1N7068: MIL-PRF-19500/768 pass up today’s limitations with improved technology Solid State Devices, Inc. ISO 9001:2008 & AS9100:2009 Rev. C www.ssdi-power.com | (562) 404-4474 NEW Com stud parativ e SSDI y show ’ s s 1 N outp 7 erfo 068 1N58 rms 11 SOLID STATE DEVICES, INC. COMPANY OVERVIEW Product Centers Heritage Founded in 1967 and privately held, SSDI has been committed to the high reliability aero- space market for over 45 years. Each member of the technical management team averages over 20 years of industry experience. Leader in High Reliability Semiconductors Power and high voltage discretes and assem- Hermetic COTS Solution Focused SSDI is dedicated to provide unique solutions for obsolescence, reliability, per- Power and HV Modules blies. SSDI is an ISO 9001:2008 and AS9100:2009 Rev. C facility. formance, and other custom high reliability applications. Custom Discretes, Modules & Assemblies SSDI leverages a unique offering of discrete components with over 45 years of power and high voltage module experience, providing value added, integrated solutions. Deliver Value Quality, reliability, delivery, performance, Sales by Sector 54% Defense 41% Space doubling current manufacturing and support capacity. 5% Hi Rel Industrial MIL-PRF-19500 / MIL-STD-883 / MIL-STD-750 / MIL-STD-202 / ESA / SCC-5000 / MIL-M-38510 Modules Components Outside Environmental Processing ▪ Corona AC & DC ▪ Hermeticity ▪ Temperature Cycling ▪ Hermeticity ▪ HIPOT AC & DC ▪ PIND Testing ▪ Thermal Shock ▪ Vibration ▪ Performance Test ▪ Reverse Energy ▪ Humidity ▪ Shock ▪ Static & Dynamic Transient Test ▪ High Temp Storage ▪ Power Cycling ▪ Current Surge Test ▪ Salt Spray / Atmosphere ▪ Acceleration ▪ RGA ▪ Burn-In ▪ HTRB ▪ Moisture Resistance ▪ Radiography ▪ Real Time X-Ray ▪ Real Time X-Ray ▪ Hot / Cold Temp Bath ▪ Radiation ▪ Insulation Resistance ▪ Barometric Pressure ▪ Parametric Testing Testing ▪ Power Burn-In ▪ SEM / WLAT ▪ Power Cycling ▪ RF Testing ▪ Thermal Response ▪ ESD SSDI ADVANTAGES State of the Art Products ▪ ASPDs (Application Specific ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Flexible supplier ▪ Standard or custom solutions ▪ Small quantities welcomed ▪ Samples available ▪ Broad hermetic packaging capacity ▪ Partner on the design, manufacturing, and testing ▪ Product availability for the life of the program ▪ Solutions for obsolescence and DMS ▪ On time delivery of high reliability products For additional information and data sheets: 14701 Firestone Blvd. La Mirada, CA 90638 | (562) 404-4474 FAX (562) 404-1773 | [email protected] | www.ssdi-power.com 2 1N7066 - 1N7068 | MIL-PRF-19500/768 SSDI Fabricated Rectifiers & Zeners Power Devices) TESTING / QUALIFICATION CAPABILITIES (Hermetic Cavity Devices) ▪ Axial Leaded & Surface Mount service. Growth and Strength Strong steady growth, capable of Microelectronics ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Rectifiers Battery Bypass Modules Bipolar Products Centertaps & Bridges Custom Products (per customer requirements) DC-DC Converters High Voltage Rectifiers & Assemblies IGBTs MOSFETs / JFETs Power Hybrids Power Modules Rectifiers Schottkys and Schottky Assemblies Silicon Carbide Schottky Rectifiers (SiC) Small Signal Transistors Thyristors / SCRs TVS and Zener Assemblies Voltage Regulators Zeners Obsolete & DMS Support Bipolar Transistors Darlingtons Linear Voltage Regulators PUTs Rectifiers Reverse Engineering RF Products SCRs TVS UJTs Zeners Notes: Minimum order may apply. Most products available in die form. TABLE OF CONTENTS 1N7068 | MIL-PRF-19500/768 ▪ ▪ ▪ ▪ ▪ DLA Approves MIL-PRF-19500/768............................................................. 4 1N7068 vs. 1N5811 ..................................................................................... 