PRELIMINARY SPMQ496-01 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: High Current Switching for Motor Drives and Inverters for Space Applications. Push-Pull Configuration with Freewheeling Diodes. Low Saturation Voltage at High Currents. Low Mechanical Stress Design. Hermetic Sealed Construction for Aerospace Applications. Excellent Thermal Management. Full Power Screened Hermetic Discretes. TX, TXV, and S-Level Screening Available. Consult Factory for: Faster Switching Speeds; Other Bridge Configurations and Terminal Styles. 400 AMP/600 VOLTS IGBT POWER MODULE FOR SPACE APPLICATIONS ASPM MAXIMUM RATINGS CHARACTERISTIC Collector to Emiter Voltage Gate to Collector Voltage Continuous Collector Current TB = 25 C TB = 90oC o Pulse Collector Current 1/ Clamped Inductive Load Current (TB = 125 EC, VCC = 480V, VGE = 15V, L = 30uH, RG = 10S Reverse Voltage Avalange Energy 1/ (IC = 200A) Operating and Storage Temperature Thermal Resistance, Junction to Base Total Module Dissipation @TB = 25oC Dissipation Derating from TB = 25oC to TB = 150oC 1/ SYMBOL VALUE UNIT VCES 600 Volts VGES "20 Volts I C1 I C2 I CM 400 200 600 Amps I LM 200 Amps EARV 5.6 mJ TOP & TSTG -55 TO +150 1 JB PD1 PD2 0.14 1250 10 Pulse Duration Limited by TJMAX; Repetative Rating ELECTRICAL SCHEMATIC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0010A Amps o C C/W W W/oC o PRELIMINARY SPMQ496-01 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) Collector-Emitter Saturation Voltage (IC = 200A, VGE = 15V) Gate-Emitter Leakage Current (VGE = "20V, VCE = 0V) Collector Leakage Current (VCE = 480V, VGE = 0V) Anti-Parallel Diode Forward Voltage (IF = 200A, TB = 25oC) (TB = 25oC) (TB = 90oC) (TB = 25oC) (TB = 125oC) Insulation Resistance (All terminals to Base @1500V) PACKAGE OUTLINE: ASPM Tolerances (Unless specified): .XX ".03 .XXX ".010 SYMBOL MIN MAX UNIT BVCES 600 - Volts VGE(th) 2.0 6 Volts VCE(sat)2 VCE(sat)1 - 3.1 2.5 Volts IGES - 2.0 :Amps ICES1 ICES1 - 225 20 :Amps mAmps VF - 1.6 Volts RINSUL1 1 - GS