RK3055E Transistors 10V Drive Nch MOS FET RK3055E zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. 2.3 (2) (3) 2.3 0.5 1.0 Abbreviated symbol : 3055E (3)Source zApplications Switching zPackaging specifications Package Type zInner circuit Taping TL Code Basic ordering unit (pieces) 2500 RK3055E (1) Gate (2) Drain (3) Source (1) (2) (3) zAbsolute maximum ratings (Ta=25°C) Symbol Parameter Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Drain current Continuous Pulsed Reverse drain current ID 8 A IDP∗ 20 A Continuous IDR 8 A Pulsed IDRP∗ 20 A Total power dissipation (Tc=25°C) PD 20 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗ Pw≤10µs, Duty cycle≤1% Rev.A 1/4 RK3055E Transistors zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±20V, VDS=0V V(BR)DSS 60 − − V ID=1mA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Test Conditions IDSS − − 10 µA VDS=60V, VGS=0V Gate threshold voltage VGS(th) 1.0 − 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) Zero gate voltage drain current Yfs ∗ Forward transfer admittance − − 0.15 Ω ID=4A, VGS=10V 4.0 − − S ID=4A, VDS=15V Input capacitance Ciss − 520 − pF VDS=10V Output capacitance Coss − 240 − pF VG=0V Reverse transfer capacitance Crss − 100 − pF f=1MHz Turn-on delay time td(on) − 5.0 − ns ID=2.5A, VDD tr − 20 − ns VGS=10V td(off) − 50 − ns RL=12Ω tf − 20 − ns RG=10Ω Rise time Turn-off delay time Fall time ∗ 30V Pw ≤ 300µs, Duty cycle ≤ 1% zElectrical characteristics curve 10 100µs PW DC 2 1m s =1 0m s Op er at ion 1 0.5 0.2 Tc=25°C Single pulse 0.1 0.5 1 2 10V 8V 6V 5V 8 7 4V 6 5 4 3 2 5 10 20 50 0 0 100 VDS=10V 5 Pulsed Ta=125°C 75°C 2 25°C −25°C 1 0.5 0.2 0.1 0.05 VGS=3V 0.02 1 DRAIN-SOURCE VOLTAGE : VDS (V) 1 2 3 4 5 0.01 0 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Maximum Safe Operating Area 3.0 2.0 1.0 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.4 Gate Threshold Voltage Fig.9 vs. Channel Temperature 2 1 0.5 Ta=125°C 75°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 3 4 5 6 7 8 10 VGS=10V 5 Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=10V ID=1mA 2 Fig.3 Typical Transfer Characteristics 10 4.0 1 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical Output Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) GATE THRESHOLD VOLTAGE : VGS(th) (V) 10 Ta=25°C Pulsed 9 DRAIN CURRENT : ID (A) a re sa thi S(on) n 20 i D on y R ati b 10 per ited O lim is 5 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 50 0.5 1 2 5 10 DRAIN CURRENT : I D (A) Fig.5 Static Drain-Source On-State Resistance Fig.9 vs. Drain Current ( Ι ) VGS=4V 5 Pulsed 2 1 0.5 Ta=125°C 75°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10.0 DRAIN CURRENT : I D (A) Fig.6 Static Drain-Source On-State Resistance Fig.9 vs. Drain Current ( ΙΙ ) Rev.A 2/4 RK3055E 0.6 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.2 ID=5A 2.5A 0.1 0 5 10 15 0.5 0.4 0.3 0.2 ID=5A 0 −50 −25 20 Ta=125°C 75°C 25°C −25°C 1 0.5 0.2 0.1 0.05 0 0.5 1.0 1.5 tf tr 20 10 td(on) 5 2 0.05 0.1 0.2 0.5 1 2 5 DRAIN CURRENT : I D (A) Fig.13 Switching Characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) 10 Ta = −25°C 25°C 75°C 125°C 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 VGS=10V 0.5 0.1 0.05 5.0 10 Fig.9 Forward Transfer Admittance Fig.9 vs. Drain Current Ta=25°C f=1MHz VGS=0V Pulsed 5000 0V 2.0 DRAIN CURRENT : I D (A) 2000 1000 500 Ciss C os 200 s Crs 100 s 50 20 0.01 0 1.0 0.5 1.5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Reverse Drain Current Fig.14 vs. Source-Drain Voltage ( ΙΙ ) Fig.12 Typical Capacitance Fig.14 vs. Drain-Source Voltage 1000 td(off) 50 20 10000 1 REVERSE RECOVERY TIME : trr (ns) SWITCHING TIME : t (ns) 100 100 125 150 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed 200 75 Ta=25°C Pulsed Fig.10 Reverse Drain Current Fig.14 vs. Source-Drain Voltage ( Ι ) 500 50 5 SOURCE-DRAIN VOLTAGE : VSD (V) 1000 25 VDS=15V 50 Pulsed Fig.8 Static Drain-Source On-State Resistance Fig.9 vs. Channel Temperature REVERSE DRAIN CURRENT : IDR (A) REVERSE DRAIN CURRENT : IDR (A) VGS=0V Pulsed 2 0 100 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static Drain-Source On-State Resistance Fig.9 vs. Gate-Source Voltage 5 2.5A 0.1 GATE-SOURCE VOLTAGE : VGS (V) 10 VGS=10V Pulsed CAPACITANCE : C (pF) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.3 FORWARD TRANSFER ADMITTANCE : YfS (S) Transistors 10 di/dt=50A/µs VGS=0V 500 Ta=25°C Pulsed 100 50 10 0.1 0.2 0.5 1 2 5 10 REVERSE DRAIN CURRENT : IDR (A) Fig.14 Reverse Recovery Time Fig.14 vs. Reverse Drain Current Rev.A 3/4 RK3055E Transistors NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25°C θth (ch-c) (t)=r (t) θth (ch-c) θth (ch-c)=6.25°C/W 0.01 0.01 Single pulse 0.001 1µ PW T 100µ 1m 10m 100m D=PW T 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width zSwitching characteristics measurement circuit Pulse Width VGS RG ID D.U.T. VDS RL VGS 90% 50% 10% 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.16 Switching Time Test Circuit tr td (off) tf toff Fig.17 Switching Time Waveforms Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1