Solid State Devices, Inc. ISO 9001:2008 & AS9100:2009 Rev. C www.ssdi-power.com | (562) 404-4474 Solid State Devices, Inc. Company Overview Heritage Founded in 1967 and privately held, SSDI has been committed to the high reli- ability aerospace market for over 45 years. Each member of the technical management team averages over 20 years of industry experience. Leader in High Reliability Semiconductors Power and high voltage discretes and assemblies. SSDI is an ISO 9001:2008 and AS9100:2009 Rev. C facility. Solution Focused SSDI is dedicated to provide unique solutions for obsolescence, reliability, performance, and other custom high reliability applications. Custom Discretes, Modules & Assemblies SSDI leverages a unique offering of discrete components with over 45 years of power and high Sales by Sector voltage module experience, providing value added, integrated solutions. Deliver Value Quality, reliability, delivery, performance, service. 54% Defense 41% Space Growth and Strength Strong steady growth, capable of doubling current manufacturing and support capacity. 5% Hi Rel Industrial Testing / Qualification Capabilities MIL-PRF-19500 / MIL-STD-883 / MIL-STD-750 / MIL-STD-202 / ESA / SCC-5000 / MIL-M-38510 Components ▪▪ Hermeticity ▪▪ PIND Testing ▪▪ Reverse Energy Transient Test ▪▪ Current Surge Test ▪▪ HTRB ▪▪ Real Time X-Ray ▪▪ Parametric Testing ▪▪ Power Burn-In ▪▪ Power Cycling ▪▪ Thermal Response ▪▪ ESD Modules Environmental ▪▪ Corona AC & DC ▪▪ HIPOT AC & DC ▪▪ Performance Test ▪▪ Static & Dynamic ▪▪ Power Cycling ▪▪ Burn-In ▪▪ Real Time X-Ray ▪▪ Insulation Resistance ▪▪ Temperature Cycling ▪▪ Thermal Shock ▪▪ Humidity ▪▪ High Temp Storage ▪▪ Salt Spray / Atmosphere ▪▪ Moisture Resistance ▪▪ Hot / Cold Temp Bath ▪▪ Barometric Pressure SSDI Advantages ▪▪ Flexible supplier ▪▪ Standard or custom solutions ▪▪ Small quantities welcomed ▪▪ Samples available ▪▪ Broad hermetic packaging capacity ▪▪ Partner on the design, manufacturing, and testing ▪▪ Product availability for the life of the program ▪▪ Solutions for obsolescence and DMS ▪▪ On time delivery of high reliability products Outside Processing ▪▪ Hermeticity ▪▪ Vibration ▪▪ Shock ▪▪ Acceleration ▪▪ RGA ▪▪ Radiography ▪▪ Radiation Testing ▪▪ SEM / WLAT ▪▪ RF Testing Product Centers Hermetic COTS Microelectronics Power and HV Modules SSDI Rectifiers, Schottkys, Zeners & TVS (Hermetic Cavity Devices) State of the Art Products ▪▪ ASPDs (Application Specific Power Devices) ▪▪ Axial Leaded & Surface Mount Rectifiers ▪▪ Battery Bypass Modules ▪▪ Bipolar Products ▪▪ Centertaps & Bridges ▪▪ Custom Products (per customer requirements) ▪▪ DC-DC Converters ▪▪ High Voltage Rectifiers & Assemblies ▪▪ IGBTs ▪▪ MOSFETs / JFETs ▪▪ Power Hybrids ▪▪ Power Modules ▪▪ Rectifiers ▪▪ Schottkys and Schottky Assemblies ▪▪ Silicon Carbide Schottky Rectifiers (SiC) ▪▪ Small Signal Transistors ▪▪ Thyristors / SCRs ▪▪ TVS and Zener Assemblies ▪▪ Voltage Regulators ▪▪ Zeners Obsolete & DMS Support ▪▪ Bipolar Transistors ▪▪ Darlingtons ▪▪ Linear Voltage Regulators ▪▪ PUTs ▪▪ Rectifiers ▪▪ Reverse Engineering ▪▪ RF Products ▪▪ SCRs ▪▪ TVS ▪▪ UJTs ▪▪ Zeners Notes: Minimum order may apply. Most products available in die form. For additional information and data sheets: 14701 Firestone Blvd. La Mirada, CA 90638 | (562) 404-4474 | FAX (562) 404-1773 | [email protected] | www.ssdi-power.com 2 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers ▪▪ Product Family Overview and Features................................................................................4 ▪▪ SPD1502 thru SPD2002.........................................................................................................5 ▪▪ SSR04150S.22 / -4 thru SSR04200S.22 / -4..........................................................................6 ▪▪ SSR04150CTS.22 thru SSR04200CTS.22..............................................................................7 ▪▪ SSR08150S.22 thru SSR08200S.22.......................................................................................8 ▪▪ SSR08150CTS.22 thru SSR08200CTS.22..............................................................................9 ▪▪ SSR08150CT-6 thru SSR08200CT-6.....................................................................................10 ▪▪ SED10HB / HE / HF200.........................................................................................................11 ▪▪ SSR10150G / S.5 thru SSR10200G / S.5..............................................................................12 ▪▪ SSR10150J thru SSR10200J...............................................................................................13 ▪▪ SSR20150CTG / S.5 thru SSR20200CTG / S.5.....................................................................14 ▪▪ SED40KB / KE / KF200 and SSR40G200..............................................................................15 ▪▪ SSR40150J and SSR40200J................................................................................................16 ▪▪ SSR80150CTM / Z thru SSR80200CTM / Z..........................................................................17 ▪▪ SED100LB / LE / LT150 thru SED100LB / LE / LT200...........................................................18 ▪▪ High Reliability Screening...................................................................................................19 ▪▪ Sales Reps / Directions to SSDI............................................................................back cover NOTE: TX, TXV, and S-level screening available for all devices. Screening based on MIL-PRF-19500. Screening flows available on request. