SavantIC Semiconductor Product Specification 2N6496 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High collector current rating ·High power dissipation capability ·Wide area of safe operation APPLICATIONS ·For switching and amplifier circuits in Industrial and commercial applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 5 A PD Total Power Dissipation 140 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2N6496 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=90V; IB=0 1.0 mA ICEV Collector cut-off current VCE=130V; VBE(off)=1.5V TC=150 2.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=8A ; VCE=2V COB Output capacitance IE=0;VCB=10V;f=1MHz 2 12 100 400 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6496