5 1N7068 vs. 1N5811 / Case Outlines ............................................................ 6 1N7068 Applications ................................................................................... 7 Sales Representatives ................................................................. back cover *TX, TXV, and S-level screening available for all devices. Screening based on MIL-PRF-19500. Screening flows available on request. 1N7066 - 1N7068 SERIES Features ▪ 10 Amps ▪ 100 - 200 Volts ▪ Hyper Fast Reverse Recovery: 30 nS max ▪ High Surge Current: 350 A max ▪ Hermetically Sealed ▪ Void Free Ceramic Frit Glass Construction ▪ High Temperature Category I Eutectic Metallurgical Bond ▪ Low Forward Voltage Drop: 0.95 V @ 10 A ▪ Low Thermal Resistance ▪ Solid Silver Leads ▪ Axial Lead Higher Current Replacement for: 1N5807, 1N5809, 1N5811 (similar physical size) ▪ Possible SMS Replacements for Stud Mount: 1N5812, 1N5814, 1N5816 ▪ TX, TXV, and S Level Screening Available The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for errors or omissions. Solid State Devices, Inc. reserves the right to make changes without further notice to any product herein. Solid State Devices, Inc. does not assume liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. ™ Solid State Devices, Inc. and are registered trademarks of Solid State Devices, Inc. Solid State Devices, Inc. is an Equal Opportunity/Affirmative Action Employer. Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact SSDI. SSDI components may be used in life-support devices or systems only with the express written approval of SSDI. Failure of such components can be reasonably expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intentionally implanted in a human body, or used to support and/or maintain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1N7066 - 1N7068 Series | MIL-PRF-19500/768 Version 2.1 (10/2013) - Entire contents copyright © 2013 Solid State Devices, Inc. All Rights Reserved. No part of this catalog may be reproduced, transmitted, rewritten, scanned, stored mechanically or electronically, translated into other languages, or adapted for any use without the express written permission of Solid State Devices, Inc. 1N7066 - 1N7068 | MIL-PRF-19500/768 3 DLA APPROVES MIL-PRF-19500/768 On July 10, 2012, DLA Land and Maritime approved the MIL-PRF-19500/768 performance specification sheet for SSDI’s 1N7066 - 1N7068 series. This document is available on the DLA Land and Maritime website at: http://www.landandmaritime.dla.mil/Downloads/MilSpec/Docs/MIL-PRF-19500/ prf19500ss768.pdf The 1N7068 series of silicon rectifiers features 10 amps of average rectified forward current, a voltage range of 100 - 200 volts, and a hyper fast reverse recovery of 30 nsec max. This series benefits from SSDI’s propri™, etary lifetime control process, which results in enhanced reverse recovery and leakage current ratings. These devices also offer a low forward voltage drop of .95 volts at 10 amps and a high surge current of 350 amps. Axial Leaded ward current (1N7068: 10A vs. 1N5811: 6A), higher peak surge current (1N7068: 350A vs. 1N5811: 125A), lower instantaneous forward voltage drop (1N7068: 0.900V @ 6A vs. 1N5811: 0.925V @ 6A), and lower thermal resistance (1N7068: 8°C/W (L=.125"), 1N7068US: 4.5°C/W vs. 1N5811: 22°C/W (L=.375"), 1N5811US: 6.5°C/W). For a more detailed comparison, see pages 5 - 6. Today’s system designers continually face the challenge of upgrading or creating new systems that are smaller, lighter and higher power at a lower cost. SSDI developed the 1N7066 - 1N7068 family of devices as a high current replacement for the 1N5811 device. The 1N7068US device is a drop in replacement for the 1N5811US device and will not require redesign or board modification in most cases. The 1N7068 series is manufactured with a void