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for errors or omissions. Solid State Devices, Inc. reserves the right to make changes without further notice to any product herein. Solid State Devices, Inc. does not assume liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. ™ Solid State Devices, Inc. and are registered trademarks of Solid State Devices, Inc. Solid State Devices, Inc. is an Equal Opportunity/Affirmative Action Employer. Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact SSDI. SSDI components may be used in life-support devices or systems only with the express written approval of SSDI. Failure of such components can be reasonably expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intentionally implanted in a human body, or used to support and/or maintain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 200 Volt Hermetic Silicon Schottky Rectifiers Version 1.10 (06/24/2015) - Entire contents copyright © 2015 Solid State Devices, Inc. All Rights Reserved. No part of this catalog may be reproduced, transmitted, rewritten, scanned, stored mechanically or electronically, translated into other languages, or adapted for any use without the express written permission of Solid State Devices, Inc. 200 Volt Hermetic Silicon Schottky Rectifiers 3 Product Family Overview & Features 200 Volt Hermetic Silicon Schottky Rectifiers Product Family Hermetic Packaging Options TO-254Z Sedpack 2 TO-254 Sedpack 1 SMD.5 LCC6 TO-257 SMD.22 LCC4 Cerpack Sedpack 3 SM SMS Axial Lead Solid State Devices, Inc. (SSDI) is excited to announce its new additions to the 200 volt silicon Schottky rectifier product family initially introduced in November 2011. This product line delivers the highest voltage ratings in the industry for hermetically sealed silicon Schottky devices. With the latest Schottky products, this family now features a current range of 2 amps to 100 amps. Higher current versions are currently in development and expected to be released in 2013. The key advantages of this high voltage product family include an extremely low forward voltage drop, low reverse leakage, high peak surge current, low thermal resistance, and the availability of single die or dual centertap configurations. In addition to their electrical advantages, many of these new Schottky rectifiers are available in hermetic surface mount packages with extremely small footprints and low profiles. For example, the maximum dimensions for the SMD.22 are 0.157” (W) x 0.227” (L) x 0.075” (H). These devices are also available to be screened at TX, TXV, or S level. Screening is based on MIL-PRF-19500 and screening flows are available on request. For more information or to request samples, contact SSDI at (562) 404-4474 or visit www.ssdi-power. com. 4 Features ▪▪ High voltage ratings: up to 200 volts ▪▪ Output current range: 2 amps to 100 amps ▪▪ Low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Guard ring for overvoltage protection ▪▪ Hermetically sealed packages - surface mount packaging options available ▪▪ Single die and dual centertap configurations available ▪▪ TX, TXV, and S level screening available Single Die Configurations Maximum Ratings and Electrical Characteristics (V) VR (A) IO IFSM (A) (V) VF Package SPD2002 Series 150 - 200 2 40 0.95 @ 2A Axial lead / SMS / SM SSR04200S.22 Series 150 - 200 4 50 1.00 @ 4A SMD.22 SSR04200-4 Series 150 - 200 4 50 1.00 @ 4A LCC4 SSR08150S.22 Series 150 - 200 8 80 0.95 @ 8A SMD.22 Part Number SED10HB200 Series 200 10 100 0.78 @ 10A Sedpack 1 SSR10200G / S.5 Series 150 - 200 10 100 0.84 @ 10A Cerpack / SMD.5 SSR10200J Series 150 - 200 10 100 0.90 @ 10A TO-257 SED40KB200 & SSR40G200 Series 150 - 200 40 500 0.95 @ 40A Sedpack 2 / Cerpack SSR40200J Series 150 - 200 40 250 1.20 @ 40A TO-257 SED100LB200 Series 150 - 200 100 1000 0.93 @ 100A Sedpack 3 Dual Centertap Configurations Maximum Ratings and Electrical Characteristics (*per leg) (V) (A) IO* IFSM* VF* Package SSR04200CTS.22 Series 150 - 200 2 20 0.95 @ 2A SMD.22 SSR08200CTS.22 Series 150 - 200 4 40 0.95 @ 4A SMD.22 SSR08200CT-6 Series 150 - 200 4 50 1.00 @ 4A LCC6 SSR20200CTG Series 150 - 200 10 100 1.00 @ 10A Cerpack SSR20200CTS.5 Series 150 - 200 10 100 1.00 @ 10A SMD.5 SSR80200CTM / Z Series 150 - 200 40 250 1.05 @ 40A TO-254 / TO-254Z Part Number 200 Volt Hermetic Silicon Schottky Rectifiers VR (A) (V) Jump to Table of Contents SPD1502 thru SPD2002 Series 150 - 200 Volts, 2 Amps Schottky Rectifiers ▪▪ Extremely low forward voltage drop: 0.95V max @ 2A, 25°C ▪▪ Low reverse leakage current ▪▪ High surge capacity ▪▪ Hermetically sealed package ▪▪ Possible replacement for 1N5802 - 1N5806 Series ▪▪ Category III metallurgical bond per MIL-PRF-19500 appendix A ▪▪ TX, TXV, and