PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage. Low Saturation Voltage. 200oC Operating, Gold Eutectic Die Attach. Designed for Complementary Use with STX7905. TO-59 SYMBOL VALUE UNITS Collector-Emitter Voltage RBE = 1 kOhms VCEO VCER 450 600 Volts Collector-Base Voltage VCBO 600 Volts Emitter-Base Voltage VEBO 6 Volts Collector Current IC 1 Amps Base Current IB 0.5 Amps Total Device Dessipation @ TC = 25oC Derate above 25oC PD 20 133 Watts mW/ oC Operating and Storage Temperature TJ, TSTG -65 to +200 Thermal Resistance, Junction to Case R1JC 7.5 MAXIMUM RATINGS CASE OUTLINE: TO-59 Pin Out: 1 - Collector 2 - Base 3 - Emmiter NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0007A o C o C/W PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS SYMBOL MIN MAX UNITS Collector-Emitter Breakdown Voltage* ( IC = 1 mADC) (IC = 100:ADC; RBE = 1kS) BVCEO BVCER 450 600 - VDC Collector-Base Breakdown Voltage (IC = 100uADC) BVCBO 600 - V Emitter-Base Breakdown Voltage (IE = 20uADC) BVEBO 8 - V Collector Cutoff Current (VCB = 600VDC) ICBO - 1 :A Emmiter Cutoff Current (VEB = 6VDC) IEBO - 1 :A HFE 40 40 30 200 200 - Collector-Emitter Saturation Voltage* (IC = 25mADC, IB = 2.5mADC) VCE(SAT) - 0.5 VDC Base-Emitter Saturation Voltage* (IC = 25mADC, IB = 2.5mADC) VBE(SAT) - 1.0 VDC Current Gain Bandwidth Product (IC = 50mADC , VCE = 10VDC, f = 1MHz) fT 20 - MHz Output Capacitance (VCB= 30VDC , IE = 0ADC, f = 1.0MHz) Cob - 20 pf DC Current Gain* (IC = 1mADC; VCE = 10VDC) (IC = 25mADC; VCE = 10VDC) (IC = 100mADC; VCE = 15VDC) *Pulse Test: Pulse Width = 300us, Duty Cycle = 2%