free ceramic frit glass construction technique, which results in an unsurpassed ability to withstand severe thermal shock. These devices have been subjected to thermal shock from -210°C to +175°C over 50 cycles without impact to performance. The key advantages of the 1N7068 over the 1N5811 include higher average rectified for- Surface Mount Square Tab (US) Glass to metal sealed packages such as the TO-257, TO-254, and DO-4 are also candidates for replacement by the 1N7068 series. Glass to metal sealed packages are well documented for hermeticity and PIND issues after thermal shock. These issues are eliminated with the void free ceramic frit glass construction of the 1N7068. Through hole mounting and hand wiring are also eliminated when TO-257, TO-254, and DO-4 packages are replaced with the 1N7068US surface mount devices that can utilize solder reflow assembly with ceramic DBC for heat management. For more information or to request samples, contact SSDI at (562) 404-4474 or visit www.ssdi-power.com. Unless otherwise specified, TA = +25°C Maximum Ratings / Electrical Characteristics Symbol Value Unit VRRM VRWM VR 100 150 200 V IO 10 A Peak Surge Current (IFSM) @ +25°C, operating at IO , tP = 8.3 ms IFSM 350 A (pk) Reverse Recovery Time tRR 30 nS RӨJL RӨJEC 8 4.5 °C/W 1N7066 1N7067 1N7068 Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (IO) TL < +55°C, L = .125 in. (9.52 mm) or TEC < +100°C 1/2/ Thermal Resistance Junction to Lead for Axial, L=.125” Junction to End Case for Surface Mount Breakdown Voltage IR = 100µA 1N7066 1N7067 1N7068 BVR 110 165 220 V Instantaneous Forward Voltage Drop IFM = 6A, pulsed (section 4 of MIL-STD-750) IFM = 10A, pulsed (section 4 of MIL-STD-750) VF 0.900 0.950 V Reverse Leakage Current VR = VRWM, TA = +25°C, pulsed VR < 20 ms VR = VRWM, TA = +125°C, pulsed VR < 20 ms IR1 IR2 1.0 100 µA µA 1/ Axial lead, derate at 83.3 mA/°C above rated TL 2/ Surface mount, derate at 133.3 mA/°C above rated TEC 4 1N7066 - 1N7068 | MIL-PRF-19500/768 1N7068 VS. 1N5811 A comparative study of the 1N7068 series and the industry standard, 1N5811, revealed that the 1N7068 offers significant electrical improvements up to 180% in comparison to the 1N5811. 1N5811 1N7068 SSDI’s 1N7068US device is a drop in replacement for the 1N5811US ABSOLUTE MAXIMIUM RATINGS Parameter 1N5811 1N7068 Improvement Average Rectified Forward Current (IO) 6.0 A 10.0 A 67% Peak Surge Current (IFSM) 125 A 350 A 180% Peak Repetitive Reverse Voltage and DC Blocking Voltage (VRRM, VRWM, VR) 150 V 200 V 33% 525 µA 100 µA 80% RӨJL 22°C/W 8°C/W 64% RӨJEC 6.5°C/W 4.5°C/W 31% Reverse Leakage Current @ 125°C (IR) Thermal Resistance REVERSE LEAKAGE The 1N7068 device’s high temperature leakage display 98% less leakage current on average than the 1N5811. FORWARD VOLTAGE DROP The 1N7068 device’s forward voltage drop is 20 - 40 mV less on average than the 1N5811 when operated at the same current. TypicalHigh High Temperature Temperature IRI Typical R 10000 0.9 +150°C +125°C +100°C 10 1 0 50 100 VR (V) 150 0.4 200 The 1N7068 device displays faster recovery time on average than the 1N5811 at junction temperatures below 120˚C. 1N7068 1N5811 50 75 100 Temp (°C) 125 Dashed Line = 1N5811 Solid Line = 1N7068 150 0 5 10 IF (A) 15 20 CAPACITANCE The 1N7068 device is designed with a larger junction than the 1N5811 resulting in higher capacitance. Although the 1N7068 device is rated higher in capacitance than the 1N5811, it typically meets the 1N5811 capacitance specification at normal operating voltages. CJ (pF) Typical TypicalRecovery RecoveryTime Time 25 0.7 0.5 REVERSE RECOVERY TIME 90 80 70 60 50 40 30 20 10 0 0.8 0.6 Dashed Line = 1N5811 Solid Line = 1N7068 0.1 VF (V) IR (µA) 100 tRR @ 1-1-.1A (nS) -55°C +25°C +100°C +150°C 1.0 1000 0.01 TypicalVFVF Typical 1.1 180 160 140 120 100 80 60 40 20 0 Typical TypicalCapacitance Capacitance 1N7068 1N5811 0 5 10 VR (V) 15 20 1N7066 - 1N7068 | MIL-PRF-19500/768 5 1N7068 VS. 1N5811 / CASE OUTLINES OPERATION The adjacent chart displays the improved thermal management of the 1N7068 compared to the 1N5811 at typical operating conditions. On average, the 1N7068 operates 20˚C cooler resulting in improved efficiency and system reliability. 