S level screening available - consult factory Axial Lead Surface Mount Round Tab (SM) MAXIMUM RATINGS1/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 2 Amps IFSM 40 Amps TOP & TSTG -55 to +150 °C RθJL RθJE 70 50 °C/W SPD1502 SPD2002 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TL or TE = 55°C Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C Operating & Storage Temperature Junction to Lead, L = .25” (Axial Lead) Junction to End Tab (Surface Mount) Thermal Resistance ELECTRICAL CHARACTERISTICS Surface Mount Square Tab (SMS) SYMBOL MIN MAX UNIT Instantaneous Forward Voltage Drop TJ=25°C, 300 - 500 µsec pulse IF=0.5A IF=1A IF=2A VF1 VF2 VF3 - 0.78 0.85 0.95 Volts Instantaneous Forward Voltage Drop TJ=-55°C, 300 - 500 µsec pulse IF=1A VF4 - 1.10 Volts Instantaneous Forward Voltage Drop TJ=100°C, 300 - 500 µsec pulse IF=1A VF5 - 0.78 Volts IR1 - 100 µA IR2 - 2 mA CJ - 40 pF Reverse Leakage Current VR =Rated VR, TA=25°C, 300 µsec pulse minimum Reverse Leakage Current VR =Rated VR, TA=100°C, 300 µsec pulse minimum B Junction Capacitance VR =10 VDC, TA=25°C, f=1 MHz Axial C ØB ØD C A Surface Mount Round Tab (SM) C ØA D B DIM MIN MAX A .095” .105” B .190” .210” C .015” .025” D .002” -- A DIM MIN MAX A .155” .185” B .080” .107” C 1.00” -- D .028” .032” B B D 2x C Surface Mount Square Tab (SMS) DIM MIN MAX A .200” .235” B .125” .135” C .020” .030” D .002” -- 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 5 SSR04150S.22 / -4 thru SSR04200S.22 / -4 150 - 200 Volts, 4 Amps Hermetic Surface Mount Schottky Rectifier ▪▪ Extremely small footprint ▪▪ Extremely low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory LCC4 (-4) SMD.22 (S.22) MAXIMUM RATINGS1/2/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 4 Amps IFSM 50 Amps TOP & TSTG -65 to +175 °C RθJC 8 (typ 6.5) °C/W SSR04150 SSR04200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C Operating & Storage Temperature Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS2/ SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=0.1A IF=0.5A IF=1A IF=2A IF=4A VF1 VF2 VF3 VF4 VF5 - 0.57 0.72 0.77 0.84 0.92 0.80 0.85 1.00 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=1A IF=2A IF=4A VF6 VF7 VF8 - 0.92 1.11 1.45 - Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=0.1A IF=0.5A IF=1A IF=2A IF=4A VF9 VF10 VF11 VF12 VF13 - 0.43 0.56 0.62 0.70 0.79 0.65 0.71 0.88 Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.15 2 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 30 - µA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 150 200 µA Reverse Leakage Current Rated VR, TA=150°C, 300 µsec pulse minimum IR4 - 600 - µA CJ - 21 16 25 pF VR =5V VR =10V Junction Capacitance TA=25°C, f=1 MHz Case Outline: SMD.22 (S.22)2/ Pin Out: Pin 1: Cathode Pin 2: Anode 3 Pin 3: Anode Case Outline: LCC4 (-4)2/ Pin Out: Pin 1: Cathode Single die Pin 2: Anode LCC4 Pin 3: Anode .065±.010 1 .134 .030 .052 .220±.007 .140 .150 ±.007 .225 .215 .160 .145 .076 .060 .048 .032 3 4 2 1 .050 REF 4x .025 REF 2 PIN 1 INDENTIFIER .070 .090 .048 .032 .088 .072 .005 TYP 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 2/ SMD.22: For optimal performance, connect anode terminals together. LCC4: For optimal performance, connect anode terminals together and cathode terminals together. 6 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents SSR04150CTS.22 thru SSR04200CTS.22 150 - 200 Volts, 4 Amps Hermetic Surface Mount Centertap Schottky Rectifier SMD.22 (S.22) ▪▪ Extremely small footprint ▪▪ Extremely low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory MAXIMUM RATINGS1/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 2 Amps IFSM 20 Amps TOP & TSTG -65 to +175 °C RθJC 16 (typ 12) °C/W SSR04150 SSR04200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C, per leg Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C, per leg Operating & Storage Temperature Thermal Resistance Junction to case, per leg ELECTRICAL CHARACTERISTICS (PER LEG) SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=0.1A IF=0.5A IF=1A IF=1.5A IF=2A VF1 VF2 VF3 VF4 VF5 - 0.650 0.770 0.825 0.865 0.900 0.820 0.870 0.950 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=1A IF=2A VF6 VF7 - 1.030 1.340 - Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=0.1A IF=0.5A IF=1A IF=1.5A IF=2A VF8 VF9 VF10 VF11 VF12 - 0.490 0.615 0.685 0.730 0.770 0.690 0.760 0.850 Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.075 1 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 12 - µA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 55 200 µA Reverse Leakage Current Rated VR, TA=150°C, 300 µsec pulse minimum IR4 - 250 - µA CJ - 21 16 25 pF Junction Capacitance TA=25°C, f=1 MHz VR =5V VR =10V Case Outline: SMD.22 (S.22) Pin Out: Pin 1: Cathode Pin 2: Anode 1 Pin 3: Anode 2 Note: For optimal performance, connect anode terminals together .220±.007 .065±.010 3 1 .134 .030 .052 .140 .150 ±.007 2 .070 .090 .005 TYP 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 7 SSR08150S.22 thru SSR08200S.22 150 - 200 Volts, 8 Amps Hermetic Surface Mount Schottky Rectifier SMD.22 (S.22) ▪▪ Extremely small footprint ▪▪ Extremely low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory