1N8021 - 1N8023 SERIES - Solid State Devices, Inc.

REVERSE RECOVERY IN 5
nsec FLAT
1N8021 - 1N8023 SERIES
1 Amp ▪ 100 - 200 Volts ▪ 5 nsec ▪ Hyper Fast Recovery Rectifier
Solid State Devices, Inc. (SSDI) announces the fastest,
most rugged rectifier diodes on the market, the 1N8021
- 1N8023 Series. These diodes are more reliable than the
1N6642 while matching its reverse recovery. They are also
a smaller and faster replacement for the 1N5806. The
1N8021 - 1N8023 series is the perfect combination of high
performance and high reliability in a small, lightweight
package.
Features:
▪▪ Low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Avalanche breakdown
▪▪ Hermetically sealed
▪▪ Solid silver leads
▪▪ For high efficiency applications
▪▪ Void free glass ceramic chip construction
▪▪ Excellent liquid-to-liquid thermal shock
performance
Solid State Devices, Inc.
ISO 9001:2008 and AS9100:2004 Rev. B
(562) 404-4474 ▪ www.ssdi-power.com
▪▪ Available in axial & square tab versions
▪▪ TX, TXV, and S-level screening available.
▪▪ Replacement for 1N6638, 1N6642 and
1N5806
▪▪ Previous part numbers: SHF1101,
SHF1151, and SHF1201
▪▪ High temperature metallurgical class I
bond
Contact us today for more information about this
product or any of SSDI’s broad range of high reliability
products and services.
1N8021 thru 1N8023
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
100 – 200 VOLTS
5 nsec
HYPER FAST
RECOVERY RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information 1/
1N802 __ __ __
│ │ └ Screening 2/
│ │
__ = Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│ └ Package Type
__ = Axial Leaded
│
SMS = Surface Mount Square Tab
│
│
└ Device Type ( VRWM )
1 = 100 V
2 = 150 V
3 = 200 V
FEATURES:










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
Hyper fast reverse recovery time: 5 ns Max
Low forward voltage drop
Low reverse leakage current
Avalanche breakdown
Void free glass ceramic chip construction
Hermetically sealed
Solid silver leads
Excellent liquid-to-liquid thermal shock performance
Available in axial & square tab versions
For high efficiency applications
TX, TXV, and S-Level screening available2/
Replacement for 1N6638, 1N6642 and 1N5806
Previous part numbers: SHF1101, SHF1151, and SHF1201
High temperature metallurgical class I bond
MAXIMUM RATINGS 3/
RATING
Peak Repetitive Reverse Voltage
DC Blocking Voltage
1N8021
1N8022
1N8023
Average Rectified Forward Current
(Resistive load, 60 Hz, sine wave, TC = 25°C)
SYMBOL
VALUE
UNIT
VRWM
VR
100
150
200
Volts
IO
1
Amp
IFSM
20
Amps
TOP and TSTG
-65 to +175
°C
RθJE
RθJL
20
80
°C/W
Peak Surge Current
(8.3 msec pulse, half sine wave superimposed on Io, allow junction to
reach equilibrium between pulses, TC = 25°C)
Operating & Storage Temperature
Thermal Resistance
SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
Axial Leaded
NOTES:
SMS
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on
request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0160B
DOC
1N8021 thru 1N8023
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
3/
CHARACTERISTICS
SYMBOL
LIMIT
UNIT
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C)
@ IF = 1mA
@ IF = 10mA
@ IF = 100mA
@ IF = 200mA
@ IF = 500mA
@ IF = 1A
VF1
VF2
VF3
VF4
VF5
VF6
0.525
0.650
0.800
0.850
0.910
0.980
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 150°C)
@ IF = 10mA
@ IF = 100mA
VF7
VF8
0.500
0.620
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = -55°C)
@ IF = 10mA
@ IF = 100mA
VF9
VF10
0.810
0.900
Vdc
1N8021
1N8022
1N8023
BVR
100
150
200
Vdc
Minimum Breakdown Voltage
IR = 100 μA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR1
IR2
IR3
80
120
750
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 125°C)
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR4
IR5
IR6
50
75
150
µA
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
CJ1
6
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
CJ2
5
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 10V
CJ3
4
pf
Maximum Reverse Recovery Time
(IF = 50 mA, IR = 100 mA, IRR = 25 mA)
trr
5
nsec
Maximum Forward Recovery Time
(IF = 50 mA)
tfr
20
nsec
SMS
AXIAL
DIM
A
B
C
D
MIN
.056”
.125”
.018”
1.00”
MAX
.075”
.140”
.022”
1.50”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DIM
A
B
C
D
DATA SHEET #: RC0160B
MIN
.070”
.168”
.019”
.001”
MAX
.085”
.200”
.028”
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DOC