175 150 TJ (°C) Compared to the 1N5811, the typical performance of the 1N7068 provides: ▪ reduced power consumption of 3% to 8% on average per device, depending upon application ▪ lower junction temperatures of 6% to 30% on average depending upon application SurfaceMount Mount atat6A, 150V, 20Khz Surface 6A, 150V, 20Khz 200 125 100 75 1N7068 1N5811 50 25 0 25 50 75 TEC (°C) 100 125 150 CASE OUTLINES 1N5811 ØC 1N7066 - 1N7068 Series ØA D D B ØC D D B Axial Axial DIM MIN MAX DIM MIN MAX A .115” .142” A .135” .165” B .130” .300” B .135” .155” C .036” .042” C .036” .042” D .900” 1.30” D .900” 1.30” B C A A D C A A D B Surface Mount Surface Mount DIM MIN MAX DIM MIN MAX A .137” .148” A .172” .180” B .200” .225” B .180” .220” C .019” .028” C .020” .028” D .003” -- D .002” -- 1N7068 (Axial): 0.7 gm (typ) 1N5811 (Axial): 0.75 gm (typ) 1N5811 (Surface Mount): 0.54 gm (typ) 1N7068 (Surface Mount): 0.5 gm (typ) 6 1N7066 - 1N7068 | MIL-PRF-19500/768 ØA 1N7068 APPLICATIONS 1N7068 SERIES: POSSIBLE SOLUTIONS FOR SIMILAR PARTS TO-257AA DO-4 TO-254AA /478: 1N5816 6.0 gr (typ) /644: 1N6771, R 3.2 gr (typ) /594: 1N6666, R /616: 1N6659, R /642: 1N6765, R 6.3 gr (typ) TO-257AA (2 pins) /646: 1N6777 3 gr (typ) TO-59 Isolated Stud 1N6653 5.4 gr (typ) PRODUCT DEVELOPMENT: 1N7068 BRIDGE ASSEMBLIES Three Phase Bridge History For over 25 years, SSDI has been producing bridge assemblies with its high current diodes. The SDA113 series was the first bridge assembly developed by SSDI and originally featured 7.5 amps of output current and 1000 volts. Fifteen years ago, SSDI delivered higher power densities with the the SDA195 by changing the internal diodes to the SPD610 - SPD630 series. This bridge had an increased current to 30 amps with 100, 200, and 300 volt versions available. Internal Diode The internal diode selection is paramount to the end item module performance. Typically throughout the industry, the 1N5811 and SSDI’s SPD620 (6A, 200V, 40nS) diodes have been commonly selected as the building blocks in the construction of these bridge assemblies. Since the diode performance is the limiting factor to increasing the current rating of the bridge assemblies, higher power levels are achieved through the improvement of the internal diodes. Module Construction SSDI is currently developing bridge assemblies using the 1N7068 diode. The 1N7068 diode has a higher IO SDA195 and IFSM rating, which achieves lower thermal resistance compared to the 1N5811. Initial research and development indicates that SSDI’s SDA195 module would exhibit improved forward current, thermal resistance, forward voltage drop, and reverse leakage current with the replacement of the internal diodes with the same number of 1N7068 diodes. Bridge assemblies using the 1N7068 diodes can possibly improve the performance of current bridge assemblies on the market such as the three examples shown below. For more information about the current modules in development or to investigate how the high current 1N7068 diodes can improve your bridge assemblies, contact the factory at (562) 404-4474. 