MAXIMUM RATINGS1/2/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 8 Amps IFSM 80 Amps TOP & TSTG -65 to +175 °C RθJC 5 (typ 3.5) °C/W SSR08150 SSR08200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C Operating & Storage Temperature Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS2/ SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=0.4A IF=2A IF=4A IF=6A IF=8A VF1 VF2 VF3 VF4 VF5 - 0.650 0.770 0.825 0.865 0.900 0.820 0.870 0.950 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=4A IF=8A VF6 VF7 - 1.030 1.340 - Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=0.4A IF=2A IF=4A IF=6A IF=8A VF8 VF9 VF10 VF11 VF12 - 0.490 0.615 0.685 0.730 0.770 0.690 0.760 0.850 Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.3 5 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 50 - µA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 200 1000 µA Reverse Leakage Current Rated VR, TA=150°C, 300 µsec pulse minimum IR4 - 1000 - µA CJ - 90 65 100 pF Junction Capacitance TA=25°C, f=1 MHz VR =5V VR =10V Case Outline: SMD.22 (S.22) Pin Out: Pin 1: Cathode Pin 2: Anode Pin 3: Anode Note: For optimal performance, connect anode terminals together .220±.007 .065±.010 3 1 .134 .030 .052 .140 .150 ±.007 2 .070 .090 .005 TYP 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 2/ For optimal performance, connect anode terminals together. 8 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents SSR08150CTS.22 thru SSR08200CTS.22 150 - 200 Volts, 8 Amps Hermetic Surface Mount Centertap Schottky Rectifier SMD.22 (S.22) ▪▪ Extremely small footprint ▪▪ Extremely low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory MAXIMUM RATINGS1/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 4 Amps IFSM 40 Amps TOP & TSTG -65 to +175 °C RθJC 8 (typ 6.5) °C/W SSR08150 SSR08200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C, per leg Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C, per leg Operating & Storage Temperature Thermal Resistance Junction to case, per leg ELECTRICAL CHARACTERISTICS (PER LEG) SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=0.2A IF=1A IF=2A IF=3A IF=4A VF1 VF2 VF3 VF4 VF5 - 0.650 0.770 0.825 0.865 0.900 0.820 0.870 0.950 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=2A IF=4A VF6 VF7 - 1.030 1.340 - Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=0.2A IF=1A IF=2A IF=3A IF=4A VF8 VF9 VF10 VF11 VF12 - 0.490 0.615 0.685 0.730 0.770 0.690 0.760 0.850 Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.15 2 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 20 - µA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 100 500 µA Reverse Leakage Current Rated VR, TA=150°C, 300 µsec pulse minimum IR4 - 500 - µA CJ - 42 32 50 pF Junction Capacitance TA=25°C, f=1 MHz VR =5V VR =10V Case Outline: SMD.22 (S.22) Pin Out: Pin 1: Cathode Pin 2: Anode 1 Pin 3: Anode 2 Note: For optimal performance, connect anode terminals together .220±.007 .065±.010 3 1 .134 .030 .052 .140 .150 ±.007 2 .070 .090 .005 TYP 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 9 SSR08150CT-6 thru SSR08200CT-6 150 - 200 Volts, 8 Amps Hermetic Surface Mount Schottky Rectifier LCC6 (-6) ▪▪ Extremely small footprint ▪▪ Extremely low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory MAXIMUM RATINGS1/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 4 Amps IFSM 50 Amps TOP & TSTG -65 to +175 °C RθJC 10 (typ 7.5) °C/W SSR08150 SSR08200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C, per leg Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C, per leg Operating & Storage Temperature Thermal Resistance Junction to case, per leg ELECTRICAL CHARACTERISTICS (PER LEG) SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=0.1A IF=0.5A IF=1A IF=2A IF=4A VF1 VF2 VF3 VF4 VF5 - 0.57 0.72 0.77 0.84 0.92 0.80 0.85 1.00 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=1A IF=2A IF=4A VF6 VF7 VF8 - 0.92 1.11 1.45 - Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=0.1A IF=0.5A IF=1A IF=2A IF=4A VF9 VF10 VF11 VF12 VF13 - 0.43 0.56 0.62 0.70 0.79 0.65 0.71 0.88 Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.15 2 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 30 - µA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 150 200 µA Reverse Leakage Current Rated VR, TA=150°C, 300 µsec pulse minimum IR4 - 600 - µA CJ - 21 16 25 pF Junction Capacitance TA=25°C, f=1 MHz VR =5V VR =10V Case Outline: LCC6 (-6) Pin Out: Pin 2 & 3: Cathode Pin 1 & 6: Anode 1 Pin 4 & 5: Anode 2 Note: For optimal performance, connect anode terminals together and cathode terminals together .250 .240 .175 .160 .077 .063 2x .050 (=.100) .072 .058 .097 .083 5 6 4 1 3 2 4x .025 REF 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 10 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents SED10HB200, SED10HE200, and SED10HF200 200 Volts, 10 Amps Surface Mount Schottky Rectifier Sedpack 1 (HB) ▪▪ Low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory Sedpack 1 (HE / HF) MAXIMUM RATINGS1/ SYMBOL VALUE UNIT VRRM VRWM VR 200 Volts IO 10 Amps IFSM 100 Amps TOP & TSTG -55 to +175 °C RθJC 2 (typ 1.6) 2 (typ 1.6) 5.00 °C/W Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=100°C Peak Surge Current 8.3 msec pulse, half sine wave, 1 pulse, TA=25°C Operating & Storage Temperature Thermal Resistance Junction to case SED10HB200 SED10HE200 SED10HF200 ELECTRICAL CHARACTERISTICS SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=5A IF=10A IF=20A VF1 VF2 VF3 - 0.75 0.78 0.85 0.80 0.85 0.95 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=5A IF=10A IF=20A VF5 VF6 VF7 - 0.92 1.00 1.24 - Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=5A IF=10A IF=20A VF8 VF9 VF10 - 0.61 0.68 0.76 0.70 0.75 - Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.7 10 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 0.2 - mA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 0.85 5 mA CJ - 185 135 225 - pF VR =5V VR =10V Junction Capacitance TA=25°C, f=1 MHz Case Outline: Sedpack 1 HB Case Outline: Sedpack 1 HE .225±.010 .225 ±.010 .225±.010 .225 ±.010 ANODE Case Outline: Sedpack 1 HF .125±.020 .225±.010 .150 ±.005 ANODE .225 ±.010 .125±.020 .100 ±.005 ANODE R.025 TYP R.025 TYP .095 MAX CATHODE .095 MAX .185±.005 SQ. CATHODE .095 MAX .185±.005 SQ. .008 .005 .065±.010 CATHODE .185±.005 SQ. .008 .005 .065±.010 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 11 SSR10150G / S.5 thru SSR10200G / S.5 150 - 200 Volts, 10 Amps Surface Mount Schottky Rectifier Cerpack (G) ▪▪ High surge rating ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Low junction capacitance ▪▪ Ultrasonic aluminum wire bonds ▪▪ Cerpack: 1.05 gr (typ) / SMD.5: 0.95 gr (typ) ▪▪ TX, TXV, and S level screening available - consult factory SMD.5 (S.5) MAXIMUM RATINGS1/ SSR10150 SSR10200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C, legs 2 & 3 tied together Peak Surge Current 8.3 msec pulse, half sine wave, 1 pulse, TA=25°C Operating & Storage Temperature Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 10 Amps IFSM 100 Amps TOP & TSTG -65 to +200 °C RθJC 3.0 °C/W SYMBOL -55°C 25°C 100°C 125°C 150°C UNIT Instantaneous Forward Voltage Drop IF=1 Amps, 300 µsec pulse typical maximum VF 680 - 620 650 515 - 475 530 435 - mVolts Instantaneous Forward Voltage Drop IF=5 Amps, 300 µsec pulse typical maximum VF 925 - 750 800 650 - 610 660 570 - mVolts Instantaneous Forward Voltage Drop IF=10 Amps, 300 µsec pulse typical maximum VF 990 - 780 840 715 - 675 770 640 - mVolts Reverse Leakage Current Rated VR, 300 µsec pulse minimum typical maximum IR 0.0001 - 0.0005 0.005 0.2 - 0.85 5 2.5 - mA Junction Capacitance VR =10 VDC, TA=25°C, f=1 MHz typical maximum CJ - 135 250 - - - pF Case Outline: Cerpack (G) Pin Out: Tab: Cathode Pin 1: Anode Pin 2: Anode Note: For optimal performance, .340 .300 connect anode terminals together 1 2x .060 (.040) 2 2x .100 Case Outline: SMD.5 (S.5) Pin Out: Pin 1: Cathode Pin 2: Anode 1 Pin 3: Anode 2 Note: For optimal performance, connect anode terminals together .030 MIN .408 .392 .304 .288 .304 .288 .135 .115 2 .105±.010 .020 .030 MIN 1 (.050) .315 .370 .140 .210 3x .020 .010 3 .010 ±.002 2x .010 MAX .233 .217 2x .103 .087 .128 .112 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 12 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents SSR10150J thru SSR10200J 150 - 200 Volts, 10 Amps Surface Mount Schottky Rectifier TO-257 (J) ▪▪ High surge rating ▪▪ Low reverse leakage current ▪▪ Isolated hermetically sealed package ▪▪ Ultrasonic aluminum wire bonds ▪▪ Low junction capacitance ▪▪ TX, TXV, and S level screening available - consult factory MAXIMUM RATINGS1/ SSR10150J SSR10200J Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C, legs 2 & 3 tied together Peak Surge Current 8.3 msec pulse, half sine wave, TA=25°C Operating & Storage Temperature Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 10 Amps IFSM 100 Amps TOP & TSTG -65 to +200 °C RθJC 4.0 °C/W SYMBOL -55°C 25°C 100°C 125°C 150°C UNIT Instantaneous Forward Voltage Drop IF=1 Amps, 300 µsec pulse typical maximum VF 690 - 625 650 520 - 475 530 435 - mVolts Instantaneous Forward Voltage Drop IF=5 Amps, 300 µsec pulse typical maximum VF 950 - 780 820 680 - 640 710 600 - mVolts Instantaneous Forward Voltage Drop IF=10 Amps, 300 µsec pulse typical maximum VF 1060 - 845 900 780 - 750 830 710 - mVolts Reverse Leakage Current Rated VR, 300 µsec pulse minimum typical maximum IR 0.0001 - 0.0005 0.005 0.2 - 0.85 5 2.5 - mA Junction Capacitance VR =10 VDC, TA=25°C, f=1 MHz typical maximum CJ - 135 250 - - - pF Case Outline: TO-257 (J) Ø .150 .140 3x Ø.035 .025 .660 .645 .430 .410 .210 .190 1.100 .500 .045 .035 PIN 3 PIN 2 .420 .410 .105 .095 .125 .110 SUFFIX: J .200 MIN 2x .180 .150 PIN 1 Case Outline: TO-257 (J) .537 .527 SUFFIX: JDB .200 MIN SUFFIX: JUB .180 .150 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 13 SSR20150CTG / S.5 thru SSR20200CTG / S.5 150 - 200 Volts, 20 Amps Hermetic Surface Mount Centertap Schottky Rectifier Cerpack (G) ▪▪ Extremely small footprint ▪▪ Extremely low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ 175°C operating junction temperature ▪▪ TX, TXV, and S level screening available - consult factory SMD.5 (S.5) MAXIMUM RATINGS1/ SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 10 Amps IFSM 100 Amps TOP & TSTG -65 to +175 °C RθJC 