 IAP = 4 A VDD = 50 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω 2.0 1.5 1.0 0.5 0 25 50 75 100 125 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 ot pu D= PDM lse 100 μ PW T PW T h 1s 0.0001 10 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.0001 10 μ D= PDM e uls 0.001 tp 100 μ PW T PW T ho 1s 1m 10 m 100 m 1 Pulse Width PW (S) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 5 of 7 150 Channel Temperature Tch (°C) VSD (V) 10 100 1000 10000 HAT2058R Preliminary Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 • L • IAP2 • 2 EAR = VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td(on) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 6 of 7 10% tr 90% td(off) tf HAT2058R Preliminary Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part Name HAT2058R-EL-E Quantity 2500 pcs REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 7 of 7 Shipping Container Taping D E A2 A1 A bp b1 c c1 Dimension in Millimeters Min Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 8° 0° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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