1N7068 Bridge Assemblies: Possible Solutions for Similar Bridge Assemblies /483: M19500/483-01 to -04 /469: M19500/469-01 to -05 /446: SPA25, SPB25, SPC25, SPD25 1N7066 - 1N7068 | MIL-PRF-19500/768 7 Sales Representatives SouthTech Marketing, LLC AL, FL, GA, MS, NC, Puerto Rico, SC 8213 Nantahala Dr. Raleigh, NC 27612 Phone: 919-781-0444 [email protected] Giesting & Associates OH, Western PA, IN, MI 2854 Blue Rock Rd. Cincinnati, OH 45239 Phone: 513-385-1105 [email protected] China Rironic Electronic Technology Co., Ltd Room 1206 China Development Bank Building No 2 First Gaoxin Road Xi’an City, Shaanxi Province P.R. China +86-029-68683866 [email protected] www.rironic.com Denmark / Finland / Norway / Sweden Expando Electronics AB Mörby Centrum, Plan 7 S-182 31 Danderyd, Sweden +468 54490044 France AR France 7 Rue du fosse blanc - Bat. D1 92230 Gennevilliers, France +33 (0)1 47 91 75 30 Germany Manz Electronic Systems Schauberstrasse 22 D-74354 Besigheim, Germany 49-7143-40310 India Irys Electronics Siddarth Iyer 261/2 Plot 4 & 5, Silver Oak Park Baner Rd Baner Pune 411045, India 91 20 2729 1836 RE E 105 1 110 710 605 Long Beach Airport Ontario Airport 57 ST ON BL VD 91 Sa Fre nta A ew na ay 5 55 MACARTHUR BLVD. 405 John Wayne Airport Directions from Los Angeles International Airport (LAX): International Brazil Techso Rua Fradique Coutinho 316 - Cj 41 Sao Paulo - SP 05416-000 Brazil (55-11) 3120 5968 [email protected] FI Los Angeles International Airport 60 HAVEN AVE. ETSI, LLC. DC, VA, MD 3 Church Circle, Suite 120 Annapolis, MD 21401 Phone: 410-974-9351 Fax: 410-974-8247 10 EXIT 118 5 VALLEY VIEW AVE. Scientific Devices - Phila, Inc. East PA, South NJ, DE 1635 Clemens Rd. Harleysville, PA19438 Phone: 215-256-8641 FAX: 215-256-8642 [email protected] San Diego Freeway CentraMark Technical Sales Associates TX, OK, AR, LA P.O. Box 450877 Garland, TX 75045-0877 Phone: 972-414-8188 Fax: 972-414-6788 SEPULVEDA BLVD. Domestic Map & Directions to Israel FMS Aerospace Ltd. 12 Kehilat Venezia Street Tel-Aviv 69400, Israel 972-3-6094977 [email protected] Italy Milano Brothers Viale Enrico Fermi 79 00146 Roma, Italy +39 3384969298 [email protected] USA Office: 1456 Newport Center Drive Deerfield Beach, FL 33442 954-420-5000 Japan Sojitz Aerospace Marunouchi Trust Tower Main 4th Floor, 8-3 Marunouchi 1-chome, Chiyoda-Ku Tokyo, Japan 100-0005 +81-3-6870-7211 South Korea CBOL Corporation 19850 Plummer St. Chatsworth, CA 91311 818-721-5510 [email protected] United Kingdom / Ireland Johnson Group Services (JGS) The Ryder Cloisters 36, Evelyn Road Dunstable, Bedfordshire LU5 4NG United Kingdom +44 (0) 1582 603439 [email protected] ▪ Start by going East on World Way, then merge onto South Sepulveda Blvd. ▪ Drive 0.7 miles, (At Tunnel Exit) then take Imperial Highway West/I-105 East ramp (toward International Terminal). Merge onto I-105 Freeway toward Norwalk. ▪ Drive 16.9 miles, then take I-605 Freeway North. ▪ Drive 1.7 miles, then merge onto I-5 Freeway South toward Santa Ana. ▪ Drive 6 miles, then take Exit #118 - Valley View Ave. ▪ Turn right at signal onto Valley View Ave. ▪ (Ignore the fact that this exit road is named Firestone Blvd, This is not the correct Firestone Blvd) ▪ Go over bridge and turn right at the first signal- Firestone Blvd. ▪ Merge into left lane. (Right lane becomes an entry back onto freeway) ▪ Drive 0.7 miles to our facility at 14701 Firestone Blvd. Directions from John Wayne (Orange County) Airport (SNA): ▪ Begin by taking Airport Way Northeast toward MacArthur Blvd. ▪ Turn Left onto MacArthur Blvd. ▪ Drive 0.4 miles and merge onto I-405 Freeway North toward Long Beach. ▪ Take the first exit onto Route 55 Freeway North (exit 9A) toward Riverside. ▪ Drive 4.2 miles then exit at I-5 Freeway North (exit 10B) toward Los Angeles. ▪ Drive 15 miles then take the Valley View (Exit #118) exit. ▪ Turn right at the first signal (at off-ramp) onto Firestone Blvd. ▪ Drive 0.7 miles to our facility at 14701 Firestone Blvd. AS9100:2009 Rev. C & ISO 9001:2008 Registered 14701 Firestone Blvd. La Mirada, CA 90638 (562) 404 - 4474 | FAX (562) 404-1773 [email protected] | www.ssdi-power.com