2 °C/W SSR20150CT SSR20200CT Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TA=25°C, per leg Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C, per leg Operating & Storage Temperature Cerpack SMD.5 Thermal Resistance Junction to case, per leg ELECTRICAL CHARACTERISTICS (PER LEG) SYMBOL MIN TYP MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF=1A IF=3A IF=5A IF=10A VF1 VF2 VF3 VF4 - 0.64 0.75 0.81 0.91 0.70 0.90 1.00 Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF=1A IF=3A IF=5A IF=10A VF5 VF6 VF7 VF8 - 0.68 0.84 0.91 1.05 0.75 1.00 1.15 Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF=1A IF=3A IF=5A IF=10A VF9 VF10 VF11 VF12 - 0.48 0.59 0.65 0.76 0.55 0.75 0.86 Volts Reverse Leakage Current Rated VR, TA=25°C, 300 µsec pulse minimum IR1 - 0.4 10 µA Reverse Leakage Current Rated VR, TA=100°C, 300 µsec pulse minimum IR2 - 0.5 - mA Reverse Leakage Current Rated VR, TA=125°C, 300 µsec pulse minimum IR3 - 0.8 5 mA CJ - 185 135 175 pF VR =5V VR =10V Junction Capacitance TA=25°C, f=1 MHz Case Outline: Cerpack (G) Pin Out: Pin 1: Anode 1 Pin 2: Anode 2 Tab: Cathode .340 .300 Note: For optimal performance, connect anode terminals together 1 2 1 2x .060 (.040) 2 2x .100 .105±.010 Tab .020 Case Outline: SMD.5 (S.5) Pin Out: Pin 1: Cathode Pin 2: Anode 1 Pin 3: Anode 2 Note: For optimal performance, connect anode terminals together .140 .210 .304 .288 .030 MIN .304 .288 .135 .115 2 .030 MIN 1 (.050) .315 .370 .408 .392 3x .020 .010 3 .010 ±.002 2x .010 MAX .233 .217 2x .103 .087 .128 .112 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 14 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents SED40KB200 & SSR40G200 Series 150 - 200 Volts, 40 Amps Power Schottky Diode Cerpack (G) ▪▪ Low forward voltage drop: 0.95V max @ 40A, 25°C ▪▪ Low reverse leakage ▪▪ Hermetically sealed surface mount package ▪▪ Guard ring for overvoltage protection ▪▪ Eutectic die attach ▪▪ TX, TXV, and S level screening available - consult factory Sedpack 2 (KE / KF) MAXIMUM RATINGS1/ SED40__150, SSR40G150 SED40__200, SSR40G200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TC=100°C Peak Surge Current 8.3 msec pulse, half sine wave, TC=25°C Operating & Storage Temperature KE, KB, G KF Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS Sedpack 2 (KB) SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 40 Amps IFSM 500 Amps TOP & TSTG -55 to +150 °C RθJC 1.5 3.5 °C/W SYMBOL -55°C 25°C 100°C 125°C 150°C UNIT Instantaneous Forward Voltage Drop IF=5 Amps, 300 µsec pulse typical maximum VF 750 - 670 750 560 - 520 600 480 - mVolts Instantaneous Forward Voltage Drop IF=15 Amps, 300 µsec pulse typical maximum VF 970 - 765 840 655 - 615 700 580 - mVolts Instantaneous Forward Voltage Drop IF=30 Amps, 300 µsec pulse typical maximum VF 1280 - 830 900 725 - 690 750 655 - mVolts Instantaneous Forward Voltage Drop IF=40 Amps, 300 µsec pulse typical maximum VF 1470 - 865 950 760 - 725 810 695 - mVolts Reverse Leakage Current Rated VR, 300 µsec pulse minimum typical maximum IR 0.0001 - 0.0002 0.01 0.1 - 0.6 10 2.5 - mA Junction Capacitance VR =10 VDC, TA=25°C, f=1 MHz typical maximum CJ - 400 500 - - - pF Case Outline: Sedpack 2 KB Case Outline: Cerpack (G) Case Outline: Sedpack 2 KE .315±.010 .315±.010 1 2x .060 (.040) .340 .300 .125±.020 .315 ±.010 .315 ±.010 .150 2 ANODE 2x .100 .275±.005 SQ. .105±.010 .020 (.050) .315 .370 .140 .210 R.025 TYP .095 MAX .110 MAX .0075 .0050 .065 ±.010 .275±.005 SQ. CATHODE Case Outline: Sedpack 2 KF .010 ±.002 .315±.010 .125±.020 ANODE .315 ±.010 .150 ANODE .065±.010 .095 MAX CATHODE .0075 .0050 .275±.005 SQ. CATHODE R.025 TYP 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 15 SSR40150J & SSR40200J 150 - 200 Volts, 40 Amps Schottky Rectifier TO-257 (J) ▪▪ Low forward voltage drop: 1.2V max @ 40A, 25°C ▪▪ High surge rating ▪▪ Low reverse leakage current ▪▪ Low junction capacitance ▪▪ Isolated hermetically sealed package ▪▪ Ultrasonic aluminum wire bonds ▪▪ Custom lead forming available ▪▪ TX, TXV, and S level screening available - consult factory MAXIMUM RATINGS1/ SED40150J SED40200J Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TC=25°C, legs 2 & 3 tied together Peak Surge Current 8.3 msec pulse, half sine wave, TC=25°C Operating & Storage Temperature Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 40 Amps IFSM 250 Amps TOP & TSTG -65 to +200 °C RθJC 2.0 °C/W SYMBOL -55°C 25°C 100°C 125°C 150°C UNIT Instantaneous Forward Voltage Drop IF=5 Amps, 300 µsec pulse typical maximum VF 770 - 700 800 580 - 540 650 500 - mVolts Instantaneous Forward Voltage Drop IF=15 Amps, 300 µsec pulse typical maximum VF 1000 - 840 930 740 - 710 800 680 - mVolts Instantaneous Forward Voltage Drop IF=25 Amps, 300 µsec pulse typical maximum VF 1300 - 950 1050 870 - 850 950 820 - mVolts Instantaneous Forward Voltage Drop IF=40 Amps, 300 µsec pulse typical maximum VF 1600 - 1075 1200 1040 - 1000 1100 980 - mVolts Reverse Leakage Current Rated VR, 300 µsec pulse minimum typical maximum IR 0.0001 - 0.002 0.01 0.6 - 3 10 10 - mA Junction Capacitance VR =10 VDC, TA=25°C, f=1 MHz typical maximum CJ - 400 500 - - - pF 3x Ø.035 .025 Case Outline: TO-257 (J) Ø .150 .140 .660 .645 .430 .410 .210 .190 1.100 .500 .045 .035 PIN 3 PIN 2 .420 .410 .105 .095 .125 .110 SUFFIX: J .200 MIN 2x .180 .150 PIN 1 .537 .527 SUFFIX: JDB .200 MIN SUFFIX: JUB .180 .150 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 16 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents SSR80150CTM / Z thru SSR80200CTM / Z 150 - 200 Volts, 80 Amps Schottky Centertap Rectifier TO-254Z (Z) ▪▪ Low forward voltage drop: 1.05V max @ 40A, 25°C ▪▪ High surge rating ▪▪ Low reverse leakage current ▪▪ Low junction capacitance ▪▪ Isolated hermetically sealed package ▪▪ Ultrasonic aluminum wire bonds ▪▪ Ceramic seal for improved reliability available ▪▪ TX, TXV, and S level screening available - consult factory TO-254 (M) MAXIMUM RATINGS1/ SSR80150 SSR80200 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TC=100°C Peak Surge Current 8.3 msec pulse, half sine wave, TC=25°C, per leg Operating & Storage Temperature Junction to Case, each individual diode Junction to Case (both legs tied together) Thermal Resistance ELECTRICAL CHARACTERISTICS (PER LEG) SYMBOL VALUE UNIT VRWM VR 150 200 Volts IO 80 Amps IFSM 250 Amps TOP & TSTG -65 to +200 °C RθJC 2.0 1.4 °C/W SYMBOL -55°C 25°C 100°C 125°C 150°C UNIT Instantaneous Forward Voltage Drop IF=5 Amps, 300 µsec pulse typical maximum VF 765 - 690 790 575 - 540 650 490 - mVolts Instantaneous Forward Voltage Drop IF=15 Amps, 300 µsec pulse typical maximum VF 980 - 815 900 720 - 680 750 650 - mVolts Instantaneous Forward Voltage Drop IF=25 Amps, 300 µsec pulse typical maximum VF 1300 - 900 960 825 - 790 850 760 - mVolts Instantaneous Forward Voltage Drop IF=40 Amps, 300 µsec pulse typical maximum VF 1500 - 1000 1050 960 - 940 1000 920 - mVolts Reverse Leakage Current Rated VR, 300 µsec pulse minimum typical maximum IR 0.0001 - 0.001 0.01 0.5 - 2 10 10 - mA Junction Capacitance VR =10 VDC, TA=25°C, f=1 MHz typical maximum CJ - 400 500 - - - pF Case Outline: TO-254 Ø .150 .139 .800 .790 .545 .535 Case Outline: TO-254Z 2x Ø .150 .140 .750 .500 PIN 3 .545 .535 PIN 2 .545 .535 2x .140 .125 .155 .145 .305 .295 2x .275 .255 PIN 1 .155 .140 3x .045 .035 SUFFIX: M 2x .190 .150 .170 MIN .170 MIN 2x .190 .150 .285 .265 .260 .240 SUFFIX: MD .305 .295 PIN 2 PIN 1 .260 .240 .050 .040 2x .155 .145 PIN 3 1.090.820 .545 CL 1.050.790 .535 3x Ø.045 .035 .685 .665 .555 .500 SUFFIX: MU 2x .275 .255 .155 .135 .055 .035 1/ Unless otherwise specified, all electrical characteristics @ 25°C. Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 17 SED100LB / LE / LT150 thru SED100LB / LE / LT200 150 - 200 Volts, 100 Amps Schottky Rectifier ▪▪ Low forward voltage drop: 0.93V max @ 100A, 25°C ▪▪ Hermetically sealed power surface mount package ▪▪ Low reverse leakage current ▪▪ Guard ring for overvoltage protection ▪▪ Eutectic die attach ▪▪ TX, TXV, and S level screening available - consult factory Sedpack 3 (LE / LT) Sedpack 3 (LB) MAXIMUM RATINGS1/ SED100LE150 SED100LE200 Peak Repetitive Reverse Voltage DC Blocking Voltage SYMBOL VALUE UNIT VRRM VRWM VR 150 200 Volts IO 100 Amps IFSM 1000 Amps TOP & TSTG -55 to +150 °C RθJC 0.3 °C/W Average Rectified Forward Current Resistive load, 60 Hz, sine wave, TC=100°C Peak Surge Current 8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium between pulses, TC=25°C Operating & Storage Temperature Thermal Resistance Junction to case ELECTRICAL CHARACTERISTICS SYMBOL TYPICAL MAX UNIT Instantaneous Forward Voltage Drop TA=25°C, 300 µsec pulse IF = 25A IF = 50A IF = 75A IF = 100A VF1 VF2 VF3 VF4 0.70 0.77 0.81 0.85 0.85 0.93 Volts Instantaneous Forward Voltage Drop TA=125°C, 300 µsec pulse IF = 25A IF = 50A IF = 75A IF = 100A VF5 VF6 VF7 VF8 0.55 0.62 0.67 0.71 0.70 0.79 Volts Instantaneous Forward Voltage Drop TA=150°C, 300 µsec pulse IF = 25A IF = 50A IF = 75A IF = 100A VF9 VF10 VF11 VF12 0.50 0.58 0.64 0.68 - Volts Instantaneous Forward Voltage Drop TA=-55°C, 300 µsec pulse IF = 25A IF = 50A IF = 75A IF = 100A VF13 VF14 VF15 VF16 0.78 0.95 1.10 1.26 - Volts Reverse Leakage Current Rated VR, 300 µsec pulse minimum TA=25°C TA=100°C TA=125°C TA=150°C IR1 IR2 IR3 IR4 3 1.5 6.5 30 50 20 - µA mA mA mA VR =5 V VR =10 V CJ1 CJ2 2250 1550 2000 pF Junction Capacitance TA=25°C, f=1 MHz Case Outline: Sedpack 3 (LB) Case Outline: Sedpack 3 (LE) .410±.010 .410 ±.010 .095 MAX .020±.002 .410±.010 .410 ±.010 CL CL ANODE CATHODE .370±.005 SQ. .095 MAX .020±.002 CATHODE Case Outline: Sedpack 3 (LT) .125±.020 CL .150 ±.005 CL .370±.005 SQ. .410±.010 .410 ±.010 ANODE .012 .005 .065±.010 .115 MAX .020±.002 CATHODE .125±.020 CL .150 ±.005 CL .315±.005 SQ. .370±.005 SQ. ANODE .012 .005 .065±.010 1/ Unless otherwise specified, all electrical characteristics @ 25°C. 18 200 Volt Hermetic Silicon Schottky Rectifiers Jump to Table of Contents High Reliability Screening Solid State Devices Screening Per MIL-PRF-19500 Guidelines* TX Level TXV Level Equivalent Equivalent S Level Equivalent Lot Acceptance Temperature Cycling Internal Visual1/ Internal Visual1/ Temperature Cycling Temperature Cycling Surge Surge Surge (as specified) (as specified) (as specified) Thermal Resp. Thermal Resp. Thermal Resp. (as specified) (as specified) (as specified) Acceleration (some excluded) PIND Serialize Interim Electrical (case mount only) Interim Electrical (case mount only) HTRB HTRB Interim Electrical Read & Record HTRB 48 hrs. 48 hrs. 48 hrs. Interim Electrical & Delta Interim Electrical & Delta Interim Electrical & Delta Burn-in Burn-in Burn-in Tran. & FET 160 hrs. Diode & SCR HTRB 96 hrs. Tran. & FET 160 hrs. Diode & SCR HTRB 96 hrs. Interim Electrical & Delta Interim Electrical & Delta Interim Electrical & Delta Hermeticity Hermeticity Hermeticity Case Isolation X-Ray (N/A case mount) Case Isolation (case isolated packages only) 240 hrs. (N/A case mount) (case isolated packages only) Note: 1/ X-ray in lieu of internal visual for COTS origin parts External Visual Case Isolation (case isolated packages only) *Specific Product Types May Have Alternate Screening Flows Contact your local SSDI Representative or contact the factory directly at (562) 404-4474. Email: [email protected] Jump to Table of Contents 200 Volt Hermetic Silicon Schottky Rectifiers 19 Sales Representatives W. Howard Associates, Inc. CO, UT 12353 E. Easter Ave. Suite 200 Centennial, CO 80112 Phone: 303-766-5755 [email protected] China Rironic Electronic Technology Co., Ltd Room 1206 China Development Bank Bldg No 2 First Gaoxin Rd, Xi’an City Shaanxi Province, P.R. China +86-029-68683866 [email protected] www.rironic.com USA Office: 1456 Newport Center Dr. Deerfield Beach, FL 33442 954-420-5000 Israel FMS Aerospace Ltd. 12 Kehilat Venezia Street Tel-Aviv 69400, Israel 972-3-6094977 [email protected] 605 91 Sa Fre nta A ew na ay 5 55 MACARTHUR BLVD. Directions from Los Angeles International Airport (LAX): Italy Milano Brothers Viale Enrico Fermi 79 00146 Roma, Italy +39 3384969298 [email protected] India Irys Electronics Siddarth Iyer 261/2 Plot 4 & 5, Silver Oak Park Baner Rd, Baner Pune 411045, India 91 20 2729 1836 710 BL VD 405 Brazil Techso Rua Fradique Coutinho, 316 - Cj 41 Sao Paulo - SP, 05416-000 Brazil (55-11) 3120 5968 [email protected] Germany MES Manz Electronic Systeme OHG Hauptstrasse 46/1 D-74369 Löchgau, Germany +49-7143-4031-0 110 Ontario Airport 57 ST ON E 105 1 60 RE John Wayne Airport International France / Netherlands / Belgium AR France 7 Rue du fosse blanc - Bat. D1 92230 Gennevilliers, France +33 (0)1 47 91 75 30 FI Long Beach Airport Giesting & Associates OH, Western PA, IN, MI 2854 Blue Rock Rd. Cincinnati, OH 45239 Phone: 513-385-1105 [email protected] Denmark / Finland / Norway / Sweden Expando Electronics AB Mörby Centrum, Plan 7 S-182 31 Danderyd, Sweden +468 54490044 5 Los Angeles International Airport HAVEN AVE. ETSI, LLC. DC, VA, MD 3 Church Circle, Suite 120 Annapolis, MD 21401 Phone: 410-974-9351 Fax: 410-974-8247 10 EXIT 118 VALLEY VIEW AVE. Scientific Devices - Phila, Inc. East PA, South NJ, DE 1635 Clemens Rd. Harleysville, PA19438 Phone: 215-256-8641 FAX: 215-256-8642 [email protected] San Diego Freeway CentraMark Technical Sales Associates TX, OK, AR, LA P.O. Box 450877 Garland, TX 75045-0877 Phone: 972-414-8188 Fax: 972-414-6788 SEPULVEDA BLVD. Domestic Map & Directions to Japan Sojitz Aerospace Marunouchi Trust Tower Main 4th Floor, 8-3 Marunouchi 1-chome, Chiyoda-Ku Tokyo, Japan 100-0005 +81-3-6870-7211 South Korea CBOL Corporation 19850 Plummer St. Chatsworth, CA 91311 818-721-5510 [email protected] Turkey IMCA Elektronik ve Bilisim Sanayi ve Ticaret A.S. Acibadem mah. Cecen sok. Akasya Acibadem AVM A Kule Blok no: 25 A/197 34660 Uskudar Istanbul, Turkey +90 216 504 07 87 www.imca.com.tr [email protected] United Kingdom / Ireland Johnson Group Services (JGS) The Ryder Cloisters 36, Evelyn Road Dunstable, Bedfordshire LU5 4NG, United Kingdom +44 (0) 1582 603439 [email protected] ▪▪ Start by going East on World Way, then merge onto South Sepulveda Blvd. ▪▪ Drive 0.7 miles, (At Tunnel Exit) then take Imperial Highway West/I-105 East ramp (toward International Terminal). Merge onto I-105 Freeway toward Norwalk. ▪▪ Drive 16.9 miles, then take I-605 Freeway North. ▪▪ Drive 1.7 miles, then merge onto I-5 Freeway South toward Santa Ana. ▪▪ Drive 6 miles, then take Exit #118 - Valley View Ave. ▪▪ Turn right at signal onto Valley View Ave. ▪▪ (Ignore the fact that this exit road is named Firestone Blvd, This is not the correct Firestone Blvd) ▪▪ Go over bridge and turn right at the first signal- Firestone Blvd. ▪▪ Merge into left lane. (Right lane becomes an entry back onto freeway) ▪▪ Drive 0.7 miles to our facility at 14701 Firestone Blvd. Directions from John Wayne (Orange County) Airport (SNA): ▪▪ Begin by taking Airport Way Northeast toward MacArthur Blvd. ▪▪ Turn Left onto MacArthur Blvd. ▪▪ Drive 0.4 miles and merge onto I-405 Freeway North toward Long Beach. ▪▪ Take the first exit onto Route 55 Freeway North (exit 9A) toward Riverside. ▪▪ Drive 4.2 miles then exit at I-5 Freeway North (exit 10B) toward Los Angeles. ▪▪ Drive 15 miles then take the Valley View (Exit #118) exit. ▪▪ Turn right at the first signal (at off-ramp) onto Firestone Blvd. ▪▪ Drive 0.7 miles to our facility at 14701 Firestone Blvd. AS9100:2009 Rev. C & ISO 9001:2008 Registered 14701 Firestone Blvd. La Mirada, CA 90638 (562) 404 - 4474 | FAX (562) 404-1773 [email protected] | www.ssdi-power.com